FQP2N60C / FQPF2N60C - FarnellFQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω...

December 2013

Thermal Characteristics

FQP2N60C / FQPF2N60CN-Channel QFET® MOSFET600 V, 2 A, 4.7 Ω

Description

©2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1

www.fairchildsemi.com1

FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features• 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,

ID = 1 A

• Low Gate Charge (Typ. 8.5 nC)

• Low Crss (Typ. 4.3 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQP2N60C FQPF2N60C UnitRθJC Thermal Resistance, Junction-to-Case, Max. 2.32 5.5 °C/WRθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W

TO-220GDS TO-220F

GDS

G

S

D

Symbol Parameter FQP2N60C FQPF2N60C UnitVDSS Drain-Source Voltage 600 VID Drain Current - Continuous (TC = 25°C) 2.0 2.0 * A

- Continuous (TC = 100°C) 1.35 1.35 * AIDM Drain Current - Pulsed (Note 1) 8 8 * AVGSS Gate-Source Voltage ± 30 VEAS Single Pulsed Avalanche Energy (Note 2) 120 mJIAR Avalanche Current (Note 1) 2.0 AEAR Repetitive Avalanche Energy (Note 1) 5.4 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 54 23 W

- Derate above 25°C 0.43 0.18 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds

300 °C

* Drain current limited by maximum junction temperature.

Package Marking and Ordering Information



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

Electrical Characteristics TC = 25°C unless otherwise noted.

Part Number Top Mark Package Reel Size Tape Width QuantityFQP2N60CFQP2N60C TO-220 N/A N/A 50 units

Packing MethodTube

TO-220F Tube N/A N/A 50 unitsFQPF2N60CFQPF2N60C

Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 2 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V∆BVDSS / ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 600 V, VGS = 0 V -- -- 1 µAVDS = 480 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 VrDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 1 A -- 3.6 4.7 Ω

gFS Forward Transconductance VDS = 40 V, ID = 1 A -- 5.0 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 180 235 pFCoss Output Capacitance -- 20 25 pFCrss Reverse Transfer Capacitance -- 4.3 5.6 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 2 A,

RG = 25 Ω

(Note 4)

-- 9 28 nstr Turn-On Rise Time -- 25 60 nstd(off) Turn-Off Delay Time -- 24 58 nstf Turn-Off Fall Time -- 28 66 nsQg Total Gate Charge VDS = 480 V, ID = 2 A,

VGS = 10 V (Note 4)

-- 8.5 12 nCQgs Gate-Source Charge -- 1.3 -- nCQgd Gate-Drain Charge -- 4.1 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 2 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, IS = 2 A,

dIF / dt = 100 A/µs -- 230 -- ns

Qrr Reverse Recovery Charge -- 1.0 -- µC



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

!

10-1 0 10110-2

10-1

100

VGS

Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V

Bottom : 4.5 V

Notes :1. 250us Pulse Test2. TC = 25oC

I D, D

rain

Cur

rent

[A]

10

VDS, Drain-Source Voltage [V]42 8 10

10-1

100

101

150oC

25oC

-55oC

Notes : 1. VDS = 40V2. 250us Pulse Test

I D, D

rain

Cur

rent

[A]

6

VGS, Gate-Source Voltage [V]

10-1 0 1010

50

100

150

200

250

300

350

400

450

500C

iss = C

gs + C

gd (C

ds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Note ;1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nces

[pF]

10

VDS, Drain-Source Voltage [V]20 4 6 8 10

0

2

4

6

8

10

12

VDS = 300V

VDS = 120V

VDS = 480V

Note : ID = 2A

VG

S, G

ate-

Sou

rce

Vol

tage

[V]

QG, Total Gate Charge [nC]

0 10 3 4 50

2

4

6

8

10

12

VGS = 20V

VGS = 10V

Note : TJ = 25oC

r DS(

ON

) [O

hm],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

150oC

Notes :1. VGS = 0V2. 250us Pulse Test

25oCI DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

2



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

Typical Characteristics (Continued)

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes : 1. VGS = 0 V 2. ID = 250 uA

BV

DS

S, (

Nor

mal

ized

)D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage

TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

? Notes :1. VGS = 10 V2. ID = 1 A

r DS

(ON

), (N

orm

aliz

ed)

Dra

in-S

ourc

e O

n-R

esis

tanc

e

TJ, Junction Temperature [oC]

100 101 102 10310-2

10-1

100

101

100 msDC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

Notes :1. TC = 25 oC

2. TJ = 150 oC3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]100 101 102 103

10-2

10-1

100

101

100 msDC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

Notes : 1. TC = 25 oC

2. TJ = 150 oC3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 1500.0

0.4

0.8

1.2

1.6

2.0

2.4

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [oC]

Figure 9-1. Maximum Safe Operating Areafor FQP2N60C

Figure 10. Maximum Drain Currentvs Case Temperature

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

Figure 9-2. Maximum Safe Operating Areafor FQPF2N60C



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

Typical Characteristics (Continued)

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]Z

JC(t)

, The

rmal

Res

pons

e [o C

/W]

1 0 -5 1 0 -4 1 0 0 1 0 11 0 -2

1 0 -1

1 0 0 N o te s : 1 . Z

θ J C ( t ) = 5 .5 o C /W M a x . 2 . D u ty F a c to r , D = t1 / t 2

3 . T J M - T C = P D M * Zθ J C ( t )

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

1 0 -3 1 0 -2 1 0 -1

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP2N60C

Figure 11-2. Transient Thermal Response Curve for FQPF2N60C

1 0 -5 1 0 -4 1 0 0 1 0 11 0 -2

1 0 -1

1 0 0

oN te s : 1 . Z

θ J C ( t ) = 2 .3 2 o C /W M a x . 2 . D u ty F a c to r , D = t1 / t 2

3 . T J M - T C = M P D * Zθ J C ( t )

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

1 0 -3 1 0 -2 1 0 -1

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

t1

PDM

t2

t1

PDM

t2

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET


FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

Mechanical Dimensions


Figure 16. TO-220, Molded, 3-Lead, Jedec Variation ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003



FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003



TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FQP2N

60C / FQ

PF2N60C

— N

-Channel Q

FET® M

OSFET

FQP2N60C / FQPF2N60C - FarnellFQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω...

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