STR-S6411 STR-S6411F - ic72.com · Operating Temperature Range, T A ... STR-S6411F STR-S6411 AND...
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DISCONTIN
UED PRODUCT
— FOR R
EFERENCE ONLY
Data S
heet28101.1
STR-S6411 ANDSTR-S6411F
These devices are specifically designed to meet the requirementsfor increased integration and reliability in off-line flyback (STR-S6411)and forward (STR-S6411F) converters operating in a fixed-frequencyPWM mode. Each device incorporates the primary control and drivecircuits with an avalanche-rated high-voltage power MOSFET. Crucialsystem parameters such as switching frequency and maximum dutycycle are fixed during manufacture. The STR-S6411 and STR-S6411Fdiffer only in their maximum duty cycle. Control circuit decoupling andlayout are optimized within each device.
Cycle-by-cycle and average-current limiting, soft start, under-voltage lockout with hysteresis, and thermal shutdown protect thedevice during all normal and overload conditions. The performance andreliability of these devices, and their variable-frequency counterparts,has been proven in substantial volume production.
The requirements of high dielectric isolation and low transientthermal impedance and steady-state thermal resistance are satisfied inan over-molded, 9-pin single in-line power package.
FEATURES
PWM Flyback Conversion or Forward Conversion
Output Power to 250 W
Pulse-by-Pulse Current Limiting
Fixed-Frequency 100 kHz PWM
Avalanche-Rated Power MOSFET Switch
Soft Start
Internal Under-Voltage Lockout and Thermal Shutdown
Low External Component Count
Over-Molded SIP with Isolated Heat Spreader
Always order by complete part number:
STR-S6411 or STR-S6411F .
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VIN ............................ 35 VDrain-Source Voltage, VDS ............... 800 VDrain Current, ID
continuous ..................................... ±5 Asingle pulse, tw ≤1 ms .................. ±20 A
Avalanche Energy, EAsingle pulse ............................... 400 mJ
Gate-Source Voltage, VGS ................ ±20 VGate-Drive Current Range,
IG ................................. -0.7 A to +1.5 AOver-Current Protection Voltage Range,
VOCP ............................. -0.3 V to +4.0 VInsulation RMS Voltage,
VWM(RMS) ..................................... 2000 VPackage Power Dissipation,
PD ........................................ See GraphFET Channel Temperature, TJ ...... +150°CInternal Frame Temperature, TF ... +125°COperating Temperature Range,
TA ............................... -20°C to +125 °CStorage Temperature Range,
Tstg ............................. -30°C to +125 °C
+
SOURCE
DRAIN
UVLO
SIGNALGROUND
V IN
OVER-CURRENTPROTECTION
Dwg. PK-003
SOFTSTART
+
GATE
FDBK
PWM
POWERGROUND
LATCH
REF.
1
2
3
4
5
6
7
8
9
OSC.
OFF-LINE SWITCHING REGULATORS– WITH POWER MOSFET OUTPUT
™
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000
™
FUNCTIONAL BLOCK DIAGRAM
ALLOWABLE PACKAGE POWER DISSIPATION MAXIMUM SAFE OPERATING AREA
OSC.
S
Q
SOURCE
DRAIN
LATCH
1
2
UVLO
SIGNALGROUND
4
V IN
OVER-CURRENTPROTECTION
Rton
REF.
7
6
8
Dwg. FK-003
SOFTSTART
5
0.2 V
+
GATE
3
FDBK
9
PWM
POWERGROUND
+
Rtoff
R
60
40
20
20 60 100
3.2 W
140
LIMITED BY FRAMETEMP. = +125°C MAX.
RECOMMENDED MAX.FRAME TEMP. = +100°C
FREE AIR
62 W
0
TEMPERATURE in °C
AL
LO
WA
BL
E P
AC
KA
GE
PO
WE
R D
ISS
IPA
TIO
N in
WA
TT
S
MOUNTING SURFACETEMPERATURE
Dwg. GK-003
100
10
1.0
0.1
DRAIN-TO-SOURCE VOLTAGE in VOLTS
DR
AIN
CU
RR
EN
T in
AM
PE
RE
S
Dwg. GK-004-1
0.3
3.0
30
3.0 10 30 100 300
NO HEAT SINKNATURAL COOLINGT = +25°CA
t = 10 ms SINGLE PULSE
w
t = 1 ms SINGLE PULSE
w
1000
t = 0.1 ms SINGLE PULSE
w
LIM
ITE
D B
Y V
max
DS
LIMITEDBY r DS(on)
Copyright © 1994 Allegro MicroSystems, Inc.
ALLOWABLE AVALANCHE ENERGY
ELECTRICAL CHARACTERISTICS at TA = +25°C, VIN = 17 V, voltage measurements are referenced toSignal Ground (pin 8) (unless otherwise noted).
