1Subject to change without noticewwwcreecomrf

CGHV1J070D70 W 180 GHz GaN HEMT Die

Creersquos CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) on a silicon carbide substrate using a 025 μm gate length

fabrication process This GaN-on-SiC product offers superior high frequency

high efficiency features It is ideal for a variety of applications operating from

10 MHz to 18 GHz at 40 V with a high breakdown voltage

FEATURES

bull 17 dB Typ Small Signal Gain at 10 GHz

bull 60 Typ PAE at 10 GHz

bull 70 W Typical Psat

bull 40 V Operation

bull Up to 18GHz Operation

APPLICATIONS

bull Satellite Communications

bull PTP Communications Links

bull Marine Radar

bull Pleasure Craft Radar

bull Port Vessel Traffic Services

bull Broadband Amplifiers

bull High Efficiency Amplifiers

Packaging Information

bull Bare die are shipped in Gel-Pakreg containers or on tape

bull Non-adhesive tacky membrane immobilizes die during shipment

Rev

10

ndash M

ay 2

017

PN CGHV1J070D

2 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Absolute Maximum Ratings (not simultaneous)

Parameter Symbol Rating Units Conditions

Drain-source Voltage VDSS 100 Volts 25˚C

Gate-source Voltage VGS -10 +2 Volts 25˚C

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 144 mA 25˚C

Maximum Drain Current1 IDMAX 60 A 25˚C

Thermal Resistance Junction to Case (packaged)2 RθJC 18 ˚CW 85˚C

Thermal Resistance Junction to Case (die only)2 RθJC 11 ˚CW 85˚C

Mounting Temperature TS 320 ˚C 30 seconds

Note1 Current limit for long term reliable operationNote2 Eutectic die attach using 8020 AuSn mounted to a 60 mil thick CMC carrier

Electrical Characteristics (Frequency = 10 GHz unless otherwise stated TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics

Gate Threshold Voltage V(GS)TH -38 -30 ndash23 V VDS = 10 V ID = 144 mA

Gate Quiescent Voltage V(GS)Q ndash -27 ndash VDC VDD = 40 V IDQ = 720 mA

Saturated Drain Current1 ISAT 115 130 ndash A VDS = 60 V VGS = 20 V

Drain-Source Breakdown Voltage VBD 100 ndash ndash V VGS = -8 V ID = 144 mA

On Resistance RON ndash 02 ndash Ω VDS = 01 V VGS = 0 V

Gate Forward Voltage VG-ON ndash 185 ndash V IGS = 144 mA

RF Characteristics

Small Signal Gain GSS ndash 17 ndash dB VDD = 40 V IDQ = 720 mA

Saturated Power Output1 PSAT ndash 70 ndash W VDD = 40 V IDQ = 720 mA

Drain Efficiency2 η ndash 60 ndash VDD = 40 V IDQ = 720 mA

Intermodulation Distortion IM3 ndash -30 ndash dBc VDD = 40 V IDQ = 720 mA POUT = 70 W PEP

Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 40 V IDQ = 720 mA POUT = 70 W CW

Dynamic Characteristics

Input Capacitance CGS ndash 240 ndash pF VDS = 40 V Vgs = -8 V f = 1 MHz

Output Capacitance CDS ndash 42 ndash pF VDS = 40 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 06 ndash pF VDS = 40 V Vgs = -8 V f = 1 MHz

Notes1 Scaled from PCM unit cell1 PSAT is defined as IG = 144 mA2 Drain Efficiency = POUT PDC

3 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Die Dimensions (units in microns)

Overall die size 800 x 4800 (+0-50) microns die thickness 100 (+-10) micronsAll Gate and Drain pads must be wire bonded for electrical connection

Pad Size (microns)

Drain 200 x 100

Gate 200 x 100

Interconnect 80 x 80

Assembly Notes

bull Recommended solder is AuSn (8020) solder Refer to Creersquos website for the Eutectic Die Bond Procedure application note at

httpwwwcreecomRFDocument-Library

bull Vacuum collet is the preferred method of pick-up

bull The backside of the die is the Source (ground) contact

bull Die back side gold plating is 5 microns thick minimum

bull Thermosonic ball or wedge bonding are the preferred connection methods

bull Gold wire must be used for connections

bull Use the die label (XX-YY) for correct orientation

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

2 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Absolute Maximum Ratings (not simultaneous)

