TS5A2066 Dual-Channel 10-ΩSPST Analog Switch · scds184e –january 2005–revised june 2017 ......
Transcript of TS5A2066 Dual-Channel 10-ΩSPST Analog Switch · scds184e –january 2005–revised june 2017 ......
SPST
IN1
NO1 COM1
SPST
IN2
NO2 COM2
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A2066SCDS184E –JANUARY 2005–REVISED JUNE 2017
TS5A2066 Dual-Channel 10-Ω SPST Analog Switch
1
1 Features1• Low ON-State Resistance (10 Ω)• Control Inputs Are 5-V Tolerant• Low Charge Injection• Excellent ON-State Resistance Matching• Low Total Harmonic Distortion (THD)• 1.65-V to 5.5-V Single-Supply Operation• Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
2 Applications• Sample-and-Hold Circuits• Battery-Powered Equipment• Audio and Video Signal Routing• Communication Circuits• Cell Phones• Low-Voltage Data-Acquisition Systems• PDAs
3 DescriptionThe TS5A2066 device is a dual single-pole single-throw (SPST) analog switch that is designed tooperate from 1.65 V to 5.5 V. This device can handleboth digital and analog signals, and signals up to VCCcan be transmitted in either direction.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TS5A2066SSOP (DCT) 2.95 mm x 2.80 mmVSSOP (DCU) 2.30 mm x 2.00 mmDSBGA (YZP) 1.25 mm x 2.25 mm
(1) For all available packages, see the orderable addendum atthe end of the data sheet.
SPACER
SPACER
Functional Block Diagram
2
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Table of Contents1 Features .................................................................. 12 Applications ........................................................... 13 Description ............................................................. 14 Revision History..................................................... 25 Pin Configuration and Functions ......................... 36 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 46.2 ESD Ratings ............................................................ 46.3 Recommended Operating Conditions....................... 46.4 Thermal Information .................................................. 46.5 Electrical Characteristics For 5-V Supply ................ 56.6 Electrical Characteristics For 3.3-V Supply ............. 76.7 Electrical Characteristics For 2.5-V Supply ............. 96.8 Electrical Characteristics For 1.8-V Supply............. 116.9 Typical Performance ............................................... 13
7 Parameter Measurement Information ................ 168 Detailed Description ............................................ 21
8.1 Overview ................................................................. 21
8.2 Functional Block Diagram ....................................... 218.3 Feature Description................................................. 218.4 Device Functional Modes........................................ 21
9 Application and Implementation ........................ 229.1 Application Information............................................ 229.2 Typical Application ................................................. 22
10 Power Supply Recommendations ..................... 2311 Layout................................................................... 24
11.1 Layout Guidelines ................................................. 2411.2 Layout Example .................................................... 24
12 Device and Documentation Support ................. 2512.1 Receiving Notification of Documentation Updates 2512.2 Community Resources.......................................... 2512.3 Trademarks ........................................................... 2512.4 Electrostatic Discharge Caution............................ 2512.5 Glossary ................................................................ 25
13 Mechanical, Packaging, and OrderableInformation ........................................................... 25
4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (April 2010) to Revision E Page
• Added Device Information table, Pin Configuration and Functions section, ESD Ratings table, RecommendedOperating Conditions table, Thermal Information table, Feature Description section, Device Functional Modes,Application and Implementation section, Power Supply Recommendations section, Layout section, Device andDocumentation Support section, and Mechanical, Packaging, and Orderable Information section....................................... 1
• Deleted the Summary of Characteristics table ....................................................................................................................... 3• Changed pin 8 From: V+ To: VCC in the pinout images .......................................................................................................... 3• Deleted the ON-state resistance Min values of 10 Ω and 12 Ω in the Electrical Characteristics For 3.3-V Suppy table ...... 7• Deleted the ON-state resistance Min values of 20 Ω in the Electrical Characteristics For 2.5-V Supply table...................... 9• Changed Test Conditions for Charge injection From: See Figure 23 To; See Figure 24 in the Electrical
Characteristics For 2.5-V Supply table ................................................................................................................................. 10• Deleted the ON-state resistance Min values of 80 Ω and 90 Ω in the Electrical Characteristics For 1.8-V Supply table.... 11• Changed V+ to VCC in the Typical Performance graphs ...................................................................................................... 13• Changed V+ to VCC in the Parameter Measurement Information images ............................................................................ 16
GND
IN2
COM1
NO1
IN1
COM2
NO2
VCC
4
3
2
1 8
6
7
5 D2D1
C2C1
B2B1
A2A1
1
2
3
4
8
7
6
5
NO1
COM1
IN2
GND
COM2
IN1
NO2
VCC
3
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5 Pin Configuration and Functions
DCT or DCU Package8 Pin (SSOP or VSSOP)
Top View
YZP Package8 Pin (DSBGA)
Top View
Pin FunctionsNO. NAME DESCRIPTION
1 NO1 Normally open2 COM1 Common3 IN2 Digital control to connect COM to NO4 GND Digital ground5 NO2 Normally open6 COM2 Common7 IN1 Digital control to connect COM to NO8 VCC Power supply
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(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operatingconditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.(3) All voltages are with respect to ground, unless otherwise specified.(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(5) This value is limited to 5.5 V maximum.
