TPS763 Low-Power 150-mA Low-Dropout Linear … has enabled the usual pnp pass transistor ... 9...

29
150 -100 100 200 0 100 0 t - Time - μs C O = 4.7 μF ESR = 0.25 Ω T J = 25°C 0 60 40 20 80 100 140 120 160 180 200 I - Output Current - mA O V O - Change in Δ Output Voltage - mV -200 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS763 SLVS181I – DECEMBER 1998 – REVISED DECEMBER 2016 TPS763 Low-Power 150-mA Low-Dropout Linear Regulators 1 1 Features 1150-mA Low-Dropout Regulator Output Voltage: 5 V, 3.8 V, 3.3 V, 3 V, 2.8 V, 2.7 V, 2.5 V, 1.8 V, 1.6 V, and Variable Dropout Voltage, Typically 300 mV at 150 mA Thermal Protection Over Current Limitation Less Than 2-μA Quiescent Current in Shutdown Mode –40°C to 125°C Operating Junction Temperature Range 5-Pin SOT-23 (DBV) Package 2 Applications Electricity Meters Solar Inverters HVAC Systems Servo Drives and Motion Control Sensor Transmitters TPS76350 Load Transient Response 3 Description The TPS763xx family of low-dropout (LDO) voltage regulators offers the benefits of low-dropout voltage, low-power operation, and miniaturized packaging. These regulators feature low dropout voltages and quiescent currents compared to conventional LDO regulators. Offered in a 5-pin, small outline integrated-circuit SOT-23 package, the TPS763xx series devices are ideal for cost-sensitive designs and for applications where board space is at a premium. A combination of new circuit design and process innovation has enabled the usual pnp pass transistor to be replaced by a PMOS pass element. Because the PMOS pass element behaves as a low-value resistor, the dropout voltage is low—typically 300 mV at 150 mA of load current (TPS76333)—and is directly proportional to the load current. Because the PMOS pass element is a voltage-driven device, the quiescent current is low (140 μA maximum) and is stable over the entire range of output load current (0 mA to 150 mA). Intended for use in portable systems such as laptops and cellular phones, the low-dropout voltage feature and low-power operation result in a significant increase in system battery operating life. The TPS763xx also features a logic-enabled sleep mode to shut down the regulator, reducing quiescent current to 1 μA maximum at T J = 25°C.The TPS763xx is offered in 1.6-V ,1.8-V, 2.5-V, 2.7-V, 2.8-V, 3-V, 3.3-V, 3.8-V, and 5-V fixed-voltage versions and in a variable version (programmable over the range of 1.5 V to 6.5 V). Device Information (1) PART NUMBER PACKAGE BODY SIZE (NOM) TPS763xx SOT-23 (5) 2.90 mm × 1.60 mm (1) For all available packages, see the orderable addendum at the end of the data sheet.

Transcript of TPS763 Low-Power 150-mA Low-Dropout Linear … has enabled the usual pnp pass transistor ... 9...

150

−100

100

200

0

100

0

t − Time − µs

CO = 4.7 µF

ESR = 0.25 Ω

TJ = 25°C

0 604020 80 100 140120 160 180 200

I−

Ou

tpu

t C

urr

en

t−

mA

OV

O−

Ch

an

ge

in

Ou

tpu

tV

olt

ag

e−

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−200

Product

Folder

Sample &Buy

Technical

Documents

Tools &

Software

Support &Community

ReferenceDesign

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

TPS763SLVS181I –DECEMBER 1998–REVISED DECEMBER 2016

TPS763 Low-Power 150-mA Low-Dropout Linear Regulators

1

1 Features1• 150-mA Low-Dropout Regulator• Output Voltage: 5 V, 3.8 V, 3.3 V, 3 V, 2.8 V,

2.7 V, 2.5 V, 1.8 V, 1.6 V, and Variable• Dropout Voltage, Typically 300 mV at 150 mA• Thermal Protection• Over Current Limitation• Less Than 2-µA Quiescent Current in Shutdown

Mode• –40°C to 125°C Operating Junction Temperature

Range• 5-Pin SOT-23 (DBV) Package

2 Applications• Electricity Meters• Solar Inverters• HVAC Systems• Servo Drives and Motion Control• Sensor Transmitters

TPS76350 Load Transient Response

3 DescriptionThe TPS763xx family of low-dropout (LDO) voltageregulators offers the benefits of low-dropout voltage,low-power operation, and miniaturized packaging.These regulators feature low dropout voltages andquiescent currents compared to conventional LDOregulators. Offered in a 5-pin, small outlineintegrated-circuit SOT-23 package, the TPS763xxseries devices are ideal for cost-sensitive designsand for applications where board space is at apremium.

A combination of new circuit design and processinnovation has enabled the usual pnp pass transistorto be replaced by a PMOS pass element. Becausethe PMOS pass element behaves as a low-valueresistor, the dropout voltage is low—typically 300 mVat 150 mA of load current (TPS76333)—and isdirectly proportional to the load current. Because thePMOS pass element is a voltage-driven device, thequiescent current is low (140 µA maximum) and isstable over the entire range of output load current(0 mA to 150 mA). Intended for use in portablesystems such as laptops and cellular phones, thelow-dropout voltage feature and low-power operationresult in a significant increase in system batteryoperating life.

