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Experiments

chip size： 300 um× 300um

Sapphire

3μm N-GaN with 1x1019cm-3 doping

MQW： InGaN/GaN with 16nm GaN

barriers

EBL： 20nm P-AlGaN

200nm P-GaN with 6x1017cm-3 doping

N contact

ITO

P contact

Five pairs

Results and Discussion

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Fig. 1.Schematic diagram of band engineering at MQWs with GQWs and conventional QWs.

Sample In%

LED 15%

LED A 30~0%

LED B 18~0%

LED C 13~0%

LED D 0~18%

Fig. 2. Experimental and simulation HR-XRD curves of (a) conventional LED and (b) GQW LED with indium composition grades from 30% to 0%.

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