Max247 long leads

TAB

12

3

12

3

TAB

C(2, TAB)

E(3)NG1E3C2T

G(1)

Features• Maximum junction temperature: TJ = 175 °C• 5 μs of short-circuit withstand time• VCE(sat) = 2.1 V (typ.) @ IC = 75 A• Tight parameter distribution• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast recovery antiparallel diode

Applications• UPS• Solar inverters• Welding• PFC

DescriptionThis device is IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which representan optimum compromise between conduction and switching losses to maximizethe efficiency of high switching frequency converters. Moreover, a slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status link

STGYA75H120DF2

Product summary

Order code STGYA75H120DF2

Marking G75H120DF2

Package Max247 long leads

Packing Tube

Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

STGYA75H120DF2

Datasheet

DS13822 - Rev 2 - October 2021For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

ICContinuous collector current at TC = 25 °C 150 (1)

AContinuous collector current at TC = 100 °C 75

ICP(2) Pulsed collector current 300 A

VGE Gate-emitter voltage ±20 V

IFContinuous forward current at TC = 25 °C 150 (1)

AContinuous forward current at TC = 100 °C 75

IFP(2) Pulsed forward current 300 A

PTOT Total power dissipation at TC = 25 °C 750 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Current level is limited by bond wires.2. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJCThermal resistance, junction-to-case IGBT 0.2

°C/WThermal resistance, junction-to-case diode 0.48

RthJA Thermal resistance, junction-to-ambient 50 °C/W

STGYA75H120DF2Electrical ratings

DS13822 - Rev 2 page 2/15

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 1200 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 75 A 2.1 2.6

VVGE = 15 V, IC = 75 A, TJ = 125 °C 2.4

VGE = 15 V, IC = 75 A, TJ = 175 °C 2.5

VF Forward on-voltage

IF = 75 A 3.8

VIF = 75 A, TJ = 125 °C 2.8

IF = 75 A, TJ = 175 °C 2.6

VGE(th) Gate threshold voltage VCE = VGE, IC = 2 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

- 6300 - pF

Coes Output capacitance - 420 - pF

Cres Reverse transfer capacitance - 146 - pF

Qg Total gate chargeVCC = 960 V, IC = 75 A, VGE = 0 to 15 V

(see Figure 29. Gate charge test circuit)

- 313 - nC

Qge Gate-emitter charge - 50 - nC

Qgc Gate-collector charge - 153 - nC

STGYA75H120DF2Electrical characteristics

DS13822 - Rev 2 page 3/15

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 600 V, IC = 75 A,

VGE = 15 V, RG = 10 Ω

(see Figure 28. Test circuit for inductiveload switching)

61 - ns

tr Current rise time 34 - ns

(di/dt)on Turn-on current slope 1810 - A/µs

td(off) Turn-off delay time 366 - ns

tf Current fall time 40 - ns

Eon(1) Turn-on switching energy 4.3 - mJ

Eoff(2) Turn-off switching energy 3.9 - mJ

Ets Total switching energy 8.2 - mJ

td(on) Turn-on delay time

VCE = 600 V, IC = 75 A,

VGE = 15 V, RG = 10 Ω, TJ = 175 °C

(see Figure 28. Test circuit for inductiveload switching)

55 - ns

tr Current rise time 40 - ns

(di/dt)on Turn-on current slope 1560 - A/µs

td(off) Turn-off delay time 387 - ns

tf Current fall time 128 - ns

Eon(1) Turn-on switching energy 6 - mJ

Eoff(2) Turn-off switching energy 5.2 - mJ

Ets Total switching energy 11.2 - mJ

tsc Short-circuit withstand time VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C 5 - µs

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 75 A, VR = 600 V,

VGE = 15 V, di/dt = 1550A/µs

(see Figure 28. Test circuit for inductiveload switching)

- 356 - ns

Qrr Reverse recovery charge - 2.6 - µC

Irrm Reverse recovery current - 26.9 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 1360 - A/µs

Err Reverse recovery energy - 0.98 - mJ

trr Reverse recovery time

IF = 75 A, VR = 600 V,

VGE = 15 V, di/dt = 1550 A/µs, TJ = 175 °C

(see Figure 28. Test circuit for inductiveload switching)