Parameter Symbol Rating Units Conditions

Drain-source Voltage VDSS 100 Volts 25˚C

Gate-source Voltage VGS -10 +2 Volts 25˚C

Storage Temperature TSTG -65 +150 ˚C

Operating Junction Temperature TJ 225 ˚C

Maximum Forward Gate Current IGMAX 144 mA 25˚C

Maximum Drain Current1 IDMAX 60 A 25˚C

Thermal Resistance Junction to Case (packaged)2 RθJC 18 ˚CW 85˚C

Thermal Resistance Junction to Case (die only)2 RθJC 11 ˚CW 85˚C

Mounting Temperature TS 320 ˚C 30 seconds

Note1 Current limit for long term reliable operationNote2 Eutectic die attach using 8020 AuSn mounted to a 60 mil thick CMC carrier

Electrical Characteristics (Frequency = 10 GHz unless otherwise stated TC = 25˚C)

Characteristics Symbol Min Typ Max Units Conditions

DC Characteristics

Gate Threshold Voltage V(GS)TH -38 -30 ndash23 V VDS = 10 V ID = 144 mA

Gate Quiescent Voltage V(GS)Q ndash -27 ndash VDC VDD = 40 V IDQ = 720 mA

Saturated Drain Current1 ISAT 115 130 ndash A VDS = 60 V VGS = 20 V

Drain-Source Breakdown Voltage VBD 100 ndash ndash V VGS = -8 V ID = 144 mA

On Resistance RON ndash 02 ndash Ω VDS = 01 V VGS = 0 V

Gate Forward Voltage VG-ON ndash 185 ndash V IGS = 144 mA

RF Characteristics

Small Signal Gain GSS ndash 17 ndash dB VDD = 40 V IDQ = 720 mA

Saturated Power Output1 PSAT ndash 70 ndash W VDD = 40 V IDQ = 720 mA

Drain Efficiency2 η ndash 60 ndash VDD = 40 V IDQ = 720 mA

Intermodulation Distortion IM3 ndash -30 ndash dBc VDD = 40 V IDQ = 720 mA POUT = 70 W PEP

Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 40 V IDQ = 720 mA POUT = 70 W CW

Dynamic Characteristics

Input Capacitance CGS ndash 240 ndash pF VDS = 40 V Vgs = -8 V f = 1 MHz

Output Capacitance CDS ndash 42 ndash pF VDS = 40 V Vgs = -8 V f = 1 MHz

Feedback Capacitance CGD ndash 06 ndash pF VDS = 40 V Vgs = -8 V f = 1 MHz

Notes1 Scaled from PCM unit cell1 PSAT is defined as IG = 144 mA2 Drain Efficiency = POUT PDC

3 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Die Dimensions (units in microns)

Overall die size 800 x 4800 (+0-50) microns die thickness 100 (+-10) micronsAll Gate and Drain pads must be wire bonded for electrical connection

Pad Size (microns)

Drain 200 x 100

Gate 200 x 100

Interconnect 80 x 80

Assembly Notes

bull Recommended solder is AuSn (8020) solder Refer to Creersquos website for the Eutectic Die Bond Procedure application note at

httpwwwcreecomRFDocument-Library

bull Vacuum collet is the preferred method of pick-up

bull The backside of the die is the Source (ground) contact

bull Die back side gold plating is 5 microns thick minimum

bull Thermosonic ball or wedge bonding are the preferred connection methods

bull Gold wire must be used for connections

bull Use the die label (XX-YY) for correct orientation

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

3 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Die Dimensions (units in microns)

Overall die size 800 x 4800 (+0-50) microns die thickness 100 (+-10) micronsAll Gate and Drain pads must be wire bonded for electrical connection

Pad Size (microns)

