INA12x Precision, Low-Power Instrumentation · PDF filepurpose instrumentation amplifiers...

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A 1 A 2 A 3 40kΩ 40kΩ 40kΩ 40kΩ V IN 2 1 8 3 6 5 V IN R G V+ V- Ref V O G=1+ 49.4kΩ R G - + 4 7 NOTE: (1) INA129: 24.7kΩ G=1+ 50kΩ R G INA128, INA129 Over-Voltage Protection Over-Voltage Protection 25k Ω (1) 25kΩ (1) INA128: INA129: Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. INA128, INA129 SBOS051D – OCTOBER 1995 – REVISED JANUARY 2018 INA12x Precision, Low-Power Instrumentation Amplifiers 1 1 Features 1Low Offset Voltage: 50 μV Maximum Low Drift: 0.5 μV/°C Maximum Low Input Bias Current: 5 nA Maximum High CMR: 120 dB minimum Inputs Protected to ±40 V Wide Supply Range: ±2.25 V to ±18 V Low Quiescent Current: 700 μA 8-Pin Plastic Dip, SO-8 2 Applications Bridge Amplifier Thermocouple Amplifier RTD Sensor Amplifier Medical Instrumentation Data Acquisition 3 Description The INA128 and INA129 are low-power, general purpose instrumentation amplifiers offering excellent accuracy. The versatile 3-op amp design and small size make these amplifiers ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200 kHz at G = 100). A single external resistor sets any gain from 1 to 10,000. The INA128 provides an industry-standard gain equation; the INA129 gain equation is compatible with the AD620. The INA12x is laser-trimmed for very low offset voltage (50 μV), drift (0.5 μV/°C) and high common- mode rejection (120 dB at G 100). The INA12x operates with power supplies as low as ±2.25 V, and quiescent current is only 700 μA, ideal for battery- operated systems. Internal input protection can withstand up to ±40 V without damage. The INA12x is available in 8-pin plastic DIP and SO-8 surface-mount packages, specified for the –40°C to +85°C temperature range. The INA128 is also available in a dual configuration, the INA2128. Device Information (1) PART NUMBER PACKAGE BODY SIZE (NOM) INA128 INA129 SOIC (8) 3.91 mm × 4.9 mm PDIP (8) 6.35 mm × 9.81 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic

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Transcript of INA12x Precision, Low-Power Instrumentation · PDF filepurpose instrumentation amplifiers...

  • A1

    A2

    A3

    40k40k

    40k40k

    VIN2

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    VIN

    RG

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    NOTE: (1) INA129: 24.7k

    G = 1 +50k

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    INA128, INA129Over-Voltage

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    INA128:

    INA129:

    Product

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    Technical

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    Support &Community

    ReferenceDesign

    An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

    INA128, INA129SBOS051D OCTOBER 1995REVISED JANUARY 2018

    INA12x Precision, Low-Power Instrumentation Amplifiers

    1

    1 Features1 Low Offset Voltage: 50 V Maximum Low Drift: 0.5 V/C Maximum Low Input Bias Current: 5 nA Maximum High CMR: 120 dB minimum Inputs Protected to 40 V Wide Supply Range: 2.25 V to 18 V Low Quiescent Current: 700 A 8-Pin Plastic Dip, SO-8

    2 Applications Bridge Amplifier Thermocouple Amplifier RTD Sensor Amplifier Medical Instrumentation Data Acquisition

    3 DescriptionThe INA128 and INA129 are low-power, generalpurpose instrumentation amplifiers offering excellentaccuracy. The versatile 3-op amp design and smallsize make these amplifiers ideal for a wide range ofapplications. Current-feedback input circuitry provideswide bandwidth even at high gain (200 kHz at G =100).

    A single external resistor sets any gain from 1 to10,000. The INA128 provides an industry-standardgain equation; the INA129 gain equation iscompatible with the AD620.

    The INA12x is laser-trimmed for very low offsetvoltage (50 V), drift (0.5 V/C) and high common-mode rejection (120 dB at G 100). The INA12xoperates with power supplies as low as 2.25 V, andquiescent current is only 700 A, ideal for battery-operated systems. Internal input protection canwithstand up to 40 V without damage.

    The INA12x is available in 8-pin plastic DIP and SO-8surface-mount packages, specified for the 40C to+85C temperature range. The INA128 is alsoavailable in a dual configuration, the INA2128.

    Device Information(1)PART NUMBER PACKAGE BODY SIZE (NOM)

    INA128INA129

    SOIC (8) 3.91 mm 4.9 mmPDIP (8) 6.35 mm 9.81 mm

    (1) For all available packages, see the orderable addendum atthe end of the data sheet.

