Post on 09-Apr-2018
Rev.3.2 2009-11-30
VDS Tjmax
Ω•
•
•
•
•
•
•
• G
GG FP 2 G-TO220
P-TO220-3-31
12
3
C3 G-TO220 G
G FP SP000216354
TC
TC
tp Tjmax
VDD
Tjmax
VDD
EAR
Tjmax
Gate source voltage static VGS
VGS ± ±Power dissipation, TC = 25°C Ptot
Reverse diode dv/dt dv/dt 15 V/ns7)
Rev.3.2 Page 2 2009-11-30
VDS Tj
RthJC
RthJA
wavesoldering
V(BR)DSS VGS
VGS
µ , V
VDS VGS
Tj
Tj
VGS VDS
VGS
Tj
Tj
Ω
RG
9-11-30Re v.3.2
3
Transconductance gfs VDS≥
Input capacitance Ciss VGS VDS
fOutput capacitance Coss
Reverse transfer capacitance Crss
VGS
VDS
Turn-on delay time td(on) VDD VGS
RG Ω Tj 5°C
Rise time trTurn-off delay time td(off)
Fall time tf
Gate to source charge Qgs VDD
Gate to drain charge Qgd
VDD
VGS
VDD
0J-STD20 and JESD22
EAR f
Coss VDS
Coss VDS
7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
9-11-30Re v.3.2
TC
Inverse diode direct current,
pulsed
ISM
VGS
Reverse recovery time trr VR
diF/dtReverse recovery charge Qrr
Peak reverse recovery current Irrm
Tj
I
09-11-30Rev .3.2
3
TC
TC
Pto
t
Ptot TC
TC
Pto
t
TC
VDS
TC
VDS
10 0 10 1 10 2 10 3 VVDS
-210
-110
010
110
210
A
I D
tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 msDC
9-11-30Re v.3.2
tp
tptp
tp
VDS Tj
VGS
VDS
VDS Tj
VGS
VDS
9-11-30Rev.3.2
f
Tj VGS
Ω
VGS
Tj
Ω
≥
VGS
VGS
VG
S
9-11-30Rev.3.2
3
I F
Tj
VDS VGS RG Ω
RG Tj
VDS VGS
ΩRG
di/dt RG Tj
VDS VGS
ΩRG
di/d
t
09-11-30Rev.3.2
dv/dt RG Tj
VDS VGS
ΩRG
dv/d
t
Tj
VDS VGS RG Ω
P
RG Tj
VDS VGS
ΩRG
P
Tj ≤
9-11-30Rev.3.2
Tj
VDD
Tj
f
EAR
f
V(BR)DSS Tj
Tj
V(B
R)D
SS
VDS
VGS
VDS
9-11-30Rev.3.2
Coss
f VDS
VDS
2009-11-30Rev.3.2 Page 12
SPP20N60C3SPI20N60C3, SPA20N60C3
PG-TO220-3-1, PG-TO220-3-21 : Outline
2009-11-30Rev.3.2 Page 13
SPP20N60C3SPI20N60C3, SPA20N60C3
PG-TO220-3-31/-3-111 Fully isolated package ( 2500 VAC; 1 minute )
2009-11-30Rev.3.2 Page 14
SPP20N60C3SPI20N60C3, SPA20N60C3
PG-TO262-3-1/PG-TO262-3-21 (I²-PAK)
2009-11-30Rev.3.2 Page 14
SPP20N60C3SPI20N60C3, SPA20N60C3