Post on 17-Mar-2020
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
November 2013 DocID025538 Rev 1 1/13
STE145N65M5
N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh™ V Power MOSFET in a ISOTOP package
Datasheet - preliminary data
Figure 1. Internal schematic diagram
Features
• Very low RDS(on)
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• 100% avalanche tested
Applications• Switching applications
DescriptionThis device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
ISOTOP
Order code VDS @Tjmax RDS(on) max ID
STE145N65M5 710 V 0.015 Ω 143 A
Table 1. Device summary
Order code Marking Packages Packaging
STE145N65M5 145N65M5 ISOTOP Tube
www.st.com
Contents STE145N65M5
2/13 DocID025538 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID025538 Rev 1 3/13
STE145N65M5 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage ± 25 V
ID Drain current (continuous) at TC = 25 °C 143 A
ID Drain current (continuous) at TC = 100 °C 90 A
IDM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 572 A
PTOT Total dissipation at TC = 25 °C 679 W
IARMax current during repetitive or single pulse avalanche (pulse width limited by TJMAX)
17 A
EASSingle pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)2420 mJ
dv/dt(2)
2. ISD ≤ 143 A, di/dt = 400 A/µs, VDD = 400 V, VDS (peak) < V(BR)DSS.
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.184 °C/W
Rthj-amb Thermal resistance junction-ambient max 30 °C/W
Electrical characteristics STE145N65M5
4/13 DocID025538 Rev 1
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
ID = 1 mA, VGS = 0 650 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 650 V 10 µA
VDS = 650 V, TC=125 °C 100 µA
IGSSGate-body leakage
current (VDS = 0)VGS = ± 25 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)Static drain-source on- resistance
VGS = 10 V, ID = 69 A 0.012 0.015 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
- 18500 - pF
Coss Output capacitance - 413 - pF
CrssReverse transfer capacitance
- 11 - pF
Co(tr)(1)
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Equivalent capacitance time related
VGS = 0, VDS = 0 to 520 V - 1950 - pF
Co(er)(2)
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Equivalent capacitance energy related
VGS = 0, VDS = 0 to 520 V - 415 - pF
RGIntrinsic gate resistance
f = 1 MHz open drain - 0.7 - Ω
Qg Total gate charge VDD = 520 V, ID = 69 A,VGS = 10 V
(see Figure 15)
- 414 - nC
Qgs Gate-source charge - 114 - nC
Qgd Gate-drain charge - 164 - nC
DocID025538 Rev 1 5/13
STE145N65M5 Electrical characteristics
13
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(v) Voltage delay timeVDD = 400 V, ID = 85 A,
RG = 4.7 Ω, VGS = 10 V(see Figure 16)(see Figure 19)
- 255 - ns
tr(v) Voltage rise time - 11 - ns
tf(i) Current fall time - 82 - ns
tc(off) Crossing time - 88 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 143 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 572 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 143 A, VGS = 0 - 1.5 V
trr Reverse recovery timeISD = 143 A, di/dt = 100 A/µsVDD = 100 V (see Figure 16)
- 568 ns
Qrr Reverse recovery charge - 14.5 µC
IRRM Reverse recovery current - 51 A
trr Reverse recovery time ISD = 143 A, di/dt = 100 A/µsVDD = 100 V, Tj = 150 °C(see Figure 16)
- 728 ns
Qrr Reverse recovery charge - 24.5 µC
IRRM Reverse recovery current - 67 A
Electrical characteristics STE145N65M5
6/13 DocID025538 Rev 1
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized VDS vs temperature Figure 7. Static drain-source on-resistance
ID
100
10
1
0.10.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
100µs
1ms
10µs
Tj=150°CTc=25°CSingle pulse
10ms
AM17900v1
ID
150
100
50
00 10 VDS(V)
(A)
5 15
200
250
6V
VGS=10V
7V
20
8V
9V300
25
AM17901v1ID
200
100
00 2 VGS(V)4
(A)
1 3 5
50
150
250
VDS=30V
6 7 8
300
AM17902v1
VDS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
ID = 1mA1.08
AM10399v1
DocID025538 Rev 1 7/13
STE145N65M5 Electrical characteristics
13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on-resistance vs temperature
Figure 12. Output capacitance stored energy Figure 13. Switching losses vs gate resistance (1)
1. Eon including reverse recovery of a SiC diode.
VGS(th)
1.00
0.90
0.80
0.70-50 0 TJ(°C)
(norm)
-25
1.10
7525 50 100
ID= 250µA
AM08899v1 RDS(on)
1.7
1.3
0.9
0.5-50 0 TJ(°C)
(norm)
-25 7525 50 100
2.1
ID = 69AVGS= 10V
AM08900v1
Eoss
30
20
10
00 100 VDS(V)
(µJ)
400
40
200 300
50
60
500 600
70
AM12616v1E
00 20 RG(Ω)
(μJ)
10 30
1000
2000
40
ID=85 A
VDD=400 V Eon
Eoff
3000
VGS=10 V
4000
5000
6000
7000
8000
9000
AM15555v1
Test circuits STE145N65M5
8/13 DocID025538 Rev 1
3 Test circuits
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
DocID025538 Rev 1 9/13
STE145N65M5 Package mechanical data
13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Package mechanical data STE145N65M5
10/13 DocID025538 Rev 1
Table 8. ISOTOP mechanical data
Dim.mm
Min. Typ. Max.
A 11.80 12.20
A1 8.90 9.10
B 7.80 8.20
C 0.75 0.85
C2 1.95 2.05
D 37.80 38.20
D1 31.50 31.70
E 25.15 25.50
E1 23.85 24.15
E2 24.80
G 14.90 15.10
G1 12.60 12.80
G2 3.50 4.30
F 4.10 4.30
F1 4.60 5
φP 4 4.30
P1 4 4.40
S 30.10 30.30
DocID025538 Rev 1 11/13
STE145N65M5 Package mechanical data
13
Figure 20. ISOTOP drawing
0041565_Rev_I
Revision history STE145N65M5
12/13 DocID025538 Rev 1
5 Revision history
Table 9. Document revision history
Date Revision Changes
18-Nov-2013 1 Initial release.
DocID025538 Rev 1 13/13
STE145N65M5
13
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