FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Publication Order Number:FGH40T120SMD/D

©2013 Semiconductor Components Industries, LLC.August-2017, Rev. 3

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Notes:1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 Ω, Inductive Load2. Limited by Tjmax

Symbol Description Ratings UnitVCES Collector to Emitter Voltage 1200 V

VGESGate to Emitter Voltage ±25 V

Transient Gate to Emitter Voltage ±30 V

ICCollector Current @ TC = 25oC 80 A

Collector Current @ TC = 100oC 40 A

ILM (1) Clamped Inductive Load Current @ TC = 25oC 160 A

ICM (2) Pulsed Collector Current 160 A

IFDiode Continuous Forward Current @ TC = 25oC 80 A

Diode Continuous Forward Current @ TC = 100oC 40 A

IFM Diode Maximum Forward Current 240 A

PDMaximum Power Dissipation @ TC = 25oC 555 W

Maximum Power Dissipation @ TC = 100oC 277 W

TJ Operating Junction Temperature -55 to +175 oC

Tstg Storage Temperature Range -55 to +175 oC

TLMaximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds 300 oC

Symbol Parameter Typ. Max. Unit

RJC(IGBT) Thermal Resistance, Junction to Case -- 0.27 oC/W

RJC(Diode) Thermal Resistance, Junction to Case -- 0.89 oC/W

RJA Thermal Resistance, Junction to Ambient -- 40 oC/W

G

C

E

COLLECTOR(FLANGE)

EC

G

FGH40T120SMD / FGH40T120SMD-F1551200 V, 40 A FS Trench IGBT

Features • FS Trench Technology, Positive Temperature Coefficient

• High Speed Switching

• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A

• 100% of the Parts tested for ILM(1)

• High Input Impedance

• RoHS Compliant

Applications• Solar Inverter, Welder, UPS & PFC applications.

General Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity

FGH40T120SMD FGH40T120SMD TO-247 A03 - - 30

FGH40T120SMD FGH40T120SMD-F155 TO-247G03 - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V

ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA

IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V

VCE(sat) Collector to Emitter Saturation Voltage

IC = 40 A, VGE = 15 VTC = 25oC

- 1.8 2.4 V

IC = 40 A, VGE = 15 V, TC = 175oC - 2.0 - V

Dynamic Characteristics

Cies Input CapacitanceVCE = 30 V, VGE = 0 V, f = 1MHz

- 4300 - pF

Coes Output Capacitance - 180 - pF

Cres Reverse Transfer Capacitance - 100 - pF

Switching Characcteristics

td(on) Turn-On Delay Time

VCC = 600 V, IC = 40 A,RG = 10 , VGE = 15 V,Inductive Load, TC = 25oC

- 40 - ns

tr Rise Time - 47 - ns

td(off) Turn-Off Delay Time - 475 - ns

tf Fall Time - 10 - ns

Eon Turn-On Switching Loss - 2.7 - mJ

Eoff Turn-Off Switching Loss - 1.1 - mJ

Ets Total Switching Loss - 3.8 - mJ

td(on) Turn-On Delay Time

VCC = 600 V, IC = 40 A,RG = 10 , VGE = 15 V,Inductive Load, TC = 175oC

- 40 - ns

tr Rise Time - 55 - ns

td(off) Turn-Off Delay Time - 520 - ns

tf Fall Time - 50 - ns

Eon Turn-On Switching Loss - 3.4 - mJ

Eoff Turn-Off Switching Loss - 2.5 - mJ

Ets Total Switching Loss - 5.9 - mJ

Qg Total Gate ChargeVCE = 600 V, IC = 40 A,VGE = 15 V

- 370 - nC

Qge Gate to Emitter Charge - 23 - nC

Qgc Gate to Collector Charge - 210 - nC

wwww.onsemi.com2

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Electrical Characteristics of the DIODE TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VFM Diode Forward Voltage IF = 40 A, TC = 25oC - 3.8 4.8 V

IF = 40 A, TC = 175oC - 2.7 - V

trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A,diF/dt = 200 A/us, TC = 25oC

- 65 - ns

Irr Diode Peak Reverse Recovery Current - 7.2 - A

Qrr Diode Reverse Recovery Charge - 234 - nC

trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A,diF/dt = 200 A/us, TC = 175oC

- 200 - ns

Irr Diode Peak Reverse Recovery Current - 18.0 - A

Qrr Diode Reverse Recovery Charge - 1800 - nC

wwww.onsemi.com3

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

0 1 2 3 4 5 6 7 8 9 100

50

100

150

200

250

300

VGE=10V

20V 15V

12V

17VTC = 25oC

Co

llect

or

Cu

rren

t, I C

[A

]

Collector-Emitter Voltage, VCE [V]

0 1 2 3 4 5 6 7 8 9 100

50

100

150

200

250

300

VGE=10V

20V

15V

12V

17VTC = 175oC

Co

llect

or

Cu

rren

t, I C

[A

]

Collector-Emitter Voltage, VCE [V]

25 50 75 100 125 150 1751

2

3

4

80A

IC=20A

40A

Common EmitterVGE = 15V

Co

llect

or

Em

itte

r V

olt

age,

VC

E [

V]

Case Temperature TC [oC]

0 1 2 3 4 50

40

80

120

160Common EmitterVGE = 15V

TC = 25oC

TC = 175oC ---

Co

llect

or

Cu

rren

t, I C

[A

]

Collector-Emitter Voltage, VCE [V]

