SMD Type

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MOSFET

P-Channel MOSFET2SJ607-ZJ

■ Features ● VDS (V) =-60V

● ID =-83A

● RDS(ON) ＜ 11mΩ (VGS =-10V)

● RDS(ON) ＜ 16mΩ (VGS =-4V)

● Low Ciss: Ciss = 7500 pF (TYP.)

Source

BodyDiode

GateProtectionDiode

Gate

Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS -60

Gate-Source Voltage VGS ±20

Continuous Drain Current ID -83

Pulsed Drain Current (Note.1) IDM -332

Single Avalanche Current (Note.2) IAS -50

160

1.5

Single Avalanche Energy (Note.2) EAS 250 mJ

Junction Temperature TJ 150

Junction Storage Temperature Range Tstg -55 to 150℃

V

Power Dissipation PD W

A

Note.1: PW ≤ 10us,Duty Cycle ≤ 1%

Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0

SMD Type

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MOSFET

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V

Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -10 uA

Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±10 uA

Gate Cut off Voltage VGS(off) VDS=-10V,ID=-1mA -1.5 -2.5 V

VGS=-10V, ID=-42A 11

VGS=-4V, ID=-42A 16

Forward Transconductance gFS VDS=-10V, ID=-42A 45 90 S

Input Capacitance Ciss 7500

Output Capacitance Coss 1800

Reverse Transfer Capacitance Crss 430

Total Gate Charge Qg 188

Gate Source Charge Qgs 30

Gate Drain Charge Qgd 48

Turn-On DelayTime td(on) 23

Turn-On Rise Time tr 16

Turn-Off DelayTime td(off) 340

Turn-Off Fall Time tf 160

Body Diode Reverse Recovery Time trr 64

Body Diode Reverse Recovery Charge Qrr 150 nC

Diode Forward Voltage VSD IF=-83A,VGS=0V -1 V

pF

Static Drain-Source On-Resistance RDS(On) mΩ

VGS=-10V, VDS=-30V, ID=-42A,RG=0Ω

VGS=0V, VDS=-10V, f=1MHz

VGS=-10V, VDS=-48V, ID=-83A nC

ns

IF=-83A, VGS=0, dI/dt=100A/μs

■ Typical Characterisitics

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

Tch - Channel Temperature - ˚C

dT -

Per

cent

age

of R

ated

Pow

er -

%

0 4020 60 100 14080 120 160

100

80

60

40

20

0

TC - Case Temperature - ˚C

PT -

Tot

al P

ower

Dis

sipa

tion

- W

0 8020 40 60 100 140120 160

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

200

160

120

80

40

0

P-Channel MOSFET2SJ607-ZJ

SMD Type

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MOSFET

■ Typical Characterisitics

FORWARD BIAS SAFE OPERATING AREA

ID -

Dra

in C

urre

nt -

A

VDS - Drain to Source Voltage - V

10

100

1000

0.1 1 10

TC = 25˚CSingle Pulse

1100

Power Dissipation

LimitedRDS(on) Lim

ited

ID(DC)

ID(pulse) PW = 10 s100s

1 ms10 msDC

PW - Pulse Width - s

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t)

- Tr

ansi

ent T

herm

al R

esis

tanc

e - ˚

C/W

10

0.01

0.1

1

100

1000

1 m 10 m 100 m 1 10 100 1000

Single Pulse

Rth(ch-C) = 0.78˚C/W

10 100

Rth(ch-A) = 83.3˚C/W

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

Pulsed1 2 3 4 5

VDS = 10 V

100

10

1

1000

0.1

TA = 55˚C25˚C75˚C

125˚C

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

0 2 3 4

300

240

180

120

60

01

Pulsed5

4.0 V

4.5 V

VGS = 10 V

SINGLE AVALANCHE ENERGYDERATING FACTOR

Starting Tch - Starting Channel Temperature - ˚C

Ene

rgy

Der

atin

g Fa

ctor

- %

25 50 75 100

160

140

120

100

80

60

40

20

0125 150

VDD = –30 VRG = 25 VGS = –20 0 VIAS –50 A

P-Channel MOSFET2SJ607-ZJ

SMD Type

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MOSFET

.

■ Typical CharacterisiticsFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

ID - Drain Current - A

| yf

s | -

Forw

ard

Tran

sfer

Adm

ittan

ce -

S

0.01 0.1 1

100

1000

10 100

1

10

PulsedVDS = 10 V

0.1

TA = 125˚C 75˚C 25˚C

55˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - VRD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e - m

Ω

0 2 4 6 8

Pulsed30

20

10

010

ID = 83 A42 A17 A

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT

ID - Drain Current - ARD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e - m

Ω

101

20

16

12

8

4

0100 1000

Pulsed

4.5 V10 V

VGS = 4.0 V

GATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VG

S(o

ff) -

Gat

e C

ut-o

ff V

olta

ge -

V

VDS = 10 VID = 1 mA

1.0

2.0

3.0

50 0 50 1000

150

4.0

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚CRD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e - m

Ω

50 0 50 100 150

ID = 42 A

20

16

12

8

4

0

Pulsed

10 V

VGS = 4.0 V4.5 V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1.0

ISD -

Dio

de F

orw

ard

Cur

rent

- A

0 1.5

VSD - Source to Drain Voltage - V

0.5

Pulsed

0.1

1

10

100

1000

2.0

4.0 V

VGS = 10 V

0 V

P-Channel MOSFET2SJ607-ZJ

SMD Type

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MOSFET

■ Typical CharacterisiticsCAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

Cis

s, C

oss,

Crs

s - C

apac

itanc

e - p

F

100

1000

10000

100000

0.1 1 10

VGS = 0 Vf = 1 MHz

Ciss

100

Coss

Crss

SWITCHING CHARACTERISTICS

ID - Drain Current - A

td(on

), tr,

td(o

ff), t

f - S

witc

hing

Tim

e - n

s

10

110.1

100

1000

10 100

tf

tr

td(on)

td(off)

VDD = 30 VVGS = 10 VRG = 0

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

QG - Gate Charge - nC

VD

S -

Dra

in to

Sou

rce

Vol

tage

- V

0 40 80 120 160

60

50

40

30

20

10

0

VDS

ID = 83 A12

10

8

6

4

2

0200

VGS

VDD = 48 V30 V12 V

SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

L - Inductive Load - H

IAS -

Sin

gle

Ava

lanc

he C

urre

nt -

A

10

100

1000

1m 10m

VDD = 30 VRG = 25 VGS = 20 0 V

IAS = 50 A

10 1001

EAS = 250 mJ

P-Channel MOSFET2SJ607-ZJ