    Simplified Schematic

    http://www.ti.com/product/ina128?qgpn=ina128http://www.ti.com/product/ina129?qgpn=ina129http://www.ti.com/tool/TIPD191?dcmp=dsproject&hqs=rd

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    INA128, INA129SBOS051D OCTOBER 1995REVISED JANUARY 2018 www.ti.com

    Product Folder Links: INA128 INA129

    Submit Documentation Feedback Copyright 19952018, Texas Instruments Incorporated

    Table of Contents1 Features .................................................................. 12 Applications ........................................................... 13 Description ............................................................. 14 Revision History..................................................... 25 Pin Configuration and Functions ......................... 36 Specifications......................................................... 3

    6.1 Absolute Maximum Ratings ...................................... 36.2 ESD Ratings.............................................................. 36.3 Recommended Operating Conditions....................... 46.4 Thermal Information .................................................. 46.5 Electrical Characteristics........................................... 46.6 Typical Characteristics .............................................. 7

    7 Detailed Description ............................................ 117.1 Overview ................................................................. 117.2 Functional Block Diagram ....................................... 117.3 Feature Description................................................. 117.4 Device Functional Modes........................................ 12

    8 Application and Implementation ........................ 138.1 Application Information............................................ 138.2 Typical Application ................................................. 13

    9 Power Supply Recommendations ...................... 179.1 Low Voltage Operation ........................................... 17

    10 Layout................................................................... 1910.1 Layout Guidelines ................................................. 1910.2 Layout Example .................................................... 19

    11 Device and Documentation Support ................. 2011.1 Related Links ........................................................ 2011.2 Receiving Notification of Documentation Updates 2011.3 Community Resources.......................................... 2011.4 Trademarks ........................................................... 2011.5 Electrostatic Discharge Caution............................ 2011.6 Glossary ................................................................ 20

    12 Mechanical, Packaging, and OrderableInformation ........................................................... 20

    4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

    Changes from Revision C (October 2015) to Revision D Page

    Added top navigator icon for TI Reference Design ............................................................................................................... 1 Changed "0.50/G" to "0.520/G" in MAX column of Offset voltage RTI vs temperature row of Electrical

    Characteristics ........................................................................................................................................................................ 4

    Changes from Revision B (February 2005) to Revision C Page

    Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementationsection, Power Supply Recommendations section, Layout section, Device and Documentation Support section, andMechanical, Packaging, and Orderable Information section. ................................................................................................. 1

    http://www.ti.com/product/ina128?qgpn=ina128http://www.ti.com/product/ina129?qgpn=ina129http://www.ti.comhttp://www.ti.com/product/ina128?qgpn=ina128http://www.ti.com/product/ina129?qgpn=ina129http://www.go-dsp.com/forms/techdoc/doc_feedback.htm?litnum=SBOS051D&partnum=INA128

  • R

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    INA128, INA129www.ti.com SBOS051D OCTOBER 1995REVISED JANUARY 2018

    Product Folder Links: INA128 INA129

    Submit Documentation FeedbackCopyright 19952018, Texas Instruments Incorporated

    5 Pin Configuration and Functions

    D and P Packages8-Pin SOIC and PDIP

    Top View

    Pin FunctionsPIN

    I/O DESCRIPTIONNAME NO.REF 5 I Reference input. This pin must be driven by low impedance or connected to ground.RG 1,8 Gain setting pin. For gains greater than 1, place a gain resistor between pin 1 and pin 8.V- 4 Negative supplyV+ 7 Positive supplyVIN- 2 I Negative inputVIN+ 3 I Positive inputVO 6 I Output

    (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

    6 Specifications

    6.1 Absolute Maximum Ratingsover operating free-air temperature range (unless otherwise noted) (1)

    MIN MAX UNITSupply voltage 18 VAnalog input voltage 40 VOutput short circuit (to ground) continuousOperating temperature 40 125 CJunction temperature 150 CLead temperature (soldering, 10 seconds) 300 CStorage temperature, Tstg 55 125 C

    (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

    6.2 ESD RatingsVALUE UNIT

    V(ESD)Electrostaticdischarge

    Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 2000V

    Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) 50

    http://www.ti.com/product/ina128?qgpn=ina128http://www.ti.com/product/ina129?qgpn=ina129http://www.ti.comhttp://www.ti.com/product/ina128?qgpn=ina128http://www.ti.com/product/ina129?qgpn=ina129http://www.go-dsp.com/forms/techdoc/doc_feedback.htm?litnum=SBOS051D&partnum=INA128

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    INA128, INA129SBOS051D OCTOBER 1995REVISED JANUARY 2018 www.ti.com

    Product Folder Links: INA128 INA129

    Submit Documentation Feedback Copyright 19952018, Texas Instruments Incorporated

    6.3 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)

    MIN NOM MAX UNITV power supply 2.25 15 18 VInput common-mode voltage range for VO = 0 V 2 V V + 2 VTA operating temperature INA128-HT 55 175 CTA operating temperature INA129-HT 55 210 C

    (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport.

    6.4 Thermal Information

    THERMAL METRIC (1)INA12x

    UNITD (SOIC) P (PDIP)8 PINS 8 PINS

    RJA Junction-to-ambient thermal resistance 110 46.1 C/WRJC(top) Junction-to-case (top) thermal resist