Experiments
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Experiments chip size ： 300 um× 300um 3 Sapphire 3μm N-GaN with 1x10 19 cm -3 doping MQW ： InGaN/GaN with 16nm GaN barriers EBL ： 20nm P-AlGaN 200nm P-GaN with 6x10 17 cm -3 doping N contact ITO P contact Five pairs
description
Experiments. P contact. ITO. 200nm P- GaN with 6 x10 17 cm -3 doping. EBL ： 20nm P- AlGaN. Five pairs. MQW ： InGaN / GaN with 16nm GaN barriers. N contact. 3 μ m N- GaN with 1 x10 19 cm -3 doping. Sapphire. chip size ： 300 um × 300um. Results and Discussion. - PowerPoint PPT Presentation
Transcript of Experiments
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Experiments
chip size： 300 um× 300um
Sapphire
3μm N-GaN with 1x1019cm-3 doping
MQW： InGaN/GaN with 16nm GaN
barriers
EBL： 20nm P-AlGaN
200nm P-GaN with 6x1017cm-3 doping
N contact
ITO
P contact
Five pairs
Results and Discussion
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Fig. 1.Schematic diagram of band engineering at MQWs with GQWs and conventional QWs.
Sample In%
LED 15%
LED A 30~0%
LED B 18~0%
LED C 13~0%
LED D 0~18%
Fig. 2. Experimental and simulation HR-XRD curves of (a) conventional LED and (b) GQW LED with indium composition grades from 30% to 0%.
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