NanoScience Laboratory

Classical and Quantum integrated Silicon

Photonics

Lorenzo Pavesi

University of Trento

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‘Classical’

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Mechanics

𝑭 = 𝑚𝒂

Electromagnetism

𝑖ℏ𝜕 ۧ|Ψ

𝜕𝑡= 𝐻 ۧ|Ψ

𝐻 =ℏ𝜔𝑎𝜔𝑎𝜔+ + 𝑐. 𝑐

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Integrated Silicon Photonics

1 DEVICE

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Integrated Silicon Photonics

1 DEVICE2 CHIP

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Integrated Silicon Photonics

1 DEVICE2 CHIP3 PACKAGE

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SYMPHONY

Integrated Silicon Photonics

1 DEVICE2 CHIP3 PACKAGE4 SYSTEM

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Integrated Silicon Photonics

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1018

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Photonic devices fabricated using Silicon and standard Silicon

processing (Complementary Metal Oxyde Semiconductor

technology)

Mass manufacturability, low cost, high volumes and

state of the art performances

Natural way of merging photonics and electronics on

the same chip

Silicon Photonics

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Years

Microelectronics

Integrated Photonics

A parallel paradigm to success..

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λ1

λ2

λ3

λN

…

λ1

λ2

λ3

λN

…

λ1 λ2 λ3 λN…

Optical fiber

Transport Scenario

MICRO-ELECTRONIC MECHANICAL SYSTEMS (MEMS)

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Motivation

Features:

DIRECTIONLESS: Change the

configurartion of Add/Drop wavelength

channels to/from any direction

COLORLESS: Independence from

transponder wavelength

CONTENTIONLESS: Multiple signals

with the same wavelength can be handled

by the same device

Nodes in Metro networks

Objective: integrated transponder aggregator

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IRIS TPA characteristics• 48 optical channels, with 100 GHz spacing in the C-

band, 4 different directions and 12 add/drop channels

• Density of photonic components (>1k on <30 mm2 chip area) controlled by >2k electronic building blocks.

• lower cost (a few hundred Euro) and overall device volume a factor of 60 smaller (only a few cubic centimetres)

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Silicon Microresonators

Si- nanowires 450𝑛𝑚 × 220𝑛𝑚

Light Input (C-Band)

Drop

Through

𝑛𝑒𝑓𝑓 × 2𝜋𝑅 = 𝑚𝜆𝑚

Resonance condition

Round trip phase / 2p

Drop

Through

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The switching mechanism

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23

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Interleaver

IIR-type filter (MZI + ring)

MMI couplers

2 heaters needed

High channel rejection

Waveguide widening forphase-noise reduction

Simulated yield analysis for fab errors (±10nm in waveguide height and width)

270 µm

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Automatic Optimization

(V1 , V2)

INPUT

BRANCH 1 BRANCH 2

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Optical demultiplexing

INOUT

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DropAdd

In Through

D =drop

in

2

= -det S( )

S12

2

add

drop

æ

èçç

ö

ø÷÷ = K1P1K2P2K1

in

through

æ

èçç

ö

ø÷÷ =

S11 S12

S21 S22

æ

è

çç

ö

ø

÷÷

in

through

æ

èçç

ö

ø÷÷

T =through

in

2

= -S11

S12

2

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Double ring heaters

Independent control of each ring to minimize loss

Consumption in on state: ~ 25mW per ring 1/e response time: ~4µs

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Thermal crosstalk model

Less than 1 degree cross-talk <10GHz shift (small)

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Insertion loss: < 0.04 dB

Total length: 10 m

Crossings1x1 tapered MMI (fully-etched)

Simulated performance

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Monitor photodiodes

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Silicon Photonics Transponder

• > 1K photonic components

• > 2K electronic blocks

• 48 optical channels

• < 30 mm2 area

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IRIS chip architecture

Copper pillars

Si substrate

Ge detectorMicroring

Opt. Fiber

Grating coupler

BOX

Heater

BCD8sP chip

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Electronic control

Matrix (824 heater blocks, 84 photodiode blocks)

Chip in BCD8sP 160 nm technology

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EIC design

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PIC design

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The wafer

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PIC matrix

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EIC chip (3.7 mm x 5.7 mm)

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Coupling EIC to PIC

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Coupling EIC to PIC

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The bonded Chips

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PIC+EIC matrix

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The bonded Chips

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The package

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The board

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Switch

v

v

v

v

Switch 1

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

INPUT

OUTPUT

v

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Switch

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Device lo

sses

Switch

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Device lo

sses

Switch

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Device lo

sses

Switch

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Device lo

sses

Switch

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Device lo

ssesSwitch 2

Switch

Total insertion

loss

–22 dB

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v

v

v

v

v

v

vTunics BT

InGaAsDetector

v

v

v

Interleaver

AWG

AWG

Interleaver

Switch 1

INPUT

OUTPUT

v

Grating losses

Total losses

Switch 2

Switch

⟹

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Optical transmission on a trafic line

