N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg ... · technology: MDmesh II Plus™ low Qg....

18
This is information on a product in full production. February 2014 DocID023937 Rev 5 1/18 18 STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Q g Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet production data Figure 1. Internal schematic diagram Features Extremely low gate charge Lower R DS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 , TAB TO-220 1 2 3 TAB 3 2 1 TAB IPAK 1 2 3 TO-247 Order codes V DS @ T Jmax R DS(on) max I D STP13N60M2 650 V 0.38 Ω 11 A STU13N60M2 STW13N60M2 Table 1. Device summary Order codes Marking Package Packaging STP13N60M2 13N60M2 TO-220 Tube STU13N60M2 IPAK STW13N60M2 TO-247 www.st.com

Transcript of N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg ... · technology: MDmesh II Plus™ low Qg....

This is information on a product in full production.

February 2014 DocID023937 Rev 5 1/18

18

STP13N60M2, STU13N60M2, STW13N60M2

N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg

Power MOSFETs in TO-220, IPAK and TO-247 packages

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower RDS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

DescriptionThese devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

, TAB

TO-2201

23

TAB

32

1

TAB

IPAK

1

2

3

TO-247

Order codes VDS @ TJmax RDS(on) max ID

STP13N60M2

650 V 0.38 Ω 11 ASTU13N60M2

STW13N60M2

Table 1. Device summary

Order codes Marking Package Packaging

STP13N60M2

13N60M2

TO-220

TubeSTU13N60M2 IPAK

STW13N60M2 TO-247

www.st.com

Contents STP13N60M2, STU13N60M2, STW13N60M2

2/18 DocID023937 Rev 5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

DocID023937 Rev 5 3/18

STP13N60M2, STU13N60M2, STW13N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS

Gate-source voltage ± 25 V

ID

Drain current (continuous) at TC

= 25 °C 11 A

ID

Drain current (continuous) at TC

= 100 °C 7 A

IDM

(1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 44 A

PTOT

Total dissipation at TC

= 25 °C 110 W

dv/dt(2)

2. ISD

≤ 11 A, di/dt ≤ 400 A/μs; VDS

peak

< V(BR)DSS

, VDD

=400 V.

Peak diode recovery voltage slope 15 V/ns

dv/dt(3)

3. VDS

≤ 480 V

MOSFET dv/dt ruggedness 50 V/ns

Tstg

Storage temperature

- 55 to 150 °C

Tj

Max. operating junction temperature

Table 3. Thermal data

Symbol ParameterValue

UnitTO-220 IPAK TO-247

Rthj-case

Thermal resistance junction-case max 1.14 °C/W

Rthj-amb

Thermal resistance junction-ambient max 62.5 100 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax

)

2.8 A

EAS

Single pulse avalanche energy (starting

Tj=25°C, I

D= I

AR; V

DD=50)

125 mJ

Electrical characteristics STP13N60M2, STU13N60M2, STW13N60M2

4/18 DocID023937 Rev 5

2 Electrical characteristics

(TC

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID

= 1 mA, VGS

= 0 600 V

IDSS

Zero gate voltage

drain current (VGS

= 0)

VDS

= 600 V

VDS

= 600 V, TC

=125 °C

1

100

μA

μA

IGSS

Gate-body leakage

current (VDS

= 0)

VGS

= ± 25 V ±10 μA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 2 3 4 V

RDS(on)

Static drain-source

on-resistance

VGS

= 10 V, ID

= 5.5 A 0.35 0.38 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Input capacitance

VDS

= 100 V, f = 1 MHz,

VGS

= 0

- 580 - pF

Coss

Output capacitance - 32 - pF

Crss

Reverse transfer

capacitance

- 1.1 - pF

Coss eq.

(1)

1. Coss eq.

is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS

= 0 to 480 V, VGS

= 0 - 120 - pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain - 6.6 - Ω

Qg

Total gate charge

VDD

= 480 V, ID

= 11 A,

VGS

= 10 V (see Figure 17)

- 17 - nC

Qgs

Gate-source charge - 2.5 - nC

Qgd

Gate-drain charge - 9 - nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

Turn-on delay time

VDD

= 300 V, ID

= 5.5 A,

RG

= 4.7 Ω, VGS

= 10 V (see

Figure 16 and 21)

- 11 - ns

tr

Rise time - 10 - ns

td(off)

Turn-off delay time - 41 - ns

tf

Fall time - 9.5 - ns

DocID023937 Rev 5 5/18

STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

Source-drain current - 11 A

ISDM

(1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 44 A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 11 A, VGS

= 0 - 1.6 V

trr

Reverse recovery time

ISD

= 11 A, di/dt = 100 A/μs

VDD

= 60 V (see Figure 18)

- 297 ns

Qrr

Reverse recovery charge - 2.8 μC

IRRM

Reverse recovery current - 18.5 A

trr

Reverse recovery timeISD

= 11 A, di/dt = 100 A/μs

VDD

= 60 V, Tj=150 °C

(see Figure 18)

