This is information on a product in full production.

March 2014 DocID023012 Rev 3 1/12

STT6N3LLH6

N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• RDS(on) * Qg industry benchmark• Extremely low on-resistance RDS(on)• High avalanche ruggedness• Low gate drive power losses

Applications• Switching applications

DescriptionThis device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

SOT23-6L

12

365

4

Order code VDSS RDS(on) max ID PTOT

STT6N3LLH6 30 V

0.025 Ω (VGS= 10 V)

6 A 1.6 W0.036 Ω

(VGS= 4.5 V)

Table 1. Device summary

Order code Marking Package Packaging

STT6N3LLH6 STG1 SOT23-6L Tape and reel

www.st.com

http://www.st.com

Contents STT6N3LLH6

2/12 DocID023012 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

DocID023012 Rev 3 3/12

STT6N3LLH6 Electrical ratings

12

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 30 V

VGS Gate-source voltage ± 20 V

ID Drain current (continuous) at Tpcb = 25 °C 6 A

ID Drain current (continuous) at Tpcb = 100 °C 3.75 A

IDM (1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 24 A

PTOT Total dissipation at TC = 25 °C 1.6 W

Derating factor 0.013 W/°C

Tstg Storage temperature -55 to 150 °C

Tj Max. operating junction temperature 150 °C

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-pcb(1)

1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec

Thermal resistance junction-pcb max 78 °C/W

Electrical characteristics STT6N3LLH6

4/12 DocID023012 Rev 3

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown Voltage

ID = 250 μA, VGS= 0 30 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 30 VVDS = 30 V, Tc = 125 °C

110

μAμA

IGSSGate body leakage current(VDS = 0)

VGS = ± 20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 1 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 3 A 0.021 0.025 Ω

VGS = 4.5 V, ID = 3 A 0.032 0.036 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 24 V, f=1 MHz, VGS = 0

- 283 - pF

Coss Output capacitance - 61 - pF

CrssReverse transfer capacitance

- 31 - pF

Qg Total gate charge VDD = 10 V, ID = 6 A

VGS = 4.5 VFigure 14

- 3.6 - nC

Qgs Gate-source charge - 1.5 - nC

Qgd Gate-drain charge - 1.1 - nC

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay timeVDD = 10 V, ID = 3 A, RG = 4.7 Ω, VGS = 4.5 VFigure 13

- 4.8 - ns

tr Rise time - 11.2 - ns

td(off) Turn-off delay time - 9.4 - ns

tf Fall time - 5.4 - ns

DocID023012 Rev 3 5/12

STT6N3LLH6 Electrical characteristics

12

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISDISDM

(1)

1. Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)-

6

24

A

A

VSD(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD =6 A, VGS = 0 - 1.1 V

trr Reverse recovery time ISD = 6 A, di/dt = 100 A/μs,

VDD = 16 V, TJ=150 °CFigure 15

- 10.6 - ns

Qrr Reverse recovery charge - 2.8 - nC

IRRM Reverse recovery current - 0.5 - A

Electrical characteristics STT6N3LLH6

6/12 DocID023012 Rev 3

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

ID

10

1

0.1

0.1 1 VDS(V)10

(A)

Opera

tion in

this ar

ea is

Limited

by ma

x RDS

(on)

100ms

10msTj=150°CTc=25°C

Singlepulse

1s

0.01

100

AM15373v1

10-4 10-210-3 10

-1 10 101 10

2 t (s)p

10-3

10-2

10-1

10

K

0.02

0.05

0.1

0.2

s=0.5

Single pulse

0.01

Zthj-pcb=K*Rthj-pcb,Rthj-pcb=78 C/W

0

AM15363v1

ID

12

8

4

00 1 VDS(V)3

(A)

2

16

20

3V

4VVGS=5, 6, 7, 8, 9, 10V

4

AM15361v1 ID

16

12

4

00 3 VGS(V)

(A)

1

20

8

2

VDS=3 V

4

AM15369v1

VGS

6

4

2

00 2 Qg(nC)

(V)

8

4 6

10

VDD=10V

ID=6A

AM15358v1RDS(on)

