1. CMOS Device Model Objective Hand calculations for analog design Efficiently and accurately simulation CMOS transistor models Large signal model Small signal model Simulation model Noise model

2. Large Signal Model Nonlinear equations for solving dc values ofdevice currents given voltages Level 1: Shichman-Hodges (VT, K, , , , andNSUB) Level 2: with second-order effects (varyingchannel charge, short-channel, weak inversion,varying surface mobility, etc.) Level 3: Semi-empirical short-channel model Level 4: BSIM models. Based on automaticallygenerated parameters from a processcharacterization. Good weak-strong inversiontransition. 3. Transconductance when VDS is small 4. Transconductance when VDS is small 5. Transconductance when VDS is small 6. Effect of changing VDS for a large VGS 7. Effect of changing VDS for a given VGS 8. Effect of changing VDS for a given VGS 9. Effect of changing VDS for various VGSVGS VGS VTCoxW iD = (vGS - VT )2 2L Triode or linear or ohmic or non-saturation: VDS