RGS60TS65D : IGBT - Rohmrohmfs.rohm.com/.../databook/datasheet/discrete/igbt/rgs60ts65d-e.pdf · 0...

Data Sheet

www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

RGS60TS65D 650V 30A Field Stop Trench IGBT

*1 Pulse width limited by Tjmax.

lFeatures lInner Circuit

lOutline

VCES 650V TO-247N

IC(100°C) 30A

VCE(sat) (Typ.) 1.65V

PD 223W

1) Low Collector - Emitter Saturation Voltage

2) Short Circuit Withstand Time 8μs

3) Qualified to AEC-Q101

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

lPackaging Specifications

Type

Packaging TubelApplications

Reel Size (mm) -General Inverter

Tape Width (mm) - for Automotive and Industrial Use

Basic Ordering Unit (pcs) 450

Packing Code C11

Marking RGS60TS65D

lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)

Parameter Symbol Value Unit

Collector - Emitter Voltage VCES 650 V

Gate - Emitter Voltage VGES 30 V

Collector CurrentTC = 25°C IC 56 A

TC = 100°C IC 30 A

Pulsed Collector Current ICP*1 90 A

Diode Forward CurrentTC = 25°C IF 56 A

TC = 100°C IF 30 A

Diode Pulsed Forward Current IFP*1 90 A

Power DissipationTC = 25°C PD 223 W

TC = 100°C PD 111 W

Operating Junction Temperature Tj -40 to +175 °C

Storage Temperature Tstg -55 to +175 °C

(1) Gate (2) Collector (3) Emitter

*1

*1 Built in FRD

(1)

(2)

(3)

(1) (2) (3)

1/11 2016.07 - Rev.A


Data SheetRGS60TS65D

lThermal Resistance

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

VCE = 650V, VGE = 0V

Parameter SymbolValues

UnitMin. Typ. Max.

°C/W

Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17

Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.67

UnitMin. Typ. Max.

°C/W

5

Parameter Symbol ConditionsValues

200

V

Collector Cut - off Current ICES - -

Collector - Emitter Breakdown

VoltageBVCES IC = 10μA, VGE = 0V 650 - -

Tj = 25°C

Tj = 175°C

10

Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - -

Gate - Emitter Threshold

VoltageVGE(th) VCE = 5V, IC = 1.5mA 5.0 6.0

Collector - Emitter Saturation

VoltageVCE(sat)

IC = 30A, VGE = 15V

μA

mA

VTj = 25°C - 1.65 2.10

Tj = 175°C - 2.15 -

nA

7.0 V

2/11 2016.07 - Rev.A



lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

*2 Design assurance without measurement


UnitMin. Typ. Max.

pFOutput Capacitance Coes VGE = 0V - 80 -

Reverse Transfer Capacitance Cres f = 1MHz

Input Capacitance Cies VCE = 30V - 980 -

- 13 -

Total Gate Charge Qg VCE = 300V - 36 -

nCGate - Emitter Charge Qge IC = 30A - 10 -

Gate - Collector Charge Qgc VGE = 15V - 15 -

Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 28 -

nsRise Time tr VGE = 15V, RG = 10Ω - 12 -

Turn - off Delay Time td(off) Tj = 25°C

IC = 30A, VCC = 400V - 29 -

- 104 -

Fall Time tf Inductive Load - 101 -

Turn - on Switching Loss Eon *Eon includes diode - 0.66 -

Reverse Bias Safe Operating Area RBSOA

IC = 90A, VCC = 520V

FULL SQUARE -VP = 650V, VGE = 15V

RG = 50Ω, Tj = 175°C

- 131 -

Fall Time tf Inductive Load - 159 -

nsRise Time tr VGE = 15V, RG = 10Ω - 17 -

Turn - off Delay Time

mJTurn - off Switching Loss Eoff reverse recovery - 0.81 -

Turn - on Switching Loss Eon *Eon includes diode - 0.88 -mJ

Turn - off Switching Loss Eoff reverse recovery - 1.13 -

td(off) Tj = 175°C

Turn - on Delay Time td(on)

μs

VCC ≦ 360Vμs

VGE = 15V, Tj = 150°CShort Circuit Withstand Time tsc

*2 6 - -

VCC ≦ 360V

VGE = 15V, Tj = 25°CShort Circuit Withstand Time tsc 8 - -

3/11 2016.07 - Rev.A



lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)

VCC = 400V

diF/dt = 200A/μs

Tj = 25°C

VCC = 400V

diF/dt = 200A/μs

Tj = 175°C


UnitMin. Typ. Max.

