MOSFET - KEXIN · RDS(ON) ＜ 100mΩ (VGS =-10V) ... TJ 150 Tstg-55 to 150 ID ower D is pat n J unc...

SMD Type

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MOSFET

P-Channel MOSFETKI2955DS

■ Features ● VDS (V) =-60V

● ID =-3.5 A (VGS =-10V)

● RDS(ON) ＜ 100 mΩ (VGS =-10V)

● RDS(ON) ＜ 120 mΩ (VGS =-4.5V)

■ Absolute Maximum Ratings Ta = 25℃

Symbol Rating Unit

VDS -60

VGS ±20

Ta = 25℃ -3.5

Ta = 100℃ -2.2

Pulsed Drain Current (Note.1) IDM -20

PD 1.25 W

Thermal Resistance.Junction- to-Ambient (Note.2) RthJA 100 ℃/W

TJ 150

Tstg -55 to 150

ID

Power Dissipation

Junction Temperature

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V

A

℃ Junction Storage Temperature Range

Note.1:Pulse Width ≤300μs, Duty Cycle≤2%

Note.2:1.Surface mounted on 1 in² copper pad of FR-4 board. 156/W when mounted on minimum copper pad.

0.4 +0.1-0.1

2.9 +0.1-0.1

0.95 +0.1-0.1

1.9 +0.1-0.1

2.4

+0.1

-0.1

1.3

+0.1

-0.1

0-0.1

0.38

+0.1

-0.1

0.97

+0.1

-0.1

0.55

0.4

1 2

3

Unit: mmSOT-23

0.1 +0.05-0.01

1. Gate2. Source3. Drain

SMD Type

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MOSFET


■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V

VDS=-48V, VGS=0V 1

VDS=-48V, VGS=0V, TJ=70℃ 25

Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA

Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -2.5 V

VGS=-10V, ID=-3A 100

VGS=-4.5V, ID=-2.7A 120

Forward Transconductance gFS VDS=-5V, ID=-3A 5.8 S

Input Capacitance Ciss 929

Output Capacitance Coss 48

Reverse Transfer Capacitance Crss 33

Total Gate Charge Qg 14

Gate Source Charge Qgs 3

Gate Drain Charge Qgd 3.4

Turn-On DelayTime td(on) 10

Turn-On Rise Time tr 22

Turn-Off DelayTime td(off) 27

Turn-Off Fall Time tf 14

Body Diode Reverse Recovery Time trr 12

Body Diode Reverse Recovery Charge Qrr 7 nC

Maximum Body-Diode Continuous Current IS -3.5

Body-Diode Pulsed Current ISM -20

Diode Forward Voltage VSD IS=-2A,VGS=0V -1.2 V

VGS=0V, VDS=-30V, f=1MHz

VGS=-10V, VDS=-30V, ID=-3.5A

IF=-2A, VGS=0V, dI/dt=100A/μs

A

pF

nC

ns

Zero Gate Voltage Drain Current IDSS uA

mΩ

VGS=-10V, VDS=-30V, ID=-1A,RG=6Ω

RDS(On) Static Drain-Source On-Resistance

Note:Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

■ Marking

Marking 2955

SMD Type

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MOSFET


■ Typical CharacterisiticsTypical Output Characteristics

0

5

10

15

20

0 1 2 3 4 5-VDS, Drain-Source Voltage(V)

-I D, D

rain

Cur

rent

(A)

-VGS=2.5V

-VGS=3V

-VGS=3.5V

-VGS=4V

10V

9V

8V

7V

6V

4.5V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25 0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

-BV D

SS, N

orm

aliz

ed D

rain

-Sou

rce

Bre

akdo

wn

Volta

geID=-250uA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01 0.1 1 10-ID, Drain Current(A)

RDS

(on) ,

Sta

tic D

rain

-Sou

rce

On-

Sta

teR

esis

tanc

e(mΩ)

V GS=-10V

V GS=-3VV GS=-3.5V

V GS=-4.5V

V GS=-4V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

0 2 4 6 8 1

-IDR, Reverse Drain Current (A)

-VSD

, Sou

rce-

Dra

in V

olta

ge(V

)

0

Tj=25°C

Tj=150°C

V GS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

20

40

60

80

100

120

140

160

180

200

0 2 4 6 8 10

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -20 20 60 100 140 180


RD

S(O

N), N

orm

aliz

ed S

tatic

Dra

in-

Sour

ce O

n-St

ate

Res

ista

nce

V GS=-4.5V, ID =-2.7A

V GS=-10V, I D =-3A

-VGS, Gate-Source Voltage(V)

R DS(

ON), S

tatic

Dra

in-S

ourc

e O

n-St

ate

Res

ista

nce(

mΩ

)

ID=-3A

ID=-2.7A

SMD Type

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MOSFET

.


■ Typical CharacterisiticsCapacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1 1 10 100-VDS, Drain-Source Voltage(V)

Cap

acita

nce-

--(p

F)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-60 -40 -20 0 20 40 60 80 100 120 140 160


-VG

S(th

), Nor

mal

ized

Thr

esho

ld V

olta

ge

ID=-250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1 10-ID, Drain Current(A)

GFS

, For

war

d Tr

ansf

er A

dmitt

ance

-(S)

V DS=-10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16

Qg, Total Gate Charge(nC)

-VG

S, G

ate-

Sour

ce V

olta

ge(V

)

ID=-3.5A

V DS=-48V

V DS=-30V

V DS=-15V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01 0.1 1 10 100-VDS, Drain-Source Voltage(V)

-ID,

Dra

in C

urre

nt (A

)

DC

10ms

100ms

1ms

100μs

TA=25°C, Tj=150°CRθJA=78°C/W, VGS =-10VSingle Pulse

1s

R DS(ON)

Limit

Maximum Drain Current vs JunctionTemperature

0

0.5

1

1.5

2

2.5

3

3.5

4

25 50 75 100 125 150 175Tj, Junction Temperature(°C)

I D, M

axim

um D

rain

Cur

rent

(A)

TA =25°C, VGS=-10V, RθJA=78°C/W

SMD Type

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MOSFET


■ Typical Characterisitics

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t1, Square Wave Pulse Duration(s)

r(t),

Nor

mal

ized

Effe

ctiv

eTra

nsie

nt T

herm

alR

esis

tanc

e

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA (t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=78°C/W

MOSFET - KEXIN · RDS(ON) ＜ 100mΩ (VGS =-10V) ... TJ 150 Tstg-55 to 150 ID ower D is pat n J unc...

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Transcript of MOSFET - KEXIN · RDS(ON) ＜ 100mΩ (VGS =-10V) ... TJ 150 Tstg-55 to 150 ID ower D is pat n J unc...