2002-07-31Page 1

SPD30P06PSPU30P06PFinal data

SIPMOS Power-TransistorProduct SummaryVDS -60 VRDS(on) 0.075 Ω

ID -30 A

Feature• P-Channel• Enhancement mode• 175°C operating temperature• Avalanche rated• dv/dt rated

P-TO251 P-TO252

Gatepin1

Drainpin 2

Sourcepin 3

Type Package Ordering CodeSPD30P06P P-TO252 Q67042-S4018

SPU30P06P P-TO251 Q67042-S4019

Maximum Ratings, at Tj = 25 °C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain currentTC=25°C

TC=100°C

ID -30

-21.5

A

Pulsed drain currentTC=25°C

ID puls -120

Avalanche energy, single pulseID=-30 A , VDD=-25V, RGS=25Ω

EAS 250 mJ

Avalanche energy, periodic limited by Tjmax EAR 12.5

Reverse diode dv/dtIS=-30A, VDS=-48V, di/dt=-200A/µs, Tjmax=175°C

dv/dt -6 kV/µs

Gate source voltage VGS ±20 V

Power dissipationTC=25°C

Ptot 125 W

Operating and storage temperature Tj , Tstg -55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

2002-07-31Page 2

SPD30P06PSPU30P06PFinal data

Thermal CharacteristicsParameter Symbol Values Unit

min. typ. max.CharacteristicsThermal resistance, junction - case RthJC - - 1.2 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 100

SMD version, device on PCB: @ min. footprint

@ 6 cm2 cooling area 1)

RthJA --

--

7550

Electrical Characteristics, at Tj = 25 °C, unless otherwise specifiedParameter Symbol Values Unit

min. typ. max.Static CharacteristicsDrain-source breakdown voltageVGS=0, ID=-250µA

V(BR)DSS -60 - - V

Gate threshold voltage, VGS = VDSID=-1.7mA

VGS(th) -2.1 -3 -4

Zero gate voltage drain currentVDS=-60V, VGS=0, Tj=25°C

VDS=-60V, VGS=0, Tj=150°C

IDSS --

-0.1-10

-1

-100

µA

Gate-source leakage currentVGS=-20V, VDS=0

IGSS - -10 -100 nA

Drain-source on-state resistanceVGS=-10V, ID=-21.5A

RDS(on) - 0.066 0.075 Ω

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2002-07-31Page 3

SPD30P06PSPU30P06PFinal data

Electrical Characteristics, at Tj = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unit

min. typ. max.Dynamic CharacteristicsTransconductance gfs |VDS|≥2*|ID|*RDS(on)max ,

ID=-21.5A

5.2 10.4 - S

Input capacitance Ciss VGS=0, VDS=-25V,

f=1MHz

- 1228 1535 pF

Output capacitance Coss - 387 484

Reverse transfer capacitance Crss - 142 177

Turn-on delay time td(on) VDD=-30V, VGS=-10V,

ID=-21.5A, RG=3.3Ω

- 8.7 13 ns

Rise time tr - 25.2 37.8

Turn-off delay time td(off) - 27.4 41.1

Fall time tf - 14.6 21.9

Gate Charge CharacteristicsGate to source charge Qgs VDD=-48V, ID=-30A - -3.7 -5.6 nC

Gate to drain charge Qgd - -13.8 -20.7

Gate charge total Qg VDD=-48V, ID=-30A,

VGS=0 to -10V

- -32 -48

Gate plateau voltage V(plateau) VDD=-48V, ID=-30A - -5.2 - V

Reverse DiodeInverse diode continuous forward current

IS TC=25°C - - -30 A

Inv. diode direct current, pulsed ISM - - -120

Inverse diode forward voltage VSD VGS=0, |IF| = |IS| - -1.3 -1.7 V

Reverse recovery time trr VR=-30V, |IF| = |IS|,

diF/dt=100A/µs

- 64.6 97 ns

Reverse recovery charge Qrr - 153 230 nC

2002-07-31Page 4

SPD30P06PSPU30P06PFinal data

1 Power dissipationPtot = f (TC)

0 20 40 60 80 100 120 140 160 °C 190

TC

0

10

20

30

40

50

60

70

80

90

100

110

120

W140

SPD30P06P

P tot

2 Drain currentID = f (TC)parameter: |VGS |≥ 10 V

0 20 40 60 80 100 120 140 160 °C 190

TC

0

-4

-8

-12

-16

-20

-24

A

-32 SPD30P06P

I D

3 Safe operating areaID = f ( VDS )parameter : D = 0 , TC = 25 °C

-10 -1 -10 0 -10 1 -10 2 VVDS

0 -10

1 -10

2 -10

3 -10

A

SPD30P06P

I D

R DS(on)