Drain 200 x 100

Gate 200 x 100

Interconnect 80 x 80

Assembly Notes

bull Recommended solder is AuSn (8020) solder Refer to Creersquos website for the Eutectic Die Bond Procedure application note at

httpwwwcreecomRFDocument-Library

bull Vacuum collet is the preferred method of pick-up

bull The backside of the die is the Source (ground) contact

bull Die back side gold plating is 5 microns thick minimum

bull Thermosonic ball or wedge bonding are the preferred connection methods

bull Gold wire must be used for connections

bull Use the die label (XX-YY) for correct orientation

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

4 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Gmax and K Factor

Figure 1 CGHV1J070D - Stability with Gmax and K FactorVDD = 40 V IDS = 360 mA

Figure 2 CGHV1J070D - Stability with Gmax and K FactorVDD = 40 V IDS = 720 mA

G M

ax (d

B)K Factor

G M

ax (d

B)K Factor

CGHV1J070D G40V4 144 mm dieCGHV1J070D G40V4 144 mm die VddVdd=40 volts=40 volts IdqIdq=360=360 mAmA

CGHV1J070D G40V4CGHV1J070D G40V4 144 mm die144 mm die VddVdd=40 volts=40 volts IdqIdq=720=720 mAmA

5 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Source and Load Impedances

Frequency (GHz)

Source Impedance (ohms) Load Impedance (ohms) Series Gate Stability Resistor (ohms)

10 277 + j3567 11 + j857 240

20 133 + j178 583 + j815 115

30 076 + j111 306 + j697 065

40 0627 + j0778 206 + j582 045

50 055 + j057 148 + j488 0325

60 0458 + j041 107 + j416 0250

70 0465 + j0296 0896 + j35 0180

80 0453 + j019 0785 + j32 0125

90 0399 + j0096 071 + j286 0090

100 0328 + j001 0643 + j256 0060

110 0245 ndash j0018 061 +j232 0035

120 0173 ndash j003 052 + j206 0013

130 0247 ndash j0085 0474 + j1917 0

140 0149 ndash j019 0417 + j173 0

150 0143 ndash j0268 0377 + j157 0

160 0144 ndash j034 034 + j143 0

170 0142 ndash j041 031 + j129 0

180 0158 ndash j0478 0279 + j118 0

Table 1Note VDD = 40 V IDQ = 535 mA

Figure 3 CGHV1J070D - Power Gain Output Power and Drain Efficiency using Source and Load Pull Impedances (Series gate stability resistor values chosen to make Kgt1)

40

50

60

70

80

Pow

erG

ain

(dB

)O

utpu

tPow

er(W

)D

rain

Effic

ienc

y(

)

Power Gain dB

0

10

20

30

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Pow

erG

ain

(dB

)O

utpu

tPow

er(W

)D

rain

Effic

ienc

y(

)

Frequency (GHz)

Output Power Watts

Drain Efficiency

6 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Typical S-Parameters for CGHV1J070D(Small Signal VDS = 40 V IDQ = 360 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0944 -16560 1249 8769 0011 -178 0603 -16723

