Classical and Quantum integrated Silicon Photonics 2018.pdf · Mass manufacturability, low cost,...
Transcript of Classical and Quantum integrated Silicon Photonics 2018.pdf · Mass manufacturability, low cost,...
NanoScience Laboratory
Classical and Quantum integrated Silicon
Photonics
Lorenzo Pavesi
University of Trento
NanoScience Laboratory
‘Classical’
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Mechanics
𝑭 = 𝑚𝒂
Electromagnetism
𝑖ℏ𝜕 ۧ|Ψ
𝜕𝑡= 𝐻 ۧ|Ψ
𝐻 =ℏ𝜔𝑎𝜔𝑎𝜔+ + 𝑐. 𝑐
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Integrated Silicon Photonics
1 DEVICE
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Integrated Silicon Photonics
1 DEVICE2 CHIP
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Integrated Silicon Photonics
1 DEVICE2 CHIP3 PACKAGE
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SYMPHONY
Integrated Silicon Photonics
1 DEVICE2 CHIP3 PACKAGE4 SYSTEM
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Integrated Silicon Photonics
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1018
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Photonic devices fabricated using Silicon and standard Silicon
processing (Complementary Metal Oxyde Semiconductor
technology)
Mass manufacturability, low cost, high volumes and
state of the art performances
Natural way of merging photonics and electronics on
the same chip
Silicon Photonics
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Years
Microelectronics
Integrated Photonics
A parallel paradigm to success..
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λ1
λ2
λ3
λN
…
λ1
λ2
λ3
λN
…
λ1 λ2 λ3 λN…
Optical fiber
Transport Scenario
MICRO-ELECTRONIC MECHANICAL SYSTEMS (MEMS)
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Motivation
Features:
DIRECTIONLESS: Change the
configurartion of Add/Drop wavelength
channels to/from any direction
COLORLESS: Independence from
transponder wavelength
CONTENTIONLESS: Multiple signals
with the same wavelength can be handled
by the same device
Nodes in Metro networks
Objective: integrated transponder aggregator
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IRIS TPA characteristics• 48 optical channels, with 100 GHz spacing in the C-
band, 4 different directions and 12 add/drop channels
• Density of photonic components (>1k on <30 mm2 chip area) controlled by >2k electronic building blocks.
• lower cost (a few hundred Euro) and overall device volume a factor of 60 smaller (only a few cubic centimetres)
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Silicon Microresonators
Si- nanowires 450𝑛𝑚 × 220𝑛𝑚
Light Input (C-Band)
Drop
Through
𝑛𝑒𝑓𝑓 × 2𝜋𝑅 = 𝑚𝜆𝑚
Resonance condition
Round trip phase / 2p
Drop
Through
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The switching mechanism
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23
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Interleaver
IIR-type filter (MZI + ring)
MMI couplers
2 heaters needed
High channel rejection
Waveguide widening forphase-noise reduction
Simulated yield analysis for fab errors (±10nm in waveguide height and width)
270 µm
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Automatic Optimization
(V1 , V2)
INPUT
BRANCH 1 BRANCH 2
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Optical demultiplexing
INOUT
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DropAdd
In Through
D =drop
in
2
= -det S( )
S12
2
add
drop
æ
èçç
ö
ø÷÷ = K1P1K2P2K1
in
through
æ
èçç
ö
ø÷÷ =
S11 S12
S21 S22
æ
è
çç
ö
ø
÷÷
in
through
æ
èçç
ö
ø÷÷
T =through
in
2
= -S11
S12
2
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Double ring heaters
Independent control of each ring to minimize loss
Consumption in on state: ~ 25mW per ring 1/e response time: ~4µs
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Thermal crosstalk model
Less than 1 degree cross-talk <10GHz shift (small)
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Insertion loss: < 0.04 dB
Total length: 10 m
Crossings1x1 tapered MMI (fully-etched)
Simulated performance
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Monitor photodiodes
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Silicon Photonics Transponder
• > 1K photonic components
• > 2K electronic blocks
• 48 optical channels
• < 30 mm2 area
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IRIS chip architecture
Copper pillars
Si substrate
Ge detectorMicroring
Opt. Fiber
Grating coupler
BOX
Heater
BCD8sP chip
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Electronic control
