nEDM with Spallation UCN Source of He-II - uni-mainz.de fileRamsey resonance EDM cell Our nEDM...
Transcript of nEDM with Spallation UCN Source of He-II - uni-mainz.de fileRamsey resonance EDM cell Our nEDM...
Nuclei in matter1
nEDM with Spallation UCN Source of He-II
Y. Masuda (KEK), April 15, 2016, Mainz
+
-dnNeutron
10-1
3 cm
SpinCP violation
shifts charge distribution
μn
EDM cell
nEDM
10-26
10-28
10-24
10-22
10-20
e cm10-30
Theoreticalpredictions
1950 2000
Cold nbeam
UCN
History
1950
2
10-20
10-22
10-24
10-26 e cm
Year
upper limitof nEDM
ρ = 1 UCN/cm3
Pendlebury800 UCN/cm3
A He-II UCN source
E 10 kV/cm
Bo 1
μT
spin s
S matrix: phase operator U(t) = exp{i(μ·B0 + dn∙E)∙t/h}
rotation operator μ, dn ∝ s
EDM cell
1st π/2ωotc precession phase
Our EDM measurement
3
(ω-ωo)tc
ωtc RF phase2nd π/2
Statistical error: 1. N, He-II spallation UCN source2. Pn, Magnetic extraction of UCN from He-II
10-27~10-28 e cm
Systematic error: 3. B0 monitor, 129Xe co-magnetometer 10-27 e cm
The difference (ω-ωo)tc is measured by polarimetry: δdsta = h/{2PnEtc√N}
20K D2O
Ramsey resonance EDM cell
Our nEDM apparatus
VF(guide)= 210 neV
He-IIVacuum
SCM
Al foils
UCN valve is closed during production
2. Magnetic extraction of UCN μB0(3.5T) = 210 neV > VF(Al)=54 neV
10K D2O
300KD2O
12L He-II
Target
Polarized UCN PUCN~100%
Spin analyzerδdsta = h/{2PnEtc√N}
1. UCN production in He-II N∝production rate∝Ep×Ip
EBo
proton beamN∝production time∝τs
Rotary valve
3. 129Xe co-magnetometer
P = 200 UCN/cm3/s, τs = 100 s in 12 L He-II at Ec = 210 new
ρpol = 800 UCN/cm3 in EDM cell of Ec = 90 neV
5
ρ
t τs
ρ = Pτs
P
P (production rate)= ∫∫dEindEUCN
Nσ(Ein→EUCN)dΦn(Ein)/dEin
∝Ep×Ip
Energy deposit upon spallation reaction
target
10K D2OHe-II
Target He-II 10K D2O
400MeV×1μA 0.1 W 4.4 W 400MeV×10μA 1 W 44 W 500MeV×40μA 5 W 220 W (our goal) He-II bottle wall
is dominant
Proton beam power
p beam →
Longer UCN production
6
250 s
123 s
64 s
36 s
600 s
0.8
K
0.9
K
1 K
1.1
K
1.2
K
1370 s
0.7
K
He-II phononup-scatteringGolub, 1983
= 174 s
τβ = 886 s (β decay)
τph = 600 s at 0.8 K
τw = 246 s (wall loss) Z. Phys. B59(1985)261
τ3He = 28 ms at 3He/4He = 1.4x10-6
= 3900 s at 3He/4He = 10-11
τs (UCN lifetime)
= 1/{1/τβ + 1/τ3He + 1/τw + 1/τph}
We are aiming at τs = 100 s
= 174 s
20K D2O
1Kpot
3 He
pu
mp
ing
PulseTubecryostat
4 He pumping
8Lpot
Liq.He
Isopure4He
3He
EDMcell
3Hecryostat
10K D2O
UCNvalve
SCMpolarizer
UCN detector
Doorvalve
3He-4HeHeat
exchanger
300K D2O
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Target
He-II cooling at 0.8 K
Heating
γ heating are conducted through He-II
Heat load is removed upon3He evaporation.