Diode Forward Voltage VF

IF = 30A

VTj = 25°C - 1.45 1.90

Tj = 175°C - 1.55 -

ns

Diode Peak Reverse Recovery

CurrentIrr

IF = 30A- 7.1 - A

Diode Reverse Recovery Time trr - 103 -

-

trr - 242 -

Diode Reverse Recovery Energy Err - 15

- μJ

Diode Peak Reverse Recovery

CurrentIrr

IF = 30A- 9.8 -

Diode Reverse Recovery Energy Err - 113

- μC

μC

Diode Reverse Recovery

ChargeQrr - 1.3

A

μJ

Diode Reverse Recovery Time

Diode Reverse Recovery

ChargeQrr - 0.4 -

ns

4/11 2016.07 - Rev.A



lElectrical Characteristic Curves

　

0

20

40

60

80

100

120

140

160

180

200

220

240

0 25 50 75 100 125 150 175

0

20

40

60

80

100

120

0 200 400 600 800

Tj≦175ºC

VGE=15V

0

10

20

30

40

50

60

0 25 50 75 100 125 150 175

Tj≦175ºC

VGE≧15V

0.01

0.1

1

10

100

1000

1 10 100 1000

10µs

TC= 25ºC Single Pulse

100µs

Fig.2 Collector Current vs. Case Temperature

Colle

cto

r C

urr

ent

: I C

[A

]

Case Temperature : TC [ºC]

Colle

cto

r C

urr

ent

: I C

[A

]

Collector To Emitter Voltage : VCE[V]

Fig.4 Reverse Bias Safe Operating Area

Colle

cto

r C

urr

ent

: I C

[A

]


Fig.1 Power Dissipation vs. Case Temperature

Pow

er

Dis

sip

ation :

PD [

W]

Case Temperature : TC [ºC]

Fig.3 Forward Bias Safe Operating Area

5/11 2016.07 - Rev.A




0

15

30

45

60

75

90

0 1 2 3 4 5

Tj= 175ºC

VGE= 20V

VGE= 12V

VGE= 10V

VGE= 8V

VGE= 15V

0

15

30

45

60

75

90

0 1 2 3 4 5

Tj= 25ºC

VGE= 20V

VGE= 15V VGE= 12V

VGE= 10V

VGE= 8V

0

10

20

30

40

50

60

0 2 4 6 8 10 12 14

VCE= 10V

Tj= 25ºC

Tj= 175ºC

0

1

2

3

4

25 50 75 100 125 150 175

IC= 60A

IC= 15A

IC= 30A

VGE= 15V

Fig.5 Typical Output Characteristics

Colle

cto

r C

urr

ent

: I C

[A

]


Fig.6 Typical Output Characteristics

Co

llecto

r C

urr

en

t :

I C [

A]


Fig.7 Typical Transfer Characteristics

Colle

cto

r C

urr

ent

: I C

[A

]

Gate To Emitter Voltage : VGE [V]

Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature

Colle

cto

r T

o E

mitte

r S

atu

ration V

oltage

: V

CE

(sa

t) [V

]

Junction Temperature : Tj [ºC]

6/11 2016.07 - Rev.A




0

5

10

15

20

5 10 15 20

Tj= 25ºC

IC= 60A

IC= 15A

IC= 30A

0

5

10

15

20

5 10 15 20

Tj= 175ºC

IC= 60A

IC= 15A

IC= 30A

1

10

100

1000

0 10 20 30 40 50 60

tf

VCC=400V, VGE=15V RG=10Ω, Tj=175ºC

Inductive ｌoad

td(off)

td(on)

tr

1

10

100

1000

0 10 20 30 40 50

tf

td(off)

td(on)

tr

VCC=400V, IC=30A VGE=15V, Tj=175ºC

Inductive ｌoad

Colle

cto

r T

o E

mitte

r S

atu

ration V

oltage

: V

CE

(sa

t) [V

]


Colle

cto

r T

o E

mitte

r S

atu

ration V

oltage

: V

CE

(sa

t) [V

]


Sw

itchin

g T

ime [ns]

