N-channel 800 V, 0.19 typ., 19.5 A MDmesh K5 …This is information on a product in full production....

23
This is information on a product in full production. October 2014 DocID023466 Rev 3 1/23 23 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Figure 1. Internal schematic diagram Features Industry’s lowest R DS(on) x area Industry’s best figure of merit (FoM Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. AM01476v1 TO-220 1 2 3 TAB 1 2 3 1 2 3 TO-220FP TO-247 1 3 TAB D 2 PAK Order code V DS @ T Jmax R DS(on) max I D P TOT STB25N80K5 800 V < 0.260 19.5 A 250 W STF25N80K5 40 W STP25N80K5 250 W STW25N80K5 Table 1. Device summary Order code Marking Package Packaging STB25N80K5 25N80K5 D 2 PAK Tape and reel STF25N80K5 TO-220FP Tube STP25N80K5 TO-220 STW25N80K5 TO-247 www.st.com

Transcript of N-channel 800 V, 0.19 typ., 19.5 A MDmesh K5 …This is information on a product in full production....

This is information on a product in full production.

October 2014 DocID023466 Rev 3 1/23

23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• Industry’s lowest RDS(on) x area

• Industry’s best figure of merit (FoM

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

DescriptionThese very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AM01476v1

TO-2201

23

TAB

12

3

12

3

TO-220FP

TO-247

13

TAB

D2PAK

Order codeVDS @ TJmax

RDS(on) max

ID PTOT

STB25N80K5

800 V < 0.260 Ω 19.5 A

250 W

STF25N80K5 40 W

STP25N80K5250 W

STW25N80K5

Table 1. Device summary

Order code Marking Package Packaging

STB25N80K5

25N80K5

D2PAK Tape and reel

STF25N80K5 TO-220FP

TubeSTP25N80K5 TO-220

STW25N80K5 TO-247

www.st.com

Contents STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

2/23 DocID023466 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 STB25N80K5, D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.2 STF25N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.3 STP25N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.4 STW25N80K5, TO-247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

DocID023466 Rev 3 3/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

Value

UnitD2PAK, TO-220, TO-247

TO-220FP

VGS Gate- source voltage ± 30 V

ID Drain current (continuous) at TC = 25 °C 19.5 19.5(1)

1. Limited by package.

A

ID Drain current (continuous) at TC = 100 °C 12.3 12.3 (1) A

IDM (2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 78 78 (1) A

PTOT Total dissipation at TC = 25 °C 250 40 W

IAR

Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax )

6.5 A

EASSingle pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V)

200 mJ

Viso

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t=1 s;TC=25 °C)2500 V

dv/dt (3)

3. ISD ≤ 19.5 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

Peak diode recovery voltage slope 6 V/ns

Tj

Tstg

Operating junction temperatureStorage temperature

-55 to 150 °C

Table 3. Thermal data

Symbol ParameterValue

UnitTO-220 TO-247 D2PAK TO-220FP

Rthj-case Thermal resistance junction-case max 0.5 3.1

°C/WRthj-amb Thermal resistance junction-amb max 62.5 50 62.5

Rthj-pcb(1)

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max 30

Electrical characteristics STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

4/23 DocID023466 Rev 3

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage (VGS= 0)

ID = 1 mA 800 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 800 V 1 µA

VDS = 800 V, Tc=125 °C 50 µA

IGSSGate body leakage current

(VDS = 0)VGS = ± 20 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V

RDS(on)Static drain-source on resistance

VGS = 10 V, ID= 10 A 0.19 0.260 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS =100 V, f=1 MHz, VGS=0

- 1600 - pF

Coss Output capacitance - 130 - pF

CrssReverse transfer capacitance

- 2 - pF

Co(tr)(1)

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Equivalent capacitance time related

VGS = 0, VDS = 0 to 640 V

- 185 - pF

Co(er)(2)

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS

Equivalent capacitance energy related

- 300 - pF

RG Intrinsic gate resistance f = 1 MHz open drain - 4 - Ω

Qg Total gate charge VDD = 640 V, ID = 19.5 A VGS =10 V

(see Figure 19)

- 40 - nC

Qgs Gate-source charge - 10 nC

Qgd Gate-drain charge - 25 nC

DocID023466 Rev 3 5/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 400 V, ID = 10 A, RG=4.7 Ω, VGS=10 V

(see Figure 21)

- 25 - ns

tr Rise time - 13 - ns

td(off) Turn-off delay time - 60 - ns

tf Fall time - 15 - ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 19.5 A

ISDM Source-drain current (pulsed) - 78 A

VSD(1)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage ISD= 19.5 A, VGS=0 - 1.5 V

trr Reverse recovery time ISD= 19.5 A, VDD= 60 Vdi/dt = 100 A/µs,(see Figure 20)

- 515 ns

Qrr Reverse recovery charge - 11 μC

IRRM Reverse recovery current - 43.2 A

trr Reverse recovery time ISD= 19.5 A,VDD= 60 V

di/dt=100 A/µs, Tj=150 °C(see Figure 20)

- 615 ns

Qrr Reverse recovery charge - 13 μC

IRRM Reverse recovery current - 43 A

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)GSOGate-source breakdown voltage

IGS= ± 1 mA, ID=0 30 - - V

Electrical characteristics STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

6/23 DocID023466 Rev 3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK Figure 3. Thermal impedance for D2PAK and TO-220

ID

10

1

0.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(

on)

10ms

1ms

0.1

Tj=150°CTc=25°CSingle pulse

10 μs

1μs

100 μs

AM15722v1

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

ID

1

0.1

0.1 1 100 VDS(V)10

(A)

Operat

ion in

this

area i

s

Limite

d by m

ax R

DS(on)