Limits
Characteristic Symbol Test Conditions Min. Typ. Max. Units
On-State Voltage VINT Turn-on, increasing VIN 14.4 16 17.6 V
Under-Voltage Lockout VINQ Turn-off, decreasing VIN 8.4 9.4 10.4 V
FET Leakage Current IDSS VDS = 800 V – – 1.2 mA
FET ON Resistance rDS(on) VGS = 10 V, ID = 3 A – 1.8 2.2 ΩForward Transconductance gfs VGS = 10 V, ID = 3 A 3.0 – – S
FET Input Capacitance Ciss VDS=10 V, VGS=0 V, f=1 MHz – 1800 – pF
Propagation Delay Time tphl Turn-on, 10% VGS to 10% VDS – 60 – ns
tplh Turn-off, 90% VGS to 90% VDS – 140 – ns
Oscillator Frequency fosc 93 100 107 kHz
Maximum ON Time ton STR-S6411 5.1 5.7 6.5 µs
STR-S6411F 3.8 4.5 5.2 µs
Over-Current Threshold VOCP(th) 160 200 240 mV
OCP Current IOCP -250 -400 -550 µA
Feedback Current IFDBK – -1.8 – mA
Soft Start Threshold Voltage VSS(th) – – 0.4 V
Soft Start Current ISS VSS = 0 V – -100 – µA
Power Ground Current IPG tw = 200 ns – -1.0 -1.5 A
Supply Current IIN(ON) Operating – 23 – mA
IIN(OFF) Start up, VIN = 12 V – – 500 µA
Insulation RMS Voltage VWM(RMS) All terminals simultaneous reference 2000 – – V
metal plate against backside
Thermal Resistance RθJM FET channel to mounting surface – 2.0 – °C/W
NOTES: Negative current is defined as coming out of (sourcing) the specified device terminal.Typical Data is for design information only.
600
400
200
0 60 100 140
100
STARTING CHANNEL TEMPERATURE in °C
AL
LO
WA
BL
E A
VA
LA
NC
HE
EN
ER
GY
in m
J
Dwg. GK-009-1
300
500
020 40 80 120 160
SINGLE PULSEDRAIN CURRENT = 5 ASUPPLY VOLTAGE = 50 V
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000
™
TYPICAL CHARACTERISTICS
160
120
80
-20 40 80 120
60
AMBIENT TEMPERATURE in °C
OS
CIL
LA
TO
R F
RE
QU
EN
CY
in k
Hz
Dwg. GK-005
100
140
400 20 60 100 140
35
25
15
0 15 25 35
10
INPUT VOLTAGE in VOLTS
OP
ER
AT
ING
SU
PP
LY
CU
RR
EN
T in
mA
Dwg. GK-006
20
30
5
5 10 20 30 40
T = +100°CA
T = +25°CA
T = -20°CA
VINT
VINQ
0
300
200
100
-20 40 80 120
50
AMBIENT TEMPERATURE in °C
OV
ER
-CU
RR
EN
T T
HR
ES
HO
LD
VO
LT
AG
E in
mV
Dwg. GK-007
150
250
00 20 60 100 140
TYPICAL PWM FLYBACK CONVERSION USING STR-S6411WARNING: lethal potentials are present. See text.
TYPICAL PWM FORWARD CONVERSION USING STR-S6411FWARNING: lethal potentials are present. See text.
NC
1
2
4
7
85
39
6+
VOLTAGESENSE
FU
LL-B
RID
GE
RE
CT
IFIE
R
AC
INP
UT
220
V/2
40 V
+ OUTPUT
– OUTPUT
+
+
+
Dwg. EK-003-2
STR-S6411
NC
1
2
4
7
85
39
6+
VOLTAGESENSE
FU
LL-B
RID
GE
RE
CT
IFIE
R
AC
INP
UT
220
V/2
40 V
+ OUTPUT
– OUTPUT
+
+
+
Dwg. EK-003-3
STR-S6411F
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000
™
NOTE: Exact body and lead configuration at vendor’s option within limits shown.
APPLICATIONS INFORMATION
WARNING — These devices are designed to be operated at lethal voltages and energy levels.Circuit designs that embody these components must conform with applicable safety requirements.Precautions must be taken to prevent accidental contact with power-line potentials.Do not connect grounded test equipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
The power MOSFET outputs of these devices are similar to the International Rectifier type IRFPE40. These devicesfeature an excellent combination of fast switching, ruggedized device design, low on-resistance, and cost effectiveness.
Recommended mounting hardware torque:4.34 - 5.79 lbf•ft (6 – 8 kg•cm or 0.588 – 0.784 Nm).
Recommended metal-oxide-filled, alkyl-degenerated oil base, silicone grease:Dow Corning 340, or equivalent
Dimensions in Inches(for reference only)
0.276±0.016
Dwg. MK-003-9 in
0.953 ±0.008
0.610±0.008
0.1180.130±0.008
ø
1.49
±0.
