P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FETISSUE 2 – MARCH 94

FEATURES* 60 Volt VDS* RDS(on)=5Ω

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage VDS -60 V

Continuous Drain Current at Tamb=25°C ID -280 mA

Pulsed Drain Current IDM -4 A

Gate Source Voltage VGS ± 20 V

Power Dissipation at Tamb=25°C Ptot 700 mW

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source BreakdownVoltage

BVDSS -60 V ID=-1mA, VGS=0V

Gate-Source ThresholdVoltage

VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS

Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V

Zero Gate Voltage DrainCurrent

IDSS -0.5-100

µAµA

VDS=-60 V, VGS=0VDS=-48 V, VGS=0V, T=125°C(2)

On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V

Static Drain-Source On-StateResistance (1)

RDS(on) 5 Ω VGS=-10V,ID=-500mA

Forward Transconductance(1)(2)

gfs 150 mS VDS=-18V,ID=-500mA

Input Capacitance (2) Ciss 100 pF

Common Source OutputCapacitance (2)

Coss 60 pF VDS=-18V, VGS=0V, f=1MHz

Reverse TransferCapacitance (2)

Crss 20 pF

Turn-On Delay Time (2)(3) td(on) 7 ns

VDD ≈-18V, ID=-500mARise Time (2)(3) tr 15 ns

Turn-Off Delay Time (2)(3) td(off) 12 ns

Fall Time (2)(3) tf 15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test.

(3)

Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

E-Line

TO92 Compatible

ZVP2106A

3-417

D G S

TYPICAL CHARACTERISTICS

Output Characteristics

VDS - Drain Source Voltage (Volts)

ID(O

n) -O

n-S

tate

Dra

in C

urre

nt (

Am

ps)

Transfer Characteristics

Normalised R DS(on) and VGS(th) vs Temperature

Nor

mal

ised

RD

S(o

n)an

d V

GS

(th

)

-40 -20 0 20 40 60 80 120100 140 160

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drain

-Sourc

e Resis

tance

RDS(o

n)

Gate Threshold Voltage VGS(th)

ID=-0.5A

0 -2 -4 -6 -8 -100 -10 -20 -30 -40 -50

Saturation Characteristics

VD

S- D

rain

Sou

rce

Vo

ltag

e (V

olt

s)

Voltage Saturation Characteristics

VGS-Gate Source Voltage (Volts)

-10V

ID(O

n)-O

n-S

tate

Dra

in C

urre

nt (

Am

ps)

VGS-Gate Source Voltage (Volts)

VGS=-10V

ID=-1mAVGS=VDS

-3.5

-3.0

-2.0

-0.5

0

-1.0

-2.5

-1.5

2.6

180

VGS=

-20V-14V

-5V

-6V

-7V

-4V-3.5V

-8V

VGS=-18V

ID(O

n) -O

n-S

tate

Dra

in C

urre

nt (

Am

ps)

VDS - Drain Source Voltage (Volts)

On-resistance v drain current

ID-Drain Current (Amps)

RD

S(O

N) -D

rain

So

urc

e R

esis

tan

ce (Ω

)

-0.1 -1.0

10

5

-2.0

-12V

-6V

-4V

0 -2 -4 -6 -8 -10

1

-10V-9V

-8V-7V

-5V

-9V

0

-0.6

-0.4

-0.2

-0.8

-1.6

-1.4-1.2

-1.0

-1.8

-2.0

0

-10

-6

-2

-4

-8

0 -2 -4 -6 -8 -10

ID=

-1A

-0.5A

-0.25A

-0.8

-0.6

-0.2

-0.4

VDS=-10V

-1.6

-1.4

-1.0

-1.2

-6V -7V VGS=-5V -8V -10V -9V

Tj-Junction Temperature (°C)

ZVP2106A

3-418

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FETISSUE 2 – MARCH 94

FEATURES* 60 Volt VDS* RDS(on)=5Ω

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage VDS -60 V

Continuous Drain Current at Tamb=25°C ID -280 mA

Pulsed Drain Current IDM -4 A

Gate Source Voltage VGS ± 20 V

Power Dissipation at Tamb=25°C Ptot 700 mW

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source BreakdownVoltage

BVDSS -60 V ID=-1mA, VGS=0V

Gate-Source ThresholdVoltage

VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS

Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V

Zero Gate Voltage DrainCurrent

IDSS -0.5-100

µAµA

VDS=-60 V, VGS=0VDS=-48 V, VGS=0V, T=125°C(2)

