- Epitaxial planar die construction

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Pb free and RoHS compliant

- Case : SOT- 23 small outline plastic package

- Weight : 0.008 grams (approximately) SOT-23

SYMBOL UNIT

PD mW

VEBO V

IC A

TJ , TSTG °C

SYMBOL UNIT

BC856

BC857 IC= -10μA IE= 0

BC858

BC856

BC857 IC= -10mA IB= 0

BC858

Emitter-Base Breakdown Voltage IE= -1μA IC= 0 V(BR)EBO V

BC856 VCB= -70V

BC857 VCB= -45V

BC858 VCB= -25V

Emitter Cut-off Current VEB= -5V IC=0 IEBO μA

DC Current Gain VCE= -5V IC= -2mA hFE

IC= -100mA IB= -5mA VCE(sat) V

Base-Emitter Saturation Voltage IC= -100mA IB= -5mA VBE(sat) V

Transition Frequency VCE= -5V IC= -10mA f= 100MHz fT MHz

-0.65-

-

100

-1.1

-

- -0.1

125

220

420

250

475

800

-

-

-100

-100

-100

nA

V

V

-

-

-

-5 -

Collector-Emitter Saturation Voltage

PARAMETER

BC856

BC857

BC858

BC856

BC857

BC858

Collector Cut-off Current

BC856A, BC857A, BC858A

BC857C, BC858C

V(BR)CEO

IE= 0 ICBO

200mW, PNP Small Signal Transistor

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

PARAMETER

V(BR)CBO

Power Dissipation

-65

-

VCBO

-80

-50

Collector-Emitter Breakdown

Voltage

BC856B, BC857B, BC858B

-45

-30

-

-

-30

Collector-Base Voltage

VCollector-Emitter Voltage

MIN MAX

Version : H1606

Emitter-Base Voltage

Collector Current

Junction and Storage Temperature Range

-0.1

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

FEATURES

- High temperature soldering guaranteed : 260°C/10s

BC856A SERIESTaiwan Semiconductor

V

MECHANICAL DATA

- Terminal : Matte tin plated, lead free, solderable

per MIL-STD-202, method 208 guaranteed

Small Signal Product

VALUE

200

-80

-65

-45

-30

-5

-50

Collector-Base Breakdown

Voltage

-55 to + 150

-30

-

VCEO

1

2

3

4

5

1

Version : H1606

BC856A SERIES

Small Signal Product

Taiwan Semiconductor

RATINGS AND CHARACTERISTIC CURVES

(TA=25°C unless otherwise noted)

0

5

10

15

20

25

30

35

40

45

50

0 2 4 6 8 10 12 14 16 18 20

I C[m

A], C

olle

cto

r C

urr

ent

VCE[V], Collector-Emitter Voltage

Fig. 1 Static Characteristic

IB = -400μA

IB = -350μA

IB = -300μA

IB = -250μA

IB =- 200μA

IB = -150μA

IB = -100μA

IB = -50μA

10

100

1000

-0.1 -1.0 -10.0 -100.0

Fig. 2 DC Current Gain

VCE = - 5V

IC[mA], Collector Current h

FE

, D

C C

urr

ent G

ain

-0.

-1.

-10.

-100.

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

I C[m

A], C

olle

cto

r C

urr

ent

VBE[V], Base-Emitter Voltage

Fig. 4 Base-Emitter On Voltage

VCE = - 5V

1

10

100

-1. -10. -100. -1000.

Cob[p

F],

Capacitance

VCB[V], Collector-Base Voltage

Fig.5 Collector Output Capacitance

f=1MHz IE=0

1

10

100

1000

-0. -1. -10. -100.

f T[M

Hz],

Curr

ent

Gain

-Bandw

idth

Pro

duct

IC[mA], Collector Current

Fig. 6 Current Gain Bandwidth Product

f=1MHz IE=0

0.01

0.1

1

10

0.1 1 10 100

Fig.3 Base-Emitter Saturation Voltage VS.Collector-Emitter Saturation

IC = 10 IB

IC[mA], Collector Current

VB

E(s

at)

, V

CE

(sat)[V

], S

atu

ratio

n V

olta

ge

VBE(sat)

VCE(sat)

1

2

3

4

5

1

Version : H1606

BC856A SERIES

Small Signal Product

Taiwan Semiconductor

RATINGS AND CHARACTERISTIC CURVES

(TA=25°C unless otherwise noted)

0

50

100

150

200

250

300

350

400

450

500

0.01 0.1 1 10 100 1000

hFE

Fig. 7 DC Current Gain as a Function of Collector Current; Typical Values

hFE - IC

BC857A: VCE=5V

-IC(mA)

Ta=150OC

Ta=25OC

Ta=55OC

0

200

400

600

800

1000

1200

0.01 0.1 1 10 100 1000

VBE

Fig. 8 Base-Emitter Voltage as a Function of Collector Current; Typical Values

VBE - IC

BC857A: VCE=-5V

-IC(mA)

Ta=150OC

Ta=25OC

Ta=55OC

BC85xx

(Note 1)RF

Version : H1606

GBC856A

G

BC856A RFG Green compound

Description

Note 1 : "xx" is Device Code from "6A" thru "8C".

*: optional available

RF

Package

SOT-23

Packing code

suffix(*)

Packing

3K / 7 " Reel

Part No.

Packing

code

Packing code

suffix

BC856A SERIESTaiwan Semiconductor

Ordering information

Example

Preferred

Part No.

Small Signal Product

Part No.

Packing

code

Dimensions

Min Max Min Max

A 2.70 3.10 0.106 0.122

B 1.10 1.50 0.043 0.059

C 0.30 0.51 0.012 0.020

D 1.78 2.04 0.070 0.080

E 2.20 2.60 0.087 0.102

F 0.90 1.30 0.035 0.051

G

H

Suggested PAD Layout

A

B

C

D

Part No. Marking

BC856A 3A

BC856B 3B

BC857A 3E

BC857B 3F

BC857C 3G

BC858A 3J

BC858B 3K

BC858C 3L

Unit(inch)

Typ. Typ.

Unit(mm)

Version : H1606

0.8 0.031

2.0 0.079

0.9 0.035

BC856A SERIES

0.004 REF

DIM.

Taiwan Semiconductor

Small Signal Product

Unit(mm) Unit(inch)

Marking

0.1 REF

0.550 REF

0.95 0.037

DIM.

0.022 REF

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied,to

any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or seling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Version : H1606

Notice

BC856A SERIESTaiwan Semiconductor

Small Signal Product