Thickness measurement of thin films, foils and coatings by means of reflected β-radiation: I...
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Classified abstracts 443-457 30 443. HgSe thin film structure. (USSR) The structure of stoichiometric HgSe thin films, prepared byvacuum sunblimation, were investigated with the aid of an electron micro- scope and electronograph. Conditions for the formation of single crystal layers were determined. I D Nabitovieh et al, Fiz Elektronika, 1, (1), 1969, 62-67 (in Ukranian). 30 444. Preparation of thin nickel foils. (USSR) A method of preparation of thin nickel foils is described, based on preliminary deposition of a thin NaC1 film (10-60/~g/cm =) on a glass substrate by thermal evaporation in vacuum. Then NiCO4 vapours are admitted to a pressure of 1-2 x 10-1 tort at a substrate tempera- ture of 200°C. The nickel layer can be easily separated from the sub- strate with the aid of water. L A Pobedonotsev and Yu A Selitskiy, Prib Tekh Eksper, No 3, May/ June 1970, 263 (in Russian). 3O 445. Structure of selenium epitaxial films and some effects of dynamic electron diffraction. (USSR) Results of electron microscopic and electron diffraction investiga- tions of the conditions of formation and the structure of selenium single crystal films are presented. It is found that selenium single crystal films with high structural perfection can be obtained on the cleaved planes of KI and KBr single crystals. The surface state of the cleaved planes can be observed with the aid of selenium vacuum decoration of the (100) planes of KI and KBr. O I Andrievskiy et al, Fiz Elektronike, 1 (1), 1969, 68-73 (in Ukranian). 30 446. Dependence of the silicon monoxide distribution in vacuum on the incidence angle of the molecular beam. (USSR) Silicon monoxide films, 6/~m thick were prepared by vacuum evapo- ration on the external surface of a glass cylinder. It was found that at high incidence angles the film thickness considerably exceeds the calculated value. The optical and mechanical properties of thick films of silicon monoxide rapidly deteriorate at incidence angles of the beam above 30 degrees. B A Shapockin and V N Sergeev, Tr Mosk Vysch Tekhn Uchilischa N E Baumana, No 135, 1970, 157-162 (in Russian). 30 447. Highly oriented thin oxide films on single crystals of Fe-Si alloys. I. The (001) surface of the substrate. (Czechoslovakia) The oxide films were grown on the (001) surface of Fe-Si alloy. It was found that highly oriented oxide films grow on single crystals of Fe-Si alloys under oxidation conditions of 400°C and oxygen partial pressure of 30 torr. Two phase films were studied by reflection high- energy electron diffraction. K Volenik and J Pitter, Czech J Phys, B20 (9), 1970, 994-1002. 30 448. Utilization of an electric are for evaporation of refractory metals in vacuum. (USSR) A vacuum stationary droplet evaporator for refractory metals is described. An alternating current arc in vacuum is stabilized with the aid of the high voltage and the thermal inertia of electrodes. For arc initiation, an auxiliary heated electrode with thermionic emission is used. It is noted that on the basis of the electric arc vacuum evapo- rator, an automated system for the preparation of thin films of re- fractory metals can be designed. F V Uryash et al, Elektronnaya Tekhnika, Nauchno Tekhn Sborn, Set 10, 1, 1970, 3-6 (in Russian). 3O 449. Vacuum evaporation by electron beam. (Hungary) The electron beam vacuum evaporation apparatus, type PA-6, is de- scribed. It consists of an electron gun, a high voltage supply unit and a control unit. The electron gun incorporates a conical triode-type electron beam source with a tungsten cathode heated by electron bombardment, a steel coated focusing coil with air gap, a bidirec- tional 4- 30 degrees deflecting system, and the vacuum tight enclosure of the electron gun. The high voltage supply installed in a cabinet is protected against overloads. The portable case containing the con- trol unit is connected to the supply unit by a flexible multi-wire cable. The apparatus is suitable for evaporation of tungsten, tantalum molybdenum, iridium, rhodium, copper, aluminium, chromium, nickel and nickel-chromium alloys. Good results were obtained also with evaporation of alumina, silicon monoxide, silica, graphite, and tantalum and tungsten carbides. High evaporation rates can be obtained for refractory metal bars as well as for refractory metals in water-cooled crucibles. T Szues and G Vago, Finommechanica, 8 (10), 1969, 311-317 (in Hungarian). 