Triacs BT138B series - RS Components...

Philips Semiconductors Product specification

Triacs BT138B series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacs in a plastic envelope SYMBOL PARAMETER MAX. UNITsuitable for surface mounting, intended foruse in applications requiring high BT138B- 600bidirectional transient and blocking voltage BT138B- 600Fcapability and high thermal cycling BT138B- 600Gperformance. Typical applications include VDRM Repetitive peak off-state 600 Vmotor control, industrial and domestic voltageslighting, heating and static switching. IT(RMS) RMS on-state current 12 A

ITSM Non-repetitive peak on-state 95 Acurrent

PINNING - SOT404 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1

2 main terminal 2

3 gate

mb main terminal 2

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDRM Repetitive peak off-state - 6001 Vvoltages

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 12 AITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to

on-state current surget = 20 ms - 95 At = 16.7 ms - 105 A

I2t I2t for fusing t = 10 ms - 45 A2sdIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µstriggering T2+ G+ - 50 A/µs

T2+ G- - 50 A/µsT2- G- - 50 A/µsT2- G+ - 10 A/µs

IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 ˚CTj Operating junction - 125 ˚C

temperature

1 3

mb

2

T1T2

G

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 15 A/µs.

July 2001 1 Rev 1.400



THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 1.5 K/Wjunction to mounting base half cycle - - 2.0 K/W

Rth j-a Thermal resistance minimum footprint, FR4 board - 55 - K/Wjunction to ambient

STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT138B- ... ...F ...GIGT Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mAT2+ G- - 8 35 25 50 mAT2- G- - 10 35 25 50 mAT2- G+ - 22 70 70 100 mA

IL Latching current VD = 12 V; IGT = 0.1 AT2+ G+ - 7 40 40 60 mAT2+ G- - 20 60 60 90 mAT2- G- - 8 40 40 60 mAT2- G+ - 10 60 60 90 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA

VT On-state voltage IT = 15 A - 1.4 1.65 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - VTj = 125 ˚C

ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mATj = 125 ˚C

DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT138B- ... ...F ...GdVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs

off-state voltage Tj = 125 ˚C; exponentialwaveform; gate opencircuit

dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µscommutating voltage IT(RMS) = 12 A;

dIcom/dt = 5.4 A/ms; gateopen circuit

tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max); - - - 2 - µstime IG = 0.1 A; dIG/dt = 5 A/µs

July 2001 2 Rev 1.400



Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp ≤ 20ms.

Fig.3. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.

Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb ≤ 99˚C.

Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0 5 10 150

5

10

15

20

= 180

120

90

60

30

IT(RMS) / A

Ptot / W Tmb(max) / C

125

117.5

110

102.5

95

1

-50 0 50 100 1500

5

10

15BT138

99 C

Tmb / C

IT(RMS) / A

10us 100us 1ms 10ms 100ms10

100

1000

T / s

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

dI /dt limitT

T2- G+ quadrant

0.01 0.1 1 100

5

10

15

20

25

surge duration / s

IT(RMS) / A

1 10 100 10000

20

40

60

80

100

Number of cycles at 50Hz

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

-50 0 50 100 1500.4

0.6

0.8

1

1.2

1.4

1.6

Tj / C

VGT(Tj)VGT(25 C)

July 2001 3 Rev 1.400



Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.

Fig.12. Typical commutation dV/dt versus junctiontemperature, parameter commutation dIT/dt. The triacshould commutate when the dV/dt is below the valueon the appropriate curve for pre-commutation dIT/dt.

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

T2+ G+T2+ G-T2- G-T2- G+

IGT(Tj)IGT(25 C)

0 0.5 1 1.5 2 2.5 30

10

20

30

40

VT / V

IT / A

Tj = 125 CTj = 25 C

typ max

Vo = 1.175 VRs = 0.0316 Ohms

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IL(Tj)IL(25 C)

0.001

0.01

0.1

1

10

tp / s

Zth j-mb (K/W)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tpP

t

D

bidirectional

unidirectional

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IH(Tj)IH(25C)

0 50 100 1501

10

100

1000

5.49.1

Tj / C

7

dV/dt (V/us)

4.2dIcom/dt =

15 A/ms 12

off-state dV/dt limitBT138...G SERIES

BT138 SERIES

BT138...F SERIES

July 2001 4 Rev 1.400



MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

Fig.13. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

Fig.14. SOT404 : minimum pad sizes for surface mounting.

Notes1. Plastic meets UL94 V0 at 1/8".

11 max

4.5 max1.4 max

10.3 max

0.5

15.4

2.5

0.85 max(x2)

2.54 (x2)

17.5

11.5

9.0

5.08

3.8

2.0

July 2001 5 Rev 1.400



DEFINITIONS

DATA SHEET STATUS

DATA SHEET PRODUCT DEFINITIONSSTATUS2 STATUS3

Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in ordere to improve the design and supply the best possibleproduct

Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.

3 The product status of the device(s) described in this datasheet may have changed since this datasheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

July 2001 6 Rev 1.400

Triacs BT138B series - RS Components...

Documents

Transcript of Triacs BT138B series - RS Components...