The TPS763xx also features a logic-enabled sleepmode to shut down the regulator, reducing quiescentcurrent to 1 µA maximum at TJ = 25°C.TheTPS763xx is offered in 1.6-V ,1.8-V, 2.5-V, 2.7-V,2.8-V, 3-V, 3.3-V, 3.8-V, and 5-V fixed-voltageversions and in a variable version (programmableover the range of 1.5 V to 6.5 V).

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)TPS763xx SOT-23 (5) 2.90 mm × 1.60 mm

(1) For all available packages, see the orderable addendum atthe end of the data sheet.

2

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Table of Contents1 Features .................................................................. 12 Applications ........................................................... 13 Description ............................................................. 14 Revision History..................................................... 25 Pin Configuration and Functions ......................... 36 Specifications......................................................... 37 Absolute Maximum Ratings.................................. 38 ESD Ratings ........................................................... 39 Recommended Operating Conditions ................. 310 Thermal Information.............................................. 411 Electrical Characteristics ..................................... 4

11.1 Typical Characteristics ............................................ 712 Detailed Description ........................................... 11

12.1 Overview ............................................................... 1112.2 Functional Block Diagram ..................................... 1112.3 Feature Description............................................... 11

12.4 Device Functional Modes...................................... 1213 Application and Implementation........................ 13

13.1 Application Information.......................................... 1313.2 Typical Application ................................................ 13

14 Power Supply Recommendations ..................... 1614.1 Power Dissipation and Junction Temperature ...... 16

15 Layout................................................................... 1615.1 Layout Guidelines ................................................. 1615.2 Layout Example .................................................... 16

16 Device and Documentation Support ................. 1716.1 Receiving Notification of Documentation Updates 1716.2 Community Resources.......................................... 1716.3 Trademarks ........................................................... 1716.4 Electrostatic Discharge Caution............................ 1716.5 Glossary ................................................................ 17

17 Mechanical, Packaging, and OrderableInformation ........................................................... 17

4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision H (January 2004) to Revision I Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementationsection, Power Supply Recommendations section, Layout section, Device and Documentation Support section, andMechanical, Packaging, and Orderable Information section .................................................................................................. 1

• Deleted Legacy Applications and Non-Ceramic Capacitor Stability from Applications ......................................................... 1• Added Electricity Meters, Solar Inverters, HVAC Systems, Servo Drives and Motion Control, and Sensor

Transmitters to Applications ................................................................................................................................................... 1• Deleted Dissipation Ratings table........................................................................................................................................... 3• Added Thermal Information table ........................................................................................................................................... 4

3

2

4

51IN

GND

EN

OUT

NC/FB

3

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5 Pin Configuration and Functions

DBV Package5-Pin SOT-23

Top View

Pin FunctionsPIN

I/O DESCRIPTIONNO. NAME1 IN I Input supply voltage2 GND — Ground3 EN I Enable input4 NC/FB —/I No connection (fixed-voltage option only) or feedback voltage (TPS76301 only)5 OUT O Regulated output voltage

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

7 Absolute Maximum Ratingsover operating free-air temperature range (unless otherwise noted) (1)

MIN MAX UNITInput voltage –0.3 10 VVoltage at EN –0.3 VI + 0.3 VVoltage on OUT, FB 7 VPeak output current Internally limitedOperating junction temperature, TJ –40 150 °CStorage temperature, Tstg –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8 ESD RatingsVALUE UNIT

V(ESD) Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000

VCharged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±250

(1) To calculate the minimum input voltage for your maximum output current, use the following equation: VI(min) = VO(max) + VDO(max load)

9 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)

MIN MAX UNITVI Input voltage (1) 2.7 10 VIO Continuous output current 0 150 mATJ Operating junction temperature –40 125 °C

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(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport.

10 Thermal Information

THERMAL METRIC (1)TPS763xx

UNITDBV (SOT-23)5 PINS

RθJA Junction-to-ambient thermal resistance 205.3 °C/WRθJC(top) Junction-to-case (top) thermal resistance 125.1 °C/WRθJB Junction-to-board thermal resistance 34.6 °C/WψJT Junction-to-top characterization parameter 15.2 °C/WψJB Junction-to-board characterization parameter 33.8 °C/WRθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W

11 Electrical Characteristicsover recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 1 mA, EN = IN, and CO = 4.7 µF (unlessotherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VO Output voltage

TPS76301

3.25 V > VI ≥ 2.7 V,2.5 V ≥ VO ≥ 1.5 V,IO = 1 mA to 75 mA, TJ = 25°C

0.98 × VO VO 1.02 × VO

V

3.25 V > VI ≥ 2.7 V,2.5 V ≥ VO ≥ 1.5 V,IO = 1 mA to 75 mA

0.97 × VO VO 1.03 × VO

VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,IO = 1 mA to 100 mA, TJ = 25°C 0.98 × VO VO 1.02 × VO

VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,IO = 1 mA to 100 mA 0.97 × VO VO 1.03 × VO

VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,IO = 1 mA to 150 mA, TJ = 25°C 0.975 × VO VO 1.025 × VO

VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,IO = 1 mA to 150 mA 0.9625 × VO VO 1.0375 × VO

TPS76316

VI = 2.7 V, 1 mA < IO < 75 mA,TJ = 25°C 1.568 1.6 1.632

VI = 2.7 V, 1 mA < IO < 75 mA 1.552 1.6 1.648VI = 3.25 V, 1 mA < IO < 100 mA,TJ = 25°C 1.568 1.6 1.632

VI = 3.25 V, 1 mA < IO < 100 mA 1.552 1.6 1.648VI = 3.25 V, 1 mA < IO < 150 mA,TJ = 25°C 1.56 1.6 1.64

VI = 3.25 V, 1 mA < IO < 150 mA 1.536 1.6 1.664

TPS76318

VI = 2.7 V, 1 mA < IO < 75 mA,TJ = 25°C 1.764 1.8 1.836

VI = 2.7 V, 1 mA < IO < 75 mA 1.746 1.8 1.854VI = 3.25 V, 1 mA < IO < 100 mA,TJ = 25°C 1.764 1.8 1.836

VI = 3.25 V, 1 mA < IO < 100 mA 1.746 1.8 1.854VI = 3.25 V, 1 mA < IO < 150 mA,TJ = 25°C 1.755 1.8 1.845

VI = 3.25 V, 1 mA < IO < 150 mA 1.733 1.8 1.867

O Imax OV (V (V 1))Line Reg. (mV) (% / V) 1000

100

- +

= ´ ´

O ImaxV (V 3.5 V)Line Reg. (mV) (% / V) 1000

100

-

= ´ ´

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Electrical Characteristics (continued)over recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 1 mA, EN = IN, and CO = 4.7 µF (unlessotherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

(1) Minimum IN operating voltage is 2.7 V or VO(typ) + 1 V, whichever is greater.(2) Test conditions includes output voltage VO = 0 V (for variable device FB is shorted to VO), and pulse duration = 10 mS.

(3) If VO < 2.5 V and VImax = 10 V, VImin = 3.5 V:

If VO > 2.5 V and VImax = 10 V, VImin = VO + 1 V:

VOOutput voltage(continued)

TPS76325

IO = 1 mA to 100 mA, TJ = 25°C 2.45 2.5 2.55

V

IO = 1 mA to 100 mA 2.425 2.5 2.575IO = 1 mA to 150 mA, TJ = 25°C 2.438 2.5 2.562IO = 1 mA to 150 mA 2.407 2.5 2.593

TPS76327

IO = 1 mA to 100 mA, TJ = 25°C 2.646 2.7 2.754IO = 1 mA to 100 mA 2.619 2.7 2.781IO = 1 mA to 150 mA, TJ = 25°C 2.632 2.7 2.767IO = 1 mA to 150 mA 2.599 2.7 2.801

TPS76328

IO = 1 mA to 100 mA, TJ = 25°C 2.744 2.8 2.856IO = 1 mA to 100 mA 2.716 2.8 2.884IO = 1 mA to 150 mA, TJ = 25°C 2.73 2.8 2.87IO = 1 mA to 150 mA 2.695 2.8 2.905

TPS76330

IO = 1 mA to 100 mA, TJ = 25°C 2.94 3 3.06IO = 1 mA to 100 mA 2.91 3 3.09IO = 1 mA to 150 mA, TJ = 25°C 2.925 3 3.075IO = 1 mA to 150 mA 2.888 3 3.112

TPS76333

IO = 1 mA to 100 mA, TJ = 25°C 3.234 3.3 3.366IO = 1 mA to 100 mA 3.201 3.3 3.399IO = 1 mA to 150 mA, TJ = 25°C 3.218 3.3 3.382IO = 1 mA to 150 mA 3.177 3.3 3.423

TPS76338

IO = 1 mA to 100 mA, TJ = 25°C 3.724 3.8 3.876IO = 1 mA to 100 mA 3.705 3.8 3.895IO = 1 mA to 150 mA, TJ = 25°C 3.686 3.8 3.914IO = 1 mA to 150 mA 3.667 3.8 3.933

TPS76350

IO = 1 mA to 100 mA, TJ = 25°C 4.875 5 5.125IO = 1 mA to 100 mA 4.825 5 5.175IO = 1 mA to 150 mA, TJ = 25°C 4.75 5 5.15IO = 1 mA to 150 mA 4.8 5 5.2

I(Q)Quiescent current(GND pin current)

