world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected...

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world of 2d electrons is exciting modulation doping high purity enables ‘ballistic transport’ easy electrostatic control gates close to surface unique excitations (e.g., fractional statistics)

Transcript of world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected...

Page 1: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

world of 2d electrons is exciting modulation doping

– high purity enables ‘ballistic transport’

– easy electrostatic control gates close to surface

– unique excitations (e.g., fractional statistics)

Page 2: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

‘exchange statistics’ in the

2d world

richer than the 3d world

Page 3: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

exchange statistics in 3d

fermions bosons

ψ ψ→ + ψ ψ→ −

both

ψ ψ→

Page 4: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

exchange statistics in 2d → abelian (Laughlin qp’s)

anyons

ψ ie θψ→ψ 2ie θψ→

ψ 2 4i ie eθ θψ→

2 4 4 2i i i ie e e eθ θ θ θ=

2ie θ

4ie θ

Page 5: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

exchange statistics in 2d → non-abelian

degenerate ground state

i ii

a aψ ψ ψ= = ⋅∑

aψ ψ= ⋅ ( )a ψ→ ⋅

U

exchange → unitary

ψ1 2ψ→U U

1 2 2 1U U U U≠

non-abelian anyons 1U

2U

Page 6: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

statistics revealed

via interference of quasiparticles

however, interference of fractional charges

was never observed by us

Page 7: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

looking for interference of fractional charges

we stumbled upon…

Page 8: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

Itamar Sivan, Hyungkook Choi, Amir Rosenblatt Vladimir Umansky Diana Mahalu M. Heiblum

Unexpected ‘Pairing’ in the IQHE Regime in interference

Page 9: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

our 2d world

high mobility 2DEG

in GaAs-AlGaAs

Page 10: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

e

e

B

applying quantizing magnetic field…QHE

skipping orbits

2d electron layer

high magnetic field

Page 11: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

ν = number of filled LL = number of electrons per flux quantum

φ0=h/e

EF cω

energy

*c meB

Ne

e

EF

Ne

ν =2

)( 21+= nE cn ω

2 =

Bl eB

in the bulk

Page 12: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

simplistic view of LL’s near the edge

an approximation there are inter-channel interactions

current carrying edge states

Page 13: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

edge channels

Page 14: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

edge channels immune to back scattering

1d edge channel carries VheI

2

=

Ef +eV

Ef Ef

Page 15: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

interference with edge channels

• incompressible bulk; current carried by edge channels

• edge channels encloses a definite area minimizes phase averaging, high visibility fringes

• electrons directed along definite paths flexible design of interferometers

• no back-scattering

insensitive to impurities

Page 16: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

interfering edge channels

two-path Mach-Zehnder & many-path Fabry-Perot

B X

Page 17: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

every interferometer needs a beam splitter Quantum Point Contact (QPC)

Vgate

Vsource

r λF

t

QPC 0 < t < 1

Page 18: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

preferential backscattering of edge channels

reflected higher LLs

transmitted lower LLs

partitioned LL

Vgate

Page 19: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

ne =1-2.5 x 1011 cm-2 B = 2-9 T T =20-30 mK

interference experiments

Page 20: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

Fabry – Perot interferometer

Page 21: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

S BS

optical FPI

electronic FPI

in the limit of only two-path interference

Page 22: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

etched

quantum point contact (w/bridge)

gates

2DEG in GaAs-AlGaAs

actual realization

area modulation gate

v = 2

Page 23: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

(2,0)

increasing B → lowers Area

small capacitance keeps # electrons constant

bare FPI – is Coulomb dominated (CD)

interfering the lowest Landau level

Page 24: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

screening Coulomb interaction in FPI

effective screening, AB >~4 µm2 effective screening, AB all sizes

tested FPI areas……..2 – 16 µm2

Page 25: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

FPI from CD to AB

adding screening: -- grounded ohmic contact -- top gate

Page 26: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

our experiments:

interference of outer edge channel

v =3

Page 27: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

𝑒𝑒2𝜋𝜋𝑖𝑖∙𝐴𝐴𝐴𝐴/(ℎ𝑒𝑒) 𝑒𝑒2𝜋𝜋𝑖𝑖∙𝐴𝐴𝐴𝐴/( ℎ2𝑒𝑒)

2.25 µm2

surprising AB interference

Page 28: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

2.25 µm2

1 ABh / e

δ − = 1 2 ABh / e

δ − =

area ~ 2.3 µm2

periodicity in B

Page 29: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

periodicity in B …. large 12.5µm FPI

12.5 µm2

h /e h /2e h /e

Page 30: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

12.5 µm2

periodicity in VMG …. large 12.5µm FPI

doubled slope….e*=2e

Page 31: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

can it be related to preferred even windings ?

