Post on 19-Dec-2015
description
1/14February 2003
STP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60Z
N-CHANNEL 600V-0.48-13A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFET
n TYPICAL RDS(on) = 0.48 n EXTREMELY HIGH dv/dt CAPABILITYn 100% AVALANCHE TESTEDn GATE CHARGE MINIMIZEDn VERY LOW INTRINSIC CAPACITANCESn VERY GOOD MANUFACTURINGREPEATIBILITY
DESCRIPTIONThe SuperMESH series is obtained through anextreme optimization of STs well established strip-based PowerMESH layout. In addition to pushingon-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for themost demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh products.
APPLICATIONSn HIGH CURRENT, HIGH SPEED SWITCHINGn IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
n LIGHTING
ORDERING INFORMATION
TYPE VDSS RDS(on) ID Pw
STP13NK60ZSTP13NK60ZFPSTB13NK60ZSTB13NK60Z-1STW13NK60Z
600 V600 V600 V600 V600 V
< 0.55 < 0.55 < 0.55 < 0.55 < 0.55
13 A13 A13 A13 A13 A
150 W35 W150 W150 W150 W
SALES TYPE MARKING PACKAGE PACKAGING
STP13NK60Z P13NK60Z TO-220 TUBE
STP13NK60ZFP P13NK60ZFP TO-220FP TUBE
STB13NK60ZT4 B13NK60Z D2PAK TAPE & REEL
STB13NK60Z B13NK60Z D2PAK TUBE(ONLY UNDER REQUEST)STB13NK60Z-1 B13NK60Z I2PAK TUBE
STW13NK60Z W13NK60Z TO-247 TUBE
TO-220 TO-220FP
1 23
I2PAK
12
3
13
D2PAK
12
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
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ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area(1) ISD 13 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the devicesESD capability, but also to make them safely absorb possible voltage transients that may occasionally beapplied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient andcost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid theusage of external components.
Symbol Parameter Value UnitSTP13NK60Z
STB13NK60Z/-1STW13NK60Z
STP13NK60ZFP
VDS Drain-source Voltage (VGS = 0) 600 VVDGR Drain-gate Voltage (RGS = 20 k) 600 VVGS Gate- source Voltage 30 VID Drain Current (continuous) at TC = 25C 13 13 (*) AID Drain Current (continuous) at TC = 100C 8.2 8.2 (*) A
IDM () Drain Current (pulsed) 52 52 (*) APTOT Total Dissipation at TC = 25C 150 35 W
Derating Factor 1.20 0.27 W/CVESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K) 4000 Vdv/dt (1) Peak Diode Recovery voltage slope 4.5 V/nsVISO Insulation Withstand Voltage (DC) - 2500 VTjTstg
Operating Junction TemperatureStorage Temperature -55 to 150 C
TO-220I2PAKTO-247
D2PAK TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 C/WRthj-pcb Thermal Resistance Junction-pcb Max (#) 60 C/WRthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 C
Symbol Parameter Max Value UnitIAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)10 A
EAS Single Pulse Avalanche Energy(starting Tj = 25 C, ID = IAR, VDD = 50 V)
400 mJ
Symbol Parameter Test Conditions Min. Typ. Max. UnitBVGSO Gate-Source Breakdown
VoltageIgs= 1mA (Open Drain) 30 V
3/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.2. Pulse width limited by safe operating area.3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source
Breakdown VoltageID = 1 mA, VGS = 0 600 V
IDSS Zero Gate VoltageDrain Current (VGS = 0)
VDS = Max RatingVDS = Max Rating, TC = 125 C
150
AA
IGSS Gate-body LeakageCurrent (VDS = 0)
VGS = 20 V 10 A
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 A 3 3.75 4.5 VRDS(on) Static Drain-source On
ResistanceVGS = 10 V, ID = 5 A 0.48 0.55
Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs (1) Forward Transconductance VDS = 8 V, ID = 5 A 11 SCissCossCrss
Input CapacitanceOutput CapacitanceReverse TransferCapacitance
VDS = 25 V, f = 1 MHz, VGS = 0 203021048
pFpFpF
Coss eq. (3) Equivalent OutputCapacitance
VGS = 0V, VDS = 0V to 480 V 125 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)tr
Turn-on Delay TimeRise Time
VDD = 300 V, ID = 5 ARG = 4.7 VGS = 10 V(Resistive Load see, Figure 3)
2214
nsns