6 Specifications
6.1 Absolute Maximum Ratings (1) (2)
over operating free-air temperature range (unless otherwise noted)MIN MAX UNIT
VCC Supply voltage range (3) –0.5 6.5 VVNOVCOM
Analog voltage range (3) (4) (5) –0.5 VCC + 0.5 V
IK Analog port diode current VNO, VCOM < 0 or VNO, VCOM > VCC –50 50 mAINOICOM
On-state switch current VNO, VCOM = 0 to VCC –50 50 mA
VIN Digital input voltage range (3) (4) –0.5 6.5 VIIK Digital input clamp current VIN < 0 –50 mAICC Continuous current through VCC 100 mAIGND Continuous current through GND –100 100 mATstg Storage temperature range –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. .
6.2 ESD RatingsVALUE UNIT
V(ESD) Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000
VCharged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
6.3 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)
MIN MAX UNITVCC Supply voltage range 1.65 5.5 VVNO VCOM Analog voltage range 0 VCC VVIN Digital input voltage range 0 5.5 V
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport.
6.4 Thermal Information
THERMAL METRIC (1)TS5A2066
UNITDCT (SSOP) DCU (VSSOP) YZP (DSBGA)8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 214.1 212.8 99.8 °C/WRθJC(top) Junction-to-case (top) thermal resistance 106.8 93.6 1.0 °C/WRθJB Junction-to-board thermal resistance 127.8 133.6 29.6 °C/WψJT Junction-to-top characterization parameter 30.2 30.4 0.5 °C/WψJB Junction-to-board characterization parameter 125.5 133.1 29.8 °C/W
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(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
6.5 Electrical Characteristics For 5-V Supply (1)
VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNIT
Analog SwitchAnalog signalrange VCOM, VNO 0 VCC V
ON-stateresistance ron
0 ≤ VNO ≤ VCC,ICOM = –32 mA,
Switch ON,See Figure 16
25°C4.5 V
7.5 10Ω
Full 15ON-stateresistancematchbetweenchannels
ΔronVNO = 3.15 V,ICOM = –32 mA,
Switch ON,SeeFigure 16
25°C
4.5 V
0.4 1
ΩFull 3
ON-stateresistanceflatness
ron(flat)0 ≤ VNO ≤ VCC,ICOM = –32 mA,
Switch ON,See Figure 16
25°C4.5 V
3.5 5Ω
Full 8
NOOFF leakagecurrent
INO(OFF)
VNO = 1 V,VCOM = 4.5 V,orVNO = 4.5 V,VCOM = 1 V,
Switch OFF,See Figure 17
25°C
5.5 V
–30 –10 30
nAFull –40 40
COMOFF leakagecurrent
ICOM(OFF)
VCOM = 1 V,VNO = 4.5 V,orVCOM = 4.5 V,VNO = 1 V,
Switch OFF,See Figure 17
25°C
5.5 V
–50 –8 50
nAFull –50 50
NOON leakagecurrent
INO(ON)
VNO = 1 V,VCOM = Open,orVNO = 4.5 V,VCOM = Open
Switch ON,See Figure 18
25°C
5.5 V
–40 –12 40
nAFull –4 40
COMON leakagecurrent
ICOM(ON)
VCOM = 1 V,VNO = Open,orVCOM = 4.5 V,VNO = Open,
Switch ON,See Figure 18
25°C
5.5 V
–70 –30 70
nAFull –70 70
Digital Control Input (IN)Input logic high VIH Full VCC × 0.7 5.5 VInput logic low VIL Full 0 VCC × 0.3 V
Input leakagecurrent IIH, IIL VIN = 5.5 V or 0
25°C5.5 V
–0.1 0.05 0.1µA
Full –1 1
6
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Electrical Characteristics For 5-V Supply(1) (continued)VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNITDynamic
Turn-on time tONVCOM = 3 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 5 V 4.4 5.2 5.8
nsFull
4.5 Vto
5.5 V3.4 6.1
Turn-off time tOFFVCOM = 3 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 5 V 1.7 2.6 3.6
nsFull
4.5 Vto
5.5 V1.3 4.2
Charge injection QCVGEN = 0,RGEN = 0,
CL = 0.1 nF,See Figure 24 25°C 5 V 1 pC
NOOFFcapacitance
CNO(OFF) VNO = VCC or GND, Switch OFF,See Figure 19 25°C 5 V 5.5 pF
COMOFFcapacitance
CCOM(OFF)VCOM = VCC orGND,
Switch OFF,See Figure 19 25°C 5 V 5.5 pF
NOON capacitance CNO(ON) VNO = VCC or GND, Switch ON,
