DFN-2x3-6L Plastic-Encapsulate MOSFETS · 2019. 7. 19. · 3 Feb,2018 V1.0 TYPICAL ELECTRICAL AND...
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www.sztuofeng.com Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 V(BR)DSS RDS(on)MAX I D 20V 0.018 Ω @ 4.5V 7.5 . A 0.026 Ω @ 2.5V MARKING Equivalent Circuit DFN-2x3-6L Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package Dual N-Channel MOSFET APPLICATION Battery Protection Load Switch Power Management DFN-2x3-6L ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 Gate-Source Voltage V GS ±12 V Continuous Drain Current I D A Pulsed Drain Current (note 1) I DM 25 A Thermal Resistance from Junction to Ambient (note 2) R θJA 90 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V 7.5 Max Y :year code W :week code 8205A TFXYWC S1 S1 G1 S2 S2 G2 D1/D2 8205A 8205A
Transcript of DFN-2x3-6L Plastic-Encapsulate MOSFETS · 2019. 7. 19. · 3 Feb,2018 V1.0 TYPICAL ELECTRICAL AND...
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
1
V(BR)DSS RDS(on)MAX ID
20V0.018Ω @ 4.5V
7.5. A0.026Ω @ 2.5V
MARKING
Equivalent Circuit
DFN-2x3-6L Plastic-Encapsulate MOSFETS
FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package
Dual N-Channel MOSFET
APPLICATION Battery Protection Load Switch Power Management
DFN-2x3-6L
ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 25 A
Thermal Resistance from Junction to Ambient (note 2) RθJA 90 /W Junction Temperature TJ 150
Storage Temperature TSTG -55~+150
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260
V
7.5
Max
Y :year code W :week code
8205A
TFXYWC
S1
S1
G1
S2
S2
G2
D1/D2
8205A
8205A
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MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 unless otherwise specifiedParameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V
Zero gate voltage drain current IDSS VDS =19V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 V
Drain-source on-resistance (note 3) RDS(on)
VGS =4.5V, ID =5.0A mΩ
VGS =3.8V, ID =4.0A 21 mΩ
Forward tranconductance (note 3) gFS VDS =5V, ID =4A 10 S
Diode forward voltage (note 3) VSD IS=1.50A, VGS = 0V 1.0 V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss
VDS =10V,VGS =0V,f =1MHz
800 pF
Output Capacitance Coss 150 pF
Reverse Transfer Capacitance Crss 125 pF
SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time td(on) 18 ns
Turn-on rise time tr 4.8 ns
Turn-off delay time td(off) 43.5 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg
VDS =10V,VGS =4.5V,ID=5A 11 nC
Gate-Source Charge Qgs 2.2 nC
Gate-Drain Charge Qgd 2.5 nC
Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
1.0
18
16 18
VGS=4.5V, VDS=10V, RGEN=3Ω
100 nA
12
15
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
DFN-2x3-6L Plastic-Encapsulate MOSFETS
0.7
VGS =2.5V, ID =4.0A 26 mΩ 2218
ID=3A
8205A
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0 1 2 3 4 5
VDS(Volts)Figure 1: On-Regions Characteristics
I D(A
)
VGS =1.5V
VGS =2V
3V
4V
10V
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
VGS(Volts)Figure 2: Transfer Characteristics
I D(A
)
25°C
125°C
VGS=5V
0
10
20
30
40
50
0 5 10 15 20
ID(A)Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R DS(
ON
)(mΩ
)
VGS =4.5V
VGS =2.5V
0.8
1.0
1.2
1.4
1.6
0 50 100 150
Temperature (°C)Figure 4: On-Resistance vs. Junction
Temperature
Nor
mal
ize
ON
-Res
ista
nce
VGS=4.5V
VGS=2.5VID=5AID=4A
10
20
30
40
50
60
70
80
0 2 4 6 8 1
VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage
R DS(
ON
)(mΩ
)
0
25°C
125°C
ID=5A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
VSD(Volts)Figure 6: Body-Diode Characteristics
I S(A
)
25°C
125°C
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DFN-2x3-6L Plastic-Encapsulate MOSFETS 8205A
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 2 4 6 8 10
Qg (nC)Figure 7: Gate-Charge Characteristics
V GS(
Volts
)
VDS=4.5VID =5A
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
VDS(Volts)Figure 8: Capacitance Characteristics
Cap
acita
nce
(pF) Ciss
CrssCoss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
Pow
er (W
)
TJ(Max)=150°CTA=25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance
Z θJA
Nor
mal
ized
Tra
nsie
nt
Ther
mal
Res
ista
nce
TonT
PD
D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1
10
100
0.1 1 10 100VDS (Volts)
I D (A
mps
)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
10µs
100µs
10ms
1ms
DCRDS(ON)
limited
TJ(Max)=150°C, TA=25°C
100m
1s10s
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
DFN-2x3-6L Plastic-Encapsulate MOSFETS 8205A
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
DFN-2x3-6L Plastic-Encapsulate MOSFETS
Min. Max. Min. Max.A 0.700 0.800 0.028 0.031A1 0.000 0.050 0.000 0.002A3D 1.950 2.050 0.077 0.081E 2.950 3.050 0.116 0.120D1 1.450 1.550 0.057 0.061E1 1.650 1.750 0.065 0.069kb 0.200 0.300 0.008 0.012eL 0.300 0.400 0.012 0.016
0.500TYP. 0.020TYP.
Symbol Dimensions In Millimeters Dimensions In Inches
0.200MIN. 0.008MIN.
0.203REF. 0.008REF.
0.300
1.550
1.60
0
2.25
0
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8205A