Matrix (824 heater blocks, 84 photodiode blocks)
Chip in BCD8sP 160 nm technology
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EIC design
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PIC design
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The wafer
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PIC matrix
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EIC chip (3.7 mm x 5.7 mm)
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Coupling EIC to PIC
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Coupling EIC to PIC
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The bonded Chips
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PIC+EIC matrix
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The bonded Chips
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The package
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The board
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Switch
v
v
v
v
Switch 1
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
INPUT
OUTPUT
v
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Switch
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Device lo
sses
Switch
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Device lo
sses
Switch
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Device lo
sses
Switch
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Device lo
sses
Switch
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Device lo
ssesSwitch 2
Switch
Total insertion
loss
–22 dB
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v
v
v
v
v
v
vTunics BT
InGaAsDetector
v
v
v
Interleaver
AWG
AWG
Interleaver
Switch 1
INPUT
OUTPUT
v
Grating losses
Total losses
Switch 2
Switch
⟹
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Optical transmission on a trafic line
Local Port 1 2 3 4 5 6 7 8
ʎ1
ʎ11
ʎ2ʎ4
ʎ12
ʎ5
ʎ7
ʎ3
ʎ9
ʎ1
ʎ11
ʎ2ʎ4
ʎ12
ʎ5
ʎ7
ʎ3
ʎ9
ʎ1
ʎ11
ʎ2ʎ4
ʎ12
ʎ5
ʎ7
ʎ3
ʎ9
ʎ1
ʎ11
ʎ2ʎ4
ʎ12
ʎ5
ʎ7
ʎ3
ʎ9
A
WG
A
WG
INT
A
WG
A
WG
INT
A
WG
A
WG
INT
A
WG
A
WG
INT
IN 1
IN 2
IN 3
IN 4
25 Gbps
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BER test
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‘Quantum’
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The future
is quantum
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Cyber Hacks
20152014
2017
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Random Numbers
Applications of random numbers
Statistical sampling
Computer simulation
Cryptography QKD
: MUST remain SECRET
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Production of QRNG:
Cheap
Compact
CMOS compatible
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Our Idea
LED:Quantum Source of Randomness
Silicon Nanocrystals LED + Silicon SPAD
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Experimental Setup
I/V SourceSPAD
MCS
Si-NC LED
PC
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Acquired Data Statistics
Poisson Distribution
tw
)2ln(
Bin width: 1 sEL ~ 0.69 Mc/sCurrent: 1-2 A
...,,2,1,0!
)( nen
nPn
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Frequency Test
One sample of a recorded sequence:
0 1 1 1 0 0 1 0 1 1 1 0 0 1 1 0 0 1 1 1 1 0 0 0 0 1 0 0 1 0 0 1 1 0 0 0 0 1 0 1 0 ...
Purpose of the test :
Determination of equal probability
of ones and zeroes in a sequence
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Results of randomness evaluation
72
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Frequency Test Result
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Reason of failure
0 2 4 6 8 10 12 14 16 18 20 22
686k
688k
690k
692k
694k
EL
(co
un
ts/s
)
Time (h)
0 2 4 6 8 10 12 14 16 18 20 22
25.0
25.2
25.4
25.6
T (
oC
)
Time (h)
0 2 4 6 8 10 12 14 16 18 20 22
161820222426
Re
lative
Hu
mid
ity (
%)
Time (h)
-0.4
-0.2
0.0
0.2
0.4
EL
Va
ria
tio
n (
%)
-2.0-1.5-1.0-0.50.00.5
T V
aria
tio
n (
%)
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Methodology
Poisson process
Single event detection in every time interval
Uniform distribution of the event throughout the interval
00
10
00
01
ttnTP
)1)(|(
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76SPIE Security+Defence: Quantum Information Science and Technology
Methodology
0 20 40 60 80 100 120 140 160 180 2000
2
4
6
8
10
12
14
g2(
)
Time(ns)
~ 160 ns
1 2 3 ... 30 31 32
1 2 3 ... 30 31 32 33 34 35 ... 62 63 64
1 2 ... 15 16
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Data Acquisition
Si-NC LED
Si Detector
FPGA
E01
...