See Figure 19 25°C 5 V 13.5 pF
COMON capacitance CCOM(ON)
VCOM = VCC orGND,
Switch ON,See Figure 19 25°C 5 V 13.5 pF
Digital inputcapacitance CIN VIN = VCC or GND, See Figure 19 25°C 5 V 2.5 pF
Bandwidth BW RL = 50 Ω, Switch ON,See Figure 21 25°C 5 V 300 MHz
OFF isolation OISORL = 50 Ω,f = 10 MHz,
Switch OFF,See Figure 22 25°C 5 V –68 dB
Crosstalk XTALKRL = 50 Ω,f = 10 MHz,
Switch ON,See Figure 23 25°C 5 V –66 dB
Total harmonicdistortion THD RL = 600 Ω,
CL = 50 pF,f = 20 Hz to 20 kHz,See Figure 25 25°C 5 V 0.01%
Supply
Positive supplycurrent ICC VIN = VCC or GND, Switch ON or OFF
25°C5.5 V
0.1 1µA
Full 5
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(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
6.6 Electrical Characteristics For 3.3-V Supply (1)
VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNIT
Analog SwitchAnalog signalrange VCOM, VNO 0 VCC V
ON-stateresistance ron
0 ≤ VNO ≤ VCC,ICOM = –24 mA,
Switch ON,See Figure 16
25°C3 V
12 15Ω
Full 20ON-stateresistancematchbetweenchannels
ΔronVNO = 2.1 V,ICOM = –24 mA,
Switch ON,See Figure 16
25°C
3 V
0.5 1.5
ΩFull 3.5
ON-stateresistanceflatness
ron(flat)0 ≤ VNO ≤ VCC,ICOM = –24 mA,
Switch ON,See Figure 16
25°C3 V
7 8Ω
Full 12
NOOFF leakagecurrent
INO(OFF)
VNO = 1 V,VCOM = 3 V,orVNO = 3 V,VCOM = 1 V,
Switch OFF,See Figure 17
25°C
3.6 V
–30 –6 30
nAFull –40 40
COMOFF leakagecurrent
ICOM(OFF)
VCOM = 1 V,VNO = 3 V,orVCOM = 3 V,VNO = 1 V,
Switch OFF,See Figure 17
25°C
3.6 V
–50 –7 50
nAFull –50 50
NOON leakagecurrent
INO(ON)
VNO = 1 V,VCOM = Open,orVNO = 3 V,VCOM = Open,
Switch ON,See Figure 18
25°C
3.6 V
–40 –7 40
nAFull –40 40
COMON leakagecurrent
ICOM(ON)
VCOM = 1 V,VNO = Open,orVCOM = 3 V,VNO = Open,
Switch ON,See Figure 18
25°C
3.6 V
–70 –20 70
nAFull –70 70
Digital Control Input (IN)Input logic high VIH Full VCC × 0.7 5.5 VInput logic low VIL Full 0 VCC × 0.3 V
Input leakagecurrent IIH, IIL VIN = 5.5 V or 0
25°C3.6 V
–0.1 0.05 0.1µA
Full –1 1
8
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Electrical Characteristics For 3.3-V Supply(1) (continued)VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNITDynamic
Turn-on time tONVCOM = 2 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 3.3 V 4.9 5.6 6.4ns
Full 3 V to3.6 V 4.3 7.1
Turn-off time tOFFVCOM = 2 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 3.3 V 2 2.7 3.7ns
Full 3 V to3.6 V 1.3 4.7
Charge injection QCVGEN = 0,RGEN = 0,
CL = 0.1 nF,See Figure 24 25°C 3.3 V 0.5 pC
NOOFFcapacitance
CNO(OFF)VNO = VCC orGND,
Switch OFF,See Figure 19 25°C 3.3 V 5.5 pF
COMOFFcapacitance
CCOM(OFF)VCOM = VCC orGND,
Switch OFF,See Figure 19 25°C 3.3 V 6 pF
NOON capacitance CNO(ON)
VNO = VCC orGND,
Switch ON,See Figure 19 25°C 3.3 V 14 pF
COMON capacitance CCOM(ON)
VCOM = VCC orGND,
Switch ON,See Figure 19 25°C 3.3 V 14 pF
Digital inputcapacitance CI VIN = VCC or GND, See Figure 19 25°C 3.3 V 3 pF
Bandwidth BW RL = 50 Ω, Switch ON,See Figure 21 25°C 3.3 V 300 MHz
OFF isolation OISORL = 50 Ω,f = 10 MHz,
Switch OFF,See Figure 22 25°C 3.3 V –68 dB
Crosstalk XTALKRL = 50 Ω,f = 10 MHz,
Switch ON,See Figure 23 25°C 3.3 V –66 dB
Total harmonicdistortion THD RL = 600 Ω,
CL = 50 pF,f = 20 Hz to 20 kHz,See Figure 25 25°C 3.3 V 0.065%
Supply
Positive supplycurrent ICC VIN = VCC or GND, Switch ON or OFF
25°C3.6 V
0.1 1µA
Full 5
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(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
6.7 Electrical Characteristics For 2.5-V Supply (1)
VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNIT
