R41 A SAR-ΔΣADC with Dynamic Integrator for Low … Workshops/2017 Workshop… ·  ·...

18
A SAR-ΔΣADC with Dynamic Integrator for Low-Noise CMOS Image Sensors Akira Matsuzawa and Masaya Miyahara Tokyo Institute of Technology R41

Transcript of R41 A SAR-ΔΣADC with Dynamic Integrator for Low … Workshops/2017 Workshop… ·  ·...

A SAR-ΔΣADC with Dynamic Integrator for Low-Noise CMOS Image Sensors

Akira Matsuzawa and Masaya Miyahara

Tokyo Institute of Technology

R41

1Contents

• Performance limitation of the SS ADC• General purpose SAR+ΔΣADC• Proposed SAR+ΔΣADC for CIS

– Multiple sampling– CDS and ΔΣ ADC (Avoid Capacitor mismatch)

• Proposed open loop dynamic integrator– Open loop integrator– Dynamic amplifier

• Performance– Simulated– Measured

• SummaryTokyo Tech. A. Matsuzawa

2Attention and apology

• In the proceeding, no simulated data and measured data but only estimated data are used.

• In my presentation, I will use the simulated data and the measured data. The estimated data will not be used, since the noise voltage in my estimation is very optimistic due to neglecting the noise of the integrator.

• I deeply apologize my mistake and your confusion.

Tokyo Tech. A. Matsuzawa

3

1

1

1

Noise of SS ADC

Tokyo Tech. A. Matsuzawa

Conversion frequency, fc (kHz)

Noi

se, V

n(μ

V, rm

s)

Pow

er d

issi

patio

n, P

d(μ

W)

Pd

fclk=2 GHzT=300 KVFS=1.0 VVL=0.5 VCL=0.5 pFIbias=10 μAγ=1.0

Vn

5.02

216 ⎟⎟

⎞⎜⎜⎝

⎛ ⋅=

Lcm

FSsncmp CVg

VfkTv γ

sns C

kTv 42 =

222

121

121

⎟⎟⎠

⎞⎜⎜⎝

⎛== FS

clk

sqnq V

ffVv

Vi1 Vi2S SCS CSCL

Vo

Ibias

gm gm

To the counter

can be canceled in CDS

SS ASDC has a noise limitation. The lowest is about 100 μV.

SS ADC [1]

[1] Oike, et al, JSC., April, 2017

1000

100

1010 100 1000

1000

100

10

4General purpose SAR+ΔΣADC

Reset SamplingSAR Conversion Integration

We have already developed a general purpose SAR+DS ADCto realize low noise and low energy operation.

[2] M. Miyahara, et al, CICC, April, 2017

Tokyo Tech. A. Matsuzawa

5FoM comparison

Tokyo Tech. A. Matsuzawa

10

100

1000

10 100 1000 10000

Wal

den

FoM

[fJ

/con

v.]

Bandwidth [kHz]

This work

140.0

150.0

160.0

170.0

180.0

190.0

10 100 1000 10000

Schr

eier

FoM

[dB

]

Bandwidth [kHz]

This work

⎟⎟⎠

⎞⎜⎜⎝

⎛+=

ds P

BWSNDRFoM log10

BWPFoM ENOBd

W 22 ⋅=

SS ADC [1]

Our developed ADC [2]

Our developed ADC [2]

SS ADC [1]

[2] M. Miyahara, et al, CICC, April, 2017

FoMs of the proposed SAR+DSADC attained 172 dB that ishighest, however that of the SS ADC is 162 dB.

[1] Oike, et al, JSC., April, 2017

Vn(rms)=22 μV~33μV

Low noise and low energy

( )cs EDRFoM 2log109 −−=or

Ec: conversion energy

6

∫ ∫

Proposed ADC for CIS

Tokyo Tech. A. Matsuzawa

CDAC

6b+shift

CDAC

Int. Int.

RST

DynamicComp.

Vin

Vref

Trig

LogicsControl

Oscillator

Dout

2

for SAR and S/H

Low power SAR ADC + low noise ΔΣ ADCThe quantization voltage for ΔΣ ADC is reduced by SAR ADC

1b+overlap

7ΔΣ ADC with multiple sampling

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Vin Vrefa1 a2

b

b

a1

a2

Cα( )Cα−1

( )Cα−1

Repeat

Vres

Signal sampling Residue generation

S/H 1 2 6 1 2 M

SAR ADC; 6 times ΔΣ ADC; m=32, 64, 128

Multi-samplingTrigger RST

After the SAR conversion, ΔΣ ADC is performed.The signal is sampled and the residue voltage is generated in CDAC using the converted data. Just the trigger pulse is required and the needed clock is generated internally.

