Philips Semiconductors Product specification

Triacs BT139 series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNITintended for use in applications requiringhigh bidirectional transient and blocking BT139- 600 800voltage capability and high thermal BT139- 600F 800Fcycling performance. Typical BT139- 800Gapplications include motor control, VDRM Repetitive peak off-state 600 800 Vindustrial and domestic lighting, heating voltagesand static switching. IT(RMS) RMS on-state current 16 16 A

ITSM Non-repetitive peak on-state 140 140 Acurrent

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1

2 main terminal 2

3 gate

tab main terminal 2

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-600 -800VDRM Repetitive peak off-state - 6001 800 V

voltages

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 16 AITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to

on-state current surget = 20 ms - 140 At = 16.7 ms - 150 A

I2t I2t for fusing t = 10 ms - 98 A2sdIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µstriggering T2+ G+ - 50 A/µs

T2+ G- - 50 A/µsT2- G- - 50 A/µsT2- G+ - 10 A/µs

IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 ˚CTj Operating junction - 125 ˚C

temperature

T1T2

G1 2 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 15 A/µs.

April 2003 1 Rev 1.500

Philips Semiconductors Product specification

Triacs BT139 series

THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 1.2 K/Wjunction to mounting base half cycle - - 1.7 K/W

Rth j-a Thermal resistance in free air - 60 - K/Wjunction to ambient

STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT139- ... ...F ...GIGT Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mAT2+ G- - 8 35 25 50 mAT2- G- - 10 35 25 50 mAT2- G+ - 22 70 70 100 mA

IL Latching current VD = 12 V; IGT = 0.1 AT2+ G+ - 7 40 40 60 mAT2+ G- - 20 60 60 90 mAT2- G- - 8 40 40 60 mAT2- G+ - 10 60 60 90 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 6 45 45 60 mA

VT On-state voltage IT = 20 A - 1.2 1.6 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - VTj = 125 ˚C

ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mATj = 125 ˚C

DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT139- ... ...F ...GdVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs

off-state voltage Tj = 125 ˚C; exponentialwaveform; gate opencircuit

dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µscommutating voltage IT(RMS) = 16 A;

dIcom/dt = 7.2 A/ms; gateopen circuit

tgt Gate controlled turn-on ITM = 20 A; VD = VDRM(max); - - - 2 - µstime IG = 0.1 A; dIG/dt = 5 A/µs

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Philips Semiconductors Product specification

Triacs BT139 series

Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp ≤ 20ms.

Fig.3. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.

Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb ≤ 99˚C.

Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0 5 10 15 200

5

10

15

20

25

= 180

120

90

60

30

IT(RMS) / A

Ptot / W Tmb(max) / C

125

119

113

107

101

95

1

-50 0 50 100 1500

5

10

15

20BT139

99 C

Tmb / C

IT(RMS) / A

10us 100us 1ms 10ms 100ms10

100

1000

T / s

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

dI /dt limitT

T2- G+ quadrant

0.01 0.1 1 100

10

20

30

40

50

surge duration / s

IT(RMS) / A

1 10 100 10000

50

100

150

Number of cycles at 50Hz

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

-50 0 50 100 1500.4

0.6

0.8

1

1.2

1.4

1.6

Tj / C

VGT(Tj)VGT(25 C)

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Philips Semiconductors Product specification

Triacs BT139 series

Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.

Fig.12. Typical commutation dV/dt versus junctiontemperature, parameter commutation dIT/dt. The triacshould commutate when the dV/dt is below the valueon the appropriate curve for pre-commutation dIT/dt.

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

T2+ G+T2+ G-T2- G-T2- G+

IGT(Tj)IGT(25 C)

0 0.5 1 1.5 2 2.5 30

10

20

30

40

50

VT / V

IT / A

Tj = 125 CTj = 25 C

typ maxVo = 1.195 VRs = 0.018 Ohms

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IL(Tj)IL(25 C)

0.001

0.01

0.1

1

10

tp / s

Zth j-mb (K/W)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tpP

t

D

unidirectional

bidirectional

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IH(Tj)IH(25C)

0 50 100 1501

10

100

1000

Tj / C

9.3

dV/dt (V/us)

5.6

dIcom/dt =20 A/ms 16

off-state dV/dt limit

BT139 SERIES

BT139...F SERIES

12 7.2

BT139...G SERIES

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Philips Semiconductors Product specification

Triacs BT139 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes1. Refer to mounting instructions for SOT78 (TO220) envelopes.2. Epoxy meets UL94 V0 at 1/8".

10,3max

3,7

2,8

3,03,0 maxnot tinned

1,3max(2x)

1 2 3

2,40,6

4,5max

5,9min

15,8max

1,3

2,54 2,54

0,9 max (3x)

13,5min

April 2003 5 Rev 1.500

Philips Semiconductors Product specification

Triacs BT139 series

DEFINITIONS

DATA SHEET STATUS

DATA SHEET PRODUCT DEFINITIONSSTATUS2 STATUS3

Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct

Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2003

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.

3 The product status of the device(s) described in this datasheet may have changed since this datasheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

April 2003 6 Rev 1.500