On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V

Static Drain-Source On-StateResistance (1)

RDS(on) 5 Ω VGS=-10V,ID=-500mA

Forward Transconductance(1)(2)

gfs 150 mS VDS=-18V,ID=-500mA

Input Capacitance (2) Ciss 100 pF

Common Source OutputCapacitance (2)

Coss 60 pF VDS=-18V, VGS=0V, f=1MHz

Reverse TransferCapacitance (2)

Crss 20 pF

Turn-On Delay Time (2)(3) td(on) 7 ns

VDD ≈-18V, ID=-500mARise Time (2)(3) tr 15 ns

Turn-Off Delay Time (2)(3) td(off) 12 ns

Fall Time (2)(3) tf 15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test.

(3)

Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

E-Line

TO92 Compatible

ZVP2106A

3-417

D G S

TYPICAL CHARACTERISTICS

Output Characteristics

VDS - Drain Source Voltage (Volts)

ID(O

n) -O

n-S

tate

Dra

in C

urre

nt (

Am

ps)

Transfer Characteristics

Normalised R DS(on) and VGS(th) vs Temperature

Nor

mal

ised

RD

S(o

n)an

d V

GS

(th

)

-40 -20 0 20 40 60 80 120100 140 160

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drain

-Sourc

e Resis

tance

RDS(o

n)

Gate Threshold Voltage VGS(th)

ID=-0.5A

0 -2 -4 -6 -8 -100 -10 -20 -30 -40 -50

Saturation Characteristics

VD

S- D

rain

Sou

rce

Vo

ltag

e (V

olt

s)

Voltage Saturation Characteristics

VGS-Gate Source Voltage (Volts)

-10V

ID(O

n)-O

n-S

tate

Dra

in C

urre

nt (

Am

ps)

VGS-Gate Source Voltage (Volts)

VGS=-10V

ID=-1mAVGS=VDS

-3.5

-3.0

-2.0

-0.5

0

-1.0

-2.5

-1.5

2.6

180

VGS=

-20V-14V

-5V

-6V

-7V

-4V-3.5V

-8V

VGS=-18V

ID(O

n) -O

n-S

tate

Dra

in C

urre

nt (

Am

ps)

VDS - Drain Source Voltage (Volts)

On-resistance v drain current

ID-Drain Current (Amps)

RD

S(O

N) -D

rain

So

urc

e R

esis

tan

ce (Ω

)

-0.1 -1.0

10

5

-2.0

-12V

-6V

-4V

0 -2 -4 -6 -8 -10

1

-10V-9V

-8V-7V

-5V

-9V

0

-0.6

-0.4

-0.2

-0.8

-1.6

-1.4-1.2

-1.0

-1.8

-2.0

0

-10

-6

-2

-4

-8

0 -2 -4 -6 -8 -10

ID=

-1A

-0.5A

-0.25A

-0.8

-0.6

-0.2

-0.4

VDS=-10V

-1.6

-1.4

-1.0

-1.2

-6V -7V VGS=-5V -8V -10V -9V

Tj-Junction Temperature (°C)

ZVP2106A

3-418

TYPICAL CHARACTERISTICS

Transconductance v drain current

ID- Drain Current (Amps)

gfs-

Tra

nsco

nduc

tanc

e (m

S)

0

Q-Charge (nC)

Transconductance v gate-source voltage

VGS-Gate Source Voltage (Volts)gf

s-Tr

ansc

ondu

ctan

ce (

mS

)

0 -10 -20 -30

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-C

apac

itanc

e (p

F)

Coss

VG

S-G

ate

Sou

rce

Vol

tage

(V

olts

)

Gate charge v gate-source voltage

-6

-8

-10

-14

-16

-12

-4

-2

0

VDS= -20V -30V -50V

-40 -50 0.2 0.4 0.6 0.8 1.0 1.2

40

20

0

60Ciss

Crss

80

100

1.4 1.6 1.8 2.0 2.2 2.4

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0

0

VDS=-10V200

150

100

50

250

300

0 -2 -4 -6 -8 -10

0

VDS=-10V

200

150

100

50

250

300

ZVP2106A

3-419