012
0.016 0.100±0.004
0.70
9 ±0
.008
0.216±0.008
0.216
0.130±0.004
0.026+0.008–0.004
0.177±0.028
PACKAGECENTER
LEADCENTER
1 9
0.033+0.008–0.004
T REF.M
Dimensions in Millimeters(controlling dimensions)
NOTE: Exact body and lead configuration at vendor’s option within limits shown.
Dwg. MK-003-9 mm
24.2 ±0.2
15.5 ±0.2
3.03.3±0.2
ø
23.0
±0.
3
0.4 2.54±0.1
18.0
±0.
2
5.5±0.2
7.0±0.4
5.5
3.3±0.1
0.65+0.2–0.1 4.5
±0.7
PACKAGECENTER
LEADCENTER
1 9
0.85+0.2–0.1
T REFM
The products described here are manufactured in Japan by Sanken Electric Co.,Ltd. for sale by Allegro MicroSystems, Inc.
Sanken Electric Co., Ltd. and Allegro MicroSystems, Inc. reserve the right tomake, from time to time, such departures from the detail specifications as may berequired to permit improvements in the design of their products.
The information included herein is believed to be accurate and reliable.However, Sanken Electric Co., Ltd. and Allegro MicroSystems, Inc. assume noresponsibility for its use; nor for any infringements of patents or other rights of thirdparties which may result from its use.
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
STR-S6411 AND STR-S6411FOFF-LINESWITCHING REGULATORS
115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000
™
POWER CONVERSION/POWER MANAGEMENTSELECTION GUIDES
SWITCHING REGULATOR PMCMs
PartNumber* Application VI Max PO Power Switch
3002M 5 V Switching Regulator and a 7.0-33 V – – 500 mA Bipolar9 V Switching Regulator† – 400 mA Bipolar
3004M 5 V Switching Regulator and 7.0-33 V – – 500 mA BipolarDual 9 V Switching Regulator – 2 x 400 mA Bipolar
S5703 Quasi-Resonant Flyback Converter 110/120 V 140 W 500 V 6 A Bipolar
S5707 Quasi-Resonant Flyback Converter 85-265 V 90 W 850 V 6 A Bipolar220/240V 140 W
S5708 Quasi-Resonant Flyback Converter 85-265 V 120 W 850 V 7.5 A Bipolar220/240 V 180 W
F6624 Quasi-Resonant Flyback Converter 100/120 V 130 W 450 V 0.92 Ω MOSFET
F6626 Quasi-Resonant Flyback Converter 100/120 V 190 W 450 V 0.58 Ω MOSFET
F6628 Quasi-Resonant Flyback Converter 100/120 V 290 W 450 V 0.35 Ω MOSFET
F6652 Quasi-Resonant Flyback Converter 85-265 V 86 W 650 V 2.8 Ω MOSFET
F6653 Quasi-Resonant Flyback Converter 85-265 V 120 W 650 V 1.95 Ω MOSFET
F6654 Quasi-Resonant Flyback Converter 85-265 V 190 W 650 V 1.15 Ω MOSFET
F6656 Quasi-Resonant Flyback Converter 85-265 V 300 W 650 V 0.71 Ω MOSFET
F6672 Quasi-Resonant Flyback Converter 200/220 V 50 W 900 V 7.7 Ω MOSFET
F6674 Quasi-Resonant Flyback Converter 85-265 V 76 W 900 V 4.49 Ω MOSFET
F6676 Quasi-Resonant Flyback Converter 85-265 V 115 W 900 V 2.81 Ω MOSFET
S6703 Quasi-Resonant Flyback Converter 110/120V 140 W 500 V 6 A Bipolar
S6704 Quasi-Resonant Flyback Converter 110/120 V 100 W 500 V 5 A Bipolar
S6707 Quasi-Resonant Flyback converter 85-265 V 90 W 850 V 6 A Bipolar220/240 V 140 W
S6708 Quasi-Resonant Flyback Converter 85-265 V 120 W 850 V 7.5 A Bipolar220/240 V 180 W
S6709 Quasi-Resonant Flyback Converter 85-265 V 160 W 850 V 10 A Bipolar220/240 V 220 W
8033S 3.3 V Switching Regulator 5.5-28 V – – 3 A Bipolar
8050S 5.0 V Switching Regulator 7.0-40 V – – 3 A Bipolar
8090S 9.0 V Switching Regulator 12-40V – – 3 A Bipolar
8120S 12 V Switching Regulator 15-40 V – – 3 A Bipolar
8150S 15 V Switching Regulator 18-40 V – – 3 A Bipolar
* Complete part number includes additional characters to indicate operating temperature range and/or package style.
† Also includes linear regulator output for 15.7 V at 1.0 A.
POWER CONVERSION/POWER MANAGEMENTSELECTION GUIDES (CONTINUED)