DIP Type MOSFET - KEXIN

DIP Type

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MOSFET

N-Channel MOSFETIRF1404Z (KRF1404Z)

■ Features ● VDS (V) = 40V

● ID = 75 A (VGS = 10V)

● RDS(ON) ＜ 3.7mΩ (VGS = 10V)

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

TO-220

1 2 3

1 GATE2 DRAIN3 SOURCE

4.50 ± 0.209.90 ± 0.20

1.52 ± 0.10

0.80 ± 0.102.40 ± 0.20

10.00 ± 0.20

1.27 ± 0.10

ø3.60 ± 0.10

(8.70)

2.80

± 0.

1015

.90

± 0.

20

10.0

8 ±

0.30

18.9

5MA

X.

(1.7

0)

(3.7

0)(3

.00)

(1.4

6)

(1.0

0)

(45)

9.20

± 0

.20

13.0

8 ±

0.20

1.30

± 0

.10

1.30 +0.10–0.05

0.50 +0.10–0.05

2.54TYP[2.54 ± 0.20 ]

2.54TYP[2.54 ± 0.20 ]

■ Absolute Maximum Ratings Ta = 25℃

Symbol Rating Unit

VDS 40

VGS ±20

(Package Limited) Tc=25℃ 75

Continuous Drain Current (Silicon Limited) Tc=25℃ 180

Tc=100℃ 120

IDM 710

IAR

EAR

330

480

Power Dissipation Tc=25℃ PD 200 W

62

40

RthJC 0.75

TJ 175

Tstg -55 to 175

Single Pulse Avalanche Energy Tested ValueEAS

mJ

(PCB Mount)RthJA

Single Pulse Avalanche Energy

Avalanche Curren

A

Repetitive Avalanche EnergySee Fig.12a, 12b, 15, 16

V

Pulsed Drain Current

Parameter

ID

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

℃/W

℃

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

DIP Type

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MOSFET


■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 40 V

VDS=40V, VGS=0V 20

VDS=40V, VGS=0V, TJ=125℃ 250

Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA

Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 2 4 V

Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=75A 2.7 3.7 mΩ

Forward Transconductance gFS VDS=25V, ID=75A 170 S

Input Capacitance Ciss 4340

Output Capacitance Coss 1030

Reverse Transfer Capacitance Crss 550

Output Capacitance Coss VGS=0V, VDS=1V, f=1MHz 3300

Output Capacitance Coss VGS=0V, VDS=32V, f=1MHz 920

Effective Output Capacitance Coss eff VGS=0V, VDS=0V to 32V 1350

Total Gate Charge Qg 100 150

Gate Source Charge Qgs 31

Gate Drain Charge Qgd 42

Turn-On DelayTime td(on) 18

Turn-On Rise Time tr 110

Turn-Off DelayTime td(off) 36

Turn-Off Fall Time tf 58

Body Diode Reverse Recovery Time trr 28 42

Body Diode Reverse Recovery Charge Qrr 34 51 nC

Internal Drain Inductance LD 4.5

Internal Drain Inductance LS 7.5

Maximum Body-Diode Continuous Current IS 75

Pulsed Source Current ISM 750

Diode Forward Voltage VSD IS=75A,VGS=0V,Tj = 25℃ 1.3 V

Zero Gate Voltage Drain Current IDSS μA

VGS=10V, VDS=20V, ID=75A,RG=3Ω

VGS=0V, VDS=25V, f=1MHz

VGS=10V, VDS=32V, ID=75A nC

pF

IF= 75A, dI/dt= 100A/μs,VDD=20V,Tj = 25℃

A

Between lead,6mm (0.25in.) frompackage and center of die contact nH

ns

MOSFET symbolshowing thentegral reversep-n junction diode.

DIP Type

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MOSFET


■ Typical Characterisitics

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward TransconductanceVs. Drain Current

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D,D

rain

-to-S

ourc

eC

urre

nt(A

)

4.5V

20µs PULSE WIDTHTj = 25°C

0.1 1 10 100


10

100

1000

I D,D

rain

-to-S

ourc

eC

urre

nt(A

)

4.5V 20µs PULSE WIDTHTj = 175°C

0 40 80 120 160

ID, Drain-to-Source Current (A)

0

40

80

120

160

200

Gfs

,For

war

dTr

ansc

ondu

ctan

ce(S

)

TJ = 25°C

TJ = 175°C

VDS = 15V20µs PULSE WIDTH

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0

VGS, Gate-to-Source Voltage (V)

1

10

100

1000

I D,D

rain

-to-S

ourc

eC

urre

nt ( A

)

TJ = 25°CTJ = 175°C

VDS = 15V20µs PULSE WIDTH

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

1 10 100


0

2000

4000

6000

8000

C,C

apac

itanc

e(p

F)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = CgdCoss = Cds + Cgd

0 40 80 120 160

QG Total Gate Charge (nC)

0

4

8

12

16

20

V GS

,Gat

e-to

-Sou

rce

Volta

ge(V

) VDS= 32VVDS= 20V

ID= 75A

DIP Type

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MOSFET

.



Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain DiodeForward Voltage

0.2 0.6 1.0 1.4 1.8

VSD, Source-toDrain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

I SD

,Rev

erse

Dra

inC

urre

nt(A

)

TJ = 25°C

TJ = 175°C

VGS = 0V

0 1 10 100 1000

VDS , Drain-toSource Voltage (V)

1

10

100

1000

10000

I D,

Dra

in-to

-Sou

rce

Cur

rent

(A)

Tc = 25°CTj = 175°CSingle Pulse

1msec

10msec

OPERATION IN THIS AREA LIMITED BY R DS(on)

100µsec

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

Fig 10. Normalized On-ResistanceVs. Temperature

25 50 75 100 125 150 175

TC , Case Temperature (°C)

0

40

80

120

160

200

I D,D

rain

Cur

rent

(A)

LIMITED BY PACKAGE

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

RD

S(on

),D

rain

-to-S

ourc

eO

nR

esis

tanc

e(N

orm

aliz

ed)

ID = 75AVGS = 10V

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

Ther

mal

Res

pons

e(Z

thJC

)

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

DIP Type

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MOSFET



QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+-

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain CurrentFig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 14. Threshold Voltage Vs. Temperature

RG

IAS

0.01Ωtp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20VVGS

25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

0

100

200

300

400

500

600

E AS,

Sing

lePu

lse

Aval

anch

eEn

ergy

(mJ)

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

2.0

3.0

4.0

V GS(

th)

Gat

eth

resh

old

Volta

ge(V

)

ID = 250µA

DIP Type

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MOSFET



Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche EnergyVs. Temperature

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

1

10

100

1000

10000

Aval

anch

eC

urre

nt(A

)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

E AR

,Ava

lanc

heEn

ergy

(mJ)

TOP Single Pulse BOTTOM 10% Duty CycleID = 75A

DIP Type MOSFET - KEXIN

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