15

10

5

02 10 ID(A)

(mΩ)

6

20

25

4 8 12

VGS= 4.5 V

30

35

40

AM15372v1

DocID023012 Rev 3 7/12

STT6N3LLH6 Electrical characteristics

12

Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs temperature

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized V(BR)DSS vs temperature

Figure 12. Source-drain diode forward characteristics

C

100

10 10 VDS(V)

(pF)

20

Ciss

Coss

Crss

10

f= 1 MHz

AM15370v1 RDS(on)

1.2

1

0.4

00-55 -5 TJ(°C)

(norm)

-30 7020 45 95

0.2

0.6

0.8

1.4

1.6

120

ID= 3 A

VGS= 10 V

145

1.8

AM15360v1

VGS(th)

0.6

0.4

0.2

0-55 -5 TJ(°C)

(norm)

-30

0.8

7020 45 95 120

ID =250 µA

145

1

1.2

AM15368v1 V(BR)DSS

-55 -5 TJ(°C)

(norm)

-30 7020 45 950.8

0.85

0.9

0.95

1

1.1

1.15

1.05

ID = 1mA

120

AM15364v1

VSD

0 4 ISD(A)

(V)

2 106 80.2

0.3

0.4

0.5

0.6

0.7

TJ=-55°C

TJ=150°C

TJ=25°C

0.8

0.9

1

AM15365v1

Test circuits STT6N3LLH6

8/12 DocID023012 Rev 3

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID023012 Rev 3 9/12

STT6N3LLH6 Package mechanical data

12

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 19. SOT23-6L package drawing

7049714_K_FU

http://www.st.com

Package mechanical data STT6N3LLH6

10/12 DocID023012 Rev 3

Figure 20. SOT23-6L recommended footprint(a)

Table 8. SOT23-6L package mechanical data

Dim.mm

Min. Typ. Max.

A 1.25

A1 0.00 0.15

A2 1.00 1.10 1.20

b 0.36 0.50

C 0.14 0.20

D 2.826 2.926 3.026

E 1.526 1.626 1.726

e 0.90 0.95 1.00

H 2.60 2.80 3.00

L 0.35 0.45 0.60

θ 0° 8°

a. All dimensions are in millimeters

7049714_K_footprint_FU

DocID023012 Rev 3 11/12

STT6N3LLH6 Revision history

12

5 Revision history

Table 9. Document revision history

Date Revision Changes

11-Oct-2012 1 First release.

24-Oct-2013 2Modified: RDS(on) value on : Features table and in Table 4.Document status promoted from preliminary to production data.

11-Mar-2014 3Updated Section 4: Package mechanical data.Minor text changes

STT6N3LLH6

12/12 DocID023012 Rev 3

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Figure 1. Internal schematic diagramTable 1. Device summary1 Electrical ratingsTable 2. Absolute maximum ratingsTable 3. Thermal resistance

2 Electrical characteristicsTable 4. StaticTable 5. DynamicTable 6. Switching on/off (inductive load)Table 7. Source drain diode2.1 Electrical characteristics (curves)Figure 2. Safe operating areaFigure 3. Thermal impedanceFigure 4. Output characteristicsFigure 5. Transfer characteristicsFigure 6. Gate charge vs gate-source voltageFigure 7. Static drain-source on-resistanceFigure 8. Capacitance variationsFigure 9. Normalized on-resistance vs temperatureFigure 10. Normalized gate threshold voltage vs temperatureFigure 11. Normalized V(BR)DSS vs temperatureFigure 12. Source-drain diode forward characteristics

3 Test circuitsFigure 13. Switching times test circuit for resistive loadFigure 14. Gate charge test circuitFigure 15. Test circuit for inductive load switching and diode recovery timesFigure 16. Unclamped inductive load test circuitFigure 17. Unclamped inductive waveformFigure 18. Switching time waveform

4 Package mechanical dataFigure 19. SOT23-6L package drawingTable 8. SOT23-6L package mechanical dataFigure 20. SOT23-6L recommended footprint

5 Revision historyTable 9. Document revision history