IO = 1 mA to 150 mA, TJ = 25°C (1) 85 100µA

IO = 1 mA to 150 mA (2) 140

Standby currentEN < 0.5 V, TJ = 25°C 0.5 1

µAEN < 0.5 V 2

Vn Output noise voltage BW = 300 Hz to 50 kHz, TJ = 25°C, CO = 10 µF (2) 140 µVPSRR Ripple rejection f = 1 kHz, CO = 10 µF, TJ = 25°C (2) 60 dB

Current limit TJ = 25°C (3) 0.5 0.8 1.5 AOutput voltage lineregulation(ΔVO/VO)(3)

VO + 1 V < VI ≤ 10 V, VI ≥ 3.5 V, TJ = 25°C 0.04% 0.07%V

VO + 1 V < VI ≤ 10 V, VI ≥ 3.5 V 0.1%

VIH EN high level input (2) 1.4 2 VVIL EN low level input (2) 0.5 1.2 V

6

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Electrical Characteristics (continued)over recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 1 mA, EN = IN, and CO = 4.7 µF (unlessotherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

II EN input currentEN = 0 V –0.01 –0.5

µAEN = IN –0.01 –0.5

VDO Dropout voltage

TPS76325

IO = 0 mA, TJ = 25°C 0.2

mV

IO = 1 mA, TJ = 25°C 3IO = 50 mA, TJ = 25°C 120 150IO = 50 mA 200IO = 75 mA, TJ = 25°C 180 225IO = 75 mA 300IO = 100 mA, TJ = 25°C 240 300IO = 100 mA 400IO = 150 mA, TJ = 25°C 360 450IO = 150 mA 600

TPS76333

IO = 0 mA, TJ = 25°C 0.2IO = 1 mA, TJ = 25°C 3IO = 50 mA, TJ = 25°C 100 125IO = 50 mA 166IO = 75 mA, TJ = 25°C 150 188IO = 75 mA 250IO = 100 mA, TJ = 25°C 200 250IO = 100 mA 333IO = 150 mA, TJ = 25°C 300 375IO = 150 mA 500

TPS76350

IO = 0 mA, TJ = 25°C 0.2IO = 1 mA, TJ = 25°C 2IO = 50 mA, TJ = 25°C 60 75IO = 50 mA 100IO = 75 mA, TJ = 25°C 90 113IO = 75 mA 150IO = 100 mA, TJ = 25°C 120 150IO = 100 mA 200IO = 150 mA, TJ = 25°C 180 225IO = 150 mA 300

TJ − Junction Temperature − °C

1.74−35 5

1.8

1.78

−15 25 125

1.82

−55 45 65 85 105

IO = 150 mA

IO = 1 mA

−O

utp

ut

Vo

ltag

e−

VV

O

1.75

1.79

1.76

1.81

1.77

VI = 3.5 V

CI = CO = 4.7 µF

TJ − Junction Temperature − °C

5.02

4.98

4.94

4.9−35 5

5.04

5

4.96

4.92

−15 25 125

5.1

−55 45 65

5.06

5.08

85 105

IO = 150 mA

IO = 1 mA

−O

utp

ut

Vo

ltag

e−

VV

O

VI = 6 V

CI = CO = 4.7 µF

IO − Output Current − mA

5

4.97

4.9530 90

4.99

4.98

4.96

60 120 180

5.01

0 150

−O

utp

ut

Vo

ltag

e−

VV

O

VI = 6 V

CI = CO = 4.7 µF

TJ = 25°C

TJ − Junction Temperature − °C

2.49

2.47−35 5

2.5

2.48

−15 25 125

2.53

−55 45 65

2.51

2.52

85 105

IO = 150 mA

IO = 1 mA

−O

utp

ut

Vo

ltag

e−

VV

O

VI = 3.5 V

CI = CO = 4.7 µF

IO − Output Current − mA

2.5

2.485

2.47530 90

2.495

2.49

2.48

60 120 180

2.505

0 150

VI = 3.5 V

CI = CO = 4.7 µF

TJ = 25°C

−O

utp

ut

Vo

ltag

e−

VV

O

IO − Output Current − mA

1.795

1.780

1.77030 90

1.790

1.785

1.775

60 120 180

1.805

0 150

−O

utp

ut

Vo

ltag

e−

VV

O

1.800

VI = 3.5 V

CI = CO = 4.7 µF

TJ = 25°C

7

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11.1 Typical Characteristics

