October 2008

©20FD

FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

TM

UniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFET

Features• 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V• Low gate charge ( typical 105 nC)• Low Crss ( typical 45 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability

DescriptionThese N-Channel enhancement mode power field effect transis-tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.

S

D

G

GSD

TO-247FDH Series G SD

TO-3PNFDA Series

Absolute Maximum RatingsSymbol Parameter FDH50N50_F133/FDA50N50 Unit

VDSS Drain-Source Voltage 500 V

ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)

4830.8

AA

IDM Drain Current - Pulsed (Note 1) 192 A

VGSS Gate-Source voltage ±20 V

EAS Single Pulsed Avalanche Energy (Note 2) 1868 mJ

IAR Avalanche Current (Note 1) 48 A

EAR Repetitive Avalanche Energy (Note 1) 62.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)- Derate above 25°C

6255

WW/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C

Thermal CharacteristicsSymbol Parameter Min. Max. Unit

RθJC Thermal Resistance, Junction-to-Case -- 0.2 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

08 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

FD

FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Package Marking and Ordering InformationDevice Marking Device Package Reel Size Tape Width Quantity

FDH50N50_F133 FDH50N50_F133 TO-247 - - 30

FDA50N50 FDA50N50 TO-3PN - - 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max UnitsOff Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 -- -- V

ΔBVDSS/ ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.5 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0VVDS = 400V, TC = 125°C

----

----

25250

μAμA

IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -20V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

RDS(on) Static Drain-SourceOn-Resistance VGS = 10V, ID = 24A -- 0.089 0.105 Ω

gFS Forward Transconductance VDS = 40V, ID = 48A (Note 4) -- 20 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,f = 1.0MHz

-- 4979 6460 pF

Coss Output Capacitance -- 760 1000 pF

Crss Reverse Transfer Capacitance -- 50 65 pF

Coss Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz -- 161 -- pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 342 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 250V, ID = 48ARG = 25Ω

(Note 4, 5)

-- 105 220 ns

tr Turn-On Rise Time -- 360 730 ns

td(off) Turn-Off Delay Time -- 225 460 ns

tf Turn-Off Fall Time -- 230 470 ns

Qg Total Gate Charge VDS = 400V, ID = 48AVGS = 10V

(Note 4, 5)

-- 105 137 nC

Qgs Gate-Source Charge -- 33 -- nC

Qgd Gate-Drain Charge -- 45 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 48A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 48AdIF/dt =100A/μs (Note 4)

-- 580 -- ns

Qrr Reverse Recovery Charge -- 10 -- μC

NOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 48A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

2 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

FD

FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10-1 100 10110-1

100

101

102 VGS

Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

Notes : 1. 250μs Pulse Test 2. TC = 25oC�

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]4 5 6 7 8 9 10

0.1

1

10

100

Notes : 1. VDS = 40V 2. 250μs Pulse Test

-55o C�

150o C�

25o C�

I D ,

Dra

in C

urre

nt [

A]

VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0 25 50 75 100 125 150 1750.0

0.1

0.2

0.3

0.4

VGS = 20V

VGS = 10V

Note : TJ = 25oC

RD

S(O

N) [Ω

],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0

40

80

120

160

25oC

150oC

Notes : 1. VGS = 0V 2. 250μs Pulse Test

I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100 101 1020

2,000

4,000

6,000

8,000

10,000

12,000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

Notes : 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF]

VDS, Drain-Source Voltage [V]0 20 40 60 80 100 120

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

Note : ID = 48A

VG

S, G

ate-

Sou

rce

Vol

tage

[V]

QG, Total Gate Charge [nC]

3 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

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50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variationvs. Temperature vs. Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes : 1. V

GS = 0 V

2. ID = 250 μA

BV

DS

S, (

Nor

mal

ized

)D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

Notes : 1. VGS = 10 V 2. ID = 24 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

100 101 102 10310-1

100

101

102

103

10 us

DC10 ms

1 ms100 us

Operation in This Area is Limited by R DS(on)

Notes : 1. TC = 25 oC

2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 1500

10

20

30

40

50

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [oC]

Figure 11. Typical Drain Current Slope Figure 12. Typical Drain-Source Voltagevs. Gate Resistance Slope vs. Gate Resistance

0 5 10 15 20 25 30 35 40 45 500

5

10

15

20

25

30

35

40

45 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A

4. TJ = 125oC�

dv/dt(off)

dv/dt(on)

dv/d

t [V

/nS

]

RG, Gate resistance [Ω]0 5 10 15 20 25 30 35 40 45 50

0

500

1,000

1,500

2,000

2,500

3,000

3,500

4,000 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A

4. TJ = 125oC

di/dt(off)

di/dt(on)

di/d

t [A

/μS

]

RG, Gate resistance [Ω]

4 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

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FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Typical Performance Characteristics (Continued)

Figure 13. Typical Switching Losses vs. Figure 14. Unclamped Inductive Switching Gate Resistance Capability

0 5 10 15 20 25 30 35 40 45 500

200

400

600

800

1,000

Notes : 1. VDS = 400 V 2. VGS = 12 V 3. I

D = 25A

4. TJ = 125oC�

Eoff

Eon

Ene

rgy

[μJ]

RG, Gate resistance [Ω]0.01 0.1 1 10 1001

10

100

Starting TJ = 150oC

Notes : 1. If R = 0 Ω tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R ≠ 0 Ω tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]

Starting TJ = 25oC

I AS, A

vala

nche

Cur

rent

[A]

tAV, Time In Avalanche [ms]

Figure 15. Transient Thermal Resistance Curve

10-5 10-4 10-3 10-2 10-1 100 10110-3

10-2

10-1

Notes : 1. Z

θJC(t) = 0.2 oC/W Max. 2. Duty Factor, D=t1/t2

3. TJM - TC = PDM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z θJC(t)

, The

rmal

Res

pons

e

t1, Square Wave Pulse Duration [sec]

5 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

FD

FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Mechanical Dimensions

TO-247AB

Dimensions in Millimeters

6 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

FD

FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Mechanical Dimensions

Dimensions in Millimeters

TO-3PN

7 www.fairchildsemi.comH50N50_F133 / FDA50N50 Rev. A

8 www.fairchildsemi.comFDH50N50_F133 / FDA50N50 Rev. A

FDH

50N50_F133 / FD

A50N

50 500V N-C

hannel MO

SFET

Rev. I37

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