Analog SwitchAnalog signalrange VCOM, VNO 0 VCC V
ON-stateresistance ron
0 ≤ VNO ≤ VCC,ICOM = –8 mA,
Switch ON,See Figure 16
25°C2.3 V
22Ω
Full 30ON-stateresistancematchbetweenchannels
ΔronVNO = 1.6 V,ICOM = –8 mA,
Switch ON,SeeFigure 16
25°C
2.3 V
0.5 1.5
ΩFull 5
ON-stateresistanceflatness
ron(flat)0 ≤ VNO ≤ VCC,ICOM = –8 mA,
Switch ON,See Figure 16
25°C2.3 V
16 18Ω
Full 25
NOOFF leakagecurrent
INO(OFF)
VNO = 0.5 V,VCOM = 2.2 V,orVNO = 2.2 V,VCOM = 0.5 V,
Switch OFF,See Figure 17
25°C
2.7 V
–30 –5.5 30
nAFull –40 40
COMOFF leakagecurrent
ICOM(OFF)
VCOM = 0.5 V,VNO = 2.2 V,orVCOM = 2.2 V,VNO = 0.5 V,
Switch OFF,See Figure 17
25°C
2.7 V
–50 –7.5 50
nAFull –50 50
NOON leakagecurrent
INO(ON)
VNO = 0.5 V,VCOM = Open,orVNO = 2.2 V,VCOM = Open,
Switch ON,See Figure 18
25°C
2.7 V
–40 –5 40
nAFull –40 40
COMON leakagecurrent
ICOM(ON)
VCOM = 0.5 V,VNO = Open,orVCOM = 2.2 V,VNO = Open,
Switch ON,See Figure 18
25°C
2.7 V
–70 –12 70
nAFull –70 70
Digital Control Input (IN)
Input logic high VIH Full VCC ×0.7
5.5 V
Input logic low VIL Full 0 VCC × 0.3 V
Input leakagecurrent IIH, IIL VIN = 5.5 V or 0
25°C2.7 V
–0.1 0.05 0.1µA
Full –1 1
10
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Electrical Characteristics For 2.5-V Supply(1) (continued)VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNITDynamic
Turn-on time tONVCOM = 1.5 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 2.5 V 5.7 6.4 8.1ns
Full 2.3 V to2.7 V 4.4 8.5
Turn-off time tOFFVCOM = 1.5 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 2.5 V 2.1 3.1 4.3ns
Full 2.3 V to2.7 V 1.8 4.8
Charge injection QCVGEN = 0,RGEN = 0,
CL = 0.1 nF,See Figure 24 25°C 2.5 V 0.5 pC
NOOFFcapacitance
CNO(OFF)VNO = VCC orGND,
Switch OFF,See Figure 19 25°C 2.5 V 6 pF
COMOFFcapacitance
CCOM(OFF)VCOM = VCC orGND,
Switch OFF,See Figure 19 25°C 2.5 V 6 pF
NOON capacitance CNO(ON)
VNO = VCC orGND,
Switch ON,See Figure 19 25°C 2.5 V 14 pF
COMON capacitance CCOM(ON)
VCOM = VCC orGND,
Switch ON,See Figure 19 25°C 2.5 V 14 pF
Digital inputcapacitance CIN VIN = VCC or GND, See Figure 19 25°C 2.5 V 3 pF
Bandwidth BW RL = 50 Ω, Switch ON,See Figure 21 25°C 2.5 V 300 MHz
OFF isolation OISORL = 50 Ω,f = 10 MHz,
Switch OFF,See Figure 22 25°C 2.5 V –68 dB
Crosstalk XTALKRL = 50 Ω,f = 10 MHz,
Switch ON,See Figure 23 25°C 2.5 V –66 dB
Total harmonicdistortion THD RL = 600 Ω,
CL = 50 pF,f = 20 Hz to 20 kHz,See Figure 25 25°C 2.5 V 0.35%
Supply
Positive supplycurrent ICC VIN = VCC or GND, Switch ON or OFF
25°C2.7 V
0.1 1µA
Full 5
11
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(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
6.8 Electrical Characteristics For 1.8-V Supply (1)
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNIT
Analog SwitchAnalog signalrange VCOM, VNO 0 VCC V
ON-stateresistance ron
0 ≤ VNO ≤ VCC,ICOM = –4 mA,
Switch ON,See Figure 16
25°C1.65 V
85Ω
Full 120ON-stateresistancematchbetweenchannels
ΔronVNO = 1.15 V,ICOM = –4 mA,
Switch ON,See Figure 16
25°C
1.65 V
0.9 2
ΩFull 6
ON-stateresistanceflatness
ron(flat)0 ≤ VNO ≤ VCC,ICOM = –4 mA,
Switch ON,See Figure 16
25°C1.65 V
75 85Ω
Full 100
NOOFF leakagecurrent
INO(OFF)
VNO = 0.3 V,VCOM = 1.65 V,orVNO = 1.65 V,VCOM = 0.3 V,
Switch OFF,See Figure 17
25°C
1.95 V
–30 –6 30
nAFull –40 40
COMOFF leakagecurrent
ICOM(OFF)
VCOM = 0.3 V,VNO = 1.65 V,orVCOM = 1.65 V,VNO = 0.3 V,
Switch OFF,See Figure 17
25°C
1.95 V
–50 –7 50
nAFull –50 50
NOON leakagecurrent
INO(ON)
VNO = 0.3 V,VCOM = Open,orVNO = 1.65 V,VCOM = Open,
