ZVN2110A N-channel enhancement mode vertical DMOS … · n-channel enhancement mode vertical dmos...
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Transcript of ZVN2110A N-channel enhancement mode vertical DMOS … · n-channel enhancement mode vertical dmos...
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FETISSUE 2 – MARCH 94
FEATURES* 100 Volt VDS* RDS(on)= 4Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuous Drain Current at Tamb=25°C ID 320 mA
Pulsed Drain Current IDM 6 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source BreakdownVoltage
BVDSS 100 V ID=1mA, VGS=0V
Gate-Source ThresholdVoltage
VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage DrainCurrent
IDSS 1100
µAµA
VDS=100V, VGS=0VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 1.5 A VDS=25V, VGS=10V
Static Drain-Source On-StateResistance (1)
RDS(on) 4 Ω VGS=10V,ID=1A
Forward Transconductance(1)(2)
gfs 250 mS VDS=25V,ID=1A
Input Capacitance (2) Ciss 75 pF
Common Source OutputCapacitance (2)
Coss 25 pF VDS=25 V, VGS=0V, f=1MHz
Reverse TransferCapacitance (2)
Crss 8 pF
Turn-On Delay Time (2)(3) td(on) 7 ns
VDD ≈25V, ID=1ARise Time (2)(3) tr 8 ns
Turn-Off Delay Time (2)(3) td(off) 13 ns
Fall Time (2)(3) tf 13 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Ω
E-Line
TO92 Compatible
ZVN2110A
D G S
TYPICAL CHARACTERISTICS
Output Characteristi cs
VDS - Drain Source Voltage (Volts)
Transfer Characte rist ics
2 4 6 8 100 20 40 60 80 100
Saturation Characteristics
VD
S- D
rain
Sou
rce
Vo
ltag
e (V
olt
s)
Volta ge Saturation Char acteri stics
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
0 2 4 6 8 10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
ID(o
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
VDS=10V
0
10
6
2
4
8
0 2 4 6 8 10
ID=
1A
500mA
100mA
ID(o
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
ID(o
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
Normalised R DS(on) and VGS(th) v Temperature
Tj-Junction Temperature (°C)
Nor
mal
ised
RD
S(o
n)an
d V
GS
(th
)
-40 -20 0 20 40 60 80 120100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain
-Sourc
e Resis
tance
RDS(o
n)
Gate Threshold Voltage VGS(TH)
ID=1 AVGS=10V
ID=1mAVGS=VDS
180
0
0.8
0.4
1.2
2.0
1.6 8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
VGS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source vo ltage
VGS-Gate Source Voltage (Volts)
RD
S(o
n)-D
rain
Sou
rce
Res
ista
nce
(Ω)
1 10 100
500mA
ID=1A
100mA
1
10
5
VGS=
10V
3V
10V
VDS=25V
ZVN2110A
3-365
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FETISSUE 2 – MARCH 94
FEATURES* 100 Volt VDS* RDS(on)= 4Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Continuous Drain Current at Tamb=25°C ID 320 mA
Pulsed Drain Current IDM 6 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source BreakdownVoltage
BVDSS 100 V ID=1mA, VGS=0V
Gate-Source ThresholdVoltage
VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage DrainCurrent
IDSS 1100
µAµA
VDS=100V, VGS=0VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 1.5 A VDS=25V, VGS=10V
Static Drain-Source On-StateResistance (1)
RDS(on) 4 Ω VGS=10V,ID=1A
Forward Transconductance(1)(2)
gfs 250 mS VDS=25V,ID=1A
Input Capacitance (2) Ciss 75 pF
Common Source OutputCapacitance (2)
Coss 25 pF VDS=25 V, VGS=0V, f=1MHz
Reverse TransferCapacitance (2)
Crss 8 pF
Turn-On Delay Time (2)(3) td(on) 7 ns
VDD ≈25V, ID=1ARise Time (2)(3) tr 8 ns
Turn-Off Delay Time (2)(3) td(off) 13 ns
Fall Time (2)(3) tf 13 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test.
(3)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVN2110A
3-364
D G S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
Transfer Characteristics
2 4 6 8 100 20 40 60 80 100
Saturation Characteristics
VD
S- D
rain
Sou
rce
Vo
ltag
e (V
olt
s)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
0 2 4 6 8 10
2.8
2.4
1.6
0.4
0
0.8
2.0
1.2
ID(o
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
VDS=10V
0
10
6
2
4
8
0 2 4 6 8 10
ID=
1A
500mA
100mA
ID(o
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
ID(o
n) -O
n-S
tate
Dra
in C
urre
nt (
Am
ps)
Normalised R DS(on) and VGS(th) v Temperature
Tj-Junction Temperature (°C)
Nor
mal
ised
RD
S(o
n)an
d V
GS
(th
)
-40 -20 0 20 40 60 80 120100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain
-Sourc
e Resis
tance
RDS(o
n)
Gate Threshold Voltage VGS(TH)
ID=1 AVGS=10V
ID=1mAVGS=VDS
180
0
0.8
0.4
1.2
2.0
1.6 8V
9V
7V
5V
4V
6V
3V
5V
4V
8V
6V
9V
7V
VGS=
0
0.8
0.4
1.2
2.0
1.6
On-resistance v gate-source voltage
VGS-Gate Source Voltage (Volts)
RD
S(o
n)-D
rain
Sou
rce
Res
ista
nce
(Ω)
1 10 100
500mA
ID=1A
100mA
1
10
5
VGS=
10V
3V
10V
VDS=25V
ZVN2110A
3-365
TYPICAL CHARACTERISTICS
Transconductance v drain current
ID(on)- Drain Current (Amps)
gfs-
Tra
nsco
nduc
tanc
e (m
S)
gfs-
Tra
nsco
nduc
tanc
e (m
S)
Q-Charge (nC)
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)V
GS-G
ate
Sou
rce
Vol
tage
(V
olts
)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
VDS= 20V
ID=1A
50V 80V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0 0.2 0.4 0.6 0.8 1.0
VDS=25V
0
100
200
400
300
500
0 2 4 6 8 10
VDS=25V
0
300
200
100
400
500
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-C
apac
itanc
e (p
F)
Coss
Ciss
Crss
0 10 20 30 40 50
60
40
20
80
100
ZVN2110A
3-366