Proton beam Heatpower He-II400MeV×1μA 0.1 W400MeV×10μA 1 W500MeV×40μA 5 W our goal
3He flow
0.032 mol/s0.16 mol/s
3He pumping
1Kpot
PulseTube
4 He pumping
8Lpot
Liq.Heneedlevalves
3He
Isopure
4He3 H
epu
mpi
ng
3He-4Heheat
exchanger
He-II
20K D2O10K D2O
Target
104 m3/h
pump3He reserver
Pre-coolingfrom 300Kto 30K
Heating
3He of 0.16 mol/s at Ep×Ip = 20 kW is returned to cryostat
φ12→φ25
φ12
γ heating are conducted through He-II
Cooling power3He evaporation rate
3Hefilling
0.16mol/s
0.24 mol/s at 0.7 K
20K D2O
1Kpot
3 He
pu
mp
ing
4 He pumping
8Lpot
Liq.He
Isopure4He
3He
PulseTube
UCN sourceGM cryostat
10K D2OHe-II
UCNvalve
SCMpolarizer
UCN detector
Doorvalve
300K D2O
9
Present status of our UCN source
SteelConcrete GraphiteTarget
Exhaustvalve for
bottle cleaning
3Hecryostat
3He-4HeHeat
exchanger
EDMcell
Superconductingmagnet
3He cryostat
UCN source
Photo of our UCN source
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He-II
Heatexchanger
3He circulator
SuperconductingUCN polarizer
Isopure 4Hecirculator
GM cryostats andHe recovery line
Peripherals3He-4He heatexchanger
He-II
Heat load from outside
SCM for UCNextraction
B0
Heatexchanger
was 1 W
40K radiation shield
Replaced Be-Cu with stainless steel for better thermal insulation
to the horizontal UCN guide and the UCN extraction part,
0.3 W 0.2 W
Added4K radiation shield
Superconductingmagnet
3He cryostat
UCN source
Increasing UCN production rate from 4 to 200 UCN/cm3/s at Ec = 210 neV
3He pumping of 2000 m3/h
Heat load on He-II 1 W 0.3 W 0.2 W3He evaporation 32×10-3 mol/s 9.6×10-3 mol/s 6.4×10-3 mol/s He-II temperature 0.7 K 0.6 K 0.58 K
10000 m3/h for 5W (10 W) Ep×Ip = 20 kW
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We have achievedcooling power of 1 W at 0.7 K (2 W at 0.8 K)
Ep×Ip = 4 kW (8 kW)
20K D2O
1Kpot
3 He
pu
mp
ing
4 He pumping
8Lpot
Liq.He
Isopure4He
3He
PulseTube
UCN sourceGM cryostat
10K D2OSCM
polarizer
UCNdoublevalve
UCN detector
Spinanalyzer
Spinflipper 300K D2O
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He-II
TargetGraphiteSteelConcrete
3He cryostat
UCNvalve
UCN production and polarized UCN extraction
UCN guide
UCN spin flipperanalyzer
UCN detector
UCN production
UCN polarization
3He cryostat
SuperconductingUCN polarizer
15
Effect of holding field
Preliminary
to be published
Preliminary
VF(guide)= 210 neV
He-IIVacuum
SCMB0
Al foilsUCN was counted as a function of valve opening time Including Al foils
B0 = 0 → 3.5 T τ = 20 → 40 s
τ = 9 s
UCN transmission is enhanced ! μB0(3.5T) = 210 neV, VF(Al) = 54 neV. He-II UCN valve is effective !
16
UCN storage lifetime in He-II
PreliminaryPreliminary
He-II
Increasing UCN storage lifetime to 100 s
Wall loss
VE < V
We need material of low absorption and high Fermi potential
loss/collision:μ = 2f ∫{Ecos2θ/(V-Ecos2θ)}1/2
cosθ d(cosθ) f = W/V optical potential U = V - iW = 2πh2/m N (ar - iai) Im f(0) = k/4π σtot
σtot = σinela + σa
3He absorption: τ3He = 3900 s at 3He/4He = 10-11
He-II
electropolished SUS316L Ra < 2 nm electropolishedaluminum
58Ni coated pipegood heat conduction
Suitable wall material
In future, Be pipe or DLC coating? UCN valve
We need material of lower f = W/V !
for τ > 100 s
The material should sustain at the low temperature !