Randomness&
Robustness Analyses
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Uniformity
0 1 2 3 4 5 6 7 8 9 A B C D E F
0.0620
0.0621
0.0622
0.0623
0.0624
0.0625
0.0626
Experimental values
Theoretical value
Pro
babili
ty
Bin symbol
00
10
FE,...,,,i
n
n(i)P(i)
T
10
0625.016
1idealP(i)
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Randomness00
01
NIST Tests
Binary Bits0 0000 1 0001 ... E 1110 F 1111
Statistical test Proportion P-value Statistical test Proportion P-value
Frequency 0.9892 0.662506 Matching templates 0.9891 0.268110
Block Frequency 0.9916 0.072289 Universal 0.9878 0.334077
Cumulative sums 0.9894 0.677444 Approximateentropy
0.9893 0.076564
Runs 0.9894 0.738917 Random excursions 0.9926 0.155778
Longest run 0.9910 0.067300 Random excursions Variant
0.9880 0.516352
Rank 0.9910 0.322594 Serial 0.9897 0.020945
FFT 0.9870 0.291282 Linear complexity 0.9902 0.025108
Non-matchingtemplates
0.9909 0.581082 All Passed
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Robustness00
11
]3624[ CCT
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.51.525M
1.530M
1.535M
1.540M
1.545M
1.550M
1.555M
T=36 oC
T=34 oC
T=32 oC
T=30 oC
T=28 oC
T=26 oC
EL
(cou
nts
/s)
Time (h)
T=24 oC
0.482
0.484
0.486
0.488
0.490
0.492
0.494
0.496
0.498
0.500
0.502
P(1
)
Mbps rate Counting 5.149.0~
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81SPIE Security+Defence: Quantum Information Science and Technology
Bit-rate01
00
0.5 1.0 1.5 2.0 2.5 3.0 3.50.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Bit-R
ate
(M
bps)
Counting Rate (Mcounts/s)
24 26 28 30 32 34 361.600
1.605
1.610
1.615
1.620
1.625
1.630
1.635
Bit-R
ate
(M
bps)
Temperature (°C)
Maximum bit-rate:1.68 Mbps
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Evolution
SPAD
SiPMSi-NCs LLED
1 2
Si-NCs LED
3 Si-NCs LLED
Array C:16 SPADs + 4 TDCs
4 Emitter
SPAD
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83SPIE Security+Defence: Quantum Information Science and Technology
A Compact Configuration
SiPMSi-NCs LLED
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Results (Si-Ncs LLED+SiPM)
0 1 2 3 4 5 6 7 8 9 A B C D E F0.0618
0.0620
0.0622
0.0624
0.0626
Pro
bab
ility
Bin symbol
Experimental values
Theoretical value
JPMF00
10
%00062.0~00057.0P
bits7105.1 I00
01 MI
00
11 Min-entropy nibbleperbits9997.3
01
00 Max-bias 510~
1G Symbols
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85SPIE Security+Defence: Quantum Information Science and Technology
Comparison
Property Si-NCs LED+SPAD Si-NCs LLED+SiPM
PDE 45% @830 nm 20% @800 nm
Detection area 0.0254 1
DCR 300 Hz 80 kHz
Current density 0.2-0.4 0.8-1.2
Robustness Robust Robust
Compactness Bulky Compact
Min-entropy 3.999 bits per nibble 3.999 bits per nibble
Bias
MI bits bits
Bit-rate 1.68 Mbps 0.5 Mbps
510 510
-710 710
2mm2mm
2mA/cm 2mA/cm
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Evolution
SPAD
SiPMSi-NCs LLED
1 2
Si-NCs LED
3 Si-NCs LLED
Array C:16 SPADs + 4 TDCs
4 Emitter
SPAD
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Prototype
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Results (Si-NCs LLED+Array C)
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Evolution
SPAD
SiPMSi-NCs LLED
1 2
Si-NCs LED
3 Si-NCs LLED
Array C:16 SPADs + 4 TDCs
4 Emitter
SPAD
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Geometry
Emitter
SPAD
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EL-t & I-t
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30-500µ
-400µ
-300µ
-200µ
-100µ
0I (A
)
Time (h)
7k
8k
9k
10k
11k
EL (
counts
/s)
VSPAD
= 36 V
Vemit
=-17 V
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Symbols Map
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NIST Tests
Statistical test P-value Proportion Result
Frequency 0.424453 988/1000 Success
Block frequency 0.336111 993/1000 Success
Cumulative sums 0.516113 992/1000 Success
Runs 0.933472 993/1000 Success
Longest run 0.686955 991/1000 Success
Rank 0.075719 994/1000 Success
FFT 0.715679 988/1000 Success
Nonoverlapping templates 0.363593 992/1000 Success
Overlapping template 0.009071 989/1000 Success
Universal 0.522100 987/2000 Success
Approximate entropy 0.965083 992/1000 Success
Random excursions 0.083143 604/613 Success
Random excursions variant 0.152493 608/613 Success
Serial 0.164425 995/1000 Success
Linear complexity 0.610070 992/1000 Success
1Gbits
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Bit-Rate
Max bit-rate ~ 100 kbps
3 6 10 40 100 140 180 220 300 10000
20
40
60
80
100
Bit-R
ate
(kbps)
Counting Rate (kcounts/s)
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Evolution of the QRNG
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Take home messages
• Silicon photonics is a mature technology
• Silicon photonics has already moved from laboratories to applications
and markets
• Quantum technologies can take benefit from dense integration,
scalabiity, roboustness and low losses of Silicon Photonics circuits
• Integrated quantum circuits has already reached a high level of
complexity (> 100 components)
• Integrated quantum silicon photonics is now moving to the market
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References
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acknowledgments
http://nanolab.physics.unitn.it/
+ Zahra Bisadi, Nicola Massari, Fabio Acerbi ….
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acknowledgments
http://nanolab.physics.unitn.it/
www.quantumtrento.eu
SYMPHONY
NanoScience Laboratory
http://event.unitn.it/nlp2019