Absolute Maximum RatingsParameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 51

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 32.5

IDM Pulsed Drain Current 204

PD @ TC = 25°C Max. Power Dissipation 300 W

Linear Derating Factor 2.4 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy 500 mJ

IAR Avalanche Current 51 A

EAR Repetitive Avalanche Energy 30 mJ

dv/dt Peak Diode Recovery dv/dt 7.3 V/nsTJ Operating Junction -55 to 150

TSTG Storage Temperature Range °C

Pckg. Mounting Surface Temp. 300 (for 5s)Weight 3.3 (Typical) g

Pre-Irradiation

International Rectifier’s RAD-HardTM HEXFET® technology

provides high performance power MOSFETs for spaceapplications. This technology has over a decade of provenperformance and reliability in satellite applications. Thesedevices have been characterized for both Total Dose andSingle Event Effects (SEE). The combination of low Rdsonand low gate charge reduces the power losses in switchingapplications such as DC to DC converters and motor control.These devices retain all of the well established advantagesof MOSFETs such as voltage control, fast switching, ease ofparalleling and temperature stability of electrical parameters.

A

RADIATION HARDENEDPOWER MOSFETSURFACE MOUNT (SMD-2)

www.irf.com 1

Product SummaryPart Number Radiation Level RDS(on) ID QPL Part Number

IRHNA7160 100K Rads (Si) 0.04Ω 51A JANSR2N7432U

IRHNA3160 300K Rads (Si) 0.04Ω 51A JANSF2N7432U

IRHNA4160 500K Rads (Si) 0.04Ω 51A JANSG2N7432U

IRHNA8160 1000K Rads (Si) 0.04Ω 51A JANSH2N7432U

Features: Single Event Effect (SEE) Hardened Low RDS(on)

Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight ESD Class: 3B per MIL-STD-750, Method 1020

For footnotes refer to the last page

IRHNA7160 JANSR2N7432U

100V, N-CHANNELREF: MIL-PRF-19500/664

RAD-Hard™ HEXFET® TECHNOLOGY

SMD - 2

PD-91396F

2 www.irf.com

IRHNA7160, JANSR2N7432U Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS =0 V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mAVoltage

RDS(on) Static Drain-to-Source — — 0.040 VGS = 12V, ID = 32.5A On-State Resistance — — 0.045 Ω VGS = 12V, ID = 51A

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mAgfs Forward Transconductance 16 — — S VDS >= 15V, IDS = 32.5A IDSS Zero Gate Voltage Drain Current — — 25 VDS = 80V,VGS = 0V

— — 250 VDS = 80VVGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20VIGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20VQg Total Gate Charge — — 310 VGS = 12V, ID = 51AQgs Gate-to-Source Charge — — 53 nC VDS = 50VQgd Gate-to-Drain (‘Miller’) Charge — — 110td(on) Turn-On Delay Time — — 35 VDD = 50V, ID = 51A,tr Rise Time — — 150 VGS = 12V, RG = 2.35Ωtd(off) Turn-Off Delay Time — — 150tf Fall Time — — 130LS + LD Total Inductance — 4.0 —

Ciss Input Capacitance — 5300 — VGS = 0V, VDS = 25VCoss Output Capacitance — 1600 — pF f = 1.0MHzCrss Reverse Transfer Capacitance — 350 —

nA

nH

ns

µA

Note: Corresponding Spice and Saber models are available on the International Rectifier Website.

For footnotes refer to the last page

Thermal ResistanceParameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.42RthJPCB Junction-to-PC Board — 1.6 — Solder to a 1” sq. copper clad PC Board°C/W

Source-Drain Diode Ratings and CharacteristicsParameter Min Typ Max Units Test Conditions

IS Continuous Source Current (Body Diode) — — 51ISM Pulse Source Current (Body Diode) — — 204VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 51A, VGS = 0V trr Reverse Recovery Time — — 520 ns Tj = 25°C, IF = 51A, di/dt ≥ 100A/µsQRR Reverse Recovery Charge — — 6.5 µC VDD ≤ 50V

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Measured from center of drainpad to center of source pad

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Pre-Irradiation IRHNA7160, JANSR2N7432U