Switch ON,See Figure 18
25°C
1.95 V
–40 7 40
nAFull –40 40
COMON leakagecurrent
ICOM(ON)
VCOM = 0.3 V,VNO = Open,orVCOM = 1.65 V,VNO = Open,
Switch ON,See Figure 18
25°C
1.95 V
–70 –8.5 70
nAFull –70 70
Digital Control Input (IN)
Input logic high VIH Full VCC ×0.65
5.5 V
Input logic low VIL Full 0 VCC ×0.35 V
Input leakagecurrent IIH, IIL VIN = 5.5 V or 0
25°C1.95 V
–0.1 0.05 0.1µA
Full –1 1
12
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Electrical Characteristics For 1.8-V Supply(1) (continued)VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA VCC MIN TYP MAX UNITDynamic
Turn-on time tONVCOM = 1.3 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 1.8 V 9.3 10.4 11.5
nsFull
1.65 Vto
1.95 V6.8 12.9
Turn-off time tOFFVCOM = 1.3 V,RL = 300 Ω,
CL = 35 pF,See Figure 20
25°C 1.8 V 3.3 4.3 5.2
nsFull
1.65 Vto
1.95 V2.4 6.5
Charge injection QCVGEN = 0,RGEN = 0,
CL = 0.1 nF,See Figure 24 25°C 1.8 V 0.5 pC
NOOFFcapacitance
CNO(OFF) VNO = VCC or GND, Switch OFF,See Figure 19 25°C 1.8 V 6 pF
COMOFFcapacitance
CCOM(OFF)VCOM = VCC orGND,
Switch OFF,See Figure 19 25°C 1.8 V 6 pF
NOON capacitance CNO(ON) VNO = VCC or GND, Switch ON,
See Figure 19 25°C 1.8 V 14.5 pF
COMON capacitance CCOM(ON)
VCOM = VCC orGND,
Switch ON,See Figure 19 25°C 1.8 V 14.5 pF
Digital inputcapacitance CIN VIN = VCC or GND, See Figure 19 25°C 1.8 V 3 pF
Bandwidth BW RL = 50 Ω, Switch ON,See Figure 21 25°C 1.8 V 293 MHz
OFF isolation OISORL = 50 Ω,f = 10 MHz,
Switch OFF,See Figure 22 25°C 1.8 V –68 dB
Crosstalk XTALKRL = 50 Ω,f = 10 MHz,
Switch ON,See Figure 23 25°C 1.8 V –66 dB
Total harmonicdistortion THD RL = 10 kΩ,
CL = 50 pF,
f = 20 Hz to 20kHz,See Figure 25
25°C 1.8 V 2.7%
Supply
Positive supplycurrent ICC VIN = VCC or GND, Switch ON or OFF
25°C1.95 V
0.1 1µA
Full 5
0
2
4
6
8
10
12
14
16
VCOM (V)
r on
(Ω)
TA = −40°C
TA = 25°C
TA = 85°C
0 0.5 1 2 2.5 31.5
0
1
2
3
4
5
6
7
8
9
10
VCOM (V)
r on
(Ω)
TA = −40°C
TA = 25°C
TA = 85°C
0 0.5 1 2 2.5 31.5 3.5 4 4.5
0
2
4
6
8
10
12
14
VCOM (V)
r on
(Ω)
TA = 25°C
NO1 COM1
0 0.5 1 2 2.5 31.5
0
1
2
3
4
5
6
7
8
9
10
VCOM (V)
r on
(Ω)
TA = 25°C
NO1 COM1
0 0.5 1 2 2.5 31.5 3.5 4 4.5
Figure 1
0
10
20
30
40
50
60
70
80
90
VCOM (V)
r on
()
Ω
TA = 25°C
NO1 COM1
0 0.25 0.5 1 1.25 1.5 1.750.75
0
5
10
15
20
25
VCOM (V)
r on
(Ω)
TA = 25°C
NO1 COM1
0 0.3 0.6 1.2 1.5 1.8 2.10.9 2.4
13
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6.9 Typical Performance
VCC = 1.65 V
Figure 1. ron vs VCOM
VCC = 2.3 V
Figure 2. ron vs VCOM
VCC = 3 V
Figure 3. ron vs VCOM
VCC = 4.5 V
Figure 4. ron vs VCOM
Figure 5. ron vs VCOM (VCC = 3 V) Figure 6. ron vs VCOM (VCC = 4.5 V)
VCC (V)
Logic
Thre
shold
(V
)
VIL
VIH
TA = 25°C
0.5
1
1.5
2
2.5
3
3.5
01.6 2.1 2.6 3.1 3.6 4.1 4.6 5.1 5.6
–35
–30
–25
–20
–15
–10
–5
0
5
–10
–8
–6
–4
–2
−1
0
0.1 1 10 100 1000Frequency (MHz)
Gain
(dB
)
Phase (
°)
Phase
Gain
TA = 25°C
0
1
2
3
4
5
6
TA (C)
t ON
/tO
FF
(ns)
−40 C 25C 85C° ° °
tON
tOFF
0
2
4
6
8
10
12
1.65 2.15 2.65 3.15 3.65 4.15 4.65 5.15
Supply Voltage (V)
tON
t ON
/tO
FF
(ns)
tOFF
0
2
4
6
8
10
12
14
16
18
20
−40°C
Leakage (
nA
)
TA (C)
INO2(OFF)
INO2(ON)
ICOM2(ON), ICOM2(OFF)
INO1(ON)
ICOM1(ON), ICOM1(OFF)
INO1(OFF)
25°C 85°C
3.3 V
5 V
−1.0
−0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 1 2 3 4 5 6
VCOM
QC
14
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Typical Performance (continued)
Figure 7. Leakage Current vs Temperature Figure 8. Charge Injection (QC) vs VCOM
Figure 9. tON and tOFF vs VCCFigure 10. tON and tOFF vs Temperature (VCC = 5 V)
Figure 11. Logic Threshold vs VCC