100 GHz 0947 -17219 608 7558 0010 -1331 0637 -16640

150 GHz 0952 -17426 386 6638 0010 -2195 0680 -16485

200 GHz 0957 -17528 272 5856 0009 -2921 0725 -16411

250 GHz 0962 -17592 203 5182 0009 -3539 0766 -16410

300 GHz 0967 -17639 157 4599 0008 -4066 0802 -16456

350 GHz 0971 -17678 125 4095 0007 -4514 0832 -16526

400 GHz 0974 -17711 102 3656 0007 -4897 0857 -16606

450 GHz 0977 -17740 084 3273 0006 -5224 0877 -16688

500 GHz 0980 -17767 070 2935 0006 -5505 0894 -16769

550 GHz 0982 -17791 060 2636 0005 -5747 0908 -16845

600 GHz 0983 -17812 052 2369 0005 -5958 0919 -16916

650 GHz 0985 -17832 045 2129 0005 -6141 0928 -16982

700 GHz 0986 -17851 039 1911 0004 -6302 0936 -17042

750 GHz 0987 -17868 035 1712 0004 -6443 0943 -17098

800 GHz 0988 -17884 031 1529 0004 -6568 0949 -17149

850 GHz 0989 -17899 028 1361 0004 -6679 0953 -17196

900 GHz 0989 -17913 025 1204 0003 -6777 0958 -17240

950 GHz 0990 -17927 022 1058 0003 -6865 0961 -17280

1000 GHz 0990 -17940 020 921 0003 -6942 0964 -17318

1050 GHz 0991 -17952 019 792 0003 -7012 0967 -17352

1100 GHz 0991 -17963 017 670 0003 -7074 0970 -17385

1150 GHz 0991 -17975 016 555 0003 -7129 0972 -17415

1200 GHz 0992 -17985 015 445 0003 -7177 0974 -17443

1250 GHz 0992 -17996 014 340 0002 -7220 0975 -17470

1300 GHz 0992 17994 013 239 0002 -7258 0977 -17495

1350 GHz 0992 17984 012 143 0002 -7291 0978 -17519

1400 GHz 0992 17975 011 050 0002 -7320 0979 -17541

1450 GHz 0993 17965 010 -039 0002 -7343 0980 -17562

1500 GHz 0993 17956 010 -126 0002 -7363 0981 -17582

1525 GHz 0993 17952 009 -168 0002 -7371 0982 -17592

1550 GHz 0993 17947 009 -209 0002 -7379 0982 -17601

1575 GHz 0993 17943 009 -250 0002 -7385 0983 -17611

1600 GHz 0993 17939 009 -290 0002 -7390 0983 -17620

1625 GHz 0993 17934 008 -330 0002 -7395 0983 -17628

1650 GHz 0993 17930 008 -369 0002 -7398 0984 -17637

1675 GHz 0993 17926 008 -407 0002 -7400 0984 -17645

1700 GHz 0993 17921 008 -445 0002 -7402 0985 -17654

1725 GHz 0993 17917 007 -482 0002 -7402 0985 -17662

1750 GHz 0993 17913 007 -519 0001 -7401 0985 -17670

1775 GHz 0993 17909 007 -556 0001 -7399 0985 -17677

1800 GHz 0993 17905 007 -592 0001 -7397 0986 -17685

To download the s-parameters in s2p format go to the CGHV1J070D Product Page and click on the documentation tab

5 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Source and Load Impedances

Frequency (GHz)

Source Impedance (ohms) Load Impedance (ohms) Series Gate Stability Resistor (ohms)

10 277 + j3567 11 + j857 240

20 133 + j178 583 + j815 115

30 076 + j111 306 + j697 065

40 0627 + j0778 206 + j582 045

50 055 + j057 148 + j488 0325

60 0458 + j041 107 + j416 0250

70 0465 + j0296 0896 + j35 0180

80 0453 + j019 0785 + j32 0125

90 0399 + j0096 071 + j286 0090

100 0328 + j001 0643 + j256 0060

110 0245 ndash j0018 061 +j232 0035

120 0173 ndash j003 052 + j206 0013

130 0247 ndash j0085 0474 + j1917 0

140 0149 ndash j019 0417 + j173 0

150 0143 ndash j0268 0377 + j157 0

160 0144 ndash j034 034 + j143 0

170 0142 ndash j041 031 + j129 0

180 0158 ndash j0478 0279 + j118 0

Table 1Note VDD = 40 V IDQ = 535 mA

Figure 3 CGHV1J070D - Power Gain Output Power and Drain Efficiency using Source and Load Pull Impedances (Series gate stability resistor values chosen to make Kgt1)

40

50

60

70

80

Pow

erG

ain

(dB

)O

utpu

tPow

er(W

)D

rain

Effic

ienc

y(

)

Power Gain dB

0

10

20

30

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Pow

erG

ain

(dB

)O

utpu

tPow

er(W

)D

rain

Effic

ienc

y(

)

Frequency (GHz)

Output Power Watts

Drain Efficiency

6 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Typical S-Parameters for CGHV1J070D(Small Signal VDS = 40 V IDQ = 360 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0944 -16560 1249 8769 0011 -178 0603 -16723

