1A, 1.2 MHz PWM Boost Converter in Thin SOT23 and DFN 2020. 2. 28.آ 1A, 1.2 MHz PWM Boost...
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Transcript of 1A, 1.2 MHz PWM Boost Converter in Thin SOT23 and DFN 2020. 2. 28.آ 1A, 1.2 MHz PWM Boost...
2018-2020 Microchip Technology Inc. DS20006034C-page 1
MIC2288 Features • 2.5V to 10V Input Voltage Range • Output Voltage Adjustable to 34V • Over 1A Switch Current • 1.2 MHz PWM Operation • Stable with Ceramic Capacitors •
MIC2288
DS20006034C-page 2 2018-2020 Microchip Technology Inc.
Typical Application Circuit
Functional Block Diagram
2
L1 10 μH
R2
R1 3
1
4
5
MIC2288YD5
VIN
1-Cell Li Ion
VOUT 15V
EN
SW
FB
GND
VIN
C1 2.2 μF
C2 10 μF
GND
CA
PWM Generator
Ramp Generator
1.2 MHz Oscillator
SW
ENFB OVP*VIN
1.24V
*OVP available on DFN package option only.
gm
OVP*
Σ
VREF
2018-2020 Microchip Technology Inc. DS20006034C-page 3
MIC2288 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Supply Voltage (VIN) .................................................................................................................................................+12V Switch Voltage (VSW) .................................................................................................................................. -0.3V to +34V Enable Pin Voltage (VEN)............................................................................................................................... -0.3V to VIN FB Voltage (VFB) ......................................................................................................................................................+6.0V Switch Current (ISW) .....................................................................................................................................................2A ESD Rating (Note 1) ................................................................................................................................................+2 kV
Operating Ratings†† Supply Voltage (VIN) .................................................................................................................................. +2.5V to +10V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
†† Notice: The device is not ensured to function outside its operating ratings. Note 1: Devices are ESD-sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
MIC2288
DS20006034C-page 4 2018-2020 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS Electrical Characteristics: TA = +25°C, VIN = VEN = 3.6V, VOUT = 10V, IOUT = 20 mA, unless otherwise noted. Bold values indicate -40°C ≤ TJ ≤ ±125°C.(1)
Parameter Sym. Min. Typ. Max. Units Conditions
Supply Voltage Range VIN 2.5 — 10 V Undervoltage Lockout VUVLO 1.8 2.1 2.4 V Quiescent Current IVIN — 2.8 5 mA VFB = 2V, not switching Shutdown Current ISD — 0.1 1 µA VEN = 0V (Note 2) Feedback Voltage VFB 1.227 1.24 1.252 V ±1%
1.215 — 1.265 ±2%, overtemperature Feedback Input Current IFB — –450 — nA VFB = 1.24V Line Regulation — — 0.1 1 % 3V ≤ VIN ≤ 5V Load Regulation — — 0.2 — % 5 mA ≤ IOUT ≤ 40 mA Maximum Duty Cycle DMAX 85 90 — % Switch Current Limit ISW — 1.2 — A Switch Saturation Voltage VSW — 550 — mV ISW = 1A Switch Leakage Current ISW — 0.01 5 µA VEN = 0V, VSW = 10V Enable Threshold VEN 1.5 — — V Turn on
— — 0.4 Turn off Enable Pin Current IEN — 20 40 µA VEN = 10V Oscillator Frequency fSW 1.05 1.2 1.35 MHz Output Overvoltage Protection
VOVP 30 32 34 V DFN package option only
Overtemperature Threshold Shutdown
TJ — 150 — °C — 10 — Hysteresis
Note 1: Specification for packaged product only. 2: ISD = IVIN.