NiP → 58Ni → Be pipe or DLC coating?
20K D2O
1Kpot
3 He
pu
mp
ing
4 He pumping
8Lpot
Liq.He
Isopure4He
3He
PulseTube
10K D2OSCM
UCN detector
Spinanalyzer
Spinflipper
Rotaryvalve
Doorvalve
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He-II
Target
GraphiteSteelConcrete
nEDM, KEK-Osaka-RCNP
H.V.
EDMcell
3He cryostat
1. He-II UCN productionin spallation source
2. Magneticextraction of UCN
from He-II
3. nEDM with 129Xe co-magnetometer
nEDM apparatus connected to the UCN source
SuperconductingUCN polarizer
3He cryostatCompensationcoils
SpallationUCN source
Ramsey resonance apparatus
Permalloyshield
Ramsey resonance apparatus
π/2 RF coilEDM cell
Spherical coil for B0
UCN valveDoor valve
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Iron magnetized
foil
Spin flipper
Rotary valve
UCN detector
Old source
Ramsey resonance
(ω-ωo)tc =
-4π-2π0 2π 4π
-5π-3π
-π π3π
5π
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������������������������µ��
������������ �� 200 mG
measured by old source
22
nEDM is measured from shift upon E reversal B0 stability
23
B0 monitor: 129Xe spin precession
M. Mihara
Bo
EDM cell
129Xe
λ = 252 nmδν < 1 GHzP > 0.5 WBeam size< 50 μm
photon detector
x8
μ
IR photons
t 10-27 e cm
5 days of measurement δB0 = 0.3 fT
P129Xe = 3 mmTorr
895.5nm823.4
nm
-1/2
2GHz
+3/2
+1/2
+5/2+3/2
F=3/2F=5/2
5p5(2P3/2)6p(2[3/2]2)
5p5(2P3/2)6s(2[3/2]1) 5p5(2P3/2)6s(2[3/2]2)
5p6(1S0)6s F=1/2
252.5 nm ×2δMF = +2
σ+
T. Chupp
129Xe level scheme
Rb-Xe spin exchange optical pumping
B0 solenoid coil
B0 = 4.3 mT
B1 coil
pickupcoilσ+
B1 (ν = 51.5 kHz)0.3
0.2
0.1
0.0
-0.1Lo
ck-in
out
(V)
543210t (s)
B0
Xe 10 TorrN2 750 Torr
enriched Xe(129Xe 86%)156 °C
natural Xe(129Xe 26.4%)141 °C
We have achieved129Xe polarization of 70%
Happer
1Kpot
PulseTube
4 He pumping
8Lpot
Liq.Heneedlevalves
3He
Isopure
4He3 H
epu
mpi
ng
3He-4Heheat
exchanger
He-II
20K D2O10K D2O
Target
104 m3/h
pump3He reserver
We are remodeling cryostat for safety
Present helium venting tube complies with ASME
at normal vacuum loss.
He ventingupon
vacuum failure
For sudden huge vacuum loss, we are now working on reconstructing the cryostat.
P = 4 UCN/cm3·s at Ec = 210 neV, Ep×Ip = 0.4 kW (2012)→ 200 UCN/cm3·s in 12 L He-II 20 kWτs = 81 s (2012) → 100 s
Statistical error: 10-27~10-28 e cm 1. He-II UCN production in spallation n source
2. Magnetic extraction of UCN from He-II
Systematic error: 10-27 e cm 3. 129Xe co-magnetometer
PUCN = 90% at the EDM cellvisibility α = 83 %
Our nEDM
ρpol = 800 UCN/cm3 in the EDM cell of Ec = 90 neV
Thanks