Figure 1. TPS76325 Output Voltagevs Output Current

Figure 2. TPS76318 Output Voltagevs Output Current

Figure 3. TPS76350 Output Voltagevs Output Current

Figure 4. TPS76325 Output Voltagevs Output Current

Figure 5. TPS76318 Output Voltagevs Free-Air Temperature

Figure 6. TPS76350 Output Voltagevs Free-Air Temperature

VO

−C

han

ge in

4

2

3

1

0

−20

20

VI

t − Time − µs

0 604020 80 100 140120 160 180 200

−In

pu

t V

olt

ag

e−

V∆

Ou

tpu

tV

olt

ag

e−

mV

−30

CO = 4.7 µF

ESR = 0.25 Ω

TJ = 25°C

dvdt

1 V10 µs

5

=

10 M1 M100 k10 k1 k100

Rip

ple

Reje

cti

on

−d

B

f − Frequency − Hz

70

60

50

40

30

20

10

0

−1010

CO = 4.7 µF

ESR = 1 Ω

TJ = 25°C

IO = 150 mA

IO = 1 mA

0.10.1 1 1000

10

0.01 10

1

f − Frequency − kHz

100

−O

utp

ut

Imp

ed

an

ce

−Z

CI = CO = 4.7 µF

ESR = 1 Ω

TJ = 25°C

IO = 150 mA

IO = 1 mA

TJ − Junction Temperature − °C

200

0−35 5

300

100

−15 25 125

600

−55 45 65

400

500

VI = EN = 2.7 V

CI = CO = 4.7 µF

85 105

1 mA

−D

rop

ou

tV

olt

ag

e−

mV

VD

O

150 mA

0 mA

TJ − Junction Temperature − °C

100

10−35 5−15 25 125−55 45 65

1000

85 105

Gro

un

d C

urr

en

t−

VI = 6 V

CI = CO = 4.7 µF

IO = 0 mA and 150 mA

f − Frequency − Hz

1k 10k 100k250

CO = 4.7 µF

IO = 1 mA

CO = 4.7 µF

IO = 150 mA

CO = 10 µF

IO = 150 mA

CO = 10 µF

IO = 1 mA

TJ = 25°C

3µV HzÖ

2.5µV HzÖ

2µV HzÖ

1µV HzÖ

0µV HzÖ

1.5µV HzÖ

0.5µV HzÖ

8

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Typical Characteristics (continued)

Figure 7. TPS76350 Ground Currentvs Free-Air Temperature

Figure 8. Output Noise vs Frequency

Figure 9. Output Impedance vs Frequency Figure 10. TPS76325 Dropout Voltagevs Free-Air Temperature

Figure 11. TPS76325 Ripple Rejection vs Frequency Figure 12. TPS76318 Line Transient Response

0.1

0.010 50 100 150 200 250

10

100

IO − Output Current − mA

1

Region of Instability

CS

R−

Co

mp

en

sati

on

Seri

es R

esis

tan

ce

−Ω

Region of Instability

CO = 10 µF

0.1

0.010 0.1 0.2 0.3 0.4 0.5

10

100

Added Ceramic Capacitance − µF

0.6 0.7 0.8 0.9 1

1

Region of Instability

Region of Instability

CS

R−

Co

mp

en

sati

on

Seri

es R

esis

tan

ce

−Ω

I = 150 mACO = 4.7 µFTJ = 25°C

150

−100

100

200

0

100

0

t − Time − µs

CO = 4.7 µF

ESR = 0.25 Ω

TJ = 25°C

0 604020 80 100 140120 160 180 200

I−

Ou

tpu

t C

urr

en

t−

mA

OV

O−

Ch

an

ge

in

Ou

tpu

tV

olt

ag

e−

mV

−200

0.1

0.010 50 100 150 200 250

10

100

IO − Output Current − mA

CS

R−

Co

mp

en

sati

on

Seri

es

Resis

tan

ce

−Ω

1

Region of Instability

CO = 4.7 µFTJ = 25°C

Region of Instability

5

−50

0

−100

7

6

8

t − Time − µs

0 15010050 200 250 350300 400 450 500

VO

−C

han

ge in

VI

−In

pu

t V

olt

ag

e−

V∆

Ou

tpu

tV

olt

ag

e−

mV

50

dvdt

1 V10 µs

CO = 4.7 µF

ESR = 0.25 Ω

TJ = 25°C

=

50

−50

0

−100

100

0

200

t − Time − µs

CO = 4.7 µF

ESR = 0.25 Ω

TJ = 25°C

0 604020 80 100 140120 160 180 200

I−

Ou

tpu

t C

urr

en

t−

mA

OV

O−

Ch

an

ge

in

Ou

tpu

tV

olt

ag

e−

mV

−150

9

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Typical Characteristics (continued)

Figure 13. TPS76318 Load Transient Response Figure 14. TPS76350 Line Transient Response

Figure 15. TPS76350 Load Transient Response Figure 16. Compensation Series Resistance (CSR)vs Output Current

Figure 17. Compensation Series Resistance (CSR)vs Added Ceramic Capacitance

Figure 18. Compensation Series Resistance (CSR)vs Output Current

0.1

0.010 0.1 0.2 0.3 0.4 0.5

10

100

Added Ceramic Capacitance − µF

1

0.6 0.7 0.8 0.9 1

CS

R−

Co

mp

en

sati

on

Seri

es

Resis

tan

ce

−Ω

CO = 10 µF

Region of Instability

Region of Instability

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Typical Characteristics (continued)

Figure 19. Compensation Series Resistance (CSR) vs Added Ceramic Capacitance

TPS76301

OUTIN

FBGND

EN

VREF

TPS76316/ 18/ 25/ 27/ 28/ 30/ 33/ 38/ 50

OUTIN

GND

EN

VREF

Current Limit/

Thermal

Protection

Current Limit/

Thermal

Protection

Copyright © 2016, Texas Instruments Incorporated

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12 Detailed Description

12.1 OverviewThe TPS763xx devices uses a PMOS pass element to dramatically reduce both dropout voltage and supplycurrent over more conventional PNP pass element LDO designs. The PMOS pass element is a voltage-controlled device that, unlike a PNP transistor, does not require increased drive current as output currentincreases. Supply current in the TPS763xx is essentially constant from no-load to maximum load.