100 GHz 0947 -17219 608 7558 0010 -1331 0637 -16640

150 GHz 0952 -17426 386 6638 0010 -2195 0680 -16485

200 GHz 0957 -17528 272 5856 0009 -2921 0725 -16411

250 GHz 0962 -17592 203 5182 0009 -3539 0766 -16410

300 GHz 0967 -17639 157 4599 0008 -4066 0802 -16456

350 GHz 0971 -17678 125 4095 0007 -4514 0832 -16526

400 GHz 0974 -17711 102 3656 0007 -4897 0857 -16606

450 GHz 0977 -17740 084 3273 0006 -5224 0877 -16688

500 GHz 0980 -17767 070 2935 0006 -5505 0894 -16769

550 GHz 0982 -17791 060 2636 0005 -5747 0908 -16845

600 GHz 0983 -17812 052 2369 0005 -5958 0919 -16916

650 GHz 0985 -17832 045 2129 0005 -6141 0928 -16982

700 GHz 0986 -17851 039 1911 0004 -6302 0936 -17042

750 GHz 0987 -17868 035 1712 0004 -6443 0943 -17098

800 GHz 0988 -17884 031 1529 0004 -6568 0949 -17149

850 GHz 0989 -17899 028 1361 0004 -6679 0953 -17196

900 GHz 0989 -17913 025 1204 0003 -6777 0958 -17240

950 GHz 0990 -17927 022 1058 0003 -6865 0961 -17280

1000 GHz 0990 -17940 020 921 0003 -6942 0964 -17318

1050 GHz 0991 -17952 019 792 0003 -7012 0967 -17352

1100 GHz 0991 -17963 017 670 0003 -7074 0970 -17385

1150 GHz 0991 -17975 016 555 0003 -7129 0972 -17415

1200 GHz 0992 -17985 015 445 0003 -7177 0974 -17443

1250 GHz 0992 -17996 014 340 0002 -7220 0975 -17470

1300 GHz 0992 17994 013 239 0002 -7258 0977 -17495

1350 GHz 0992 17984 012 143 0002 -7291 0978 -17519

1400 GHz 0992 17975 011 050 0002 -7320 0979 -17541

1450 GHz 0993 17965 010 -039 0002 -7343 0980 -17562

1500 GHz 0993 17956 010 -126 0002 -7363 0981 -17582

1525 GHz 0993 17952 009 -168 0002 -7371 0982 -17592

1550 GHz 0993 17947 009 -209 0002 -7379 0982 -17601

1575 GHz 0993 17943 009 -250 0002 -7385 0983 -17611

1600 GHz 0993 17939 009 -290 0002 -7390 0983 -17620

1625 GHz 0993 17934 008 -330 0002 -7395 0983 -17628

1650 GHz 0993 17930 008 -369 0002 -7398 0984 -17637

1675 GHz 0993 17926 008 -407 0002 -7400 0984 -17645

1700 GHz 0993 17921 008 -445 0002 -7402 0985 -17654

1725 GHz 0993 17917 007 -482 0002 -7402 0985 -17662

1750 GHz 0993 17913 007 -519 0001 -7401 0985 -17670

1775 GHz 0993 17909 007 -556 0001 -7399 0985 -17677

1800 GHz 0993 17905 007 -592 0001 -7397 0986 -17685

To download the s-parameters in s2p format go to the CGHV1J070D Product Page and click on the documentation tab

6 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Typical S-Parameters for CGHV1J070D(Small Signal VDS = 40 V IDQ = 360 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0944 -16560 1249 8769 0011 -178 0603 -16723

