Download - world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

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Page 1: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

world of 2d electrons is exciting modulation doping

– high purity enables ‘ballistic transport’

– easy electrostatic control gates close to surface

– unique excitations (e.g., fractional statistics)

Page 2: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

‘exchange statistics’ in the

2d world

richer than the 3d world

Page 3: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

exchange statistics in 3d

fermions bosons

ψ ψ→ + ψ ψ→ −

both

ψ ψ→

Page 4: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

exchange statistics in 2d → abelian (Laughlin qp’s)

anyons

ψ ie θψ→ψ 2ie θψ→

ψ 2 4i ie eθ θψ→

2 4 4 2i i i ie e e eθ θ θ θ=

2ie θ

4ie θ

Page 5: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

exchange statistics in 2d → non-abelian

degenerate ground state

i ii

a aψ ψ ψ= = ⋅∑

aψ ψ= ⋅ ( )a ψ→ ⋅

U

exchange → unitary

ψ1 2ψ→U U

1 2 2 1U U U U≠

non-abelian anyons 1U

2U

Page 6: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

statistics revealed

via interference of quasiparticles

however, interference of fractional charges

was never observed by us

Page 7: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

looking for interference of fractional charges

we stumbled upon…

Page 8: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

Itamar Sivan, Hyungkook Choi, Amir Rosenblatt Vladimir Umansky Diana Mahalu M. Heiblum

Unexpected ‘Pairing’ in the IQHE Regime in interference

Page 9: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

our 2d world

high mobility 2DEG

in GaAs-AlGaAs

Page 10: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

e

e

B

applying quantizing magnetic field…QHE

skipping orbits

2d electron layer

high magnetic field

Page 11: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

ν = number of filled LL = number of electrons per flux quantum

φ0=h/e

EF cω

energy

*c meB

Ne

e

EF

Ne

ν =2

)( 21+= nE cn ω

2 =

Bl eB

in the bulk

Page 12: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

simplistic view of LL’s near the edge

an approximation there are inter-channel interactions

current carrying edge states

Page 13: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

edge channels

Page 14: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

edge channels immune to back scattering

1d edge channel carries VheI

2

=

Ef +eV

Ef Ef

Page 15: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

interference with edge channels

• incompressible bulk; current carried by edge channels

• edge channels encloses a definite area minimizes phase averaging, high visibility fringes

• electrons directed along definite paths flexible design of interferometers

• no back-scattering

insensitive to impurities

Page 16: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

interfering edge channels

two-path Mach-Zehnder & many-path Fabry-Perot

B X

Page 17: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

every interferometer needs a beam splitter Quantum Point Contact (QPC)

Vgate

Vsource

r λF

t

QPC 0 < t < 1

Page 18: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

preferential backscattering of edge channels

reflected higher LLs

transmitted lower LLs

partitioned LL

Vgate

Page 19: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

ne =1-2.5 x 1011 cm-2 B = 2-9 T T =20-30 mK

interference experiments

Page 20: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

Fabry – Perot interferometer

Page 21: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

S BS

optical FPI

electronic FPI

in the limit of only two-path interference

Page 22: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

etched

quantum point contact (w/bridge)

gates

2DEG in GaAs-AlGaAs

actual realization

area modulation gate

v = 2

Page 23: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

(2,0)

increasing B → lowers Area

small capacitance keeps # electrons constant

bare FPI – is Coulomb dominated (CD)

interfering the lowest Landau level

Page 24: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

screening Coulomb interaction in FPI

effective screening, AB >~4 µm2 effective screening, AB all sizes

tested FPI areas……..2 – 16 µm2

Page 25: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

FPI from CD to AB

adding screening: -- grounded ohmic contact -- top gate

Page 26: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

our experiments:

interference of outer edge channel

v =3

Page 27: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

𝑒𝑒2𝜋𝜋𝑖𝑖∙𝐴𝐴𝐴𝐴/(ℎ𝑒𝑒) 𝑒𝑒2𝜋𝜋𝑖𝑖∙𝐴𝐴𝐴𝐴/( ℎ2𝑒𝑒)

2.25 µm2

surprising AB interference

Page 28: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

2.25 µm2

1 ABh / e

δ − = 1 2 ABh / e

δ − =

area ~ 2.3 µm2

periodicity in B

Page 29: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

periodicity in B …. large 12.5µm FPI

12.5 µm2

h /e h /2e h /e

Page 30: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

12.5 µm2

periodicity in VMG …. large 12.5µm FPI

doubled slope….e*=2e

Page 31: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

can it be related to preferred even windings ?