Current limiting and thermal protection prevent damage by excessive output current and/or power dissipation.The device switches into a constant-current mode at approximately 1 A; further load reduces the output voltageinstead of increasing the output current. The thermal protection shuts the regulator off if the junction temperaturerises above 165°C. Recovery is automatic when the junction temperature drops approximately 25°C below thehigh temperature trip point. The PMOS pass element includes a back diode that safely conducts reverse currentwhen the input voltage level drops below the output voltage level.

A logic low on the enable input, EN shuts off the output and reduces the supply current to less than 2 µA. ENmust be tied high in applications where the shutdown feature is not used.

12.2 Functional Block Diagram

12.3 Feature Description

12.3.1 Regulator ProtectionThe TPS763xx features internal current limiting and thermal protection. During normal operation, the TPS763xxlimits output current to approximately 800 mA. When current limiting engages, the output voltage scales backlinearly until the overcurrent condition ends. While current limiting is designed to prevent gross device failure,take care not to exceed the power dissipation ratings of the package. If the temperature of the device exceeds165°C, thermal-protection circuitry shuts it down. Once the device has cooled down to below 140°C, regulatoroperation resumes.

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Feature Description (continued)

(1) All table conditions must be met.(2) The device is disabled when any condition is met.

12.3.2 EnableThe enable signal (VEN) is an active-high digital control that enables the LDO when the enable voltage is past therising threshold (VEN ≥ VIH(EN)) and disables the LDO when the enable voltage is below the falling threshold(VEN ≤ VIL(EN)). The exact enable threshold is between VIH(EN) and VIL(EN) because EN is a digital control. Inapplications that do not use the enable control, connect EN to VIN.

12.4 Device Functional ModesTable 1 provides a quick comparison between the regulation and disabled operation.

Table 1. Device Functional Modes Comparison

OPERATING MODEPARAMETER

VIN EN IOUT TJ

Regulation (1) VIN > VOUT(nom) + VDO VEN > VIH(EN) IOUT < ICL TJ < Tsd

Disabled (2) — VEN < VIL(EN) — TJ > Tsd

12.4.1 RegulationThe device regulates the output to the targeted output voltage when all the conditions in Table 1 are met.

12.4.2 DisabledWhen disabled, the pass device is turned off, the internal circuits are shutdown.

VO

VI

OUT

FB

R2GND

EN

IN

≤0.5 V

≥2 V

TPS76301

1 µF

3

1

4

2

R1

5

CSR = 1 Ω

4.7 µF

+

Copyright © 2016, Texas Instruments Incorporated

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13 Application and Implementation

NOTEInformation in the following applications sections is not part of the TI componentspecification, and TI does not warrant its accuracy or completeness. TI’s customers areresponsible for determining suitability of components for their purposes. Customers shouldvalidate and test their design implementation to confirm system functionality.

13.1 Application InformationThe TPS763xx low-dropout (LDO) regulators are part of a family of regulators which have been optimized for usein battery-operated equipment and feature extremely low dropout voltages, low quiescent current (140 µA), andan enable input to reduce supply currents to less than 2 µA when the regulator is turned off.

13.2 Typical Application

Figure 20. Typical Application Circuit

13.2.1 Design RequirementsAlthough not required, TI recommends a 0.047-µF or larger ceramic bypass input capacitor, connected betweenIN and GND and placed close to the TPS763xx, to improve transient response and noise rejection. A higher-value electrolytic input capacitor may be necessary if large, fast-rise-time load transients are anticipated and thedevice is placed several inches from the power source. Follow the programming guidelines from Table 2.

(1) 1% values shown

Table 2. Output Voltage Programming Guide

OUTPUT VOLTAGE (V)DIVIDER RESISTANCE (kΩ) (1)

R1 R22.5 187 1693.3 301 1693.6 348 1694 402 1695 549 169

6.45 750 169

VO

VI

OUT

FB

R2GND

EN

IN

≤0.5 V

≥2 V

TPS76301

1 µF

3

1

4

2

R1

5

CSR = 1 Ω

4.7 µF

+

Copyright © 2016, Texas Instruments Incorporated

O

ref

VR1 1 R2

0.995 V

æ ö= - ´ç ÷

´è ø

O ref

R1V 0.995 V 1

R2

æ ö= ´ ´ +ç ÷

è ø

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13.2.2 Detailed Design Procedure

13.2.2.1 Capacitor SelectionLike all low dropout regulators, the TPS763xx requires an output capacitor connected between OUT and GND tostabilize the internal loop control. The minimum recommended capacitance value is 4.7 µF and the ESR(equivalent series resistance) must be between 0.3 Ω and 10 Ω. Capacitor values 4.7 µF or larger areacceptable, provided the ESR is less than 10 Ω. Solid tantalum electrolytic, aluminum electrolytic, and multilayerceramic capacitors are all suitable, provided they meet the requirements described above. Most of thecommercially available 4.7 µF surface-mount solid tantalum capacitors, including devices from Sprague, Kemet,and Nichico, meet the ESR requirements stated above (see Table 3).