Figure 12. Bandwidth (VCC = 5 V)
0
10
20
30
40
50
60
70
−40 C 25C 85C° ° °
I CC
TY
P (
nA
)
TA (C)
0
1
2
3
4
5
6
0.1 1 10 100 1000Frequency (MHz)
TH
D +
Nois
e (
%)
7
THD (3.3 V)
THD (5 V)
Frequency (MHz)
Ga
in (
dB
)
–120
–100
–60
–40
–20
0
0.1 1 10 100 1000
–80
OFF Isolation
Crosstalk
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Typical Performance (continued)
Figure 13. OFF Isolation and Crosstalk (VCC = 5 V) Figure 14. Total Harmonic Distortion vs Frequency
Figure 15. Power-Supply Current vs Temperature(VCC = 5 V)
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7 Parameter Measurement Information
Table 1. Parameter DescriptionSYMBOL DESCRIPTION
VCOM Voltage at COMVNO Voltage at NOron Resistance between COM and NO ports when the channel is ONΔron Difference of ron between channels in a specific device
ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditionsINO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output(COM) open
ICOM(OFF) Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
ICOM(ON)Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output(NO) open
VIH Minimum input voltage for logic high for the control input (IN)VIL Maximum input voltage for logic low for the control input (IN)VIN Voltage at the control input (IN)
IIH, IIL Leakage current measured at the control input (IN)
tONTurn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagationdelay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFFTurn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagationdelay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFFCNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(OFF) Capacitance at the COM port when the corresponding channel (COM to NO) is OFFCCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CIN Capacitance of IN
OISOOFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specificfrequency, with the corresponding channel (NO to COM) in the OFF state.
XTALKCrosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2).This is measured in a specific frequency and in dB.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higherharmonics to the magnitude of fundamental harmonic.
ICC Static power-supply current with the control (IN) pin at VCC or GND
Channel ON
ON-State Leakage Current
VIN = VIH or V IL
VCC
GND
NO
VIN
COMVCOM
VNO
IN
+
+
Channel OFF
OFF-State Leakage Current
VIN= VIH or V IL
VCC
GND
NO
VIN
COM VCOM
VNO
IN
+
+
+
VCC
ICOM
ron
VCOM
VNO
ICOM
GND
Channel ON
NO
VIN
COM VCOM
VIN = VIH or V IL
VNO
IN
+
+
=–
Ω
17
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Figure 16. ON-State Resistance (ron)
Figure 17. OFF-State Leakage Current (ICOM(OFF), INO(OFF))
Figure 18. ON-State Leakage Current (ICOM(ON), INO(ON))
VCC
GND
NO
INVIN
COM
50
50
VNO
VCOM
Channel ON: NO to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
DC Bias = 350 mV
Network Analyzer
Source
Signal
+
VIN = VCC or GND
Ω
ΩΩ
CL(2) RL
VCOM
VCC
GND
NO
IN
VNO
VIN
COM
Logic
Input (1)
300 Ω
RL CL
35 pFtON
TEST
300 Ω 35 pFtOFF
50%
tON tOFF
50%
90% 90%
Logic
Input
(VIN)
VCC
Switch
Output
(VNO)
0
(3)
VCC
GND
IN
VBIAS
VIN
VIN = VIH or V IL
VBIAS = VCC or GND
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
Capacitance
Meter
VCOM
VNO
COM
NO
18
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Figure 19. Capacitance (CIN, CCOM(OFF), CCOM(ON), CNO(OFF), CNO(ON))
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,tf < 5 ns.
(2) CL includes probe and jig capacitance.(3) See Electrical Characteristics tables for VCOM.