unlikely two windings we measured h /2e ~ 50%

AB transmission…

𝐴𝐴 2 = 𝐴𝐴0 + 𝐴𝐴1 cos 2𝜋𝜋 ∙ 𝐴𝐴𝐴𝐴/𝜙𝜙0 + 𝐴𝐴2 cos 2𝜋𝜋 ∙ 2𝐴𝐴𝐴𝐴/𝜙𝜙0 + ⋯

h /e

h /2e

measured h/e…

h /e

h /2e

ideally…

4 x 4µm2

w/ dephasing

Page 32: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

independence on transmission coefficient

ℎ/2𝑒𝑒 regime

large FPI ℎ/𝑒𝑒 regime

Page 33: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

coherence @ dephasing

Page 34: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

preferential dephasing of channels

VC

VC

adding a ‘center QPC’

Page 35: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

preferential dephasing of channels

VC

VC

ground

Page 36: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

role of second channel @ vB =2

dephasing of second channel is irrelevant

h/e

VC VC VC

inner edge grounded

outer edge grounded

Page 37: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

dephasing inner channel fully dephases the outer channel

role of second channel @ vB =3

h/ 2e

VC VC VC

‘two-channel entanglement’

second edge grounded third edge grounded

Page 38: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

summarizing interference :

h /e & h /2e independent of FPI pinching

h /2e not due to preferred even windings

appearance of h /2e depends on ff (not on B or ne)

h /2e only when outer channel interferes

no inter-channel tunneling

Page 39: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

are 2e charges interfere ?

shot noise

Page 40: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

hot filament

cathode anode + -

emitted electrons

noisy current in vacuum tubes

classical shot noise

Schottky, 1918

it started with - noise in vacuum tubes

Page 41: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

Vapplied

~h/eVapplied

zero temperature ordered electrons are noiseless !

shot noise =0 …. full Fermi sea (non-partitioned electrons)

Khlus, 1987 Lesovik, 1989

Page 42: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

shot noise - single channel

t <<1 poissonian S =2eI Schottky formula

incoming transmitted

binomial S =2eI (1-t )

t

Khlus, 1987 Lesovik, 1989

spectral density of current fluctuations *)i(

i eI)(S 2

∝≡ ><

ν∆ν ν∆∆

(A2/Hz)

Page 43: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

experimental setup

* frequency above 1/f noise corner of preamplifier; * capacitance compensated by resonant circuit;

QPC

cooled preamp

L R C

calibration signal

spectrum analyzer

f0 ,∆f0 C<<

50 Ω ; 300 K

1 GΩ

warm preamp

voltage gain = 1000

coax

averaging time,τ

noise <i2> DC current

VDC

cryostat

‘home made’

kHzRCπ

f,MHzLCπ

f 30≈2

1=Δ4→2≈

21

= 00

Page 44: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

shot noise in partitioning QPC

0

2

4

6

0 1 2 3

curr

ent n

oise

, S

i (1

0 -28 A

2 /Hz)

current, I (nA)

T = 57mK t = 0.37

−+=

eVTk

TkeVcoth)t(eITgk)(S B

BBi

22

1240

e

Reznikov et al. PRL 1995

Page 45: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

-20 -10 0 10 20

0

1

2

3

4

5

6

ISD

(nA)

SI(0

) (×1

0-27 A

2 Hz-1

)

3

0 128 254-276 -135V

SD (µV)

Cooper pairs

e*=e

e*=2e

shot noise in a superconductor

Das et al., Nature Comm. 2012

0 20 400

1

2

3

4T=9mK

e/3

Shot

Noi

se, S

(10-3

0 A2 /Hz)

Back Scattered Current, IB (pA)

Chung et. al. PRL 2003

fractional charge

Page 46: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

shot noise, charge

quasiparticle charge e* = 2e @ h/2e regime

Page 47: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

charge evolution @ vB ~ 3

VR

VR

forming the FPI by pinching QPCR

h/2e

QPCR

QPCR

highly non-linear transmission

Page 48: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

charge: dephasing h/2e …… 2e → e

no interference

no interference

dephasing by grounding the second edge channel

charge drops to e

Page 49: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

– a screened FPI …. AB interference

– AB periodicity vB ~1 - 2.5 …… 𝜙𝜙𝑜𝑜 = ℎ𝑒𝑒

• quasi-particles charge: 𝑒𝑒∗~𝑒𝑒

– AB periodicity: vB ~3 - 4.5 … . .𝜙𝜙𝑜𝑜∗ = ℎ2𝑒𝑒

• quasi-particles charge: 𝑒𝑒∗~2𝑒𝑒

– two edge-channels entanglement

summarizing :

Page 50: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

screening Coulomb domination

revealed inter-channel interaction

leading to unexpected pairing of electrons

presently, we do not understand the effect