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.The hardness assurance program at International Rectifier is comprised of two radiation environments.Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Bothpre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Typical Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment forSingle Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Ion LET Energy Range VDS(V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20VCu 28 285 43 100 100 100 80 60Br 36.8 305 39 100 90 70 50 —

0

20

40

60

80

100

120

0 -5 -10 -15 -20 -25

VGS

VD

S Cu

Br

1. Part number IRHNA7160 (JANSR2N7432U)2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter 100K Rads(Si)1 300K-1000KRads(Si)2 Units Test Conditions Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mAVGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mAIGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20VIGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 VIDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS = 80V, VGS = 0VRDS(on) Static Drain-to-Source — 0.045 — 0.062 Ω VGS = 12V, ID = 32.5A

On-State Resistance (TO-3)VSD Diode Forward Voltage — 1.8 — 1.8 V VGS = 0V, IS = 51A

Table 2. Typical Single Event Effect Safe Operating Area

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IRHNA7160, JANSR2N7432U Pre-Irradiation

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTHT = 25 CJ °

TOP

BOTTOM

VGS15V12V10V9.0V8.0V7.0V6.0V5.0V

V , Drain-to-Source Voltage (V)

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

DS

D

5.0V

10

100

1000

1 10 100

20µs PULSE WIDTHT = 150 CJ °

TOP

BOTTOM

VGS15V12V10V9.0V8.0V7.0V6.0V5.0V

V , Drain-to-Source Voltage (V)

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

DS

D5.0V

1

10

100

1000

5 6 7 8 9 10 11 12

V = 50V20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

GS

D

T = 25 CJ °

T = 150 CJ °

-60 -40 -20 0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R

, D

rain

-to-

Sou

rce

On

Res

ista

nce

(Nor

mal

ized

)

J

DS

(on)

°

V =

I =

GS

D

12V

51A

www.irf.com 5

Pre-Irradiation IRHNA7160, JANSR2N7432U

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

1 10 1000

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, C

apac

itanc

e (p

F)

DS

VCCC

====

0V,CCC

f = 1MHz+ C

+ C

C SHORTEDGSiss gs gd , dsrss gdoss ds gd

Ciss

Coss

Crss

0 40 80 120 160 200 240 2800

4

8

12

16

20

Q , Total Gate Charge (nC)

V

, G

ate-

to-S

ourc

e V

olta

ge (

V)

G

GS

FOR TEST CIRCUITSEE FIGURE

I =D

13

51A

V = 20VDS

V = 50VDS

V = 80VDS

1

10

100

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V ,Source-to-Drain Voltage (V)

I

, Rev

erse

Dra

in C

urre

nt (

A)

SD

SD

V = 0 V GS

T = 25 CJ °

T = 150 CJ °

1 10 100 1000

VDS , Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

Tc = 25°CTj = 150°CSingle Pulse

1ms

10ms

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µs

DC

6 www.irf.com

IRHNA7160, JANSR2N7432U Pre-Irradiation

Fig 10a. Switching Time Test Circuit

VDS

90%

10%VGS

td(on) tr td(off) tf

Fig 10b. Switching Time Waveforms

≤ 1 ≤ 0.1 %

+-

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

25 50 75 100 125 1500

10

20

30

40

50

60

T , Case Temperature ( C)

I ,

Dra

in C

urre

nt (

A)

°C

D

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:1. Duty factor D = t / t2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

The

rmal

Res

pons

e(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

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Pre-Irradiation IRHNA7160, JANSR2N7432U

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01Ωtp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20V

25 50 75 100 125 1500

200

400

600

800

1000

1200

Starting T , Junction Temperature( C)

E

, S

ingl

e P

ulse

Ava

lanc

he E

nerg

y (m

J)

J

AS

°

IDTOP

BOTTOM

23A 32A 51A

8 www.irf.com

IRHNA7160, JANSR2N7432U Pre-Irradiation

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 duringirradiation per MIL-STD-750, method 1019, condition A.

Total Dose Irradiation with VDS Bias.80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

Repetitive Rating; Pulse width limited bymaximum junction temperature.

VDD = 25V, starting TJ = 25°C, L= 0.38mHPeak IL = 51A, VGS = 12V

ISD ≤ 51A, di/dt ≤ 410A/µs,VDD ≤ 100V, TJ ≤ 150°C

Case Outline and Dimensions — SMD-2

Footnotes:

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/2014