This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

November 2013 DocID025538 Rev 1 1/13

STE145N65M5

N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh™ V Power MOSFET in a ISOTOP package

Datasheet - preliminary data

Figure 1. Internal schematic diagram

Features

• Very low RDS(on)

• Higher VDSS rating

• Higher dv/dt capability

• Excellent switching performance

• 100% avalanche tested

Applications• Switching applications

DescriptionThis device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

ISOTOP

Order code VDS @Tjmax RDS(on) max ID

STE145N65M5 710 V 0.015 Ω 143 A

Table 1. Device summary

Order code Marking Packages Packaging

STE145N65M5 145N65M5 ISOTOP Tube

www.st.com

Contents STE145N65M5

2/13 DocID025538 Rev 1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

DocID025538 Rev 1 3/13

STE145N65M5 Electrical ratings

13

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 143 A

ID Drain current (continuous) at TC = 100 °C 90 A

IDM (1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 572 A

PTOT Total dissipation at TC = 25 °C 679 W

IARMax current during repetitive or single pulse avalanche (pulse width limited by TJMAX)

17 A

EASSingle pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)2420 mJ

dv/dt(2)

2. ISD ≤ 143 A, di/dt = 400 A/µs, VDD = 400 V, VDS (peak) < V(BR)DSS.

Peak diode recovery voltage slope 15 V/ns

Tstg Storage temperature - 55 to 150 °C

Tj Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.184 °C/W

Rthj-amb Thermal resistance junction-ambient max 30 °C/W

Electrical characteristics STE145N65M5

4/13 DocID025538 Rev 1

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 1 mA, VGS = 0 650 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 650 V 10 µA

VDS = 650 V, TC=125 °C 100 µA

IGSSGate-body leakage

current (VDS = 0)VGS = ± 25 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 69 A 0.012 0.015 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0

- 18500 - pF

Coss Output capacitance - 413 - pF

CrssReverse transfer capacitance

- 11 - pF

Co(tr)(1)

1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance time related

VGS = 0, VDS = 0 to 520 V - 1950 - pF

Co(er)(2)

2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

Equivalent capacitance energy related

VGS = 0, VDS = 0 to 520 V - 415 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 0.7 - Ω

Qg Total gate charge VDD = 520 V, ID = 69 A,VGS = 10 V

(see Figure 15)

- 414 - nC

Qgs Gate-source charge - 114 - nC

Qgd Gate-drain charge - 164 - nC

DocID025538 Rev 1 5/13

STE145N65M5 Electrical characteristics

13

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(v) Voltage delay timeVDD = 400 V, ID = 85 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 16)(see Figure 19)

- 255 - ns

tr(v) Voltage rise time - 11 - ns

tf(i) Current fall time - 82 - ns

tc(off) Crossing time - 88 - ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 143 A

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 572 A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 143 A, VGS = 0 - 1.5 V

trr Reverse recovery timeISD = 143 A, di/dt = 100 A/µsVDD = 100 V (see Figure 16)

- 568 ns

Qrr Reverse recovery charge - 14.5 µC

IRRM Reverse recovery current - 51 A

trr Reverse recovery time ISD = 143 A, di/dt = 100 A/µsVDD = 100 V, Tj = 150 °C(see Figure 16)

- 728 ns

Qrr Reverse recovery charge - 24.5 µC

IRRM Reverse recovery current - 67 A

Electrical characteristics STE145N65M5

6/13 DocID025538 Rev 1

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized VDS vs temperature Figure 7. Static drain-source on-resistance

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

100µs

1ms

10µs

Tj=150°CTc=25°CSingle pulse

10ms

AM17900v1

ID

150

100

50

00 10 VDS(V)

(A)

5 15

200

250

6V

VGS=10V

7V

20

8V

9V300

25

AM17901v1ID

200

100

00 2 VGS(V)4

(A)

1 3 5

50

150

250

VDS=30V

6 7 8

300

AM17902v1

VDS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.92

0.94

0.96

0.98

1.00

1.04

1.06

1.02

ID = 1mA1.08

AM10399v1

DocID025538 Rev 1 7/13

STE145N65M5 Electrical characteristics

13

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Output capacitance stored energy Figure 13. Switching losses vs gate resistance (1)

1. Eon including reverse recovery of a SiC diode.

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

ID= 250µA

AM08899v1 RDS(on)

1.7

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

2.1

ID = 69AVGS= 10V

AM08900v1

Eoss

30

20

10

00 100 VDS(V)

(µJ)

400

40

200 300

50

60

500 600

70

AM12616v1E

00 20 RG(Ω)

(μJ)

10 30

1000

2000

40

ID=85 A

VDD=400 V Eon

Eoff

3000

VGS=10 V

4000

5000

6000

7000

8000

9000

AM15555v1

Test circuits STE145N65M5

8/13 DocID025538 Rev 1

3 Test circuits

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

DocID025538 Rev 1 9/13

STE145N65M5 Package mechanical data

13

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Package mechanical data STE145N65M5

10/13 DocID025538 Rev 1

Table 8. ISOTOP mechanical data

Dim.mm

Min. Typ. Max.

A 11.80 12.20

A1 8.90 9.10

B 7.80 8.20

C 0.75 0.85

C2 1.95 2.05

D 37.80 38.20

D1 31.50 31.70

E 25.15 25.50

E1 23.85 24.15

E2 24.80

G 14.90 15.10

G1 12.60 12.80

G2 3.50 4.30

F 4.10 4.30

F1 4.60 5

φP 4 4.30

P1 4 4.40

S 30.10 30.30

DocID025538 Rev 1 11/13

STE145N65M5 Package mechanical data

13

Figure 20. ISOTOP drawing

0041565_Rev_I

Revision history STE145N65M5

12/13 DocID025538 Rev 1

5 Revision history

Table 9. Document revision history

Date Revision Changes

18-Nov-2013 1 Initial release.

DocID025538 Rev 1 13/13

STE145N65M5

13

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