N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power ...N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5...

This is information on a product in full production.

November 2014 DocID026321 Rev 3 1/21

STD2N105K5, STP2N105K5, STU2N105K5

N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Industry’s lowest RDS(on) x area

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

DescriptionThese very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AM01476v1

TO-220

12

3

TAB

1

3

TAB

DPAK

IPAK

32

1

TAB

Order codes VDS RDS(on) max ID PTOT

STD2N105K5

1050 V 8 Ω 1.5 A 60 WSTP2N105K5

STU2N105K5

Table 1. Device summary

Order codes Marking Package Packaging

STD2N105K5

2N105K5

DPAK Tape and reel

STP2N105K5 TO-220Tube

STU2N105K5 IPAK

www.st.com

http://www.st.com

Contents STD2N105K5, STP2N105K5, STU2N105K5

2/21 DocID026321 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 DPAK, STD2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.2 TO-220, STP2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.3 IPAK, STU2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

DocID026321 Rev 3 3/21

STD2N105K5, STP2N105K5, STU2N105K5 Electrical ratings

21

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate- source voltage ±30 V

ID Drain current (continuous) at TC = 25 °C 1.5 A

ID Drain current (continuous) at TC = 100 °C 0.95 A

IDM(1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 6 A

PTOT Total dissipation at TC = 25 °C 60 W

IAR Max current during repetitive or single pulse avalanche 0.5 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=0.5 A, VDD= 50 V)

90 mJ

dv/dt (2)

2. ISD ≤ 1.5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS.

Peak diode recovery voltage slope 4.5 V/ns

dv/dt(3)

3. VDS ≤ 840 V

MOSFET dv/dt ruggedness 50 V/ns

Tj

Tstg

Operating junction temperature

Storage temperature-55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 2.08 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.50 °C/W

Electrical characteristics STD2N105K5, STP2N105K5, STU2N105K5

4/21 DocID026321 Rev 3

2 Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 1 mA, VGS = 0 1050 V

IDSSZero gate voltage,drain current (VGS = 0)

VDS = 1050 V 1 µA

VDS = 1050 V, TC=125 °C 50 µA

IGSSGate-body leakage

current VGS = ± 20 V; VDS=0 ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 0.75 A 6 8 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS =100 V, f=1 MHz, VGS=0

- 115 - pF

Coss Output capacitance - 15 - pF

CrssReverse transfer capacitance

- 0.5 - pF

Co(tr)(1)

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Equivalent capacitance time related

VGS = 0, VDS = 0 to 840 V

- 17 - pF

Co(er)(2)

2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS

Equivalent capacitance energy related

- 6 - pF

RG Intrinsic gate resistance f = 1 MHz open drain - 20 - Ω

Qg Total gate charge VDD = 840 V, ID = 1.5 A VGS =10 V

(see Figure 18)

- 10 - nC

Qgs Gate-source charge - 1.5 - nC

Qgd Gate-drain charge - 8 - nC

DocID026321 Rev 3 5/21

STD2N105K5, STP2N105K5, STU2N105K5 Electrical characteristics

21

The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td(on) Turn-on delay time VDD = 525 V, ID = 0.75 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 17)

- 14.5 - ns

tr Rise time - 8.5 - ns

td(off) Turn-off-delay time - 35 - ns

tf Fall time - 38.5 - ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current - 1.5 A

ISDM (1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 6 A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 1.5 A, VGS = 0 - 1.5 V

trr Reverse recovery time ISD = 1.5 A, di/dt = 100 A/µs

VDD= 60 V(see Figure 19)

- 326 ns

Qrr Reverse recovery charge - 1.19 µC

IRRM Reverse recovery current - 7.3 A

trr Reverse recovery time ISD = 1.5 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C(see Figure 19)

- 525 ns

Qrr Reverse recovery charge - 1.83 µC

IRRM Reverse recovery current - 7 A

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min Typ. Max. Unit

V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V


6/21 DocID026321 Rev 3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and IPAK

Figure 3. Thermal impedance for DPAK and IPAK

ID

1

0.1

0.1 1 100 VDS(V)10

(A)

Operation in this area isLimited by max RDS(on)

100µs

1ms

10ms

Tj=150°CTc=25°CSingle pulse

0.011000

GIPG210320141029SA

Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220

Figure 6. Output characteristics Figure 7. Transfer characteristics

ID

1

0.1

0.1 1 100 VDS(V)10

(A)

Operation in this area isLimited by max RDS(on)

100µs

1ms

10ms

Tj=150°CTc=25°CSingle pulse

0.01

GIPG210320141032SA

ID

1.0

0.5

0 2 6 VDS(V)4

(A)

0.0

VGS= 10,11V

9V

8V

7V

6V

8

1.5

2.0

2.5

10 12 14 16

GIPG210320141045SAID

1

0.5

5 6 8 VGS(V)7

(A)