0 4 8 12 16 200

4

8

12

16

20

80A

IC=20A

40A

Common Emitter

TC = 25oC

Co

llect

or

Em

itte

r V

olt

ag

e, V

CE [

V]

Gate-Emitter Voltage, VGE [V]0 4 8 12 16 20

0

4

8

12

16

20

80A

IC=20A

40A

Common Emitter

TC = 175oC

Co

llect

or

Em

itte

r V

olt

ag

e, V

CE [

V]

Gate-Emitter Voltage, VGE [V]

wwww.onsemi.com4

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Load Current vs. Frequency

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs. Gate Resistance Gate Resistance

Figure 11. Swithcing Loss vs. Figure 12. Turn-on Characteristics vs. Gate Resistance Collector Current

1

1000

2000

3000

4000

5000

6000

Ciss

Crss

Coss

10

Common EmitterVGE = 0V , f = 1MHz

TC = 25oC

Cap

pa

cita

nce

[p

F]

Collector-Emitter Voltage, VCE [V]1k 10k 100k 1M

0

40

80

120

160

200

Duty cycle : 50%

TC = 100o

C

Powe Dissipation = 277 W

VCC = 600V

load Current : peak of square wave

TC = 100oC

Co

llect

or

Cu

rren

t, I C

[A

]

Switching Frequency, f [Hz]

0 10 20 30 40 501

10

100

1000

Sw

itc

hin

g T

ime

[n

s]

Common EmitterVCC = 600V, VGE = 15V

IC = 40A

TC = 25oC

TC = 175oC

td(on)

tr

Gate Resistance, RG []

0 10 20 30 40 50 60 701

10

100

1000

Common EmitterVCC = 600V, VGE = 15V, IC = 40A

TC = 25oC , TC = 175oC

td(off)

tf

Sw

itc

hin

g T

ime

[n

s]

Gate Resistance, RG []

10 20 30 40 50 60 70 80

10

100

Common EmitterVGE = 15V, RG = 10

TC = 25oC

TC = 175oC

tr

td(on)

Sw

itc

hin

g T

ime

[n

s]

Collector Current, IC [A]

0 10 20 30 40 50 60 70

0.1

1

10

Common EmitterVCC = 600V, VGE = 15V

IC = 40A

TC = 25oC

TC = 175oC

Eon

Eoff

Sw

itc

hin

g L

os

s [

mJ

]

Gate Resistance, RG []

wwww.onsemi.com5

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Swithcing Loss vs. Collector Current Collector Current

Figure 15. Gate Charge Characteristics Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

10 20 30 40 50 60 70 800.1

1

10

30

Common EmitterVGE = 15V, RG = 10

TC = 25oC

TC = 175oC

Eon

Eoff

Sw

itc

hin

g L

os

s [

mJ

]Collector Current, IC [A]

20 40 60 801

10

100

1000

Common EmitterVGE = 15V, RG = 10

TC = 25oC , TC = 175oC

td(off)

tf

Sw

itc

hin

g T

ime

[n

s]

Collector Current, IC [A]

0 50 100 150 200 250 300 350 4000

3

6

9

12

15

200V 400V

VCC = 600V

Common Emitter

TC = 25oC

Gat

e E

mit

ter

Vo

ltag

e, V

GE [

V]

Gate Charge, Qg [nC]

0.1 1 10 100 10000.01

0.1

1

10

100

IcMAX (Continuous)

IcMAX (Pulsed)

1ms10 ms

DC Operation

Single Nonrepetitive

Pulse Tc = 25oCCurves must be deratedlinearly with increasein temperature

10s

100s

Co

llect

or

Cu

rre

nt,

Ic

[A]

Collector-Emitter Voltage, VCE [V]

0 1 2 3 4 51

10

100

TC = 25oC

TC = 175oC ---

Fo

rwar

d C

urr

ent,

I F [

A]

Forward Voltage, VF [V]0 10 20 30 40 50 60 70 80

2

4

6

8

10

VR = 600 V, IF = 40 A

TC = 25oC

diF/dt = 100 A/s

Rev

erse

Rec

ove

ry C

urr

net

, I rr

[A

]

Foward Current, IF [A]

diF/dt = 200 A/s

wwww.onsemi.com6

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

Figure 21. Transient Thermal Impedance of IGBT

0 10 20 30 40 50 60 70 8050

60

70

80

90

100

VR = 600 V, IF = 40 A

TC = 25oC

diF/dt = 200 A/s

diF/dt = 100 A/s

Rev

ers

e R

eco

ver

y T

ime

, trr [

ns]

Forward Current, IF [A]

0 10 20 30 40 50 60 70 800

100

200

300

400

VR = 600 V, IF = 40 A

TC = 25oC

diF/dt = 200 A/s

diF/dt = 100 A/s

Sto

red

Re

cove

ry C

ha

rge,

Qrr [

nC

] Forwad Current, IF [A]

1E-6 1E-5 1E-4 1E-3 0.01 0.1 11E-3

0.01

0.1

1

0.01

0.02

0.1

0.05

0.3

single pulse

Th

erm

al R

esp

on

se [

Zth

jc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.5

t1

PDM

t2

wwww.onsemi.com7

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Mechanical Dimensions

TO - 247A03

wwww.onsemi.com8

FG

H40T

120SM

D / F

GH

40T120S

MD-F

155 1200 V, 40 A

FS

Tren

ch IG

BT

Mechanical Dimensions

TO-247G03

wwww.onsemi.com9

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

© Semiconductor Components Industries, LLC