Post on 03-Mar-2021
This is information on a product in full production.
November 2012 Doc ID 022225 Rev 2 1/13
13
STY100NM60N
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package
Datasheet — production data
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications■ Switching applications
DescriptionThis device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Figure 1. Internal schematic diagram
TypeVDSS
@ TJmaxRDS(on) max ID
STY100NM60N 650 V < 0.029 Ω 98 A
Max247
123
Table 1. Device summary
Order code Marking Package Packaging
STY100NM60N 100NM60N Max247 Tube
www.st.com
Contents STY100NM60N
2/13 Doc ID 022225 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STY100NM60N Electrical ratings
Doc ID 022225 Rev 2 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage 25 V
ID Drain current (continuous) at TC = 25 °C 98 A
ID Drain current (continuous) at TC = 100 °C 62 A
IDM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 392 A
PTOT Total dissipation at TC = 25 °C 625 W
dv/dt(2)
2. ISD ≤ 98 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature- 55 to 150
°C
Tj Max. operating junction temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.2 °C/W
Rthj-amb Thermal resistance junction-ambient max 30 °C/W
Tj Maximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IARAvalanche current, repetetive or not repetetive (pulse width limited by Tjmax)
15 A
EASSingle pulse avalanche energy (starting Tj=25 °C, ID=Iar, VDD=50)
757 mJ
Electrical characteristics STY100NM60N
4/13 Doc ID 022225 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown voltage (VGS = 0)
ID = 1 mA 600 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 600 VVDS = 600 V, TC=125 °C
10150
µAµA
IGSSGate-body leakagecurrent (VDS = 0)
VGS = ± 25 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)Static drain-source on- resistance
VGS = 10 V, ID = 49 A 0.028 0.029 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitanceOutput capacitance
Reverse transfer capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
-9600850
50
-pFpF
pF
Coss(eq)(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS
Equivalent output capacitance
VDS = 0 to 480 V VGS = 0 - 1602 - pF
RGIntrinsic gate resistance
f = 1 MHz open drain - 1.3 - Ω
Qg
Qgs
Qgd
Total gate chargeGate-source chargeGate-drain charge
VDD = 480 V, ID = 98 A,VGS = 10 V(see Figure 15)
-33040
174-
nCnCnC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
trtd(off)
tf
Turn-on delay timeRise time
Turn-off delay timeFall time
VDD = 300 V, ID = 49 A, RG = 4.7 Ω, VGS = 10 V
(see Figure 16) and(see Figure 19)
-
4552
37281
-
nsns
nsns
STY100NM60N Electrical characteristics
Doc ID 022225 Rev 2 5/13
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)-
98
392
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 98 A, VGS = 0 - 1.6 V
trrQrr
IRRM
Reverse recovery timeReverse recovery charge
Reverse recovery current
ISD = 98 A, di/dt = 100 A/µsVDD = 60 V
(see Figure 16)
-62216.5
52.5
nsµC
A
trrQrr
IRRM
Reverse recovery time
Reverse recovery chargeReverse recovery current
ISD = 98 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C(see Figure 16)
-
820
2766
ns
µCA
Electrical characteristics STY100NM60N
6/13 Doc ID 022225 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
100
10
1
0.1 1 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
100µs
10µs
Tj=150°CTc=25°C
Sinlgepulse
1ms
0.1100
10ms
AM15386v1
10-4
10-3 10
-210
-1tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Single pulse
δ=0.5
AM09125v1
ID
120
80
40
00 4 VDS(V)12
(A)
160
4V
5V
VGS=10V
6V
16
7V
188
200
240
AM15391v1 ID
120
80
00 4 VGS(V)
(A)
160
40
2
VDS=10 V
6 8
200
240
AM15384v1
VGS
6
4
2
00 50 Qg(nC)
(V)
8
100 150
10
VDD=480V
200 250
12
300
300
200
100
0
400
500
VDS
(V)ID=98A
VDS
AM15389v1RDS(on)
0.0275
0.0270
0.0265
0.02600 80 ID(A)
(Ω)
40
0.0280
0.0285
20 60 100
VGS= 10 V
0.0290
0.0295
AM15394v1
STY100NM60N Electrical characteristics
Doc ID 022225 Rev 2 7/13
Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs temperature
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized BVDSS vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Output capacitance stored energy
C
1000
100.1 1 VDS(V)
(pF)
10
Ciss
Coss
Crss
100
100
10000
AM15385v1 RDS(on)
1.5
1.3
0.7
0.5-50 0 TJ(°C)
(norm)
-25 25 50
0.9
1.1
ID= 49 A
75 100
1.7
1.9
2.1
AM15387v1
TJ(°C)
ID =250 µA1.05
0.90
0.75
0.70-50 0-25 25 50
0.80
0.85
VGS(th)
(norm)
75 100 125
0.95
1.00
AM15393v1 VDS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.920.94
0.96
0.98
1.00
1.02
1.04
1.06
ID=1mA
1.08
1.10
AM09028v1
VSD
0 20 ISD(A)
(V)
60400
0.2
0.4
0.6
TJ=-50°C
TJ=150°C
TJ=25°C0.8
80
1
1.2
1.4
AM15391v1 Eoss
30
20
10
00 100 VDS(V)
(µJ)
400
40
200 300
50
60
500 600
AM15390v1
Test circuits STY100NM60N
8/13 Doc ID 022225 Rev 2
3 Test circuits
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
STY100NM60N Package mechanical data
Doc ID 022225 Rev 2 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Package mechanical data STY100NM60N
10/13 Doc ID 022225 Rev 2
Table 9. Max247 mechanical data
Dim.mm
Min. Typ. Max.
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b1 2.00 2.40
b2 3.00 3.40
c 0.40 0.80
D 19.70 20.30
e 5.35 5.55
E 15.30 15.90
L 14.20 15.20
L1 3.70 4.30
STY100NM60N Package mechanical data
Doc ID 022225 Rev 2 11/13
Figure 20. Max247 drawing
0094330_Rev_D
Revision history STY100NM60N
12/13 Doc ID 022225 Rev 2
5 Revision history
Table 10. Document revision history
Date Revision Changes
14-Sep-2011 1 First release.
05-Nov-2012 2Document status promoted from preliminary to production data.Added Section 2.1: Electrical characteristics (curves).Minor text changes.
STY100NM60N
Doc ID 022225 Rev 2 13/13
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