SMD Type

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MOSFET

Dual P-Channel MOSFETAO4801 (KO4801)

Features VDS (V) = -30V

ID = -5 A (VGS = -10V)

RDS(ON) ＜ 48mΩ (VGS = -10V)

RDS(ON) ＜ 57mΩ (VGS = -4.5V)

RDS(ON) ＜ 80mΩ (VGS = -2.5V)

SOP-8

0.21

+0.0

4-0

.02

1.50 0.15

Unit:mm

1 S2 2 G23 S14 G1

5 D1 6 D17 D28 D2

Absolute Maximum Ratings Ta = 25

Symbol Rating Unit

VDS -30

VGS ±12

TA=25 -5

TA=70 -4

IDM -28

IAS, IAR -11

Avalanche Energy L=0.3mH EAS, EAR 18 mJ

TA=25 2

TA=70 1.3

t ≤ 10s 62.5

Steady-State 90

RthJL 40

TJ 150

Tstg -55 to 150

Avalanche Current

A

Thermal Resistance.Junction- to-Ambient RthJA

V

Pulsed Drain Current

Parameter

Continuous Drain Current ID

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

PD W Power Dissipation

/W

Thermal Resistance.Junction- to-Lead

G1

D1

S1

G2

D2

S2

SMD Type

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MOSFET

Dual P-Channel MOSFETAO4801 (KO4801)

Electrical Characteristics Ta = 25

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V

VDS=-30V, VGS=0V -1

VDS=-30V, VGS=0V, TJ=55 -5

Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA

Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250uA -0.5 -1.3 V

VGS=-10V, ID=-5A 48

VGS=-10V, ID=-5A TJ=125 60

VGS=-4.5V, ID=-3.5A 57

VGS=-2.5V, ID=-2.5A 80

On State Drain Current ID(ON) VGS=-4.5V, VDS=-5V -28 A

Forward Transconductance gFS VDS=-5V, ID=-5A 18 S

Input Capacitance Ciss 645

Output Capacitance Coss 80

Reverse Transfer Capacitance Crss 55

Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 4 12 Ω

Total Gate Charge (4.5V) Qg 7

Gate Source Charge Qgs 1.5

Gate Drain Charge Qgd 2.5

Turn-On DelayTime td(on) 6.5

Turn-On Rise Time tr 3.5

Turn-Off DelayTime td(off) 41

Turn-Off Fall Time tf 9

Body Diode Reverse Recovery Time trr 11

Body Diode Reverse Recovery Charge Qrr 3.5 nC

Maximum Body-Diode Continuous Current IS -2.5 A

Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

Zero Gate Voltage Drain Current IDSS uA

mΩRDS(On) Static Drain-Source On-Resistance

VGS=-4.5V, VDS=-15V, ID=-5A

pF

nC

ns VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω

IF= -5A, dI/dt= 100A/us

VGS=0V, VDS=-15V, f=1MHz

Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

Marking4801

KA****Marking

SMD Type

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MOSFET

Dual P-Channel MOSFETAO4801 (KO4801)

Typical Characterisitics

175

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

-I D(A

)

10

30

50

70

90

0 2 4 6 8 10-ID (A)

Figure 3: On-Resistance vs. Drain Current andGate Voltage (Note E)

RD

S(O

N) (

mΩΩ ΩΩ

)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)

-I S (A

)

25°C

125°C

0.8

1

1.2

1.4

1.6

1.8

0 25 50 75 100 125 150 175

Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature

(Note E)

Nor

mal

ized

On-

Res

ista

nce

VGS=-2.5VID=-2.5A

VGS=-10VID=-5A

VGS=-4.5VID=-3.5A

20

40

60

80

100

0 2 4 6 8 10-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage(Note E)

RD

S(O

N) (

mΩΩ ΩΩ

)

25°C

125°C

VDS=-5V

VGS=-4.5V

VGS=-10V

ID=-5A

25°C

125°C

0

5

10

15

20

25

30

0 1 2 3 4 5

-VDS (Volts)Fig 1: On-Region Characteristics (Note E)

-I D (A

)

VGS=-2V

-2.5V

-4.5V-3V

-10V

VGS=-2.5V

SMD Type

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MOSFET

.

Dual P-Channel MOSFETAO4801 (KO4801)

Typical Characterisitics

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Z θθ θθJA

Nor

mal

ized

Tra

nsie

ntTh

erm

al R

esis

tanc

e

1

10

100

1000

10000

0.00001 0.001 0.1 10 1000

Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

Pow

er (W

)

TJ(Max)=150°CTA=25°C

0

1

2

3

4

5

0 3 6 9 12Qg (nC)

Figure 7: Gate-Charge Characteristics

-VG

S (V

olts

)

0

200

400

600

800

1000

1200

0 5 10 15 20 25 30-VDS (Volts)

Figure 8: Capacitance Characteristics

Cap

acita

nce

(pF)

Ciss

CossCrss

VDS=-15VID=-5A

0.0

0.1

1.0

10.0

100.0

0.1 1 10 100-VDS (Volts)

-I D (A

mps

)

Figure 9: Maximum Forward BiasedSafe Operating Area (Note F)

10µs

10s

1ms

DC

RDS(ON)

limited

TJ(Max)=150°CTA=25°C

100µs

1s

10ms

Single Pulse

D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=90°C/W