unlikely two windings we measured h /2e ~ 50%

AB transmission…

𝐴𝐴 2 = 𝐴𝐴0 + 𝐴𝐴1 cos 2𝜋𝜋 ∙ 𝐴𝐴𝐴𝐴/𝜙𝜙0 + 𝐴𝐴2 cos 2𝜋𝜋 ∙ 2𝐴𝐴𝐴𝐴/𝜙𝜙0 + ⋯

h /e

h /2e

measured h/e…

h /e

h /2e

ideally…

4 x 4µm2

w/ dephasing

Page 32: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

independence on transmission coefficient

ℎ/2𝑒𝑒 regime

large FPI ℎ/𝑒𝑒 regime

Page 33: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

coherence @ dephasing

Page 34: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

preferential dephasing of channels

VC

VC

adding a ‘center QPC’

Page 35: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

preferential dephasing of channels

VC

VC

ground

Page 36: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

role of second channel @ vB =2

dephasing of second channel is irrelevant

h/e

VC VC VC

inner edge grounded

outer edge grounded

Page 37: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

dephasing inner channel fully dephases the outer channel

role of second channel @ vB =3

h/ 2e

VC VC VC

‘two-channel entanglement’

second edge grounded third edge grounded

Page 38: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

summarizing interference :

h /e & h /2e independent of FPI pinching

h /2e not due to preferred even windings

appearance of h /2e depends on ff (not on B or ne)

h /2e only when outer channel interferes

no inter-channel tunneling

Page 39: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

are 2e charges interfere ?

shot noise

Page 40: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

hot filament

cathode anode + -

emitted electrons

noisy current in vacuum tubes

classical shot noise

Schottky, 1918

it started with - noise in vacuum tubes

Page 41: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

Vapplied

~h/eVapplied

zero temperature ordered electrons are noiseless !

shot noise =0 …. full Fermi sea (non-partitioned electrons)

Khlus, 1987 Lesovik, 1989

Page 42: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

shot noise - single channel

t <<1 poissonian S =2eI Schottky formula

incoming transmitted

binomial S =2eI (1-t )

t

Khlus, 1987 Lesovik, 1989

spectral density of current fluctuations *)i(

i eI)(S 2

∝≡ ><

ν∆ν ν∆∆

(A2/Hz)

Page 43: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

experimental setup

* frequency above 1/f noise corner of preamplifier; * capacitance compensated by resonant circuit;

QPC

cooled preamp

L R C

calibration signal

spectrum analyzer

f0 ,∆f0 C<<

50 Ω ; 300 K

1 GΩ

warm preamp

voltage gain = 1000

coax

averaging time,τ

noise <i2> DC current

VDC

cryostat

‘home made’

kHzRCπ

f,MHzLCπ

f 30≈2

1=Δ4→2≈

21

= 00

Page 44: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

shot noise in partitioning QPC

0

2

4

6

0 1 2 3

curr

ent n

oise

, S

i (1

0 -28 A

2 /Hz)

current, I (nA)

T = 57mK t = 0.37

−+=

eVTk

TkeVcoth)t(eITgk)(S B

BBi

22

1240

e

Reznikov et al. PRL 1995

Page 45: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

-20 -10 0 10 20

0

1

2

3

4

5

6

ISD

(nA)

SI(0

) (×1

0-27 A

2 Hz-1

)

3

0 128 254-276 -135V

SD (µV)

Cooper pairs

e*=e

e*=2e

shot noise in a superconductor

Das et al., Nature Comm. 2012

0 20 400

1

2

3

4T=9mK

e/3

Shot

Noi

se, S

(10-3

0 A2 /Hz)

Back Scattered Current, IB (pA)

Chung et. al. PRL 2003

fractional charge

Page 46: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

shot noise, charge

quasiparticle charge e* = 2e @ h/2e regime

Page 47: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

charge evolution @ vB ~ 3

VR

VR

forming the FPI by pinching QPCR

h/2e

QPCR

QPCR

highly non-linear transmission

Page 48: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

charge: dephasing h/2e …… 2e → e

no interference

no interference

dephasing by grounding the second edge channel

charge drops to e

Page 49: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

– a screened FPI …. AB interference

– AB periodicity vB ~1 - 2.5 …… 𝜙𝜙𝑜𝑜 = ℎ𝑒𝑒

• quasi-particles charge: 𝑒𝑒∗~𝑒𝑒

– AB periodicity: vB ~3 - 4.5 … . .𝜙𝜙𝑜𝑜∗ = ℎ2𝑒𝑒

• quasi-particles charge: 𝑒𝑒∗~2𝑒𝑒

– two edge-channels entanglement

summarizing :

Page 50: world of 2d electrons is exciting modulation doping...Diana Mahalu M. Heiblum Unexpected ‘Pairing’ in the IQHE Regime in interference our 2d world high mobility 2DEG in GaAs-AlGaAs

screening Coulomb domination

revealed inter-channel interaction

leading to unexpected pairing of electrons

presently, we do not understand the effect