Figure 20. Turn-On (tON) and Turn-Off Time (tOFF)
Figure 21. Bandwidth (BW)
VCC
GND
NO
IN
RGEN
VIN
COM VCOM
CL(2)
OFF
VCOM
ON OFF
ΔVCOMVGEN
+
VIN= VIH or V IL
CL = 0.1 nF
VGEN = 0 to VCC
RGEN = 0
QC = CL × ΔVCOM
Logic
Input (1)
VIH
VIL
Logic
Input
(VIN)
NO1
NO2
50
50
VNO1
COM1Channel ON: NO to COM
Network Analyzer Setup
Source Power = 0 dBm
(632 mV P-P at 50 load)
DC Bias = 350 mV
50
VCC
GND
VNO2
Source
Signal
Network Analyzer
COM2
INVIN
+
Ω
Ω
Ω
-Ω
NO
COM
VNO
VCOM
Channel OFF: NO to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
DC Bias = 350 mV
50
VCC
GND
50
50
Network Analyzer
Source
Signal
INVIN
+
VIN = VCC or GNDΩ
Ω
Ω
Ω
19
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Figure 22. OFF Isolation (OISO)
Figure 23. Crosstalk (XTALK)
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 24. Charge Injection (QC)
VCC
GND
NO
COM
10 F
CL(1)
RL
VCC/2
10 F
INVIN
600600
600
Audio Analyzer
Source
Signal
RL = 600 Ω
CL = 50 pFVSOURCE = VCC P-P fSOURCE = 20 Hz to 20 kHz
Channel ON: COM to NC VIN = VIH or V IL
ΩΩ
Ω
µ
µ
20
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(1) CL includes probe and jig capacitance.
Figure 25. Total Harmonic Distortion (THD)
SPST
IN1
NO1 COM1
SPST
IN2
NO2 COM2
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8 Detailed Description
8.1 OverviewThe TS5A2066 device is a 2-channel single-pole single-throw (1:1 SPST) analog switch that is designed tooperate from 1.65 V to 5.5 V. This device can handle both digital and analog signals, and signals up to VCC canbe transmitted in either direction
8.2 Functional Block Diagram
8.3 Feature Description5-V tolerant control inputs allow 5-V logic levels to be present on the IN pin irrespective of the voltage on VCCpin.
Low ON-resistance and THD performance allows minimal signal distortion through device.
8.4 Device Functional ModesTable 2 shows the functional modes for TS5A23166.
Table 2. Function Table
IN NO TO COM,COM TO NO
L OFFH ON
SPST switch Device 1
System
Controller
COM1
COM2
NO1
Data
IN1
VCC
3.3V 3.3V
GND
IN2
Device 2NO2
3.3V
22
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9 Application and Implementation
NOTEInformation in the following applications sections is not part of the TI componentspecification, and TI does not warrant its accuracy or completeness. TI’s customers areresponsible for determining suitability of components for their purposes. Customers shouldvalidate and test their design implementation to confirm system functionality.
9.1 Application InformationThe TS5A2066 2-channel, 1:1 SPST analog switch is a basic component that could be used in any electricalsystem design that signal isolation.
9.2 Typical Application
Figure 26. Typical Application Circuit
9.2.1 Design RequirementsEnsure that all of the signals passing through the switch are within the specified ranges in the recommendedoperating conditions to ensure proper performance.
9.2.2 Detailed Design ProcedureThe TS5A2066 can be properly operated without any external components.
Unused signal path pins COM or NO maybe left floating or connected to ground through a 50-Ω resistor toprevent signal reflections back into the device.
TI recommends that the digital control pins (INX) be pulled up to VCC or down to GND to avoid undesired switchpositions that could result from the floating pin. Leaving the logic pins floating may increase ICC. Refer to the TIapplication report, Implications of Slow or Floating CMOS Inputs (SCBA004), for further details.
0
2
4
6
8
10
12
14
VCOM (V)
r on
(Ω)
TA = 25°C
NO1 COM1
0 0.5 1 2 2.5 31.5
0
1
2
3
4
5
6
7
8
9
10
VCOM (V)
r on
(Ω)
TA = 25°C
NO1 COM1
0 0.5 1 2 2.5 31.5 3.5 4 4.5
Figure 1
0
10
20
30
40
50
60
70
80
90
VCOM (V)
r on
()
Ω
TA = 25°C
NO1 COM1
0 0.25 0.5 1 1.25 1.5 1.750.75
0
5
10
15
20
25
VCOM (V)
r on
(Ω)
TA = 25°C
NO1 COM1
0 0.3 0.6 1.2 1.5 1.8 2.10.9 2.4
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Typical Application (continued)9.2.3 Application Curves
VCC = 1.65 V
Figure 27. ron vs VCOM
VCC = 2.3 V
Figure 28. ron vs VCOM
VCC = 3 V
Figure 29. ron vs VCOM
VCC = 4.5 V
Figure 30. ron vs VCOM
10 Power Supply RecommendationsProper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximumratings, because stresses beyond the listed ratings can cause permanent damage to the device. Alwayssequence VCC on first, followed by NO, NC, or COM. Although it is not required, power-supply bypassingimproves noise margin and prevents switching noise propagation from the VCC supply to other components. A0.1-μF capacitor, connected from VCC to GND, is adequate for most applications. Copyright
1
2
3
4
8
NO2GND
COM1
COM2
NO1 VCC
IN1
IN2
LEGEND
VIA to Power Plane
VIA to GND Plane (Inner Layer)
Polygonal Copper Pour
To System
To System
To System
7
6
5
Bypass Capacitor
Vcc
To System To System
To System
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11 Layout
11.1 Layout GuidelinesHigh-speed switches require proper layout and design procedures for optimum performance. Reduce strayinductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are as close to thedevice as possible. Use large ground planes where possible.
