© 1996 IXYS All rights reserved

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 1000 V

VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC = 25°C 50 A

IC90 TC = 90°C 25 A

ICM TC = 25°C, 1 ms 100 A

SSOA VGE= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 50 A(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 VCES

PC TC = 25°C 200 W

TJ -55 ... +150 °CTJM 150 °C

Tstg -55 ... +150 °C

Md Mounting torque (M3) 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering 300 °C1.6 mm (0.062 in.) from case for 10 s

Symbol Test Conditions Characteristic Values(TJ = 25°C, unless otherwise specified)

min. typ. max.

BVCES IC = 3 mA, VGE = 0 V 1000 V

VGE(th) IC = 250 µA, VCE = VGE 2.5 5 V

ICES VCE = 0.8 • VCES TJ = 25°C 250 µAVGE = 0 V TJ = 125°C 1 mA

IGES VCE = 0 V, VGE = ±20 V ±100 nA

VCE(sat) IC = IC90, VGE = 15 V 25N100 3.5 V25N100A 4.0 V

TO-247 AD (IXGH)

GC

E

TO-204 AE (IXGM)

C

G = Gate, C = Collector,E = Emitter, TAB = Collector

VCES IC25 VCE(sat)

Low V CE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V

Featuresl International standard packagesl 2nd generation HDMOSTM processl Low VCE(sat)

- for low on-state conduction lossesl High current handling capabilityl MOS Gate turn-on

- drive simplicityl Voltage rating guaranteed at high

temperature (125°C)

Applicationsl AC motor speed controll DC servo and robot drivesl DC choppersl Uninterruptible power supplies (UPS)l Switch-mode and resonant-mode

power supplies

Advantagesl Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)l High power density

91516E (3/96)

OBSOLETE

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,7154,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 25N100 IXGM 25N100IXGH 25N100A IXGM 25N100A

Symbol Test Conditions Characteristic Values(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs IC = IC90; VCE = 10 V, 8 15 SPulse test, t ≤ 300 µs, duty cycle ≤ 2 %

Cies 2750 pF

Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF

Cres 50 pF

Qg 130 180 nC

Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 25 60 nC

Qgc 55 90 nC

td(on) 100 ns

tri 200 ns

td(off) 500 ns

tfi 25N100A 500 ns

Eoff 25N100A 5 mJ

td(on) 100 ns

tri 250 ns

Eon 3.5 mJ

td(off) 720 1000 ns

tfi 25N100 950 3000 ns25N100A 800 1500 ns

Eoff 25N100 10 mJ25N100A 8 mJ

RthJC 0.62 K/W

RthCK 0.25 K/W

TO-247 AD Outline

TO-204AE Outline

Inductive load, T J = 25°°°°°CIC = IC90, VGE = 15 V, L = 300 µH,VCE = 0.8 VCES, RG = Roff = 33 ΩRemarks: Switching timesmay increasefor VCE (Clamp) > 0.8 • VCES,higher TJ or increased RG

1 = Gate2 = EmitterCase = Collector

1 = Gate2 = Collector3 = EmitterTab = Collector

Inductive load, T J = 125°°°°°C

IC = IC90, VGE = 15 V, L = 300 µH

VCE = 0.8 VCES, RG = Roff = 33 Ω

Remarks: Switching timesmay increasefor VCE (Clamp) > 0.8 • VCES,higher TJ or increased RG

OBSOLETE

© 1996 IXYS All rights reserved

TJ - Degrees C

-50 -25 0 25 50 75 100 125 150

BV

/ V

(th)

- N

orm

aliz

ed

0.6

0.7

0.8

0.9

1.0

1.1

1.2

TJ - Degrees C

-50 -25 0 25 50 75 100 125 150

VC

E(s

at) -

Nor

mal

ized

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

VCE - Volts

0 1 2 3 4 5

I C -

Am

pere

s

0

5

10

15

20

25

30

35

40

45

50VG E= 15V

7V

9V

VGE - Volts

6 7 8 9 10 11 12 13 14 15

VC

E -

Vol

ts

0

1

2

3

4

5

6

7

8

9

10

VGE - Volts

0 1 2 3 4 5 6 7 8 9 10

I C -

Am

pere

s

0

10

20

30

40

50

VCE - Volts

0 2 4 6 8 10 12 14 16 18 20

I C -

Am

pere

s

0

20

40

60

80

100

120

140

160

180

200

9V

7V

11V

13V

TJ = 25°CTJ = 25°C

VGE = 15V

IC = 12.5A

IC = 25A

IC = 50A

IC = 12.5A

IC = 25A

IC = 50A

TJ = - 40°C

TJ = 125°C

TJ = 25°C

VCE = 10V

13V11V

TJ = 25°C

VGE(th)

IC = 250µA

BVCES

IC = 250µA

25N100g1.JNB

Fig. 3 Collector-Emitter Voltage Fig. 4 Temperature Dependencevs. Gate-Emitter Voltage of Output Saturation Voltage

Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage

Fig. 1 Saturation Characteristics Fig. 2 Output Characterstics

IXGH 25N100 IXGM 25N100IXGH 25N100A IXGM 25N100A

OBSOLETE

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,7154,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 25N100 IXGM 25N100IXGH 25N100A IXGM 25N100A

VCE - Volts

0 5 10 15 20 25

Cap

acita

nce

- pF

0

400

800

1200

1600

2000

2400

Cres

Gate Charge - nCoulombs

0 25 50 75 100 125 150

VG

E -

Vol

ts

1

3

5

7

9

11

13

15

VCE - Volts

0 200 400 600 800 1000

I C -

Am

pere

s

0.01

0.1

1

10

100

Pulse Width - Seconds

0.0001 0.001 0.01 0.1 1 10

Zth

jc (

K/W

)

0.01

0.1

1

Single Pulse

D=0.2

D=0.5

D = Duty Cycle

VCE = 800V

IC = 25A

IG = 10mA

TJ = 125°C

dV/dt < 3V/ns

Coes

Cies

f = 1MHz

D=0.1

D=0.05

D=0.02

D=0.01

25N100g2.JNB

Fig.10 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area

OBSOLETE