100 GHz 0947 -17219 608 7558 0010 -1331 0637 -16640

150 GHz 0952 -17426 386 6638 0010 -2195 0680 -16485

200 GHz 0957 -17528 272 5856 0009 -2921 0725 -16411

250 GHz 0962 -17592 203 5182 0009 -3539 0766 -16410

300 GHz 0967 -17639 157 4599 0008 -4066 0802 -16456

350 GHz 0971 -17678 125 4095 0007 -4514 0832 -16526

400 GHz 0974 -17711 102 3656 0007 -4897 0857 -16606

450 GHz 0977 -17740 084 3273 0006 -5224 0877 -16688

500 GHz 0980 -17767 070 2935 0006 -5505 0894 -16769

550 GHz 0982 -17791 060 2636 0005 -5747 0908 -16845

600 GHz 0983 -17812 052 2369 0005 -5958 0919 -16916

650 GHz 0985 -17832 045 2129 0005 -6141 0928 -16982

700 GHz 0986 -17851 039 1911 0004 -6302 0936 -17042

750 GHz 0987 -17868 035 1712 0004 -6443 0943 -17098

800 GHz 0988 -17884 031 1529 0004 -6568 0949 -17149

850 GHz 0989 -17899 028 1361 0004 -6679 0953 -17196

900 GHz 0989 -17913 025 1204 0003 -6777 0958 -17240

950 GHz 0990 -17927 022 1058 0003 -6865 0961 -17280

1000 GHz 0990 -17940 020 921 0003 -6942 0964 -17318

1050 GHz 0991 -17952 019 792 0003 -7012 0967 -17352

1100 GHz 0991 -17963 017 670 0003 -7074 0970 -17385

1150 GHz 0991 -17975 016 555 0003 -7129 0972 -17415

1200 GHz 0992 -17985 015 445 0003 -7177 0974 -17443

1250 GHz 0992 -17996 014 340 0002 -7220 0975 -17470

1300 GHz 0992 17994 013 239 0002 -7258 0977 -17495

1350 GHz 0992 17984 012 143 0002 -7291 0978 -17519

1400 GHz 0992 17975 011 050 0002 -7320 0979 -17541

1450 GHz 0993 17965 010 -039 0002 -7343 0980 -17562

1500 GHz 0993 17956 010 -126 0002 -7363 0981 -17582

1525 GHz 0993 17952 009 -168 0002 -7371 0982 -17592

1550 GHz 0993 17947 009 -209 0002 -7379 0982 -17601

1575 GHz 0993 17943 009 -250 0002 -7385 0983 -17611

1600 GHz 0993 17939 009 -290 0002 -7390 0983 -17620

1625 GHz 0993 17934 008 -330 0002 -7395 0983 -17628

1650 GHz 0993 17930 008 -369 0002 -7398 0984 -17637

1675 GHz 0993 17926 008 -407 0002 -7400 0984 -17645

1700 GHz 0993 17921 008 -445 0002 -7402 0985 -17654

1725 GHz 0993 17917 007 -482 0002 -7402 0985 -17662

1750 GHz 0993 17913 007 -519 0001 -7401 0985 -17670

1775 GHz 0993 17909 007 -556 0001 -7399 0985 -17677

1800 GHz 0993 17905 007 -592 0001 -7397 0986 -17685

To download the s-parameters in s2p format go to the CGHV1J070D Product Page and click on the documentation tab

7 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Typical S-Parameters for CGHV1J070D(Small Signal VDS = 40 V IDQ = 720 mA angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0956 -16723 1234 8798 0008 -148 0639 -17066