- 595 - ns

Qrr Reverse recovery charge - 6.9 - µC

Irrm Reverse recovery current - 37 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 505 - A/µs

Err Reverse recovery energy - 2.85 - mJ

STGYA75H120DF2Electrical characteristics

DS13822 - Rev 2 page 4/15

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG130920210946PDT

600

400

200

025 75 125 175

PTOT (W)

TC(°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs case temperature

GADG130920210947CCT

150

100

50

025 75 125 175

IC (A)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

GADG130920210954OC25

250

200

150

100

50

00 2 4 6 8

IC (A)

VCE (V)7 V

9 V

11 V13 V

VGE=15 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG130920210955OC175

250

200

150

100

50

00 2 4 6 8

IC (A)

VCE (V)7 V

11 V13 V

VGE=15 V

9 V

Figure 5. VCE(sat) vs junction temperature

GADG130920211000VCET

3.4

3.0

2.6

2.2

1.8

1.4-50 0 50 100 150

VCE(sat)(V)

TJ (°C)

IC = 150 AVGE=15 V

IC = 75 A

IC = 35 A

Figure 6. VCE(sat) vs collector current

GADG130920211001VCEC

5

4

3

2

1

00 50 100 150 200 250

VCE(sat)(V)

IC (A)

TJ = 175 °C

TJ = -40 °C

TJ = 25 °C

VGE=15 V

STGYA75H120DF2Electrical characteristics (curves)

DS13822 - Rev 2 page 5/15

Figure 7. Collector current vs switching frequency

GADG130920211100CCS

180

150

120

90

60

30

010 0 10 1

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 600 V,RG = 10 Ω, VGE= 0/15 V , Tj = 175 °C

TC= 80 °C

TC= 100 °C

Figure 8. Safe operating area

GADG130920211001FSOA

10 2

10 1

10 010 0 10 1 10 2 10 3

IC (A)

VCE (V)

Single pulse, TC = 25 °C,TJ ≤ 175 °C, VGE = 15 V

tp= 1 µs

tp= 10 µs

tp= 100 µs

tp= 1 ms

Figure 9. Transfer characteristics

GADG130920211004TCH

250

200

150

100

50

04 6 8 10 12

IC (A)

VGE (V)

TJ= 25 °C

TJ= 175 °C

VCE=10 V

Figure 10. Diode VF vs forward current

GADG130920211004DVF

8

6

4

2

00 50 100 150 200 250

VF (V)

IF (A)

TJ = -40 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

VGE(th)

1.1

1.0

0.6-50 TJ(°C)

(norm)

0 50 100 150

IC= 2mAVCE= VGE

0.7

0.8

0.9

GIPG130320141400FSR

Figure 12. Normalized V(BR)CES vs junction temperature

V(BR)CES

0.98

0.94

0.9-50 TJ(°C)

(norm)

0 50 100 150

IC= 2mA

1.06

1.02

GIPG130320141405FSR

STGYA75H120DF2Electrical characteristics (curves)

DS13822 - Rev 2 page 6/15

Figure 13. Capacitance variations

GADG130920211005CVR

10 3

10 2

10 110 -1 10 0 10 1 10 2 10 3

C (pF)

VCE (V)

f = 1 MHz

Cies

Coes

Cres

Figure 14. Gate charge vs gate-emitter voltage

GADG130920211005GCGE

15

12

9

6

3

00 50 100 150 200 250 300

VGE (V)

Qg (nC)

VCC = 960 V, IC = 75 A, IG = 4 mA

Figure 15. Switching energy vs collector current

GADG130920211007SLC

18

15

12

9

6

3

00 30 60 90 120

E (mJ)

IC (A)

Eon

Eoff

VCC = 600 V, RG = 10 Ω, VGE = 15 V, TJ=175

Figure 16. Switching energy vs gate resistance

GADG130920211034SLG

8

7

6

5

4

30 5 10 15 20

E (mJ)

RG (Ω)

Eon

Eoff

VCC = 600 V, VGE = 15 V, IC = 75 A, TJ = 175

Figure 17. Switching energy vs junction temperature

GADG130920211014SLT

6.0

5.5

5.0

4.5

4.0

3.50 50 100 150

E (mJ)

TJ (°C)