Local Port 1 2 3 4 5 6 7 8

ʎ1

ʎ11

ʎ2ʎ4

ʎ12

ʎ5

ʎ7

ʎ3

ʎ9

ʎ1

ʎ11

ʎ2ʎ4

ʎ12

ʎ5

ʎ7

ʎ3

ʎ9

ʎ1

ʎ11

ʎ2ʎ4

ʎ12

ʎ5

ʎ7

ʎ3

ʎ9

ʎ1

ʎ11

ʎ2ʎ4

ʎ12

ʎ5

ʎ7

ʎ3

ʎ9

A

WG

A

WG

INT

A

WG

A

WG

INT

A

WG

A

WG

INT

A

WG

A

WG

INT

IN 1

IN 2

IN 3

IN 4

25 Gbps

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BER test

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‘Quantum’

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The future

is quantum

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Cyber Hacks

20152014

2017

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Random Numbers

Applications of random numbers

Statistical sampling

Computer simulation

Cryptography QKD

: MUST remain SECRET

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Production of QRNG:

Cheap

Compact

CMOS compatible

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Our Idea

LED:Quantum Source of Randomness

Silicon Nanocrystals LED + Silicon SPAD

NanoScience LaboratoryNanoScience Laboratory

Experimental Setup

I/V SourceSPAD

MCS

Si-NC LED

PC

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Acquired Data Statistics

Poisson Distribution

tw

)2ln(

Bin width: 1 sEL ~ 0.69 Mc/sCurrent: 1-2 A

...,,2,1,0!

)( nen

nPn

NanoScience LaboratoryNanoScience Laboratory

Frequency Test

One sample of a recorded sequence:

0 1 1 1 0 0 1 0 1 1 1 0 0 1 1 0 0 1 1 1 1 0 0 0 0 1 0 0 1 0 0 1 1 0 0 0 0 1 0 1 0 ...

Purpose of the test :

Determination of equal probability

of ones and zeroes in a sequence

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Results of randomness evaluation

72

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Frequency Test Result

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Reason of failure

0 2 4 6 8 10 12 14 16 18 20 22

686k

688k

690k

692k

694k

EL

(co

un

ts/s

)

Time (h)

0 2 4 6 8 10 12 14 16 18 20 22

25.0

25.2

25.4

25.6

T (

oC

)

Time (h)

0 2 4 6 8 10 12 14 16 18 20 22

161820222426

Re

lative

Hu

mid

ity (

%)

Time (h)

-0.4

-0.2

0.0

0.2

0.4

EL

Va

ria

tio

n (

%)

-2.0-1.5-1.0-0.50.00.5

T V

aria

tio

n (

%)

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Methodology

Poisson process

Single event detection in every time interval

Uniform distribution of the event throughout the interval

00

10

00

01

ttnTP

)1)(|(

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76SPIE Security+Defence: Quantum Information Science and Technology

Methodology

0 20 40 60 80 100 120 140 160 180 2000

2

4

6

8

10

12

14

g2(

)

Time(ns)

~ 160 ns

1 2 3 ... 30 31 32

1 2 3 ... 30 31 32 33 34 35 ... 62 63 64

1 2 ... 15 16

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Data Acquisition

Si-NC LED

Si Detector

FPGA

E01

...

Randomness&

Robustness Analyses

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Uniformity

0 1 2 3 4 5 6 7 8 9 A B C D E F

0.0620

0.0621

0.0622

0.0623

0.0624

0.0625

0.0626

Experimental values

Theoretical value

Pro

babili

ty

Bin symbol

00

10

FE,...,,,i

n

n(i)P(i)

T

10

0625.016

1idealP(i)

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Randomness00

01

NIST Tests

Binary Bits0 0000 1 0001 ... E 1110 F 1111

Statistical test Proportion P-value Statistical test Proportion P-value

Frequency 0.9892 0.662506 Matching templates 0.9891 0.268110

Block Frequency 0.9916 0.072289 Universal 0.9878 0.334077

Cumulative sums 0.9894 0.677444 Approximateentropy

0.9893 0.076564

Runs 0.9894 0.738917 Random excursions 0.9926 0.155778

Longest run 0.9910 0.067300 Random excursions Variant

0.9880 0.516352

Rank 0.9910 0.322594 Serial 0.9897 0.020945

FFT 0.9870 0.291282 Linear complexity 0.9902 0.025108

Non-matchingtemplates

0.9909 0.581082 All Passed

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Robustness00

11

]3624[ CCT

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.51.525M

1.530M

1.535M

1.540M

1.545M

1.550M

1.555M

T=36 oC

T=34 oC

T=32 oC

T=30 oC

T=28 oC

T=26 oC

EL

(cou

nts

/s)

