BFP540F

Jan-28-20041

NPN Silicon RF Transistor

• For highest gain low noise amplifier at 1.8 GHz

• Outstanding Gms = 20 dB Noise Figure F = 0.9 dB

• Gold metallization for high reliability• SIEGET 45 - Line

TSFP-4

1

2

4

3

XYs

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration PackageBFP540F ATs* 1=B 2=E 3=C 4=E - - TSFP-4

* Pin configuration fixed relative to marking (see package picture)

Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage VCEO 4.5 V

Collector-emitter voltage VCES 14

Collector-base voltage VCBO 14

Emitter-base voltage VEBO 1

Collector current IC 80 mA

Base current IB 8

Total power dissipation1) TS ≤ 80°C Ptot 250 mW

Junction temperature T j 150 °C

Ambient temperature TA -65 ... 150Storage temperature Tstg -65 ... 150

Thermal ResistanceParameter Symbol Value UnitJunction - soldering point2) RthJS ≤ 280 K/W

1TS is measured on the collector lead at the soldering point to the pcb2For calculation of RthJA please refer to Application Note Thermal Resistance

BFP540F

Jan-28-20042

Electrical Characteristics at TA = 25°C, unless otherwise specifiedParameter Symbol Values Unit

min. typ. max.DC CharacteristicsCollector-emitter breakdown voltage IC = 1 mA, IB = 0

V(BR)CEO 4.5 5 - V

Collector-emitter cutoff current VCE = 14 V, VBE = 0

ICES - - 10 µA

Collector-base cutoff current VCB = 5 V, IE = 0

ICBO - - 100 nA

Emitter-base cutoff current VEB = 0.5 V, IC = 0

IEBO - - 10 µA

DC current gain IC = 20 mA, VCE = 3.5 V

hFE 50 110 200 -

BFP540F

Jan-28-20043

Electrical Characteristics at TA = 25°C, unless otherwise specifiedParameter Symbol Values Unit

min. typ. max.AC Characteristics (verified by random sampling)Transition frequency IC = 50 mA, VCE = 4 V, f = 1 GHz

fT 21 30 - GHz

Collector-base capacitance VCB = 2 V, f = 1 MHz

Ccb - 0.14 0.24 pF

Collector emitter capacitance VCE = 2 V, f = 1 MHz

Cce - 0.3 -

Emitter-base capacitance VEB = 0.5 V, f = 1 MHz

Ceb - 0.6 -

Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt

F --

0.91.3

1.4-

dB

Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz

Gma - -

20

14.5

- -

Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 3 GHz

|S21e|2

15.5 -

18

13

- -

dB

Third order intercept point at output2) VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω

IP3 - 24.5 - dBm

1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz

P-1dB - 11 -

1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|2IP3 value depends on termination of all intermodulation frequency components.Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

BFP540F

Jan-28-20044

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):

Transitor Chip Data:IS = 82.84 aAVAF = 28.383 VNE = 3.19 -VAR = 19.705 VNC = 1.172 -RBM = 1.3 ΩCJE = 1.8063 fFTF = 6.76 psITF = 1 mAVJC = 0.81969 VTR = 2.324 nsMJS = 0 -XTI = 3 -

NF = 1 -ISE = 11.15 fANR = 1 -ISC = 19.237 aAIRB = 0.72983 mARC = 4 ΩMJE = 0.46576 -VTF = 0.23794 VCJC = 234 fFXCJC = 0.3 -VJS = 0.75 VEG = 1.11 eVTNOM 300 K

BF = 107.5 -IKF = 0.48731 ABR = 5.5 -IKR = 0.02 ARB = 5.4 ΩRE = 0.31111 -VJE = 0.8051 VXTF = 0.4219 -PTF = 0 degMJC = 0.30232 -CJS = 0 fFXTB = 0 -FC = 0.73234

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit:

LBI = 0.42 nHLBO = 0.22 nHLEI = 0.26 nHLEO = 0.28 nHLCI = 0.35 pHLCO = 0.22 nHCBE = 34 fFCBC = 2 fFCCE = 33 fFKBO-EO = 0.1 -KBO-CO = 0.01 -KEO-CO = 0.11 -KCI-EI = -0.05 -KBI-CI = -0.08 -KEI-CI = 0.2 -RLBI = 0.15 ΩRLEI = 0.11 ΩRLCI = 0.13 Ω

The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both lead are combined in on electrical connection. RLxI are series resistors for the inductance LxI and Kxa-yb are the coupling coefficients between the inductance Lxa and Lyb. The referencepins forthe couple ports are B, E, C, B´, E`, C´. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes

Valid up to 6GHz

BFP540F

Jan-28-20045

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

50

100

150

200

mW

300

P TO

T

Permissible Pulse Load RthJS = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s

tp

1 10

2 10

3 10

K/W

Rth

JS

0.50.20.10.050.020.010.005D = 0

Permissible Pulse LoadPtotmax/PtotDC = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s

tp

0 10

1 10

P tot

max

/ Pto

tDC

D = 00.0050.010.020.050.10.20.5

Collector-base capacitance Ccb= ƒ(VCB)f = 1MHz

0 2 4 6 8 10 V 14

VCB

0

0.05

0.1

0.15

0.2

pF

0.3

CC

B

BFP540F

Jan-28-20046

Transition frequency fT= ƒ(IC)f = 1GHzVCE = Parameter in V

0 10 20 30 40 50 60 70 80 mA 100

IC

0

2

4

6

8

10

12

14

16

18

20

22

24

GHz30

f T

3V to 4V

2V

1V

0.5V

Power gain Gma, Gms = ƒ(IC)VCE = 2Vf = Parameter in GHz

0 10 20 30 40 50 60 70 80 mA 100

IC

2

4

6

8

10

12

14

16

18

20

22

24

26

dB30

G

0.9GHz

1.8GHz

2.4GHz

3GHz

4GHz

5GHz

6GHz

Power Gain Gma, Gms = ƒ(f),|S21|² = f (f)VCE = 2V, IC = 20mA

0 1 2 3 4 GHz 6

f

0

5

10

15

20

25

30

35

40

45

dB

55

G

Gms

GmaS|21e|²

Power gain Gma, Gms = ƒ (VCE)IC = 20mAf = Parameter in GHz

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

VCE

2

4

6

8

10

12

14

16

18

20

22

24

26

dB30

G

0.9GHz

1.8GHz

2.4GHz

3GHz

4GHz

5GHz6GHz

Package TSFP-4

0.1 M 4x

AM0.1

+0.1-0.050.2

1.4 ±0.05

0.5 0.5

34

21±0.050.15

0.55

±0.0

50.

8

1.2

+0.1

A

10˚M

AX.

+0.1-0.050.2

-0.0

5

±0.04

0.1

MIN

.

0.45

0.9

0.350.

50.

5

Manufacturer

Type code BFP420F

Example

Pin 1

4 0.2

1.55 0.7

1.4

8

Pin 1

Package Out l ine

Foot Pr int

Marking Layout

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/ReelCode E6433: Reel ø330 mm = 10.000 Pieces/Reel

Impressum

Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties ofnon-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.