8-10 ns

8CDS and ΔΣ ADC

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1

01

0

Vr(6) Vq_DS

VRST

Vin

Vs

LSB

Shift

△ΣADCOverlap

Correlated Double Sampling (CDS)

SAR ADC

Vq_DS=30mV

△ΣADC is performed in small Vq of 30 mV with overlapping.The effect of capacitor mismatch is avoided in CDS operationby fixing the CDAC condition for the small signal.

fix the CDAC condition

9Proposed open-loop Integrator

Phase: φ1Vout = Vout_n-1

Phase: φ1Vout = Vout_n-1

V1 = A1VinV2 = A2Vout_n-1

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10Proposed open-loop Integrator

Phase: φ1Vout = Vout_n-1

Phase: φ2Vout = Vout_n-1+Vin

Phase: φ1Vout = Vout_n-1

V1 = A1VinV2 = A2Vout_n-1

Phase: φ2Vout = (Vout_n-1+V1+V2)/3

A1=3, A2=2,Vout = Vout_n-1+Vin

The perfect integration can be realized

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11Dynamic amplifier

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Dynamic amplifier doesn’t consume any static power.Very low and clock scalable power can be realized.

3 to 5 times lower power or higher speed.

12

0

0

3

Simulated noise voltage in ΣΔ ADC

Tokyo Tech. A. Matsuzawa

Total noise

Quantizationnoise

Oversampling ratio, m

Thermalnoise

Noi

se v

olta

ge (μ

Vrm

s)

m=16

m=32m=64 m=128

VFS_DS=30 mVCs= 1 pF ( )

2_2

12

⎭⎬⎫

⎩⎨⎧

+=

mmV

V DSFSqne

snc mC

kTV 6.122 =

22ncqnent VVV +=

Quantization noise can be suppressed effectively byincreasing the oversampling ratio, m.Also, kT/C noise, source follower noise, and reference noise can be suppressed in multiple sampling.

Total noise

Thermalnoise

Quantizationnoise

32μV @m=641000

100

10

10 100 1000

1

13Layout of the ADC20μm

770μm

CDAC COMP LOGIC VCO 1st Integrator 2nd Integrator

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The ADC is designed in 65 nm CMOS technology

CDAC COMP LOGIC VCO

1st Integrator 2nd Integrator

14Measured noise voltage

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MeasuredADC for CIS

SimulatedMeasuredGeneral purpose ADC [2]

[2] M. Miyahara, et al, CICC, April, 2017

Measured noise is quite larger than that of the simulated. Our previous SAR+ΔΣADC realized much lower noise.We are now investigating the reason.

66 μV

24 μV

Measurement issue ?Background noise ?Transistor noise ?Crosstalk ?

Oversampling ratio, m

Noi

se v

olta

ge (μ

Vrm

s)

m=16

m=32m=64

m=128

1000

100

1010 100 1000

15Performance summary

Tokyo Tech. A. Matsuzawa

( )cs EDRFoM 2log109 −−=

Simulated FoMs is about 170 dB.However measured FoMs is about 160 dB.

ArchitectureTechnology [nm]Area [μm xμm]Supply voltage [V]Full scale voltage [V]Over samprimg ratio, m 32 64 128Max. conv. freq. fcm[MHz] 4 2 1Simulated noise voltage, Vn [μV, rms] 50 32 20Measured noise voltage, Vn [μV, rms] 110 85 66Simulated dynamic range, DR [dB] 86 89 94Measured dynamic range, DR [dB] 79 81 84Coversion energy, Ec [pJ] 300 600 1200Simurated FoMs [dB] 169 169 171Measured FoMs [dB] 162 161 161

SAR+∆Σ65

20 x 7701.01.0

16Summary

• We proposed a SAR+ΔΣADC architecture for low noise and low power CISs.– FoMs: SS ADC 162 dB SAR+ΔΣADC 172 dB

• We proposed the open loop integrator with dynamic amplifiers for the high speed and low power integrator in ΔΣ ADC.

• However measured noise voltage (66 μV)is quite larger than that of the simulated noisevoltage (22 μV). The measured FoMs is 10 dB lower than that of simulated one.

• Further investigation and re-design with optimization are required.

Tokyo Tech. A. Matsuzawa

17What is the difference ?

Tokyo Tech. A. Matsuzawa

General purpose [2]

This work for CIS

General purpose [2] This work for CISSignal: Samplig Full differential Single endedSignal: Integrator Full differential Full differentialCapacitance (pF): Sampling 10 1Capacitance (pF): Integrator 5 0.5Signal swing 2 Vpp 1 VQuantization voltage (mV) 16 32Order of integrator 3 2 (Incremental)