10ms

1ms

0.01

Tj=150°CTc=25°CSingle pulse

10 μs

100 μs

10

AM15723v1

Figure 6. Safe operating area for TO-220 Figure 7. Normalized BVDSS vs temperature

ID

10

1

0.1 1 100 VDS(V)10

(A)

Opera

tion i

n this

area

is

Limite

d by m

ax R

DS(on

)

10ms

1ms

0.1

Tj=150°CTc=25°CSingle pulse

10 μs100 μs

AM15724v1BVDSS

-100 TJ(°C)

(norm)

-500.8

0.85

0.9

0.95

1

ID=1 mA

0 50

1.05

100 150

1.1

AM15733v1

DocID023466 Rev 3 7/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical characteristics

Figure 8. Safe operating area for TO-247 Figure 9. Thermal impedance for TO-247

ID

10

1

0.1 1 100 VDS(V)10

(A)Ope

ratio

n in t

his ar

ea is

Limite

d by m

ax R

DS(on

)

10ms

1ms

0.1

Tj=150°CTc=25°CSingle pulse

10 μs100 μs

AM15725v1

Figure 10. Output characteristics Figure 11. Transfer characteristics

Figure 12. Static drain-source on-resistance Figure 13. Gate charge vs gate-source voltage

ID

15

10

5

00 10 VDS(V)

(A)

5 15

20

6V

7V

8V

20

409V

10V11V

25

30

35

45

AM15726v1ID

5

04 6 VGS(V)8

(A)

5 7

10

15

VDS=20V

20

25

9 10

30

35

40

45

AM15727v1

RDS(on)

0.15

0.1

0.050 4 8 12 16 ID(A)

(Ω)

20 24 28 32 36 40

0.2

VGS=10V0.25

0.3

AM15734v1 VGS

6

4

2

00 Qg(nC)

(V)

20

8

10

10

300

200

100

0

400

VDS

30 40

500

VDS(V)

12 600

AM15728v1

Electrical characteristics STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

8/23 DocID023466 Rev 3

Figure 14. Capacitance variations Figure 15. Output capacitance stored energy

Figure 16. Normalized on-resistance vs temperature

Figure 17. Source-drain diode forward characteristics

C

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

1000

10000

AM15729v1Eoss

0 VDS(V)

(μJ)

200100 50002468

300 400 600 700

10121416182022

800

AM15730v1

RDS(on)

2

1.5

1

0.5

TJ(°C)

(norm)

0-100 -50 0 50 100 150

2.5

VGS=10VID=10A

AM15731v1VSD

0 10 ISD(A)

(V)

5 15 200.5

0.6

0.7

0.8

TJ=50°C

TJ=150°C

TJ=25°C

0.9

1

AM15732v1

DocID023466 Rev 3 9/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Test circuits

3 Test circuits

Figure 18. Switching times test circuit for resistive load

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load switching and diode recovery times

Figure 21. Unclamped inductive load test circuit

Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Package mechanical data STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

10/23 DocID023466 Rev 3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DocID023466 Rev 3 11/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data

4.1 STB25N80K5, D2PAK

Figure 24. D²PAK (TO-263) drawing

0079457_U

Package mechanical data STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

12/23 DocID023466 Rev 3

Table 9. D²PAK (TO-263) mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

A1 0.03 0.23

b 0.70 0.93

b2 1.14 1.70

c 0.45 0.60

c2 1.23 1.36

D 8.95 9.35

D1 7.50 7.75 8.00

D2 1.10 1.30 1.50

E 10 10.40

E1 8.50 8.70 8.90

E2 6.85 7.05 7.25

e 2.54

e1 4.88 5.28

H 15 15.85

J1 2.49 2.69

L 2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R 0.4

V2 0° 8°

DocID023466 Rev 3 13/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data

Figure 25. D²PAK footprint(a)

a. All dimension are in millimeters

16.90

12.20

9.75

3.50

5.08

1.60

Footprint

Package mechanical data STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

14/23 DocID023466 Rev 3

4.2 STF25N80K5, TO-220FP

Figure 26. TO-220FP drawing

7012510_Rev_K_B

DocID023466 Rev 3 15/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data

Table 10. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Package mechanical data STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

16/23 DocID023466 Rev 3

4.3 STP25N80K5, TO-220

Figure 27. TO-220 type A drawing

DocID023466 Rev 3 17/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data

Table 11. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

Package mechanical data STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

18/23 DocID023466 Rev 3

4.4 STW25N80K5, TO-247

Figure 28. TO-247 drawing

0075325_H

DocID023466 Rev 3 19/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Package mechanical data

Table 12. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

Packaging information STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

20/23 DocID023466 Rev 3

5 Packaging information

Figure 29. Tape

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. onlyincluding draft andradii concentric around B0

AM08852v1

Top covertape

DocID023466 Rev 3 21/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Packaging information

Figure 30. Reel

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base qty 1000

P2 1.9 2.1 Bulk qty 1000

R 50

T 0.25 0.35

W 23.7 24.3

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

Revision history STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

22/23 DocID023466 Rev 3

6 Revision history

Table 14. Document revision history

Date Revision Changes

17-Jul-2012 1 First release.

04-Jun-2013 2

– Modified: IAR, EAS, dv/dt on Table 2, RDS(on) value on Table 4, entire values on Table 5, 6 and 7

– Updated: Section 4: Package mechanical data– Minor text changes– Updated: Table 11 and Figure 27

– Document status promoted from preliminary data to production data

31-Oct-2014 3

Updated title, description and features in cover page.Updated Figure 12: Static drain-source on-resistance.

Updated Section 4.1: STB25N80K5, D2PAK and Section 4.4: STW25N80K5, TO-247

Minor text change

DocID023466 Rev 3 23/23

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

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