30 450. Magnetic thin film stores. (Hungary) The magnetic characteristics of active films, consisting of 80 per cent of nickel and 20 per cent of iron deposited on glass by flash evapora- tion, are determined. A Mihalyi and K Somfai, Automatizalas, 2 (6), 1969, 27-32 (in Hungarian). 30 451. Growth of Fe single crystal films on NaCI crystals. (USSR) It was found that uniform, single crystal Fe films could be produced on NaCI crystals by means of substrate heating in vacuum utilizing a molybdenum spiral. The effect is explained by formation of a layer of molybdenum nuclei. E Zh Lyudvik et al, Fizika, Khimiya Khem Tekhnol, Krasnoyarsk 1969, 21-23 (in Russian). 3O 452. Thickness measurement of thin films, foils and coatings by means of reflected fl-radintion. (Hungary) A measuring instrument for thickness determination of thin films by means of reflected fl-radiation is described. The radiation source involves no danger and the method can be used for continuous measurement. I Lipovetz and D Vodros, Periodica Polytechnica, Chemical Engineer- ing, 13 (4), 1969, 367-373 (in German). 3O 453. Determining the thickness of epitaxial films by an infra-red inter- ference method. (Hungary) From the measurement of the interference spectrum in the range of wavelengths from 400 to 700 cm -1 and the specific resistance, a method is presented which enables accurate assessment of the epitaxial film thickness. L Fejes, Magyar Fizikai Folyoirat, 17 (6), 1969, 477-494 (in Hungarian). 31. EVACUATION AND SEALING 31 on image orthicon targets. 454. Minimizing the image retention (Czechoslovakia) Effects leading to image retention on an image orthicon target are discussed. A method of reducing the image retention by using new technique of preparing target glass films is presented. The remanent charge passing through the transverse target resistance is analyzed mathematically. Experimental results for various target films and image orthicon characteristics are presented. J Prehlik et al, Tesla Electronics, 3 (3), 1970, 83-87. 31 455. Investigation of non-evaporating getter properties. (USSR) The sorption characteristics of six non-evaporating getters with different compositions are measured in a vacuum system with oil-free pumping. Mechanical properties and vibration and thermal stabilities are also studied. V F Popov, Elektron Tekh Elektron SVCh, 7, 1970, 150-153 (in Russian). 31 456. Electro-vacuum devices for thermal investigation. (USSR) Application of a vacuum tube in the thermal investigation of an electrically conducting heat transfer media enables a specific heat load of the order of 107 kcal/m2hour to be determined. A vacuum cylin- drical diode with an inner cathode and an outer anode, having an anode dissipation of 20 kW at anode voltage of 1 kV and residual gas pressure of 10-5 to 10-~ torr, is described. Uniform distribution of the heat flow is obtained in the space charge limited region of the diode operation. A graphite cathode is used for high heat loads. V A Povsten, Tr 1-oy Yubil Resp Mezhvuz Konfer Probl Povysh Effektivn Elektro Vakuum Prib, 1, Kiev 1970, 37-53 (in Russian). 31 457. New aspect of formation mechanism of the transverse cathode resistance. (Czechoslovakia) Formation mechanism of the transverse cathode resistance develop- ing during life of electron tubes with oxide coated cathodes is studied. Life tests of high transconductance tubes (type E88CC) showed that the transconductance value, measured as a function of the time of 247
Transcript of Thickness measurement of thin films, foils and coatings by means of reflected β-radiation: I...
