ℏ ω exc.
description
Transcript of ℏ ω exc.
PL
R
S
ℏωexc.
EL
Inte
nsi
ty (
arb
. un
its)
Energy (eV)
Figure S1 – Kroutvar et al
t=12µs
(a)
(b)
exc.
QD
EF
EF
Vread
CB
VB
Write
Readout
t
exc. QDVB
CB
exc. QD
(d) (c)
Agilent 81104ARise time 3nsFrequency: 0.25 – 100kHz
PicoQuant954nm
Jobin Yvon Triax 550
Pulse generator
Laserdiode
Spectrometer<0.2nm
Laser
Voltage
Detector
Time
ON
OFF
ON
OFF
Vread=1.0V
Vstore=-1.2V
t
Repetitionrate
SP
C
Response time 0.2nsSPCM-AQR-16
exc.
QD
p-contact
Figure S2 – Kroutvar et al
1µs
.5µs
.3µs
Figure S3 – Kroutvar et al
1.30 1.35 1.40
T=10K t=12 s
Energy (eV)
EL
Inte
nsi
ty (
arb
. un
its)
Ti:Saexc.(eV)
0 1 2 3 4 5 200 400 600 800 1000
1
Nor
mal
ized
pea
k in
tens
ity
Storage time t (µs)
Figure S4 – Kroutvar et al
store(90K)=(60±5)µs
store(100K)=(30±5)µs
store(10K) »1ms
exc.
+
QD
Bright exciton Jz= -1
or
+
QD
Dark exciton Jz= -2
+
Excitation
tStorage
Readout
QDContact
Bright exciton Jz= -1
QD
CB
VB
Bright exciton Jz= -1
Figure S5 – Kroutvar et al
(a)
(b) (c)