- 394 ns

Qrr

Reverse recovery charge - 3.8 μC

IRRM

Reverse recovery current - 19 A

Electrical characteristics STP13N60M2, STU13N60M2, STW13N60M2

6/18 DocID023937 Rev 5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 and TO-247

Figure 3. Thermal impedance for TO-220 and TO-247

ID

10

1

0.1 1 100 VDS(V)10

(A)

Opera

tion i

n this

area

is

Limite

d by m

ax R

DS(on

)

10ms

1ms

0.1

Tj=150°CTc=25°CSingle pulse

100 µS

10µs

AM15710v1

Figure 4. Safe operating area for IPAK Figure 5. Thermal impedance for IPAK

ID

10

1

0.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by m

ax R

DS(on

)

10ms

1ms

0.1

Tj=150°CTc=25°CSingle pulse

100 µS

10µs

AM15711v1

Figure 6. Output characteristics Figure 7. Transfer characteristics

ID

12

8

4

00 8 VDS(V)

(A)

4 12

16

4V

5V

6V

VGS=7, 8, 9, 10V

16

20

AM15712v1ID

4

00 4 VGS(V)8

(A)

2 6

8

12

VDS=18V

16

20

AM15713v1

DocID023937 Rev 5 7/18

STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics

Figure 8. Normalized V(BR)DSS vs temperature Figure 9. Static drain-source on-resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage vs temperature

Figure 13. Normalized on-resistance vs temperature

V(BR)DSS

-50 TJ(°C)

(norm)

00.9

0.94

0.98

1.02

1.06

ID=1 mA

50 100

1.1

AM15714v1RDS(on)

0.360

0.350

0.340

0.3300 4 ID(A)

(Ω)

2 6

0.370

8 10

VGS=10V

AM15715v1

VGS

6

4

2

00 Qg(nC)

(V)

8

8

4

10VDD=480V

300

200

100

0

400

VDS

12 16

500

VDS(V)

ID=11A

AM15716v1 C

10

1

0.10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

100

1000

AM15717v1

VGS(th)

0.9

0.8

0.7

0.6TJ(°C)

(norm)

-50

1.0

ID=250µA

0 50 100

1.1

AM15718v1 RDS(on)

2.1

1.7

1.3

0.9

TJ(°C)

(norm)

0.5-50 0 50 100

ID=5.5 AVGS=10V

AM15719v1

Electrical characteristics STP13N60M2, STU13N60M2, STW13N60M2

8/18 DocID023937 Rev 5

Figure 14. Source-drain diode forward characteristics

Figure 15. Output capacitance stored energy

VSD

0 4 ISD(A)

(V)

2 106 80.5

0.6

0.7

0.8

TJ=-50°C

TJ=150°C

TJ=25°C0.9

1

AM15720v1Eoss

0 VDS(V)

(µJ)

200100 5000

1

2

3

4

300 400

AM15721v1

DocID023937 Rev 5 9/18

STP13N60M2, STU13N60M2, STW13N60M2 Test circuits

3 Test circuits

Figure 16. Switching times test circuit for resistive load

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load switching and diode recovery times

Figure 19. Unclamped inductive load test circuit

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2

10/18 DocID023937 Rev 5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

DocID023937 Rev 5 11/18

STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data

Figure 22. TO-220 type A drawing

Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2

12/18 DocID023937 Rev 5

Table 9. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

DocID023937 Rev 5 13/18

STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data

Figure 23. IPAK (TO-251) drawing

0068771_K

Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2

14/18 DocID023937 Rev 5

Table 10. IPAK (TO-251) mechanical data

DIMmm.

min. typ. max.

A 2.20 2.40

A1 0.90 1.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

B5 0.30

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e 2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

L1 0.80 1.20

L2 0.80 1.00

V1 10°

DocID023937 Rev 5 15/18

STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data

Figure 24. TO-247 drawing

0075325_G

Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2

16/18 DocID023937 Rev 5

Table 11. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID023937 Rev 5 17/18

STP13N60M2, STU13N60M2, STW13N60M2 Revision history

5 Revision history

Table 12. Document revision history

Date Revision Changes

18-Dec-2012 1 First release.

11-Apr-2013 2

– Added: note 3 in Table 2– Modified: I

D value on Table 2, I

AR, I

AS on Table 4, R

DS(on) on

Table 5– Updated: typical values for Table 6, 7 and 8– Modified: Figure 1

– The part number STD13N60M2 has been moved to a separate

datasheet

– Added: Section 2.1: Electrical characteristics (curves)

17-Apr-2013 3

– Modified: Rthj-case

value on Table 3, trr, q

rr values, and t

rr for

TJ = 150 °C on Table 8

– Minor text changes

28-Jun-2013 4

– Document status promoted from preliminary data to production

data

– Minor text changes

28-Feb-2014 5

– Updated: Figure 22 and Table 9– Minor text changes

STP13N60M2, STU13N60M2, STW13N60M2

18/18 DocID023937 Rev 5

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