Effects of Nano-Structure and Refractive Index on Light ...
Transcript of Effects of Nano-Structure and Refractive Index on Light ...
Effects of Nano-Structure and Refractive Index on Light Extraction in OLEDs
Franky So
Department of Materials Science and Engineering
North Carolina State University
• Corrugated substrate works as diffraction grating• kG = 2π/Ʌ
• Reduce kx of trapped modes with corrugated structure• k’ = k - kG
Light Extraction in Corrugated OLEDs
Simulated Mode Distribution
kx (μm-1)
Air cone
kG
Metal
Organic
ITO
SPP
WG
Air Mode
Glass
3
Efficiency at 1000 cd/m2
• Planar : 50.8 cd/A, 30.3 lm/W
• Buckling : 79.2 cd/A, 56.7 lm/W
56% enhancement in cd/A and
87% enhancement in lm/W
Corrugated OLEDs
Adv. Opt. Mater. 1, 404 (2013)4
10 100 1000 100000
20
40
60
80
100
Pow
er
effic
iency (
lm/W
)
Curr
ent effic
iency (
cd/A
)
Luminance (cd/m2)
0
20
40
60
80
100
15 nm Al
100 nm ITO
LiF & Al cathode
50 nm TAPC
70 nm Bphen
15 nm CBP:Irppy3
15 nm TCTA:Irppy3
0 1 2 3 4 5 6 7 81E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10 Buckling
Reference
Lu
min
ance
(cd
/m2)
Cu
rre
nt d
en
sity (
mA
/cm
2)
Voltage (V)
10-1
100
101
102
103
104
105
Substrate
Effect of ETL refractive index
6
π phase shift upon reflectionMetal
𝑘𝑖𝑛_𝑆𝑃𝑃 =2π
𝜆(𝜀𝑐𝑎𝑡ℎ𝑜𝑑𝑒 . 𝜀𝐸𝑇𝐿𝜀𝑐𝑎𝑡ℎ𝑜𝑑𝑒 + 𝜀𝐸𝑇𝐿
)12
Effect of refractive index of ETLs
Emitter Hole-transport material Host
Cul-iBuPyrPHOS PLEXCORE UT-314 PYD2
Electron-transport material
T2T NBphen 3TPYMB
Emitter Hole-transport material Host
Cul-iBuPyrPHOS PLEXCORE UT-314 PYD2
Electron-transport material
T2T NBphen 3TPYMB
3TPYMB
T2T
NBPhen
Em
itter H
ole-tra
nsp
ort m
ateria
l H
ost
Cul-iB
uP
yrP
HO
S
PL
EX
CO
RE
UT
-314
PY
D2
E
lectron
-tran
sport m
ateria
l
T2T
N
Bphen
3T
PY
MB
OLED using T2T/NBPhen as ETL
• Maximum EQE of 12% achieved. Close to the 14% expected EQE based on 70% PLQY and 20% light outcoupling.
11
1 10 100 10000
5
10
15
20
25
30
Exte
rna
l Q
ua
ntu
m E
ffic
ien
cy (
%)
Luminance (cd m-2)
Em
itter
Hole-tran
sport m
aterial
Host
Cul-iB
uPyrPHO
S
PLEX
CO
RE U
T-314
PYD
2
Electron-tran
sport m
aterial
T2T
NB
phen
3TPY
MB
Device using 3TPYMB
• A maximum EQE of 21% was achieved using 3TPYMB. Nearly 75% higher than the T2T/NBPhen device.
12
1 10 100 10000
5
10
15
20
25
30
Exte
rnal Q
uan
tum
Effic
ien
cy (
%)
Luminance (cd m-2)
Comparing two devices
13
0 1 2 3 4 5 610
-5
10-4
10-3
10-2
10-1
100
101
Voltage (V)
Curr
en
t D
en
sity (
mA
cm
-2)
100
101
102
103
104
105
106
T2T/NBPhen
3TPYMB
Lu
min
ance
(cd m
-2)
1 10 100 10000
5
10
15
20
25
30
T2T/NBPhen
3TPYMB
Exte
rnal Q
uan
tum
Effic
ien
cy (
%)
Luminance (cd m-2)
Index Effect on Optical Mode Profile
15
T2T/NBPhen 3TPYMB
Wav
egu
ide
~ 5
%
A. Salehi, Adv Opt Mater 5, 1700197 (2017)
Emitter Hole-transport material Host
Cul-iBuPyrPHOS PLEXCORE UT-314 PYD2
Electron-transport material
T2T NBphen 3TPYMB
Index Manipulation by Oblique Angle Deposition
Barranco, Angel, et al. Progress in Materials Science (2016)
Plawsky et al. Materials Today (2009)
Lowering the index by OAD
OLED devices using the OAD Alq3 ETL
*The last 50 nm of Alq3 was doped with Cs2CO3
1 10 100 1000 100000
5
10
15
20
25
30
35
40 OAD
Control
EQ
E
luminance (cd m-2)
0 1 2 3 4 5 6 7 810
-5
10-4
10-3
10-2
10-1
100
101
102
OAD
Control
Voltage (v)
Cu
rre
nt
De
nsity (
mA
/cm
2)
100
101
102
103
104
105
106
107
Lu
min
an
ce
(cd
/m2)
Control OAD
A. Salehi, ACS Appl Mater Interfaces 10, 9595 (2018)