Table 3. Capacitor SelectionPART NO. MFR VALUE MAX ESR SIZE (H × L × W)

T494B475K016AS Kemet 4.7 µF 1.5 Ω 1.9 × 3.5 × 2.8195D106x0016x2T Sprague 10 µF 1.5 Ω 1.3 × 7 × 2.7695D106x003562T Sprague 10 µF 1.3 Ω 2.5 × 7.6 × 2.5TPSC475K035R0600 AVX 4.7 µF 0.6 Ω 2.6 × 6 × 3.2

13.2.2.2 Output Voltage ProgrammingThe output voltage of the TPS76301 adjustable regulator is programmed using an external resistor divider asshown in Figure 21. The output voltage is calculated using Equation 1.

where• Vref = 1.192 V typical (the internal reference voltage)• 0.995 is a constant used to center the load regulator (1%) (1)

Resistors R1 and R2 must be chosen for approximately 7-µA divider current. Lower value resistors can be usedbut offer no inherent advantage and waste more power. Higher values must be avoided as leakage currents atFB increase the output voltage error. TI recommends choosing a design procedure of R2 = 169 kΩ to set thedivider current at 7 µA and then calculate R1 using Equation 2.

(2)

Figure 21. TPS76301 Adjustable LDO Regulator Programming

0.1

0.010 50 100 150 200 250

10

100

IO − Output Current − mA

CS

R−

Co

mp

en

sati

on

Seri

es R

esis

tan

ce

−Ω

1

Region of Instability

CO = 4.7 µFTJ = 25°C

Region of Instability

0.1

0.010 0.1 0.2 0.3 0.4 0.5

10

100

Added Ceramic Capacitance − µF

1

0.6 0.7 0.8 0.9 1

CS

R−

Co

mp

en

sati

on

Seri

es

Resis

tan

ce

−Ω

CO = 10 µF

Region of Instability

Region of Instability

15

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13.2.2.3 Reverse CurrentThe TPS763xx pass element has a built-in back diode that safely conducts reverse currents when the inputvoltage drops below the output voltage (for example, during power down). Current is conducted from the outputto the input and is not internally limited. If extended reverse voltage is anticipated, external limiting might beappropriate.

13.2.3 Application Curves

Figure 22. Compensation Series Resistance (CSR)vs Output Current

Figure 23. Compensation Series Resistance (CSR) vsAdded Ceramic Capacitance

COUT

VOUTVIN

GND PLANE

CIN

Represents via used for application specific connections

1

2

3 4

5

D I O OP (V V ) I= - ´

J AD(max)

JA

T max TP

Rq

-=

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14 Power Supply RecommendationsA 1-µF or larger input capacitor must be used.

14.1 Power Dissipation and Junction TemperatureSpecified regulator operation is assured to a junction temperature of 125°C; the maximum junction temperatureallowable to avoid damaging the device is 150°C. This restriction limits the power dissipation the regulator canhandle in any given application. To ensure the junction temperature is within acceptable limits, calculate themaximum allowable dissipation, PD(max), and the actual dissipation, PD, which must be less than or equal toPD(max).

The maximum-power-dissipation limit is determined using Equation 3.

where• TJmax is the maximum allowable junction temperature• RθJA is the thermal resistance junction-to-ambient for the package, see Thermal Information• TA is the ambient temperature (3)

The regulator dissipation is calculating using Equation 4.(4)

Power dissipation resulting from quiescent current is negligible.

15 Layout

15.1 Layout Guidelines• Place input and output capacitors as close to the device as possible.• Use copper planes for device connections to optimize thermal performance.• Place thermal vias around the device to distribute the heat.

15.2 Layout Example

Figure 24. Layout Example for DBV Package

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16 Device and Documentation Support

16.1 Receiving Notification of Documentation UpdatesTo receive notification of documentation updates, navigate to the device product folder on ti.com. In the upperright corner, click on Alert me to register and receive a weekly digest of any product information that haschanged. For change details, review the revision history included in any revised document.

16.2 Community ResourcesThe following links connect to TI community resources. Linked contents are provided "AS IS" by the respectivecontributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms ofUse.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaborationamong engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and helpsolve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools andcontact information for technical support.