VCC = 600 V, RG = 10 Ω, VGE = 15 V, IC= 75 A

Eon

Eoff

Figure 18. Switching energy vs collector emitter voltage

GADG130920211033SLV

12

10

8

6

4

2

0300 400 500 600 700 800 900

E (mJ)

VCE (V)

VGE = 15 V, TJ= 175

Eon

Eoff

, RG = 10 Ω, IC= 75 A

STGYA75H120DF2Electrical characteristics (curves)

DS13822 - Rev 2 page 7/15

Figure 19. Switching times vs collector current

GADG130920211035STC

10 2

10 10 30 60 90 120

t (ns)

IC (A)

td(on)

td(off)

tf

tr

VCC = 600 V, VGE = 15 V, RG = 10 Ω, TJ = 175

Figure 20. Switching times vs gate resistance

GADG130920211036STR

10 2

10 10 5 10 15 20

t (ns)

RG (Ω)

td(off)

tf

tr

VCC = 600 V, VGE = 15 V, IC = 75 A, TJ = 175

td(on)

Figure 21. Reverse recovery current vs diode currentslope

GADG150920211222RRC

40

35

30

25

20

15

100 500 1000 1500 2000

Irrm (A)

di/dt (A/µs)

756

Figure 22. Reverse recovery time vs diode current slope

GADG130920211045RRT

1000

900

800

700

600

5000 500 1000 1500 2000

trr (ns)

di/dt (A/µs)

675

Figure 23. Reverse recovery charge vs diode currentslope

GADG130920211047RRQ

7

6

5

4

30 500 1000 1500 2000

Qrr (µC)

di/dt (A/µs)

675

Figure 24. Reverse recovery energy vs diode currentslope

GADG130920211059RRE

3.0

2.4

1.8

1.2

0.6

0.00 500 1000 1500 2000

Err (mJ)

di/dt (A/µs)

675

STGYA75H120DF2Electrical characteristics (curves)

DS13822 - Rev 2 page 8/15

Figure 25. Thermal impedance for IGBT

MAX247LL_ZthJC

10 -1

10 -210 -5 10 -4 10 -3 10 -2 10 -1

K

t p (s)

JC

Figure 26. Thermal impedance for diode

Zth = k*RthJC

δ = tp/t

ttp

STGYA75H120DF2Electrical characteristics (curves)

DS13822 - Rev 2 page 9/15

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 30. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IF

trr

ts tf

Qrr

IRRM

STGYA75H120DF2Test circuits

DS13822 - Rev 2 page 10/15

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 Max247 long leads package information

Figure 31. Max247 long leads package outline

DM00176969_rev_3

Section C-C, D-D, E-E

Bottom view

Top view

STGYA75H120DF2Package information

DS13822 - Rev 2 page 11/15

Table 7. Max247 long leads package mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

a 0 0.15

a' 0 0.15

b 1.16 1.26

b1 1.15 1.20 1.22

b2 1.96 2.06

b3 1.95 2.00 2.02

b4 2.96 3.06

b5 2.95 3.00 3.02

b6 2.25

b7 3.25

c 0.59 0.66

c1 0.58 0.60 0.62

D 20.90 21.00 21.10

D1 16.25 16.55 16.85

D2 1.05 1.17 1.35

D3 0.58 0.68 0.78

D4 2.90 3.00 3.10

E 15.70 15.80 15.90

E1 13.10 13.26 13.50

E3 1.35 1.45 1.55

E4 1.14 1.24 1.34

e 5.34 5.44 5.54

K 4.25 4.35 4.45

L 19.80 19.92 20.10

L1 3.90 4.30

M 0.70 1.30

P 2.40 2.50 2.60

T 9.80 10.20

U 6.00 6.40

STGYA75H120DF2Max247 long leads package information

DS13822 - Rev 2 page 12/15

Revision history

Table 8. Document revision history

Date Revision Changes

08-Sep-2021 1 First release.

13-Oct-2021 2 Updated Table 3. Static characteristics.

STGYA75H120DF2

DS13822 - Rev 2 page 13/15

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 Max247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

STGYA75H120DF2Contents

DS13822 - Rev 2 page 14/15

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STGYA75H120DF2

DS13822 - Rev 2 page 15/15