Collector Current : IC [A]

Fig.12 Typical Switching Time vs. Gate Resistance

Sw

itchin

g T

ime [ns]

Gate Resistance : RG [Ω]

Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage

Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage

Fig.11 Typical Switching Time vs. Collector Current

7/11 2016.07 - Rev.A




0.01

0.1

1

10

0 10 20 30 40 50 60

Eoff

VCC=400V, VGE=15V RG=10Ω, Tj=175ºC

Inductive ｌoad

Eon

1

10

100

1000

10000

0.01 0.1 1 10 100

Cies

f=1MHz VGE=0V Tj=25ºC

Coes

Cres

0.01

0.1

1

10

0 10 20 30 40 50

Eoff

Eon

VCC=400V, IC=30A VGE=15V, Tj=175ºC

Inductive ｌoad

0

5

10

15

0 10 20 30 40

IC=30A Tj=25ºC

200V

300V

400V

Fig.13 Typical Switching Energy Losses vs. Collector Current

Sw

itchin

g E

nerg

y Losses [m

J]

Collector Current : IC [A]

Fig.14 Typical Switching Energy Losses vs. Gate Resistance

Sw

itchin

g E

nerg

y Losses [m

J]

Gate Resistance : RG [Ω]

Fig.15 Typical Capacitance vs. Collector To Emitter Voltage

Capacitance [

pF

]


Fig.16 Typical Gate Charge

Gate

To E

mitte

r V

oltage :

VG

E [V

]

Gate Charge : Qg [nC]

8/11 2016.07 - Rev.A




0

15

30

45

60

75

90

0 0.5 1 1.5 2 2.5 3

Tj= 175ºC

Tj= 25ºC

0

100

200

300

400

0 10 20 30 40 50 60

VCC=400V diF/dt=200A/µs

Inductive ｌoad

Tj= 175ºC

Tj= 25ºC

0

5

10

15

20

0 10 20 30 40 50 60

Tj= 175ºC

Tj= 25ºC VCC=400V

diF/dt=200A/µs

Inductive ｌoad

0

0.1

0.2

0.3

0.4

0.5

0.6

0 10 20 30 40 50 60

VCC=400V Tj= 175ºC

Inductive ｌoad

RG=10Ω

RG=20Ω

RG=50Ω

Fig.17 Typical Diode Forward Current vs. Forward Voltage

Forw

ard

Curr

ent

: I F

[A

]

Forward Voltage : VF[V]

Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current

Revers

e R

ecovery

Tim

e : t

rr [ns]

Forward Current : IF [A]

Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current

Revers

e R

ecovery

Curr

ent

: I r

r [A

]


Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current

Revers

e R

ecovery

Energ

y Losses

: E

rr [m

J]


9/11 2016.07 - Rev.A




0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1

D= 0.5 0.2

0.1

0.01

0.02

0.05

Single Pulse

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1

D= 0.5 0.2 0.1

0.01

0.02

0.05

Single Pulse

Fig.21 IGBT Transient Thermal Impedance

Tra

nsie

nt T

herm

al Im

pedance

: Z

thJC [ºC

/W]

Pulse Width : t1[s]

Fig.22 Diode Transient Thermal Impedance

Tra

nsie

nt T

herm

al Im

pedance

: Z

thJC [ºC

/W]

Pulse Width : t1[s]

t1

t2

PDM

Duty=t1/t2

Peak Tj=PDM×ZthJC+TC

t1

t2

PDM

Duty=t1/t2

Peak Tj=PDM×ZthJC+TC

C1 C2 C3 R1 R2 R31.266m 10.51m 49.06m 492.7m 364.8m 312.7m

C1 C2 C3 R1 R2 R32.929m 38.11m 93.59m 519.3m 136.2m 14.64m

10/11 2016.07 - Rev.A



lInductive Load Switching Circuit and Waveform

VG

D.U.T.

D.U.T.

IF

diF/dt

Irr

trr , Qrr

Fig.23 Inductive Load Circuit

Fig.24 Inductive Load Waveform Fig.25 Diode Reverce Recovery Waveform

tr

toff

10%

90%

tf td(on)

td(off)

Gate Drive Time

VCE(sat)

10%

90%

ton

VGE

IC

VCE

Eon

10%

Eoff

11/11 2016.07 - Rev.A

R1102Bwww.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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