QgQgsQgd
Total Gate ChargeGate-Source ChargeGate-Drain Charge
VDD = 480 V, ID = 10 A,VGS = 10 V
661133
92 nCnCnC
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(off)tf
Turn-off Delay TimeFall Time
VDD = 300 V, ID = 5 ARG = 4.7 VGS = 10 V(Resistive Load see, Figure 3)
6112
nsns
tr(Voff)tftc
Off-voltage Rise TimeFall TimeCross-over Time
VDD = 480V, ID = 10 A,RG = 4.7, VGS = 10V(Inductive Load see, Figure 5)
10920
nsnsns
Symbol Parameter Test Conditions Min. Typ. Max. UnitISD
ISDM (2)Source-drain CurrentSource-drain Current (pulsed)
1040
AA
VSD (1) Forward On Voltage ISD = 10 A, VGS = 0 1.6 VtrrQrrIRRM
Reverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 10 A, di/dt = 100 A/sVDD = 35 V, Tj = 150C(see test circuit, Figure 5)
5704.516
nsCA
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
4/14
Thermal Impedance For TO-247Safe Operating Area For TO-247
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
5/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
Capacitance VariationsGate Charge vs Gate-source Voltage
Output Characteristics
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
6/14
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
7/14
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit ForResistive Load
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
8/14
DIM. mm inchMIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181C 1.23 1.32 0.048 0.051D 2.40 2.72 0.094 0.107D1 1.27 0.050 E 0.49 0.70 0.019 0.027F 0.61 0.88 0.024 0.034F1 1.14 1.70 0.044 0.067F2 1.14 1.70 0.044 0.067G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106H2 10.0 10.40 0.393 0.409L2 16.4 0.645 L4 13.0 14.0 0.511 0.551L5 2.65 2.95 0.104 0.116L6 15.25 15.75 0.600 0.620L7 6.2 6.6 0.244 0.260L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
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STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
L2
A
B
D
E
H G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4L5
DIM.mm. inch
MIN. TYP MAX. MIN. TYP. MAX.A 4.4 4.6 0.173 0.181B 2.5 2.7 0.098 0.106D 2.5 2.75 0.098 0.108E 0.45 0.7 0.017 0.027F 0.75 1 0.030 0.039F1 1.15 1.5 0.045 0.067F2 1.15 1.5 0.045 0.067G 4.95 5.2 0.195 0.204G1 2.4 2.7 0.094 0.106H 10 10.4 0.393 0.409L2 16 0.630L3 28.6 30.6 1.126 1.204L4 9.8 10.6 .0385 0.417L5 2.9 3.6 0.114 0.141L6 15.9 16.4 0.626 0.645L7 9 9.3 0.354 0.366 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
10/141
DIM.mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0 8
D2PAK MECHANICAL DATA
3
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STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
DIM.mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
L
L1
B2 B
D
EA
C2
CA1
L2
e
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
12/14
DIM.mm. inch
MIN. TYP MAX. MIN. TYP. MAX.A 4.85 5.15 0.19 0.20D 2.20 2.60 0.08 0.10E 0.40 0.80 0.015 0.03F 1 1.40 0.04 0.05F1 3 0.11F2 2 0.07F3 2 2.40 0.07 0.09F4 3 3.40 0.11 0.13G 10.90 0.43H 15.45 15.75 0.60 0.62L 19.85 20.15 0.78 0.79L1 3.70 4.30 0.14 0.17L2 18.50 0.72L3 14.20 14.80 0.56 0.58L4 34.60 1.36L5 5.50 0.21M 2 3 0.07 0.11V 5 5V2 60 60Dia 3.55 3.65 0.14 0.143
TO-247 MECHANICAL DATA
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STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix T4)*
D2PAK FOOTPRINT
* on sales type
DIM.mm inch
MIN. MAX. MIN. MAX.A 330 12.992B 1.5 0.059C 12.8 13.2 0.504 0.520D 20.2 0795G 24.4 26.4 0.960 1.039N 100 3.937T 30.4 1.197
BASE QTY BULK QTY1000 1000
REEL MECHANICAL DATA
DIM.mm inch
MIN. MAX. MIN. MAX.A0 10.5 10.7 0.413 0.421B0 15.7 15.9 0.618 0.626D 1.5 1.6 0.059 0.063D1 1.59 1.61 0.062 0.063E 1.65 1.85 0.065 0.073F 11.4 11.6 0.449 0.456K0 4.8 5.0 0.189 0.197P0 3.9 4.1 0.153 0.161P1 11.9 12.1 0.468 0.476P2 1.9 2.1 0.075 0.082R 50 1.574T 0.25 0.35 0.0098 0.0137W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
14/14
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