16.3 TrademarksE2E is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.

16.4 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

16.5 GlossarySLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

17 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TPS76301DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PAZI

TPS76301DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PAZI

TPS76301DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PAZI

TPS76301DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PAZI

TPS76316DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBHI

TPS76316DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBHI

TPS76316DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBHI

TPS76316DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBHI

TPS76318DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBAI

TPS76318DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBAI

TPS76318DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBAI

TPS76318DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBAI

TPS76325DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBBI

TPS76325DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBBI

TPS76325DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBBI

TPS76325DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBBI

TPS76327DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBCI

PACKAGE OPTION ADDENDUM

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Addendum-Page 2

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TPS76327DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBCI

TPS76327DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBCI

TPS76328DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBDI

TPS76328DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBDI

TPS76328DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBDI

TPS76328DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBDI

TPS76330DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBII

TPS76330DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBII

TPS76330DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBII

TPS76330DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBII

TPS76333DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBEI

TPS76333DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBEI

TPS76333DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBEI

TPS76333DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 PBEI

TPS76338DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBFI

TPS76338DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBFI

TPS76338DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBFI

TPS76350DBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBGI

PACKAGE OPTION ADDENDUM

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Addendum-Page 3

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TPS76350DBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBGI

TPS76350DBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBGI

TPS76350DBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM PBGI

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

PACKAGE OPTION ADDENDUM

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Addendum-Page 4

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TPS763 :

• Automotive: TPS763-Q1

NOTE: Qualified Version Definitions:

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TPS76301DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76301DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

TPS76301DBVT SOT-23 DBV 5 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

TPS76301DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76316DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76316DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76318DBVR SOT-23 DBV 5 3000 178.0 9.0 3.3 3.2 1.4 4.0 8.0 Q3

TPS76318DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

TPS76318DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76318DBVT SOT-23 DBV 5 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

TPS76325DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76325DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76327DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76327DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76328DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76328DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76330DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76330DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

PACKAGE MATERIALS INFORMATION

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Pack Materials-Page 1

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TPS76333DBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

TPS76333DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76333DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76333DBVT SOT-23 DBV 5 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

TPS76338DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76338DBVT SOT-23 DBV 5 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76350DBVR SOT-23 DBV 5 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

TPS76350DBVT SOT-23 DBV 5 250 178.0 9.0 3.3 3.2 1.4 4.0 8.0 Q3

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TPS76301DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76301DBVR SOT-23 DBV 5 3000 203.0 203.0 35.0

TPS76301DBVT SOT-23 DBV 5 250 203.0 203.0 35.0

TPS76301DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76316DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76316DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76318DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76318DBVR SOT-23 DBV 5 3000 203.0 203.0 35.0

TPS76318DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

PACKAGE MATERIALS INFORMATION

www.ti.com 20-Dec-2017

Pack Materials-Page 2

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TPS76318DBVT SOT-23 DBV 5 250 203.0 203.0 35.0

TPS76325DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76325DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76327DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76327DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76328DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76328DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76330DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76330DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76333DBVR SOT-23 DBV 5 3000 203.0 203.0 35.0

TPS76333DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76333DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76333DBVT SOT-23 DBV 5 250 203.0 203.0 35.0

TPS76338DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76338DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

TPS76350DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0

TPS76350DBVT SOT-23 DBV 5 250 180.0 180.0 18.0

PACKAGE MATERIALS INFORMATION

www.ti.com 20-Dec-2017

Pack Materials-Page 3

www.ti.com

PACKAGE OUTLINE

C

TYP0.220.08

0.25

3.02.6

2X 0.95

1.9

1.45 MAX

TYP0.150.00

5X 0.50.3

TYP0.60.3

TYP80

1.9

A

3.052.75

B1.751.45

(1.1)

SOT-23 - 1.45 mm max heightDBV0005ASMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.2. This drawing is subject to change without notice.3. Refernce JEDEC MO-178.

0.2 C A B

1

34

5

2

INDEX AREAPIN 1

GAGE PLANE

SEATING PLANE

0.1 C

SCALE 4.000

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAXARROUND

0.07 MINARROUND

5X (1.1)

5X (0.6)

(2.6)

(1.9)

2X (0.95)

(R0.05) TYP

4214839/C 04/2017

SOT-23 - 1.45 mm max heightDBV0005ASMALL OUTLINE TRANSISTOR

NOTES: (continued) 4. Publication IPC-7351 may have alternate designs. 5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

SYMM

LAND PATTERN EXAMPLEEXPOSED METAL SHOWN

SCALE:15X

PKG

1

3 4

5

2

SOLDER MASKOPENINGMETAL UNDER

SOLDER MASK

SOLDER MASKDEFINED

EXPOSED METAL

METALSOLDER MASKOPENING

NON SOLDER MASKDEFINED

(PREFERRED)

SOLDER MASK DETAILS

EXPOSED METAL

www.ti.com

EXAMPLE STENCIL DESIGN

(2.6)

(1.9)

2X(0.95)

5X (1.1)

5X (0.6)

(R0.05) TYP

SOT-23 - 1.45 mm max heightDBV0005ASMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 7. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLEBASED ON 0.125 mm THICK STENCIL

SCALE:15X

SYMM

PKG

1

3 4

5

2

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