Power MOSFET

PTR1N60

PTD1N60

PTU1N60

PTR1N60PTD1N60PTU1N60

N-CHANNEL 600V - 8 Ω - 1A DPAK / IPAK / TO-92

TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK

APPLICATIONS SWITCH MODE LOW POWER SUPPLIES

(SMPS) LOW POWER, LOW COST CFL (COMPACT

FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS

ORDERING INFORMATION

TYPE VDSS RDS(on) ID Pw

600 V600 V600 V

< 8.5 Ω< 8.5 Ω< 8.5 Ω

1 A1 A

0.4 A

30 W30 W3 W

SALES TYPE MARKING PACKAGE PACKAGING

IPAK

32

1

TO-92TO-92 (Ammopack)

1

3

DPAK

INTERNAL SCHEMATIC DIAGRAM

1N60

1N60

1N60

DPAK

IPAK

TO-92

TAPE

TUBE

BULK

2012-6-25- 1 -

PTU1N60 / PTD1N60 / PTR1N60

PTR1N60PTD1N60PTU1N60

ABSOLUTE MAXIMUM RATINGS

() Pulse width limited by safe operating area(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

THERMAL DATA

AVALANCHE CHARACTERISTICS

Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS = 0) 600 V

VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V

VGS Gate- source Voltage ± 30 V

ID Drain Current (continuous) at TC = 25°C 1.0 0.4 A

ID Drain Current (continuous) at TC = 100°C 0.63 0.45 A

IDM () Drain Current (pulsed) 4 2.5 A

PTOT Total Dissipation at TC = 25°C 30 8 W

Derating Factor 0.24 0.025 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

TjTstg

Operating Junction TemperatureStorage Temperature -55 to 150 °C

DPAK / IPAK TO-92

Rthj-case Thermal Resistance Junction-case Max 4.16 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W

Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W

Tl Maximum Lead Temperature For SolderingPurpose

275 260 °C

Symbol Parameter Max Value Unit

DPAK / IPAK TO-92

IAR Avalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)

1 A

EAS Single Pulse Avalanche Energy(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

25 mJ

2012-6-25- 2 -

PTU1N60 / PTD1N60 / PTR1N60

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2. Pulse width limited by safe operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-sourceBreakdown Voltage

ID = 1 mA, VGS = 0 600 V

IDSS Zero Gate VoltageDrain Current (VGS = 0)

VDS = Max RatingVDS = Max Rating, TC = 125 °C

150

µAµA

IGSS Gate-body LeakageCurrent (VDS = 0)

VGS = ± 30V ±100 nA

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.25 3 3.7 V

RDS(on) Static Drain-source OnResistance

VGS = 10V, ID = 0.5 A 8 8.5 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max,ID = 0.5 A

1 S

CissCossCrss

Input CapacitanceOutput CapacitanceReverse TransferCapacitance

VDS = 25V, f = 1 MHz, VGS = 0 15623.53.8

pFpFpF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)tr

Turn-on Delay TimeRise Time

VDD = 300 V, ID = 0.5 ARG = 4.7Ω VGS = 10 V(Resistive Load see, Figure 3)

6.55

nsns

QgQgsQgd

Total Gate ChargeGate-Source ChargeGate-Drain Charge

VDD = 480V, ID = 1.0 A,VGS = 10V, RG = 4.7Ω

71.13.4

10 nCnCnC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off)tf

Turn-off Delay TimeFall Time

VDD = 300 V, ID = 0.5 ARG = 4.7Ω VGS = 10 V(Resistive Load see, Figure 3)

1925

nsns

tr(Voff)tftc

Off-voltage Rise TimeFall TimeCross-over Time

VDD = 480V, ID = 1.0 A,RG = 4.7Ω, VGS = 10V(Inductive Load see, Figure 5)

242544

nsnsns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISDISDM (2)

Source-drain CurrentSource-drain Current (pulsed)

14

AA

VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V

trrQrr

IRRM

Reverse Recovery TimeReverse Recovery ChargeReverse Recovery Current

ISD = 1.0 A, di/dt = 100A/µsVDD = 25V, Tj = 150°C(see test circuit, Figure 5)

2293773.3

nsµCA

2012-6-25- 3 -

PTU1N60 / PTD1N60 / PTR1N60

Thermal Impedance For TO-92

Thermal Impedance For DPAK/IPAKSafe Operating Area For DPAK/IPAK

Safe Operating Area For TO-92

Output Characteristics Transfer Characteristics

2012-6-25- 4 -

PTU1N60 / PTD1N60 / PTR1N60

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.

Static Drain-source On ResistanceTransconductance

Gate Charge vs Gate-source Voltage Capacitance Variations

2012-6-25- 5 -

PTU1N60 / PTD1N60 / PTR1N60

Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics

Max Id Current vs Tc Maximum Avalanche Energy vs Temperature

2012-6-25- 6 -

PTU1N60 / PTD1N60 / PTR1N60

Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit ForResistive Load

2012-6-25- 7 -

PTU1N60 / PTD1N60 / PTR1N60