2018-2020 Microchip Technology Inc. DS20006034C-page 5
MIC2288
TEMPERATURE SPECIFICATIONS(1)
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges Junction Operating Temperature TJ –40 — +125 °C Storage Temperature Range TS –65 — +150 °C Package Thermal Resistances Thermal Resistance, 2x2 8-Lead DFN JA — 93 — °C/W Thermal Resistance, 5-Lead TSOT23 JA — 256 — °C/W Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the th1l resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
MIC2288
DS20006034C-page 6 2018-2020 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
FIGURE 2-1: Efficiency at VOUT = 12V.
FIGURE 2-2: Load Regulation.
FIGURE 2-3: Feedback Voltage vs. Temperature.
FIGURE 2-4: Current Limit vs. Supply Voltage.
FIGURE 2-5: Current Limit vs. Temperature.
FIGURE 2-6: Switch Saturation vs. Supply Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
75
77
79
81
83
85
87
89
91
0 25 50 75 100 125 150
EF FI
C IE
N C
Y (%
)
OUTPUT CURRENT (mA)
V IN = 4.2V
V IN = 3.6V
V IN = 3.3V
11.8
11.85
11.9
11.95
12
12.05
12.1
12.15
12.2
0 25 50 75 100 125 150
O U
TP U
T VO
LT A
G E
(V )
LOAD (mA)
V IN
= 3.6V
1.10
1.12
1.14
1.16
1.18
1.20
1.22
1.24
1.26
1.28
1.30
-40 -20 0 20 40 60 80 100 120
FE ED
BA C
K VO
LT A
G E
(V )
TEMPERATURE (°C)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2.5 4 5.5 7 8.5 10
C U
RR EN
T LI
M IT
(A )
SUPPLY VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-40 -20 0 20 40 60 80 100 120
C U
RR EN
T LI
M IT
(A )
TEMPERATURE (°C)
0
50
100
150
200
250
300
2.5 4 5.5 7 8.5 10SW IT
C H
S A
TU RA
TI O
N V
O LT
A G
E (m
V)
SUPPLY VOLTAGE (V)
IS W = 500mA
2018-2020 Microchip Technology Inc. DS20006034C-page 7
MIC2288
FIGURE 2-7: Switch Saturation vs. Switch Current.
FIGURE 2-8: Switch Saturation vs. Temperature.
FIGURE 2-9: Frequency vs. Temperature.
.
FIGURE 2-10: Maximum Duty Cycle vs. Supply Voltage.
FIGURE 2-11: Maximum Duty Cycle vs. Temperature.
FIGURE 2-12: FB Pin Current vs. Temperature.
0
100
200
300
400
500
600
700
0 200 400 600 800 1000
SW IT
C H
S A
TU RA
TI O
N V
O LT
A G
E (m
V)
SWITCH CURRENT (mA)
V IN = 3.6V
0
100
200
300
400
500
600
700
-40 -20 0 20 40 60 80 100 120
SW IT
C H
S A
TU RA
TI O
N V
O LT
A G
E (m
V)
TEMPERATURE (°C)
V IN = 3.6V I S W
= 500mA
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-40 -20 0 20 40 60 80 100 120
FR EQ
U EN
C Y
(M H
z)
TEMPERATURE (°C)
80
82
84
86
88
90
92
94
96
98
100
2.5 4 5.5 7 8.5 10
M A
XI M
U M
D U
TY C
YC LE
(% )
SUPPLY VOLTAGE (V)
85
87
89
91
93
95
97
99
-40 -20 0 20 40 60 80 100 120
M A
XI M
U M
D U
TY C
YC LE
(% )
TEMPERATURE (°C)
V IN = 3.6V
0
100
200
300
400
500
600
700
-40 -20 0 20 40 60 80 100 120
FE ED
BA C
K C
U RR
EN T
(n A
)
TEMPERATURE (°C)
MIC2288
DS20006034C-page 8 2018-2020 Microchip Technology Inc.
FIGURE 2-13: Enable Characteristics.
FIGURE 2-14: Line Transient Response.
FIGURE 2-15: Load Transient Response.
FIGURE
