This is information on a product in full production.

November 2012 Doc ID 022225 Rev 2 1/13

13

STY100NM60N

N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package

Datasheet — production data

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications■ Switching applications

DescriptionThis device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Figure 1. Internal schematic diagram

TypeVDSS

@ TJmaxRDS(on) max ID

STY100NM60N 650 V < 0.029 Ω 98 A

Max247

123

Table 1. Device summary

Order code Marking Package Packaging

STY100NM60N 100NM60N Max247 Tube

www.st.com

Contents STY100NM60N

2/13 Doc ID 022225 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

STY100NM60N Electrical ratings

Doc ID 022225 Rev 2 3/13

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage 25 V

ID Drain current (continuous) at TC = 25 °C 98 A

ID Drain current (continuous) at TC = 100 °C 62 A

IDM (1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 392 A

PTOT Total dissipation at TC = 25 °C 625 W

dv/dt(2)

2. ISD ≤ 98 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope 15 V/ns

Tstg Storage temperature- 55 to 150

°C

Tj Max. operating junction temperature °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.2 °C/W

Rthj-amb Thermal resistance junction-ambient max 30 °C/W

Tj Maximum lead temperature for soldering purpose 300 °C

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IARAvalanche current, repetetive or not repetetive (pulse width limited by Tjmax)

15 A

EASSingle pulse avalanche energy (starting Tj=25 °C, ID=Iar, VDD=50)

757 mJ

Electrical characteristics STY100NM60N

4/13 Doc ID 022225 Rev 2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown voltage (VGS = 0)

ID = 1 mA 600 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 600 VVDS = 600 V, TC=125 °C

10150

µAµA

IGSSGate-body leakagecurrent (VDS = 0)

VGS = ± 25 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 49 A 0.028 0.029 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitanceOutput capacitance

Reverse transfer capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-9600850

50

-pFpF

pF

Coss(eq)(1)

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS

Equivalent output capacitance

VDS = 0 to 480 V VGS = 0 - 1602 - pF

RGIntrinsic gate resistance

f = 1 MHz open drain - 1.3 - Ω

Qg

Qgs

Qgd

Total gate chargeGate-source chargeGate-drain charge

VDD = 480 V, ID = 98 A,VGS = 10 V(see Figure 15)

-33040

174-

nCnCnC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

trtd(off)

tf

Turn-on delay timeRise time

Turn-off delay timeFall time

VDD = 300 V, ID = 49 A, RG = 4.7 Ω, VGS = 10 V

(see Figure 16) and(see Figure 19)

-

4552

37281

-

nsns

nsns

STY100NM60N Electrical characteristics

Doc ID 022225 Rev 2 5/13

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)-

98

392

A

A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 98 A, VGS = 0 - 1.6 V

trrQrr

IRRM

Reverse recovery timeReverse recovery charge

Reverse recovery current

ISD = 98 A, di/dt = 100 A/µsVDD = 60 V

(see Figure 16)

-62216.5

52.5

nsµC

A

trrQrr

IRRM

Reverse recovery time

Reverse recovery chargeReverse recovery current

ISD = 98 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C(see Figure 16)

-

820

2766

ns

µCA

Electrical characteristics STY100NM60N

6/13 Doc ID 022225 Rev 2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

ID

100

10

1

0.1 1 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

100µs

10µs

Tj=150°CTc=25°C

Sinlgepulse

1ms

0.1100

10ms

AM15386v1

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

AM09125v1

ID

120

80

40

00 4 VDS(V)12

(A)

160

4V

5V

VGS=10V

6V

16

7V

188

200

240

AM15391v1 ID

120

80

00 4 VGS(V)

(A)

160

40

2

VDS=10 V

6 8

200

240

AM15384v1

VGS

6

4

2

00 50 Qg(nC)

(V)

8

100 150

10

VDD=480V

200 250

12

300

300

200

100

0

400

500

VDS

(V)ID=98A

VDS

AM15389v1RDS(on)

0.0275

0.0270

0.0265

0.02600 80 ID(A)

(Ω)

40

0.0280

0.0285

20 60 100

VGS= 10 V

0.0290

0.0295

AM15394v1

STY100NM60N Electrical characteristics

Doc ID 022225 Rev 2 7/13

Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs temperature

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized BVDSS vs temperature

Figure 12. Source-drain diode forward characteristics

Figure 13. Output capacitance stored energy

C

1000

100.1 1 VDS(V)

(pF)

10

Ciss

Coss

Crss

100

100

10000

AM15385v1 RDS(on)

1.5

1.3

0.7

0.5-50 0 TJ(°C)

(norm)

-25 25 50

0.9

1.1

ID= 49 A

75 100

1.7

1.9

2.1

AM15387v1

TJ(°C)

ID =250 µA1.05

0.90

0.75

0.70-50 0-25 25 50

0.80

0.85

VGS(th)

(norm)

75 100 125

0.95

1.00

AM15393v1 VDS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.920.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA

1.08

1.10

AM09028v1

VSD

0 20 ISD(A)

(V)

60400

0.2

0.4

0.6

TJ=-50°C

TJ=150°C

TJ=25°C0.8

80

1

1.2

1.4

AM15391v1 Eoss

30

20

10

00 100 VDS(V)

(µJ)

400

40

200 300

50

60

500 600

AM15390v1

Test circuits STY100NM60N

8/13 Doc ID 022225 Rev 2

3 Test circuits

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

STY100NM60N Package mechanical data

Doc ID 022225 Rev 2 9/13

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Package mechanical data STY100NM60N

10/13 Doc ID 022225 Rev 2

Table 9. Max247 mechanical data

Dim.mm

Min. Typ. Max.

A 4.70 5.30

A1 2.20 2.60

b 1.00 1.40

b1 2.00 2.40

b2 3.00 3.40

c 0.40 0.80

D 19.70 20.30

e 5.35 5.55

E 15.30 15.90

L 14.20 15.20

L1 3.70 4.30

STY100NM60N Package mechanical data

Doc ID 022225 Rev 2 11/13

Figure 20. Max247 drawing

0094330_Rev_D

Revision history STY100NM60N

12/13 Doc ID 022225 Rev 2

5 Revision history

Table 10. Document revision history

Date Revision Changes

14-Sep-2011 1 First release.

05-Nov-2012 2Document status promoted from preliminary to production data.Added Section 2.1: Electrical characteristics (curves).Minor text changes.

STY100NM60N

Doc ID 022225 Rev 2 13/13

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