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  • AST-3415DSILICON PHOTOTRANSISTOR

    Features General Purpose NPN Photo Transistor

    Appearance of Wafer Die Outline

    Pad B : Base ElectrodeE : Emitter Electrode

    Absolute Maximum Ratings ( Ta = 25 )

    ITEM SPECIFICATIONWafer Size 5inch (125 0.5 )Wafer Thickness 28010Die Size 0.415 0.415Dicing Line 55

    MetalliazationTop AlBottom Ni-V-Ag

    Passivation Silicon Nitride

    Pad SizeBase 70 70Emitter 138 138

    Reject Ink Dot Size >80

    Parameter Symbol Maximun rating UnitCollector-Emitter Voltage VCEO 30 VEmitter-Collector Voltage V 5 V

    BE

    Electrical Characteristics ( Ta = 25 )

    Guaranteed Probed Electrical Characteristics ( Ta = 25 )

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    Emitter-Collector Voltage VECO 5 VJunction Temperature TJ 150

    Parameter Symbol Test Condition Min Typ Max UnitC-E Leakage Current ICEO VCE=10V 100 Spectrum Sensitivity 500 1,050 Peak Sensing Wavelength p 880

    Parameter Symbol Test Condition Min Max UnitC-E Voltage BVCEO ICE=500 50 VC-B Voltage BVCBO ICB=50 90 VE-B Voltage BVEBO IEB=50 6.5 VE-C Voltage BVECO IEC=50 6.7 VC-E Leakage Current ICEO VCE=10V 50 nAC-E Saturation Voltage VCES IC=5mA, IB=1mA 300 mVDC Current Gain 1 hFE1 VCE=10V, IC=1mA 340 1500 -DC Current Gain 2 hFE2 VCE=10V, IC=0.1mA 340 -Lineality hFE1/hFE2 1.3 -

    BE

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