11.2 Layout Example
Figure 31. Layout Example
25
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation UpdatesTo receive notification of documentation updates, navigate to the device product folder on ti.com. In the upperright corner, click on Alert me to register and receive a weekly digest of any product information that haschanged. For change details, review the revision history included in any revised document.
12.2 Community ResourcesThe following links connect to TI community resources. Linked contents are provided "AS IS" by the respectivecontributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms ofUse.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaborationamong engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and helpsolve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools andcontact information for technical support.
12.3 TrademarksE2E is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge CautionThis integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be moresusceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 GlossarySLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.
PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead/Ball Finish(6)
MSL Peak Temp(3)
Op Temp (°C) Device Marking(4/5)
Samples
TS5A2066DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -40 to 85 JAGZ
TS5A2066DCTRE4 ACTIVE SM8 DCT 8 3000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -40 to 85 JAGZ
TS5A2066DCUR ACTIVE VSSOP DCU 8 3000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -40 to 85 JAGR
TS5A2066DCURE4 ACTIVE VSSOP DCU 8 3000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -40 to 85 JAGR
TS5A2066DCURG4 ACTIVE VSSOP DCU 8 3000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM -40 to 85 JAGR
TS5A2066YZPR ACTIVE DSBGA YZP 8 3000 Green (RoHS& no Sb/Br)
SNAGCU Level-1-260C-UNLIM -40 to 85 (J47 ~ J4N)
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.
PACKAGE OPTION ADDENDUM
www.ti.com 17-Aug-2015
Addendum-Page 2
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device PackageType
PackageDrawing
Pins SPQ ReelDiameter
(mm)
ReelWidth
W1 (mm)
A0(mm)
B0(mm)
K0(mm)
P1(mm)
W(mm)
Pin1Quadrant
TS5A2066DCTR SM8 DCT 8 3000 180.0 13.0 3.35 4.5 1.55 4.0 12.0 Q3
TS5A2066DCUR VSSOP DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
TS5A2066DCURG4 VSSOP DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
TS5A2066YZPR DSBGA YZP 8 3000 178.0 9.2 1.02 2.02 0.63 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Aug-2017
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS5A2066DCTR SM8 DCT 8 3000 182.0 182.0 20.0
TS5A2066DCUR VSSOP DCU 8 3000 202.0 201.0 28.0
TS5A2066DCURG4 VSSOP DCU 8 3000 202.0 201.0 28.0
TS5A2066YZPR DSBGA YZP 8 3000 220.0 220.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Aug-2017
Pack Materials-Page 2
MECHANICAL DATA
MPDS049B – MAY 1999 – REVISED OCTOBER 2002
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
0,600,20
0,25
0° – 8°
0,15 NOM
Gage Plane
4188781/C 09/02
4,25
5
0,300,15
2,903,752,70
8
4
3,152,75
1
0,100,00
1,30 MAX
Seating Plane
0,10
M0,130,65
PIN 1INDEX AREA
NOTES: A. All linear dimensions are in millimeters.B. This drawing is subject to change without notice.C. Body dimensions do not include mold flash or protrusionD. Falls within JEDEC MO-187 variation DA.
www.ti.com
PACKAGE OUTLINE
C0.5 MAX
0.190.15
1.5TYP
0.5 TYP
8X 0.250.21
0.5TYP
B E A
D
4223082/A 07/2016
DSBGA - 0.5 mm max heightYZP0008DIE SIZE BALL GRID ARRAY
NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.2. This drawing is subject to change without notice.
BALL A1CORNER
SEATING PLANE
BALL TYP0.05 C
B
1 2
0.015 C A B
SYMM
SYMM
C
A
D
SCALE 8.000
D: Max =
E: Max =
1.918 mm, Min =
0.918 mm, Min =
1.858 mm
0.858 mm
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EXAMPLE BOARD LAYOUT
8X ( 0.23)(0.5) TYP
(0.5) TYP
( 0.23)METAL
0.05 MAX ( 0.23)SOLDER MASKOPENING
0.05 MIN
4223082/A 07/2016
DSBGA - 0.5 mm max heightYZP0008DIE SIZE BALL GRID ARRAY
NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
SYMM
SYMM
LAND PATTERN EXAMPLESCALE:40X
1 2
A
B
C
D
NON-SOLDER MASKDEFINED
(PREFERRED)
SOLDER MASK DETAILSNOT TO SCALE
SOLDER MASKOPENING
SOLDER MASKDEFINED
METAL UNDERSOLDER MASK
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EXAMPLE STENCIL DESIGN
(0.5)TYP
(0.5) TYP
8X ( 0.25) (R0.05) TYP
METALTYP
4223082/A 07/2016
DSBGA - 0.5 mm max heightYZP0008DIE SIZE BALL GRID ARRAY
NOTES: (continued) 4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
SYMM
SYMM
SOLDER PASTE EXAMPLEBASED ON 0.1 mm THICK STENCIL
SCALE:40X
1 2
A
B
C
D
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