Surface micromachining

(111) oriented silicon monocrystal

Si3 N4 deposition by CVD

Si3 O2 deposition by CVD

Deposition of photoresistant polymer

Selective etching of Si3 O2

Removal of Si3 N4 and photoresistant polymer

Removal of Si3 O2

Deformation

EXTINT εεε +=0Ø  Temperature induced deformation:

( ) TNSiSiEXT Δ−=43

ααε

Ø  Deformation due to lattice mismatch :

43

43)(

NSi

NSiSiINT a

aa −=ε

Sia

43NSia

Applications

Collimator Undulator