100 GHz 0958 -17322 604 7707 0008 -1178 0664 -16966

150 GHz 0961 -17513 387 6867 0008 -1959 0696 -16800

200 GHz 0964 -17605 276 6138 0007 -2629 0731 -16694

250 GHz 0968 -17662 208 5497 0007 -3211 0766 -16650

300 GHz 0971 -17703 163 4932 0007 -3717 0797 -16652

350 GHz 0974 -17736 131 4434 0006 -4156 0825 -16685

400 GHz 0977 -17764 107 3994 0006 -4536 0848 -16734

450 GHz 0979 -17789 089 3605 0005 -4866 0868 -16791

500 GHz 0981 -17811 075 3260 0005 -5152 0885 -16852

550 GHz 0983 -17831 064 2950 0005 -5401 0899 -16913

600 GHz 0984 -17850 055 2672 0004 -5619 0910 -16972

650 GHz 0986 -17867 048 2421 0004 -5810 0920 -17028

700 GHz 0987 -17883 042 2192 0004 -5977 0929 -17081

750 GHz 0987 -17898 038 1983 0004 -6125 0936 -17130

800 GHz 0988 -17912 034 1791 0003 -6256 0942 -17176

850 GHz 0989 -17926 030 1613 0003 -6371 0948 -17219

900 GHz 0990 -17938 027 1448 0003 -6474 0952 -17260

950 GHz 0990 -17951 025 1293 0003 -6564 0956 -17297

1000 GHz 0990 -17962 022 1149 0003 -6645 0960 -17332

1050 GHz 0991 -17973 020 1013 0003 -6716 0963 -17365

1100 GHz 0991 -17984 019 884 0002 -6779 0965 -17396

1150 GHz 0991 -17994 017 762 0002 -6834 0968 -17425

1200 GHz 0992 17996 016 646 0002 -6882 0970 -17452

1250 GHz 0992 17986 015 536 0002 -6923 0972 -17477

1300 GHz 0992 17977 014 430 0002 -6958 0974 -17502

1350 GHz 0992 17967 013 329 0002 -6988 0975 -17525

1400 GHz 0993 17958 012 232 0002 -7012 0976 -17546

1450 GHz 0993 17950 011 138 0002 -7030 0978 -17567

1500 GHz 0993 17941 011 048 0002 -7044 0979 -17586

1525 GHz 0993 17937 010 003 0002 -7048 0979 -17596

1550 GHz 0993 17932 010 -040 0002 -7052 0980 -17605

1575 GHz 0993 17928 010 -082 0001 -7054 0980 -17614

1600 GHz 0993 17924 009 -124 0001 -7054 0981 -17623

1625 GHz 0993 17920 009 -166 0001 -7053 0981 -17632

1650 GHz 0993 17916 009 -206 0001 -7051 0982 -17640

1675 GHz 0993 17912 009 -246 0001 -7048 0982 -17648

1700 GHz 0993 17908 008 -286 0001 -7043 0983 -17656

1725 GHz 0993 17904 008 -325 0001 -7037 0983 -17664

1750 GHz 0993 17900 008 -363 0001 -7029 0983 -17672

1775 GHz 0993 17896 008 -401 0001 -7020 0984 -17680

1800 GHz 0993 17892 008 -439 0001 -7009 0984 -17687

To download the s-parameters in s2p format go to the CGHV1J070D Product Page and click on the documentation tab

8 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Part Number System

Parameter Value Units

Lower Frequency DC GHz

Upper Frequency1 180 GHz

Power Output 70 W

Package Bare Die -

Table 1Note1 Alpha characters used in frequency code indicate a value greater than 99 GHz See Table 2 for value

Character Code Code Value

A 0

B 1

C 2

D 3

E 4

F 5

G 6

H 7

J 8

K 9

Examples 1A = 100 GHz2H = 270 GHz

Table 2

PackagePower Output (W)Upper Frequency (GHz)Cree GaN High Voltage HEMT Product Line

CGHV1J070D

9 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Product Ordering Information

Order Number Description Unit of Measure

CGHV1J070D GaN HEMT Bare Die Each

10 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate

and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties

which may result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes

no warranty representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the

average values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in

different applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical

experts for each application Cree products are not designed intended or authorized for use as components in applications intended for

surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal

injury or death or in applications for the planning construction maintenance or direct operation of a nuclear facility CREE and the CREE

logo are registered trademarks of Cree Inc

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketingCree RF Components19194075302

Ryan BakerCree Marketing RF Components19194077816

Tom DekkerCree Sales Director RF Components19193135639

9 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (gt 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 lt 500 V) JEDEC JESD22 C101-C

Product Ordering Information

Order Number Description Unit of Measure

CGHV1J070D GaN HEMT Bare Die Each

10 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate

and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties

which may result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes

no warranty representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the

average values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in

different applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical

experts for each application Cree products are not designed intended or authorized for use as components in applications intended for

surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal

injury or death or in applications for the planning construction maintenance or direct operation of a nuclear facility CREE and the CREE

logo are registered trademarks of Cree Inc

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketingCree RF Components19194075302

Ryan BakerCree Marketing RF Components19194077816

Tom DekkerCree Sales Director RF Components19193135639

10 CGHV1J070D Rev 10

Cree Inc4600 Silicon Drive

Durham North Carolina USA 27703USA Tel +19193135300

Fax +19198692733wwwcreecomrf

Copyright copy 2011-2017 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc Other trademarks product and company names are the property of their respective owners and do not imply specific product andor vendor endorsement sponsorship or association

Disclaimer

Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate

and reliable However no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties

which may result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes

no warranty representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the

average values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in

different applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical

experts for each application Cree products are not designed intended or authorized for use as components in applications intended for

surgical implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal

injury or death or in applications for the planning construction maintenance or direct operation of a nuclear facility CREE and the CREE

logo are registered trademarks of Cree Inc

For more information please contact

Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomwireless

Sarah MillerMarketingCree RF Components19194075302

Ryan BakerCree Marketing RF Components19194077816

Tom DekkerCree Sales Director RF Components19193135639