Time (h)

T=24 oC

0.482

0.484

0.486

0.488

0.490

0.492

0.494

0.496

0.498

0.500

0.502

P(1

)

Mbps rate Counting 5.149.0~

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81SPIE Security+Defence: Quantum Information Science and Technology

Bit-rate01

00

0.5 1.0 1.5 2.0 2.5 3.0 3.50.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

Bit-R

ate

(M

bps)

Counting Rate (Mcounts/s)

24 26 28 30 32 34 361.600

1.605

1.610

1.615

1.620

1.625

1.630

1.635

Bit-R

ate

(M

bps)

Temperature (°C)

Maximum bit-rate:1.68 Mbps

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Evolution

SPAD

SiPMSi-NCs LLED

1 2

Si-NCs LED

3 Si-NCs LLED

Array C:16 SPADs + 4 TDCs

4 Emitter

SPAD

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83SPIE Security+Defence: Quantum Information Science and Technology

A Compact Configuration

SiPMSi-NCs LLED

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Results (Si-Ncs LLED+SiPM)

0 1 2 3 4 5 6 7 8 9 A B C D E F0.0618

0.0620

0.0622

0.0624

0.0626

Pro

bab

ility

Bin symbol

Experimental values

Theoretical value

JPMF00

10

%00062.0~00057.0P

bits7105.1 I00

01 MI

00

11 Min-entropy nibbleperbits9997.3

01

00 Max-bias 510~

1G Symbols

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85SPIE Security+Defence: Quantum Information Science and Technology

Comparison

Property Si-NCs LED+SPAD Si-NCs LLED+SiPM

PDE 45% @830 nm 20% @800 nm

Detection area 0.0254 1

DCR 300 Hz 80 kHz

Current density 0.2-0.4 0.8-1.2

Robustness Robust Robust

Compactness Bulky Compact

Min-entropy 3.999 bits per nibble 3.999 bits per nibble

Bias

MI bits bits

Bit-rate 1.68 Mbps 0.5 Mbps

510 510

-710 710

2mm2mm

2mA/cm 2mA/cm

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Evolution

SPAD

SiPMSi-NCs LLED

1 2

Si-NCs LED

3 Si-NCs LLED

Array C:16 SPADs + 4 TDCs

4 Emitter

SPAD

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Prototype

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Results (Si-NCs LLED+Array C)

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Evolution

SPAD

SiPMSi-NCs LLED

1 2

Si-NCs LED

3 Si-NCs LLED

Array C:16 SPADs + 4 TDCs

4 Emitter

SPAD

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Geometry

Emitter

SPAD

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EL-t & I-t

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30-500µ

-400µ

-300µ

-200µ

-100µ

0I (A

)

Time (h)

7k

8k

9k

10k

11k

EL (

counts

/s)

VSPAD

= 36 V

Vemit

=-17 V

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Symbols Map

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NIST Tests

Statistical test P-value Proportion Result

Frequency 0.424453 988/1000 Success

Block frequency 0.336111 993/1000 Success

Cumulative sums 0.516113 992/1000 Success

Runs 0.933472 993/1000 Success

Longest run 0.686955 991/1000 Success

Rank 0.075719 994/1000 Success

FFT 0.715679 988/1000 Success

Nonoverlapping templates 0.363593 992/1000 Success

Overlapping template 0.009071 989/1000 Success

Universal 0.522100 987/2000 Success

Approximate entropy 0.965083 992/1000 Success

Random excursions 0.083143 604/613 Success

Random excursions variant 0.152493 608/613 Success

Serial 0.164425 995/1000 Success

Linear complexity 0.610070 992/1000 Success

1Gbits

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Bit-Rate

Max bit-rate ~ 100 kbps

3 6 10 40 100 140 180 220 300 10000

20

40

60

80

100

Bit-R

ate

(kbps)

Counting Rate (kcounts/s)

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Evolution of the QRNG

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Take home messages

• Silicon photonics is a mature technology

• Silicon photonics has already moved from laboratories to applications

and markets

• Quantum technologies can take benefit from dense integration,

scalabiity, roboustness and low losses of Silicon Photonics circuits

• Integrated quantum circuits has already reached a high level of

complexity (> 100 components)

• Integrated quantum silicon photonics is now moving to the market

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References

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acknowledgments

http://nanolab.physics.unitn.it/

+ Zahra Bisadi, Nicola Massari, Fabio Acerbi ….

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acknowledgments

http://nanolab.physics.unitn.it/

www.quantumtrento.eu

SYMPHONY

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http://event.unitn.it/nlp2019