0

VDS= 20V

9

1.5

2

2.5

10

GIPG210320141056SA

DocID026321 Rev 3 7/21

STD2N105K5, STP2N105K5, STU2N105K5 Electrical characteristics

21

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs temperature

Figure 13. Normalized on-resistance vs temperature

VGS

4

2

0 2 6 Qg(nC)4

(V)

08

6

8

10

12

10

VDS (V)

0

100

200

300

400

500

600

700

800VDD = 840 VID = 1.5 A

VDS

GIPG210320141105SARDS(on)

6

0 1 ID(A)2

(Ω)

5

7

8

VGS= 10V

9

GIPG210320141116SA

C

10

1

0.1 1 100 VDS(V)10

(pF)

0.1

100

1000

GIPG210320141129SAE

2

0 200 600 VDS(V)400

(µJ)

0800

GIPG210320141201SA

VGS(th)

0.8

-100 -50 50 Tj(°C)0

(norm)

0.4100

0.6

1

1.2

150

ID = 100 μA

GIPG210320141203SARDS(on)

1

-100 -50 50 Tj(°C)0

(norm)

0100

0.5

1.5

2

150

2.5ID= 0.75AVGS= 10V

GIPG210320141419SA


8/21 DocID026321 Rev 3

Figure 14. Source-drain diode forward characteristics

Figure 15. Normalized V(BR)DSS vs temperature

VSD

0.7

0 0.2 0.6 ISD(A)0.4

(V)

0.50.8

0.6

0.8

0.9

1

Tj= 150°C

Tj= -50°C

Tj= 25°C

1 1.2

GIPG210320141436SAV(BR)DSS

0.95

-100 -50 50 Tj(°C)0

(norm)

0.85100

0.9

1

1.05

150

1.1ID= 1mA

1.15

GIPG210320141421SA

Figure 16.Maximum avalanche energy vs starting TJ

DocID026321 Rev 3 9/21

STD2N105K5, STP2N105K5, STU2N105K5 Test circuits

21

3 Test circuits

Figure 17. Switching times test circuit for resistive load

Figure 18. Gate charge test circuit

Figure 19. Test circuit for inductive load switching and diode recovery times

Figure 20. Unclamped inductive load test circuit

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Package mechanical data STD2N105K5, STP2N105K5, STU2N105K5

10/21 DocID026321 Rev 3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

http://www.st.com

DocID026321 Rev 3 11/21

STD2N105K5, STP2N105K5, STU2N105K5 Package mechanical data

21

4.1 DPAK, STD2N105K5

Figure 23. DPAK (TO-252) type A drawing


12/21 DocID026321 Rev 3

Table 9. DPAK (TO-252) type A mechanical data

Dim.mm

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e 2.28

e1 4.40 4.60

H 9.35 10.10

L 1.00 1.50

L1 2.80

L2 0.80

L4 0.60 1.00

R 0.20

V2 0° 8°

DocID026321 Rev 3 13/21


21

Figure 24. DPAK (TO-252) type A footprint (a)

a. All dimensions are in millimeters


14/21 DocID026321 Rev 3

4.2 TO-220, STP2N105K5

Figure 25. TO-220 type A drawing

DocID026321 Rev 3 15/21


21

Table 10. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95


16/21 DocID026321 Rev 3

4.3 IPAK, STU2N105K5

Figure 26. IPAK (TO-251) drawing

0068771_L

DocID026321 Rev 3 17/21


21

Table 11. IPAK (TO-251) type A mechanical data

DIMmm.

min. typ. max.

A 2.20 2.40

A1 0.90 1.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

B5 0.30

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e 2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

L1 0.80 1.20

L2 0.80 1.00

V1 10°

Packaging mechanical data STD2N105K5, STP2N105K5, STU2N105K5

18/21 DocID026321 Rev 3

5 Packaging mechanical data

Figure 27. Tape

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. onlyincluding draft andradii concentric around B0

AM08852v1

Top covertape

DocID026321 Rev 3 19/21

STD2N105K5, STP2N105K5, STU2N105K5 Packaging mechanical data

21

Figure 28. Reel

Table 12. DPAK (TO-252) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

Revision history STD2N105K5, STP2N105K5, STU2N105K5

20/21 DocID026321 Rev 3

6 Revision history

Table 13. Document revision history

Date Revision Changes

08-May-2014 1 First release.

14-Nov-2014 2

Document status promoted from preliminary to production data.Updated title, features and description in cover page.Updated Figure 9: Static drain-source on-resistance, Section 4.1: DPAK, STD2N105K5 and Section 4.3: IPAK, STU2N105K5.Minor text changes.

19-Nov-2004 3Updated VGS in Table 2: Absolute maximum ratings and IGSS in Table 4: On /off states.

DocID026321 Rev 3 21/21

STD2N105K5, STP2N105K5, STU2N105K5

21

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N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power ...N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5...

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