Classified abstracts 443-457
30 443. HgSe thin film structure. (USSR) The structure of stoichiometric HgSe thin films, prepared byvacuum sunblimation, were investigated with the aid of an electron micro- scope and electronograph. Conditions for the formation of single crystal layers were determined. I D Nabitovieh et al, Fiz Elektronika, 1, (1), 1969, 62-67 (in Ukranian).
30 444. Preparation of thin nickel foils. (USSR) A method of preparation of thin nickel foils is described, based on preliminary deposition of a thin NaC1 film (10-60/~g/cm =) on a glass substrate by thermal evaporation in vacuum. Then NiCO4 vapours are admitted to a pressure of 1-2 x 10 -1 tor t at a substrate tempera- ture of 200°C. The nickel layer can be easily separated from the sub- strate with the aid of water. L A Pobedonotsev and Yu A Selitskiy, Prib Tekh Eksper, No 3, May/ June 1970, 263 (in Russian).
3O 445. Structure of selenium epitaxial films and some effects of dynamic electron diffraction. (USSR) Results of electron microscopic and electron diffraction investiga- tions of the conditions of formation and the structure of selenium single crystal films are presented. It is found that selenium single crystal films with high structural perfection can be obtained on the cleaved planes of KI and KBr single crystals. The surface state of the cleaved planes can be observed with the aid of selenium vacuum decoration of the (100) planes of KI and KBr. O I Andrievskiy et al, Fiz Elektronike, 1 (1), 1969, 68-73 (in Ukranian).
30 446. Dependence of the silicon monoxide distribution in vacuum on the incidence angle of the molecular beam. (USSR) Silicon monoxide films, 6/~m thick were prepared by vacuum evapo- ration on the external surface of a glass cylinder. It was found that at high incidence angles the film thickness considerably exceeds the calculated value. The optical and mechanical properties of thick films of silicon monoxide rapidly deteriorate at incidence angles of the beam above 30 degrees. B A Shapockin and V N Sergeev, Tr Mosk Vysch Tekhn Uchilischa N E Baumana, No 135, 1970, 157-162 (in Russian).
30 447. Highly oriented thin oxide films on single crystals of Fe-Si alloys. I. The (001) surface of the substrate. (Czechoslovakia) The oxide films were grown on the (001) surface of Fe-Si alloy. It was found that highly oriented oxide films grow on single crystals of Fe-Si alloys under oxidation conditions of 400°C and oxygen partial pressure of 30 torr. Two phase films were studied by reflection high- energy electron diffraction. K Volenik and J Pitter, Czech J Phys, B20 (9), 1970, 994-1002.
30 448. Utilization of an electric are for evaporation of refractory metals in vacuum. (USSR) A vacuum stationary droplet evaporator for refractory metals is described. An alternating current arc in vacuum is stabilized with the aid of the high voltage and the thermal inertia of electrodes. For arc initiation, an auxiliary heated electrode with thermionic emission is used. It is noted that on the basis of the electric arc vacuum evapo- rator, an automated system for the preparation of thin films of re- fractory metals can be designed. F V Uryash et al, Elektronnaya Tekhnika, Nauchno Tekhn Sborn, Set 10, 1, 1970, 3-6 (in Russian).
3O 449. Vacuum evaporation by electron beam. (Hungary) The electron beam vacuum evaporation apparatus, type PA-6, is de- scribed. It consists of an electron gun, a high voltage supply unit and a control unit. The electron gun incorporates a conical triode-type electron beam source with a tungsten cathode heated by electron bombardment, a steel coated focusing coil with air gap, a bidirec- tional 4- 30 degrees deflecting system, and the vacuum tight enclosure of the electron gun. The high voltage supply installed in a cabinet is protected against overloads. The portable case containing the con- trol unit is connected to the supply unit by a flexible multi-wire cable. The apparatus is suitable for evaporation of tungsten, tantalum molybdenum, iridium, rhodium, copper, aluminium, chromium, nickel and nickel-chromium alloys. Good results were obtained also with evaporation of alumina, silicon monoxide, silica, graphite, and tantalum and tungsten carbides. High evaporation rates can be
obtained for refractory metal bars as well as for refractory metals in water-cooled crucibles. T Szues and G Vago, Finommechanica, 8 (10), 1969, 311-317 (in Hungarian).