= V DS

/ I D

DC

10 ms

1 ms

100 µs

tp = 31.0µs

4 Max. transient thermal impedanceZthJC = f (tp)parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 stp

-5 10

-4 10

-3 10

-2 10

-1 10

0 10

1 10 K/W

SPD30P06P

Z thJ

C

single pulse0.01

0.02

0.05

0.10

0.20

D = 0.50

2002-07-31Page 5

SPD30P06PSPU30P06PFinal data

5 Typ. output characteristicID = f (VDS)parameter: Tj =25°C

0 5 10 15 20 25 30 35 V 45

-VDS

0

10

20

30

40

50

60

70

A

90

-I D

-9V

-5V

-6V

-7V

-10V

-4.5V-4V

6 Typ. drain-source on resistanceRDS(on) = f (ID)parameter: VGS; Tj = 25 °C

0 10 20 30 40 50 60 70 A 90

-ID

0

0.1

0.2

0.3

0.4

0.5

Ω

0.7

RD

S(on

)

-4V-4.5V-5V-6V-7V-9V-10V

7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)maxparameter: Tj = 25 °C

0 1 2 3 4 5 6 7 8 V 10

-VGS

0

10

20

30

40

50

60

70

A

90

-I D

8 Typ. forward transconductancegfs = f(ID)parameter: Tj = 25 °C

0 10 20 30 40 50 60 70 A 90

-ID

0

2

4

6

8

10

12

14

S

18

g fs

2002-07-31Page 6

SPD30P06PSPU30P06PFinal data

9 Drain-source on-state resistanceRDS(on) = f (Tj) parameter : ID = -21.5 A, VGS = -10 V

-60 -20 20 60 100 140 °C 200

Tj

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

Ω0.24

SPD30P06P

RD

S(on

)

typ

98%

10 Typ. gate threshold voltageVGS(th) = f (Tj)parameter: VGS = VDS

-60 -20 20 60 100 °C 160

Tj

0

0.5

1

1.5

2

2.5

3

3.5

4

V

5

-VG

S(th

)

98%

2%

typ.

11 Typ. capacitancesC = f (VDS)parameter: VGS=0, f=1 MHz; Tj = 25 °C

0 2 4 6 8 10 12 14 16 V 20

-VDS

1 10

2 10

3 10

4 10

pF

C

Coss

Ciss

Crss

12 Forward character. of reverse diodeIF = f (VSD)parameter: Tj , tp = 80 µs

0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3

VSD

0 -10

1 -10

2 -10

3 -10

A

SPD30P06P

I F

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 175 °C typ

Tj = 175 °C (98%)

2002-07-31Page 7

SPD30P06PSPU30P06PFinal data

13 Typ. avalanche energy EAS = f (Tj)par.: ID = -30 A , VDD = -25 V, RGS = 25 Ω

25 45 65 85 105 125 145 °C 185

Tj

0

20

40

60

80

100

120

140

160

180

200

220

mJ260

EAS

14 Typ. gate chargeVGS = f (QG), parameter: VDS ; Tj = 25 °C ID = -30 A pulsed;

0 10 20 30 40 nC 55

|QG|

0

-2

-4

-6

-8

-10

-12

V

-16 SPD30P06P

V GS

0.2 VDS max

0.8 VDS max

15 Drain-source breakdown voltageV(BR)DSS = f (Tj)

-60 -20 20 60 100 140 °C 200

Tj

-54

-56

-58

-60

-62

-64

-66

-68

V

-72 SPD30P06P

V(B

R)D

SS

2002-07-31Page 8

SPD30P06PSPU30P06PFinal data

Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved. Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. InformationFor further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.