30 450. Magnetic thin film stores. (Hungary) The magnetic characteristics of active films, consisting of 80 per cent of nickel and 20 per cent of iron deposited on glass by flash evapora- tion, are determined. A Mihalyi and K Somfai, Automatizalas, 2 (6), 1969, 27-32 (in Hungarian).
30 451. Growth of Fe single crystal films on NaCI crystals. (USSR) It was found that uniform, single crystal Fe films could be produced on NaCI crystals by means of substrate heating in vacuum utilizing a molybdenum spiral. The effect is explained by formation of a layer of molybdenum nuclei. E Zh Lyudvik et al, Fizika, Khimiya Khem Tekhnol, Krasnoyarsk 1969, 21-23 (in Russian).
3O 452. Thickness measurement of thin films, foils and coatings by means of reflected fl-radintion. (Hungary) A measuring instrument for thickness determination of thin films by means of reflected fl-radiation is described. The radiation source involves no danger and the method can be used for continuous measurement. I Lipovetz and D Vodros, Periodica Polytechnica, Chemical Engineer- ing, 13 (4), 1969, 367-373 (in German).
3O 453. Determining the thickness of epitaxial films by an infra-red inter- ference method. (Hungary) From the measurement of the interference spectrum in the range of wavelengths from 400 to 700 cm -1 and the specific resistance, a method is presented which enables accurate assessment of the epitaxial film thickness. L Fejes, Magyar Fizikai Folyoirat, 17 (6), 1969, 477-494 (in Hungarian).
31. EVACUATION AND SEALING 31
on image orthicon targets. 454. Minimizing the image retention (Czechoslovakia) Effects leading to image retention on an image orthicon target are discussed. A method of reducing the image retention by using new technique of preparing target glass films is presented. The remanent charge passing through the transverse target resistance is analyzed mathematically. Experimental results for various target films and image orthicon characteristics are presented. J Prehlik et al, Tesla Electronics, 3 (3), 1970, 83-87.
31 455. Investigation of non-evaporating getter properties. (USSR) The sorption characteristics of six non-evaporating getters with different compositions are measured in a vacuum system with oil-free pumping. Mechanical properties and vibration and thermal stabilities are also studied. V F Popov, Elektron Tekh Elektron SVCh, 7, 1970, 150-153 (in Russian).
31 456. Electro-vacuum devices for thermal investigation. (USSR) Application of a vacuum tube in the thermal investigation of an electrically conducting heat transfer media enables a specific heat load of the order of 107 kcal/m2hour to be determined. A vacuum cylin- drical diode with an inner cathode and an outer anode, having an anode dissipation of 20 kW at anode voltage of 1 kV and residual gas pressure of 10 -5 to 10 -~ torr, is described. Uniform distribution of the heat flow is obtained in the space charge limited region of the diode operation. A graphite cathode is used for high heat loads. V A Povsten, Tr 1-oy Yubil Resp Mezhvuz Konfer Probl Povysh Effektivn Elektro Vakuum Prib, 1, Kiev 1970, 37-53 (in Russian).
31 457. New aspect of formation mechanism of the transverse cathode resistance. (Czechoslovakia) Formation mechanism of the transverse cathode resistance develop- ing during life of electron tubes with oxide coated cathodes is studied. Life tests of high transconductance tubes (type E88CC) showed that the transconductance value, measured as a function of the time of
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